Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM5S11AHE3/2D

Part No.:
SM5S11AHE3/2D
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-218AB
Datasheet:
AetrixSM5S11AHE3/2D.pdf
Description:
TVS DIODE 11VWM 18.2VC DO218AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,060

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM5S11AHE3/2D from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection in power line circuits. It features a 12.2 V minimum breakdown voltage (VBR), 11.0 V standoff voltage (VWM), 198 A peak pulse current (IPPM) under 10/1000 µs waveform, 18.2 V maximum clamping voltage (VC), and AEC-Q101 qualification for under-hood applications.

For engineers reviewing the SM5S11AHE3/2D datasheet, SM5S11AHE3/2D pinout, SM5S11AHE3/2D application, or SM5S11AHE3/2D equivalent, key selection criteria include unidirectional polarity, DO-218AB package thermal performance (RθJC = 1.0 °C/W), 175 °C junction rating, low leakage (<10 µA at VWM), and ISO7637-2 compliance for automotive transients.

Technical Context

This TVS diode operates as a unidirectional clamping device with anode-connected heatsink configuration, enabling direct mounting to PCB copper for enhanced thermal dissipation. Its junction passivation and anisotropic rectifier technology ensure stable operation up to TJ = 175 °C and low forward voltage drop (≤2.0 V at 100 A).

The device delivers 3600 W peak pulse power (10/1000 µs), 2800 W (10/10 000 µs), and withstands 500 A non-repetitive surge current (8.3 ms half-sine). It meets MSL Level 1 per J-STD-020 and passes JESD201 Class 2 whisker testing via HE3 suffix.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 11.0 V - Maximum continuous reverse operating voltage before clamping begins
VBR (min/max) 12.2 V / 13.5 V - Breakdown voltage range at 5 mA test current; defines clamping onset threshold
VC 18.2 V - Maximum clamped voltage at 198 A IPPM; determines protected circuit's worst-case overvoltage
IPPM 198 A - Peak pulse current handling under 10/1000 µs waveform; supports high-energy load dump events
TJ max 175 °C - Enables placement near hot engine control units without derating concerns
RθJC 1.0 °C/W - Low thermal resistance enables effective heat transfer to heatsink or PCB copper pour
Leakage (at VWM, 25 °C) <10 µA - Minimizes standby power loss in always-on automotive modules

Pinout & Package

Package: DO-218AB - Surface-mount molded case with integral metal heatsink (anode terminal), UL 94 V-0 rated, matte tin-plated leads solderable per J-STD-002/JESD22-B102.

Pin/Terminal Circuit Role Design Meaning
Lead 1 Cathode Connected to protected circuit's positive rail; carries transient current during clamping
Lead 2 / Metal Heatsink Anode Primary thermal path and electrical return; must be soldered to large copper area for RθJC = 1.0 °C/W performance

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock
Junction passivation optimized design Reduces parameter drift over lifetime and improves stability under high-temperature bias conditions
Meets ISO7637-2 surge specification Rated for standardized automotive load dump pulses (e.g., 12 V system, 10 ms exponential waveform)
MSL Level 1 (245 °C peak) Compatible with standard lead-free reflow profiles without moisture sensitivity concerns
JESD201 Class 2 whisker resistance Prevents tin whisker growth under thermal stress, ensuring long-term interconnect integrity

Applications

Automotive Engine Control Unit (ECU) Power Input Protection Body Control Module (BCM) Battery Line Protection

Use Scenario: Protects 12 V supply input of engine ECU against alternator load dump surges up to 35 V and 100 ms duration.

IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between battery rail and DC-DC converter input.

Use Value: Limits transient voltage to ≤18.2 V, preventing damage to downstream LDOs and microcontrollers rated for 20 V absolute maximum.

Use Scenario: Shields BCM power domain from jump-start spikes and battery reversal-induced transients in vehicle body electronics.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on main 12 V distribution line feeding multiple sub-circuits.

Use Value: Withstands 500 A surge (8.3 ms) and maintains <10 µA leakage, minimizing quiescent current in always-on modules.

Advanced Driver Assistance Systems (ADAS) Camera Power Rail Electric Power Steering (EPS) Motor Driver Supply Protection

Use Scenario: Safeguards image sensor and ISP power rails in rear-view or surround-view cameras exposed to harsh automotive environments.

IC Role / Device Role / Timing Role: Secondary TVS stage after fuse and upstream filter, providing fast-response clamping.

Use Value: 175 °C junction rating allows placement near camera housing without thermal derating; DO-218AB footprint fits tight board space.

Use Scenario: Protects H-bridge gate drivers and current sense amplifiers from inductive kickback during EPS motor commutation.

IC Role / Device Role / Timing Role: Bidirectional-capable systems use two unidirectional devices; SM5S11AHE3/2D serves as anode-grounded clamp on high-side supply.

