My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SM15T10A-E3/9AT
- Part No.:
- SM15T10A-E3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SM15T10A-E3/9AT.pdf
- Description:
- TVS DIODE 8.55VWM 14.5VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,473
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM15T10A-E3/9AT from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) in SMC (DO-214AB) package, with 10 V standoff voltage (VWM), 14.5 V clamping voltage (VC) at 103 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) capability under 10/1000 μs waveform. It protects MOSFETs, ICs, and sensor signal lines against lightning-induced and inductive-switching transients in automotive and industrial power electronics.
For engineers reviewing the SM15T10A-E3/9AT datasheet, SM15T10A-E3/9AT pinout, SM15T10A-E3/9AT application, or SM15T10A-E3/9AT equivalent, key selection criteria include verified clamping performance at rated IPPM, unidirectional polarity with cathode band marking, RoHS-compliant matte tin plating, and compatibility with automated SMT placement on standard 8.0 mm × 8.0 mm copper pads.
Technical Context
The SM15T10A-E3/9AT employs a glass-passivated silicon junction optimized for low-inductance transient suppression. Its breakdown voltage (VBR) is 9.5–10.5 V at 1.0 mA test current, ensuring precise triggering above system operating voltage while maintaining <10 μA reverse leakage at 8.55 V standoff.
Thermal design relies on RθJL = 15 °C/W junction-to-lead resistance and derating curves supporting operation up to +150 °C junction temperature. Failure mode under overstress is short-circuit, consistent with IEC 61000-4-5 surge immunity requirements for industrial and automotive end equipment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 8.55 V - Maximum continuous reverse voltage before significant leakage; sets upper limit for protected circuit DC bias. |
| VBR (Breakdown Voltage) | 9.5–10.5 V at 1.0 mA - Confirmed avalanche initiation range; ensures reliable turn-on margin above VWM. |
| VC (Clamping Voltage) | 14.5 V at IPPM = 103 A (10/1000 μs) - Peak voltage seen by downstream components during worst-case surge. |
| PPPM (Peak Pulse Power) | 1500 W - Sustained energy absorption capability for lightning and switching transients per IEC 61000-4-5. |
| ID (Reverse Leakage) | 10 μA max at VWM - Low standby current preserves battery life and avoids false triggering in low-power sensor interfaces. |
| TJ max | +150 °C - Enables use in under-hood automotive environments and high-temperature industrial enclosures. |
| Package | SMC (DO-214AB) - Standardized surface-mount outline with 7.75 mm × 6.22 mm footprint and 2.62 mm height for thermal and mechanical reliability. |
Pinout & Package
SMC (DO-214AB) package with two terminals: anode and cathode. Cathode identified by molded band on body. Designed for solder attachment to 0.31″ × 0.31″ (8.0 mm × 8.0 mm) copper pads per terminal per JEDEC standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when voltage exceeds VBR. |
| Anode | Reference/return path | Typically tied to system ground; completes low-inductance current loop during clamping event. |
Key Features
| Feature | Design Value |
|---|---|
| 1500 W peak pulse power (10/1000 μs) | Validated energy handling for Level 4 IEC 61000-4-5 surges without degradation. |
| Glass passivated chip junction | Ensures stable VBR over lifetime and resistance to humidity-induced parameter drift. |
| Low inductance layout | Minimizes voltage overshoot during fast-rising transients (e.g., ESD or inductive kick). |
| MSL Level 1 (260 °C peak reflow) | Supports single-pass lead-free reflow without popcorn cracking or delamination. |
| RoHS-compliant, matte tin-plated leads | Meets J-STD-002 and JESD 22-B102 solderability standards for high-yield SMT assembly. |
Applications
| Automotive Power Distribution | Industrial Motor Drive I/O Protection |
|---|---|
Use Scenario: Protecting 12 V supply rails and LIN bus lines in engine control modules against load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp positive transients. Use Value: Clamps to 14.5 V at 103 A, staying below 16 V absolute maximum rating of most automotive MCUs and transceivers. |
Use Scenario: Shielding PLC analog input channels from inductive kickback when solenoids or contactors de-energize. IC Role / Device Role / Timing Role: Standoff protection device on signal line input, referenced to local ground plane. Use Value: Sub-15 V clamping prevents damage to 12-bit ADC front-ends and maintains measurement integrity during 1 kV/μs transients. |
| Consumer Power Adapter Output | Telecom DC Power Feeds |
Use Scenario: Safeguarding USB-C PD port output stages from reverse-connected adapters or hot-swap surges. IC Role / Device Role / Timing Role: Secondary-side transient suppressor on +5 V to +20 V output rails. Use Value: 8.55 V VWM allows clean regulation up to 9 V, while 14.5 V VC ensures safe margin for 12 V nominal systems. |
Use Scenario: Guarding -48 V telecom power feeds against lightning-induced common-mode surges entering via Ethernet or coaxial lines. IC Role / Device Role / Timing Role: Unidirectional clamp from feed line to return, leveraging negative rail topology. Use Value: 1500 W rating sustains multiple 10/1000 μs surges per GR-1089-CORE requirement without parametric shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ10A | Lower PPPM (400 W), same VWM (8.55 V), higher VC (17.0 V at 24.7 A) | Limited to lower-energy threats (e.g., ESD, minor switching noise); not suitable for lightning-level surges. | Select SMAJ10A only if system threat level is classified ≤ Level 2 per IEC 61000-4-5 and board space is constrained. |
| SMCJ10A | Same package, identical VWM/VBR/VC specs, but rated for 3000 W PPPM (10/1000 μs) | Overqualified for 1500 W requirements; higher cost and larger thermal mass may delay response in ultra-fast events. | Choose SMCJ10A only when future-proofing against higher surge standards or when dual-stage protection architecture requires headroom. |
Compared with SMAJ10A and SMCJ10A, the SM15T10A-E3/9AT delivers optimal balance of 1500 W surge capacity, tight 14.5 V clamping, and SMC footprint-making it the preferred choice for cost-sensitive automotive and industrial designs requiring certified Level 3/4 immunity without overengineering.
Availability
SM15T10A-E3/9AT is available at Aetrix Electronics and suitable for automotive power distribution, industrial motor drive I/O protection, and telecom DC power feeds requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SM15T10A-E3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, power efficiency, and AEC-Q101 qualification.
The SM15T Series was engineered specifically for high-energy transient suppression in harsh environments-targeting automotive, industrial, and telecom infrastructure where 1500 W surge immunity and thermal robustness are mandatory.
FAQ
What is the clamping voltage of the SM15T10A-E3/9AT under standard test conditions?
The SM15T10A-E3/9AT has a maximum clamping voltage (VC) of 14.5 V when subjected to a 10/1000 μs waveform at its rated peak pulse current of 103 A. This value is measured across the device terminals with specified mounting conditions (0.31″ × 0.31″ copper pads), and defines the highest voltage downstream components will experience during a surge event. The SM15T10A-E3/9AT maintains this clamping performance consistently across its operational temperature range.
Is the SM15T10A-E3/9AT suitable for automotive applications?
Yes, the SM15T10A-E3/9AT is RoHS-compliant and qualified to AEC-Q101 when ordered with HE3 or HM3 suffixes; however, the -E3/9AT variant is commercial-grade and not AEC-Q101 certified. For non-safety-critical automotive subsystems (e.g., infotainment power rails or body control modules), the SM15T10A-E3/9AT remains widely deployed due to its proven thermal stability and 1500 W surge rating. Always verify qualification status using the full ordering code-SM15T10AHE3_A/I is the AEC-Q101 version.
How does the SM15T10A-E3/9AT differ from bidirectional TVS diodes like SM15T10CA?
The SM15T10A-E3/9AT is unidirectional and features a cathode band for polarity identification, enabling protection only against positive transients relative to ground. In contrast, SM15T10CA is bidirectional with no polarity marking and suppresses surges of either polarity-ideal for AC lines or differential data buses. The SM15T10A-E3/9AT offers tighter leakage control (<10 μA at VWM) and slightly lower clamping voltage than its bidirectional counterpart at equivalent current levels.
What is the thermal resistance specification for the SM15T10A-E3/9AT?
The SM15T10A-E3/9AT has a typical junction-to-lead thermal resistance (RθJL) of 15 °C/W and a junction-to-ambient thermal resistance (RθJA) of 75 °C/W under standard PCB mounting conditions (0.31″ × 0.31″ copper pads). These values enable reliable operation up to +150 °C junction temperature and inform heatsinking decisions when used in high-duty-cycle surge environments. Derating curves in the Vishay datasheet document allowable power reduction above 25 °C ambient.
Can the SM15T10A-E3/9AT be used in place of SMAJ10A in an existing design?
Direct substitution of SM15T10A-E3/9AT for SMAJ10A is mechanically feasible (both use DO-214AC/SMA vs. DO-214AB/SMC), but electrically not recommended without validation: SMAJ10A uses SMA package (smaller footprint, higher RθJA), has lower PPPM (400 W), and clamps at 17.0 V-18% higher than the SM15T10A-E3/9AT's 14.5 V. Replacing SMAJ10A with SM15T10A-E3/9AT may improve surge robustness but requires PCB pad revision and thermal reassessment due to differing package dimensions and thermal paths.
SM15T10A-E3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- SM15T, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.55V
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.5V
- Current - Peak Pulse (10/1000µs):
- 103A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SM15T10A-E3/9AT FAQ
1.How can I place an order for SM15T10A-E3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SM15T10A-E3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM15T10A-E3/9AT reliable?
The price and inventory of SM15T10A-E3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM15T10A-E3/9AT is usually 5 days.
3.What payment methods are accepted for SM15T10A-E3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM15T10A-E3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM15T10A-E3/9AT?
SM15T10A-E3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM15T10A-E3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM15T10A-E3/9AT?
For technical support, including SM15T10A-E3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM15T10A-E3/9AT requirements.
6.How does Aetrix verify that SM15T10A-E3/9AT is sourced from the original manufacturer or authorized distributors?
All SM15T10A-E3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM15T10A-E3/9AT meets industry standards.
7.What is the process for return or replacement of SM15T10A-E3/9AT?
All SM15T10A-E3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SM15T10A-E3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM15T10A-E3/9AT part is unused and in its original packaging.
Return procedure for SM15T10A-E3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM15T10A-E3/9AT Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
