Vishay General Semiconductor - Diodes Division SM5S10HE3/2D
- Part No.:
- SM5S10HE3/2D
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM5S10HE3/2D.pdf
- Description:
- TVS DIODE 10VWM 18.8VC DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,705
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Product details
Overview
SM5S10HE3/2D from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor diode designed for automotive load dump protection in 12 V systems. It features a 10 V stand-off voltage (VWM), 11.1–13.6 V breakdown range (VBR), 3600 W peak pulse power (10/1000 μs), 175 °C junction temperature rating, and DO-218AB package with anode-connected metal heatsink.
For engineers reviewing the SM5S10HE3/2D datasheet, SM5S10HE3/2D pinout, SM5S10HE3/2D application, or SM5S10HE3/2D equivalent, key selection criteria include unidirectional clamping behavior, ISO7637-2 compliance for load dump transients, AEC-Q101 qualification, low leakage (<15 μA at VWM), and thermal resistance of 1.0 °C/W (junction-to-case).
Technical Context
The SM5S10HE3/2D operates as a unidirectional TVS diode with anode-connected heatsink - enabling direct mounting to PCB copper pour for enhanced thermal dissipation. Its junction passivation and anisotropic rectifier technology deliver stable clamping under repeated surge stress at TJ up to 175 °C.
It is rated for 500 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine) and clamps to ≤18.8 V at 191 A (10/1000 μs waveform). The device meets MSL Level 1 per J-STD-020 and passes JESD201 Class 2 whisker testing due to matte tin-plated leads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10 V - maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 11.1 V / 13.6 V at 5 mA - ensures reliable turn-on within defined tolerance band for predictable protection threshold |
| VC @ IPPM | 18.8 V at 191 A (10/1000 μs) - clamping voltage seen by protected circuit during worst-case surge |
| PPPM | 3600 W (10/1000 μs) - peak transient energy handling capability for automotive load dump events |
| TJ max | 175 °C - enables operation in under-hood environments without derating in high-temperature automotive applications |
| RθJC | 1.0 °C/W - allows effective heat transfer from junction to heatsink-mounted case for sustained reliability |
| Polarity | Unidirectional - blocks reverse voltage only; conducts forward surge current through anode-to-cathode path |
Pinout & Package
Package: DO-218AB - surface-mount, anode-connected metal heatsink case with UL 94 V-0 molding compound; leads are matte tin plated, solderable per J-STD-002 and JESD22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Cathode | Connected to protected circuit's positive rail; carries clamped surge current away from sensitive ICs |
| Lead 2 / Metal Heatsink | Anode | Must be soldered to large copper area for thermal management; serves as primary current return path and thermal interface |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock |
| ISO7637-2 compliant | Meets load dump test requirements for 12 V vehicle electrical systems (pulse 5a) |
| Junction passivated design | Reduces parameter drift over time and improves long-term stability under thermal stress |
| Low leakage current | <15 μA at 10 V (25 °C); <250 μA at 10 V (175 °C) - minimizes standby power loss in always-on modules |
| MSL Level 1 | Reflow-compatible up to 245 °C peak without preconditioning - supports standard SMT assembly processes |
Applications
| Automotive Body Control Module (BCM) | Engine Control Unit (ECU) Power Input Protection |
|---|---|
Use Scenario: Protects microcontroller power rails from load dump transients generated by alternator field coil de-energization during ignition-off events. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between battery feed and DC/DC input stage. Use Value: Limits voltage to ≤18.8 V during 3600 W surges, preventing latch-up or damage to downstream regulators and MCUs. |
Use Scenario: Shields ECU main 12 V input against ISO7637-2 Pulse 5a (load dump) and Pulse 1 (inductive switching) transients. IC Role / Device Role / Timing Role: Primary front-end transient suppressor mounted directly at connector entry point. Use Value: Withstands 500 A surge (8.3 ms) and maintains <15 μA leakage at 10 V, ensuring low quiescent current in sleep mode. |
| ADAS Camera Power Supply | Electric Power Steering (EPS) Motor Driver Stage |
Use Scenario: Guards image sensor and serializer ICs from supply rail disturbances caused by nearby solenoid actuation or relay switching. IC Role / Device Role / Timing Role: Secondary-level TVS on 12 V camera module input, downstream of main fuse and upstream of LDO. Use Value: Clamps within 100 ns to protect fast-switching serializers; 175 °C rating supports placement near hot optics housings. |
Use Scenario: Protects gate drivers and current sense amplifiers from inductive kickback when EPS motor phases commutate. IC Role / Device Role / Timing Role: High-power unidirectional TVS across H-bridge supply rail, thermally coupled to heatsink plane. Use Value: 1.0 °C/W RθJC enables direct thermal coupling to chassis ground, sustaining repeated 3600 W pulses without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ10A-E3/5AT | DO-214AC (SMA) package; lower PPPM (400 W); VBR = 11.1–12.3 V; same VWM (10 V) | Limited to lower-energy transients; not rated for ISO7637-2 load dump; no AEC-Q101 qualification | Use where space constraints prohibit DO-218AB and surge energy remains below 400 W. |
| TPSMD10A | DO-218AB package; same VWM/VBR; PPPM = 3000 W (10/1000 μs); TJ max = 150 °C; AEC-Q101 qualified | Lower surge rating and reduced high-temp margin vs. SM5S10HE3/2D; suitable for less severe automotive zones | Select when full 3600 W capability is unnecessary and cost optimization is prioritized over extreme thermal headroom. |
Compared with SMAJ10A-E3/5AT and TPSMD10A, the SM5S10HE3/2D delivers superior surge robustness (3600 W), extended temperature capability (175 °C), and verified ISO7637-2 compliance - making it the preferred choice for critical front-end protection in engine bay and BCM applications.
Availability
SM5S10HE3/2D is available at Aetrix Electronics and suitable for automotive body control modules, engine control units, ADAS camera power supplies, and electric power steering systems requiring stable component supply with AEC-Q101 assurance and high-temperature reliability.
Supply support for SM5S10HE3/2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The SM5S10HE3/2D belongs to Vishay's PAR® family of high-power surface-mount TVS diodes, engineered specifically for ruggedized automotive load dump and inductive switching protection with emphasis on thermal performance and AEC-Q101 compliance.
FAQ
What is the clamping voltage of the SM5S10HE3/2D under a 10/1000 μs surge?
The SM5S10HE3/2D clamps to a maximum of 18.8 V when subjected to its rated peak pulse current of 191 A (10/1000 μs waveform). This value is measured at the device terminals under standardized test conditions and defines the upper voltage limit imposed on the protected circuit during such transients. The SM5S10HE3/2D achieves this clamping while maintaining low dynamic impedance, ensuring consistent protection across production lots.
Is the SM5S10HE3/2D suitable for bidirectional transient suppression?
No, the SM5S10HE3/2D is strictly unidirectional and must be used with correct polarity: anode (metal heatsink) connected to system ground or low-side return, cathode to the line being protected. It does not suppress reverse-voltage transients. For bidirectional protection, a separate device such as the SMBJ10CA or a dedicated bidirectional TVS in DO-218AB would be required - the SM5S10HE3/2D itself provides no reverse conduction capability beyond its specified leakage.
Does the SM5S10HE3/2D require a heatsink footprint on the PCB?
Yes - the metal heatsink (Lead 2) of the SM5S10HE3/2D must be soldered to a minimum 100 mm² copper area (preferably internal or external ground plane) to achieve its rated 3600 W surge capability and maintain junction temperature within limits. Without adequate copper thermal mass, the SM5S10HE3/2D cannot sustain its full PPPM rating and may fail prematurely under repeated surges. The datasheet specifies RθJC = 1.0 °C/W assuming proper mounting.
What is the meaning of the "HE3/2D" suffix in SM5S10HE3/2D?
The "HE3" suffix indicates RoHS-compliant, AEC-Q101-qualified construction with matte tin-plated leads meeting JESD201 Class 2 whisker resistance. The "/2D" denotes the packaging format: 13-inch plastic tape and reel, 750 units per reel, with anode oriented toward the sprocket hole. This ordering code ensures traceability, assembly compatibility, and compliance alignment - all confirmed for the SM5S10HE3/2D in Vishay's official documentation.
How does the SM5S10HE3/2D compare to the SM5S10AHE3/2D variant?
The SM5S10HE3/2D has a wider VBR range (11.1–13.6 V) versus the SM5S10AHE3/2D (11.1–12.3 V), reflecting looser breakdown tolerance (±15 % vs. ±10 %). Both share identical VWM (10 V), PPPM (3600 W), and thermal ratings. The SM5S10HE3/2D is suited for applications where tighter clamping consistency is not required, offering cost and availability advantages - the SM5S10HE3/2D remains fully interchangeable in most automotive load dump designs unless strict VBR matching is mandated.
SM5S10HE3/2D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.1V
- Voltage - Clamping (Max) @ Ipp:
- 18.8V
- Current - Peak Pulse (10/1000µs):
- 191A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM5S10HE3/2D FAQ
1.How can I place an order for SM5S10HE3/2D through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S10HE3/2D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S10HE3/2D reliable?
The price and inventory of SM5S10HE3/2D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S10HE3/2D is usually 5 days.
3.What payment methods are accepted for SM5S10HE3/2D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S10HE3/2D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S10HE3/2D?
SM5S10HE3/2D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S10HE3/2D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S10HE3/2D?
For technical support, including SM5S10HE3/2D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S10HE3/2D requirements.
6.How does Aetrix verify that SM5S10HE3/2D is sourced from the original manufacturer or authorized distributors?
All SM5S10HE3/2D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S10HE3/2D meets industry standards.
7.What is the process for return or replacement of SM5S10HE3/2D?
All SM5S10HE3/2D units undergo pre-shipment inspection (PSI). If there is an issue with SM5S10HE3/2D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S10HE3/2D part is unused and in its original packaging.
Return procedure for SM5S10HE3/2D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S10HE3/2D Tags

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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