Use Value: 1.0 °C/W RθJC enables direct thermal coupling to motor driver heatsink, sustaining repeated 198 A pulses without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ11A-E3/5AT DO-214AC package; higher RθJA (50 °C/W vs. DO-218AB's 1.0 °C/W); 18.2 V VC at 152 A IPPM Limited to lower-power or ambient-cooled applications; not recommended for high-temperature under-hood placement Select when board space constraints preclude DO-218AB or thermal budget allows higher junction rise
1.5SMC11A DO-214AB package; same VWM/VBR but lower PPPM (1500 W vs. 3600 W); 19.0 V VC at 79 A IPPM Suitable only for non-load-dump scenarios (e.g., ESD-only protection); fails ISO7637-2 compliance Choose only for cost-sensitive consumer applications where automotive surge immunity is not required

Compared with SMAJ11A-E3/5AT and 1.5SMC11A, SM5S11AHE3/2D delivers 2.4× higher peak pulse power and 2.5× higher IPPM in a thermally superior package, making it the sole option among the three qualified for AEC-Q101 and ISO7637-2 load dump protection.

Availability

SM5S11AHE3/2D is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, ADAS camera systems, and electric power steering applications requiring stable component supply across extended temperature and high-reliability environments.

Supply support for SM5S11AHE3/2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.

The SM5SxxA series is engineered specifically for automotive power line transient suppression, emphasizing AEC-Q101 qualification, high-temperature operation (up to 175 °C), and robust ISO7637-2 compliance in the DO-218AB package.

FAQ

What is the polarity configuration of the SM5S11AHE3/2D?

The SM5S11AHE3/2D is a unidirectional TVS diode with anode connected to the metal heatsink (Lead 2) and cathode on Lead 1. This configuration requires correct orientation during PCB layout to ensure proper clamping action on positive transients applied to the protected line. The datasheet explicitly states "Polarity: heatsink is anode", confirming its unidirectional behavior and ruling out bidirectional use without external circuitry.

Does the SM5S11AHE3/2D meet automotive qualification standards?

Yes, the SM5S11AHE3/2D is AEC-Q101 qualified, as confirmed in the Vishay document 88382 revision 22-Jul-16. It also meets ISO7637-2 surge requirements for automotive load dump events and complies with JESD201 Class 2 whisker resistance and J-STD-020 MSL Level 1 reflow specifications - all critical for under-hood deployment.

What is the thermal resistance and how does it impact layout for the SM5S11AHE3/2D?

The SM5S11AHE3/2D has a typical junction-to-case thermal resistance (RθJC) of 1.0 °C/W. To achieve this value, the metal heatsink (Lead 2/anode) must be soldered to a minimum 100 mm² copper pour on the PCB. Insufficient copper area increases thermal resistance, raising junction temperature and reducing surge capability - especially critical during repetitive load dump events.

How does the clamping voltage of the SM5S11AHE3/2D compare to its breakdown voltage?

The SM5S11AHE3/2D has a minimum breakdown voltage (VBR) of 12.2 V at 5 mA and a maximum clamping voltage (VC) of 18.2 V at 198 A. This 6.0 V differential ensures sufficient margin below typical 20 V absolute maximum ratings of downstream ICs while maintaining fast response to transients - a key design advantage over higher-VC alternatives like SMAJ11A.

What packaging and reel information applies to the SM5S11AHE3/2D?

The SM5S11AHE3/2D ships in 13" diameter plastic tape and reel with 750 units per reel (base quantity). The "2D" package code indicates the preferred tape-and-reel configuration, and "HE3" denotes RoHS-compliant, AEC-Q101 qualified construction with JESD201 Class 2 whisker resistance. Anode orientation is toward the sprocket hole per ordering information in the datasheet.

SM5S11AHE3/2D Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-218AB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
11V
Voltage - Breakdown (Min):
12.2V
Voltage - Clamping (Max) @ Ipp:
18.2V
Current - Peak Pulse (10/1000µs):
198A
Power - Peak Pulse:
3600W (3.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AB

SM5S11AHE3/2D FAQ

1.How can I place an order for SM5S11AHE3/2D through Aetrix?

Please submit a Request for Quotation (RFQ) for SM5S11AHE3/2D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM5S11AHE3/2D reliable?

The price and inventory of SM5S11AHE3/2D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S11AHE3/2D is usually 5 days.

3.What payment methods are accepted for SM5S11AHE3/2D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S11AHE3/2D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM5S11AHE3/2D?

SM5S11AHE3/2D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM5S11AHE3/2D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM5S11AHE3/2D?

For technical support, including SM5S11AHE3/2D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S11AHE3/2D requirements.

6.How does Aetrix verify that SM5S11AHE3/2D is sourced from the original manufacturer or authorized distributors?

All SM5S11AHE3/2D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S11AHE3/2D meets industry standards.

7.What is the process for return or replacement of SM5S11AHE3/2D?

All SM5S11AHE3/2D units undergo pre-shipment inspection (PSI). If there is an issue with SM5S11AHE3/2D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM5S11AHE3/2D part is unused and in its original packaging.

Return procedure for SM5S11AHE3/2D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM5S11AHE3/2D Tags

  • SM5S11AHE3/2D
  • SM5S11AHE3/2D PDF
  • SM5S11AHE3/2D Datasheet
  • SM5S11AHE3/2D Specifications
  • SM5S11AHE3/2D Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM5S11AHE3/2D
  • Buy SM5S11AHE3/2D
  • SM5S11AHE3/2D Price
  • SM5S11AHE3/2D Distributor
  • SM5S11AHE3/2D Supplier
  • SM5S11AHE3/2D Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER