Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM15T12AHE3/9AT

Part No.:
SM15T12AHE3/9AT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixSM15T12AHE3/9AT.pdf
Description:
TVS DIODE 10.2VWM 16.7VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,487

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM15T12AHE3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, rated for 1500 W peak pulse power (10/1000 μs), 12 V standoff voltage (VWM = 10.2 V), and clamping voltage of 16.7 V at 90 A peak pulse current. It provides robust protection for automotive-grade sensor signal lines and MOSFET gate drivers against inductive switching transients.

For engineers reviewing the SM15T12AHE3/9AT datasheet, SM15T12AHE3/9AT pinout, SM15T12AHE3/9AT application, or SM15T12AHE3/9AT equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low-inductance SMC package, and verified clamping performance under 10/1000 μs surge conditions.

Technical Context

The SM15T12AHE3/9AT employs a glass-passivated silicon junction optimized for fast response to transient overvoltages, with breakdown voltage VBR = 11.4–12.6 V at 1.0 mA test current and maximum reverse leakage ID = 5.0 μA at VWM. Its thermal resistance RθJA is 75 °C/W, and it sustains 200 A non-repetitive forward surge current (10 ms half-sine).

This device operates within -65 °C to +150 °C junction temperature range and is qualified per AEC-Q101 for automotive applications. Its failure mode under overstress is short-circuit, and it meets J-STD-020 MSL Level 1 with 260 °C reflow peak.

Key Specifications

Parameter Value and Actual Design Meaning
VWM10.2 V - Maximum continuous reverse operating voltage before clamping begins
VBR (min/max)11.4 V / 12.6 V at 1.0 mA - Ensures reliable breakdown initiation across process variation
VC @ IPPM16.7 V at 90.0 A (10/1000 μs) - Limits protected circuit voltage during worst-case surge
PPPM1500 W - Withstands lightning-induced or motor-switching transients without degradation
TJ max+150 °C - Enables use in under-hood automotive environments with high ambient thermal stress
RθJA75 °C/W - Defines thermal derating on standard 8 mm × 8 mm copper pads per terminal
AEC-Q101Qualified - Validated for automotive reliability including temperature cycling, HTRB, and ESD

Pinout & Package

Package: SMC (DO-214AB), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking.

Pin/Terminal Circuit Role Design Meaning
AnodeForward conduction path (unidirectional)Connected to system ground or lower-potential rail during clamping
CathodeReverse-biased terminal (marked with band)Connected to protected line; conducts when transient exceeds VWM

Key Features

Feature Design Value
1500 W peak pulse power (10/1000 μs)Protects against IEC 61000-4-5 Level 4 surges without derating on standard PCB layout
Glass passivated chip junctionEnsures stable VBR and low leakage over lifetime, even in humid or contaminated environments
Low inductance designMinimizes voltage overshoot during fast-rising transients (<1 ns rise time)
MSL Level 1, 260 °C peak reflowSupports single-pass lead-free assembly without popcorn or delamination risk
AEC-Q101 qualification (HE3 suffix)Validates suitability for automotive powertrain, body control, and ADAS sensor interfaces

Applications

Automotive Sensor Protection Industrial Motor Drive I/O

Use Scenario: Protecting LIN bus transceivers and Hall-effect position sensors in engine control modules from load-dump and inductive kickback.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor signal line and chassis ground to clamp transients below IC absolute maximum ratings.

Use Value: Prevents latch-up or permanent damage to 12 V-rated analog front-end ICs during 100 V/500 ms load dump events.

Use Scenario: Shielding PLC digital input terminals from back-EMF generated by solenoid valves and contactors.

IC Role / Device Role / Timing Role: Standoff-clamp TVS connected across input optocoupler inputs to limit voltage to ≤16.7 V during 1 kV/2 Ω surge.

Use Value: Maintains functional safety integrity by ensuring optocoupler CMTI remains above 25 kV/μs under surge stress.

Automotive Power Supply Rail Consumer Appliance Control Board

Use Scenario: Safeguarding 12 V DC-DC converter enable pins and feedback resistors in ADAS camera modules.

IC Role / Device Role / Timing Role: Fast-response TVS placed directly at IC pin to suppress sub-100 ns transients induced by nearby high-current switching.

Use Value: Eliminates false triggering of undervoltage lockout (UVLO) circuits during ignition transients.

Use Scenario: Protecting microcontroller GPIOs driving relays in smart washing machine main control boards.

IC Role / Device Role / Timing Role: Unidirectional clamping device shunting relay coil flyback energy away from MCU I/O pins.

Use Value: Extends MCU field lifetime by preventing cumulative gate oxide damage from repeated 200 V/10 A inductive spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ12A-E3/57T600 W PPPM, same VWM (10.2 V), higher VC = 19.9 V at 30.1 ALimited to lower-energy threats (IEC 61000-4-4 Level 3); not AEC-Q101 qualifiedSelect when cost sensitivity outweighs automotive qualification and surge margin requirements.
SMCJ12AHE3/9AT1500 W PPPM, identical VWM/VC, same AEC-Q101 qualification, but larger SMC package footprintSame protection level; requires PCB layout revision due to 7.11 mm × 8.13 mm vs. 6.60 mm × 7.75 mm outlineChoose only if existing design uses SMCJ footprint or needs marginally better thermal dissipation (RθJA = 65 °C/W).

Compared with SMAJ12A-E3/57T and SMCJ12AHE3/9AT, the SM15T12AHE3/9AT delivers identical automotive-grade surge immunity in a smaller SMC outline, enabling higher board density without sacrificing clamping accuracy or thermal robustness.

Availability

SM15T12AHE3/9AT is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial motor drive I/O protection, and consumer appliance control boards requiring stable component supply and long-term lifecycle support.

Supply support for SM15T12AHE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with emphasis on reliability, precision, and application-specific performance.

The SM15T Series was developed specifically for high-energy transient suppression in automotive and industrial systems where AEC-Q101 compliance, low clamping voltage, and 1500 W surge handling are mandatory.

FAQ

What is the clamping voltage of SM15T12AHE3/9AT at its rated peak pulse current?

The SM15T12AHE3/9AT has a maximum clamping voltage VC of 16.7 V when subjected to a 10/1000 μs waveform at IPPM = 90.0 A. This value is measured under standardized test conditions with 0.31" × 0.31" copper pads per terminal and defines the upper voltage limit imposed on protected circuitry during surge events. The SM15T12AHE3/9AT maintains this clamping performance across its qualified temperature range.

Is SM15T12AHE3/9AT suitable for bidirectional transient protection?

No, SM15T12AHE3/9AT is a unidirectional TVS diode, as indicated by the "A" suffix and cathode band marking. For bidirectional operation, Vishay specifies the CA suffix (e.g., SM15T12CA). Using SM15T12AHE3/9AT in bidirectional applications would result in forward conduction during negative transients, potentially damaging downstream circuitry. Always verify polarity alignment before integrating SM15T12AHE3/9AT into the design.

Does SM15T12AHE3/9AT require heatsinking for 6.5 W continuous power dissipation?

No, the 6.5 W power dissipation rating (PD) for SM15T12AHE3/9AT applies only under infinite heatsink conditions at TA = 50 °C - a theoretical reference condition. In practice, the device relies on PCB copper area for thermal management. With the recommended 8.0 mm × 8.0 mm pad per terminal, SM15T12AHE3/9AT achieves RθJA = 75 °C/W, limiting steady-state power handling to ~0.087 W at 25 °C ambient. SM15T12AHE3/9AT is intended for transient, not continuous, power dissipation.

What does the "HE3" suffix indicate in SM15T12AHE3/9AT?

"HE3" denotes RoHS-compliant construction and AEC-Q101 qualification, distinguishing SM15T12AHE3/9AT from commercial-grade variants (e.g., "E3"). This suffix confirms that the SM15T12AHE3/9AT has passed automotive reliability tests including temperature cycling, high-temperature reverse bias, and unbiased highly accelerated stress testing. The "9AT" denotes 13-inch tape-and-reel packaging with 3500 units per reel.

How does SM15T12AHE3/9AT compare to older SMAJ-series TVS diodes in surge handling?

SM15T12AHE3/9AT delivers 1500 W peak pulse power (10/1000 μs), double the 600 W rating of SMAJ12A-E3/57T. Its lower clamping voltage (16.7 V vs. 19.9 V at rated IPPM) and tighter VBR tolerance (±5% vs. ±10%) provide superior protection margin for modern 12 V automotive electronics. Unlike SMAJ devices, SM15T12AHE3/9AT is AEC-Q101 qualified and rated for 150 °C operation, making it suitable for under-hood deployment where SM15T12AHE3/9AT outperforms legacy alternatives.

SM15T12AHE3/9AT Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
SM15T, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
10.2V
Voltage - Breakdown (Min):
11.4V
Voltage - Clamping (Max) @ Ipp:
16.7V
Current - Peak Pulse (10/1000µs):
90A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

SM15T12AHE3/9AT FAQ

1.How can I place an order for SM15T12AHE3/9AT through Aetrix?

Please submit a Request for Quotation (RFQ) for SM15T12AHE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM15T12AHE3/9AT reliable?

The price and inventory of SM15T12AHE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM15T12AHE3/9AT is usually 5 days.

3.What payment methods are accepted for SM15T12AHE3/9AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM15T12AHE3/9AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM15T12AHE3/9AT?

SM15T12AHE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM15T12AHE3/9AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM15T12AHE3/9AT?

For technical support, including SM15T12AHE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM15T12AHE3/9AT requirements.

6.How does Aetrix verify that SM15T12AHE3/9AT is sourced from the original manufacturer or authorized distributors?

All SM15T12AHE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM15T12AHE3/9AT meets industry standards.

7.What is the process for return or replacement of SM15T12AHE3/9AT?

All SM15T12AHE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SM15T12AHE3/9AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM15T12AHE3/9AT part is unused and in its original packaging.

Return procedure for SM15T12AHE3/9AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM15T12AHE3/9AT Tags

  • SM15T12AHE3/9AT
  • SM15T12AHE3/9AT PDF
  • SM15T12AHE3/9AT Datasheet
  • SM15T12AHE3/9AT Specifications
  • SM15T12AHE3/9AT Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM15T12AHE3/9AT
  • Buy SM15T12AHE3/9AT
  • SM15T12AHE3/9AT Price
  • SM15T12AHE3/9AT Distributor
  • SM15T12AHE3/9AT Supplier
  • SM15T12AHE3/9AT Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER