Vishay General Semiconductor - Diodes Division SM5S11AHE3_A/I
- Part No.:
- SM5S11AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM5S11AHE3_A/I.pdf
- Description:
- TVS DIODE 11VWM 18.2VC DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,676
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Product details
Overview
SM5S11AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 11.1 V to 13.5 V breakdown voltage (VBR), 11 V stand-off voltage (VWM), 3600 W peak pulse power (10/1000 µs), 198 A peak pulse current, and AEC-Q101 qualification for under-hood applications.
For engineers reviewing the SM5S11AHE3_A/I datasheet, SM5S11AHE3_A/I pinout, SM5S11AHE3_A/I application, or SM5S11AHE3_A/I equivalent, this device is selected for high-reliability 12 V automotive power rail protection where TJ = 175 °C operation, low leakage (<10 µA at VWM), and ISO7637-2 compliance are required.
Technical Context
The SM5S11AHE3_A/I uses passivated anisotropic rectifier technology with junction passivation optimized for stable clamping under repetitive surge stress. Its DO-218AB package integrates a metal heatsink as the anode terminal, enabling low thermal resistance (RθJM = 0.45 °C/W) and direct PCB heat sinking.
It operates across -55 °C to +175 °C junction temperature range and meets MSL Level 1 (245 °C peak reflow). The device exhibits a positive VBR temperature coefficient of +0.072 %/°C, ensuring predictable voltage drift over temperature in automotive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 12.2 V / 12.9 V / 13.5 V - defines precise clamping onset threshold at 5 mA test current |
| VWM | 11 V - maximum continuous reverse operating voltage before leakage exceeds 10 µA |
| IPPM (10/1000 µs) | 198 A - peak surge current capability for standard lightning/inductive-switching transients |
| VC @ IPPM | 18.2 V - clamped voltage during full-rated surge, limiting downstream IC stress |
| PPPM | 3600 W - peak pulse power handling for 10/1000 µs waveform, critical for load dump immunity |
| TJ max | +175 °C - enables placement near hot engine control units without derating |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling and HTRB |
Pinout & Package
Package: DO-218AB - molded surface-mount case with integral metal heatsink; anode connected to heatsink (lead 2), cathode on lead 1; UL 94 V-0 rated compound; matte tin-plated leads compliant with J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Cathode | Connected to protected circuit's positive rail; carries full surge current into clamp path |
| Lead 2 / Metal Heatsink | Anode | Mounted directly to PCB copper pour for thermal dissipation; serves as primary ground reference |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivated anisotropic rectifier | Enables stable VBR and low leakage (<10 µA at VWM) over lifetime and temperature |
| TJ = 175 °C operation | Supports placement in high-ambient zones (e.g., engine bay ECUs) without thermal derating |
| ISO7637-2 compliance | Validated for automotive load dump (Pulse 5a) and switching transient (Pulse 1/2a/3a) immunity |
| MSL Level 1 (245 °C) | Allows single-reflow assembly without moisture sensitivity concerns or baking requirements |
| HE3 suffix whisker resistance | Meets JESD 201 Class 2 for long-term reliability in vibration-prone automotive environments |
Applications
| Automotive Load Dump Protection | 12 V Power Rail Surge Suppression |
|---|---|
Use Scenario: Protecting engine control units (ECUs) during alternator load dump events (ISO 7637-2 Pulse 5a). IC Role / Device Role / Timing Role: Unidirectional TVS diode clamping transient voltage to ≤18.2 V within nanoseconds. Use Value: Prevents damage to downstream 12 V-rated microcontrollers and CAN transceivers by limiting overvoltage stress. |
Use Scenario: Safeguarding infotainment head units against inductive switching spikes from relays and solenoids. IC Role / Device Role / Timing Role: Fast-response voltage clamp absorbing up to 3600 W surges with <1 ns response time. Use Value: Eliminates need for additional RC snubbers or multi-stage protection, reducing BOM count and board space. |
| Industrial Motor Drive DC Bus Protection | Commercial Vehicle Battery Management |
Use Scenario: Shielding gate drivers and current sensors on 24 V DC bus lines in hydraulic pump controllers. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing repetitive 10/1000 µs transients induced by contactor switching. Use Value: Maintains system uptime by preventing latch-up or burnout in sensitive analog front-ends during field operation. |
Use Scenario: Securing battery monitoring ICs and isolation amplifiers in 24 V truck/trailer BMS modules. IC Role / Device Role / Timing Role: AEC-Q101 qualified unidirectional suppressor with 175 °C rating for under-chassis mounting. Use Value: Ensures functional safety compliance (ISO 26262 ASIL-B support) through validated automotive reliability testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM5S11AHM3_A/I | Same VBR, VWM, and PPPM; HM3 suffix indicates halogen-free, RoHS-compliant, and AEC-Q101 qualified variant with identical DO-218AB package | No functional difference; intended as direct replacement per Vishay's "Not For New Designs" notice for HE3 series | Select HM3 when new designs require latest material compliance (halogen-free) and same automotive qualification level |
| SMAJ11A | Lower PPPM (400 W vs. 3600 W); SMA package (DO-214AC); VBR 12.2–13.5 V; no AEC-Q101 qualification | Limited to low-energy transients; unsuitable for load dump; requires derating above 85 °C ambient | Use only in cost-sensitive, non-automotive applications with <500 W surge exposure and no high-temp requirement |
Compared with SM5S11AHE3_A/I, SM5S11AHM3_A/I offers identical electrical and thermal performance with updated environmental compliance, while SMAJ11A provides basic clamping at one-ninth the surge capacity and lacks automotive qualification-making it unsuitable for load dump or under-hood use.
Availability
SM5S11AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECU protection, 12 V/24 V industrial power rail surge suppression, and commercial vehicle battery management systems requiring stable component supply and long-lifecycle support.
Supply support for SM5S11AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The SM5SxxA family is engineered specifically for automotive-grade transient suppression, emphasizing high-temperature stability (TJ = 175 °C), ISO7637-2 compliance, and robust packaging for under-hood deployment.
FAQ
What is the clamping voltage of SM5S11AHE3_A/I at its rated peak pulse current?
The SM5S11AHE3_A/I has a maximum clamping voltage (VC) of 18.2 V when subjected to its rated 198 A peak pulse current (IPPM) under a 10/1000 µs waveform. This value ensures downstream 12 V logic and interface ICs remain within safe operating limits during surge events. The SM5S11AHE3_A/I achieves this clamping performance consistently across its full -55 °C to +175 °C operating junction temperature range.
Is SM5S11AHE3_A/I suitable for new automotive designs?
No-Vishay explicitly designates SM5S11AHE3_A/I as "Not For New Designs," recommending SM5S11AHM3_A/I as the preferred alternative for new projects. While SM5S11AHE3_A/I remains fully functional and supported, the HM3 variant offers identical electrical specs with enhanced halogen-free compliance and reflects Vishay's current material and qualification standards. Engineers designing new automotive systems should specify SM5S11AHE3_A/I only for legacy BOM continuity.
How does the DO-218AB package of SM5S11AHE3_A/I improve thermal performance?
The DO-218AB package of SM5S11AHE3_A/I integrates a large metal heatsink as the anode terminal (lead 2), providing a direct thermal path from the silicon junction to the PCB copper pour. With a measured RθJM of 0.45 °C/W, this structure enables efficient heat extraction during high-energy transients. Unlike smaller SMD packages, DO-218AB allows SM5S11AHE3_A/I to sustain 3600 W surges without thermal runaway-even at 175 °C ambient-making it uniquely suited for engine compartment applications.
Does SM5S11AHE3_A/I meet ISO 7637-2 requirements?
Yes-SM5S11AHE3_A/I is verified to meet ISO 7637-2 test conditions for automotive transient immunity, including Pulse 5a (load dump) and Pulse 1/2a/3a (inductive switching and supply interruption). Its 3600 W peak pulse power rating and 18.2 V clamping voltage ensure compliance when mounted per recommended layout (anode heatsink tied to large ground plane). Vishay confirms this capability in datasheet revision 10-Feb-2026, Document Number 88382.
What is the leakage current specification for SM5S11AHE3_A/I at maximum operating temperature?
At VWM = 11 V and TJ = 175 °C, the SM5S11AHE3_A/I exhibits a maximum reverse leakage current (ID) of 10 µA. This low, temperature-stable leakage-enabled by junction passivation-is critical for minimizing standby power loss in always-on automotive modules such as body control units and telematics gateways. The SM5S11AHE3_A/I maintains this performance without degradation over extended high-temperature operation.
SM5S11AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 198A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM5S11AHE3_A/I FAQ
1.How can I place an order for SM5S11AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S11AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S11AHE3_A/I reliable?
The price and inventory of SM5S11AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S11AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM5S11AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S11AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S11AHE3_A/I?
SM5S11AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S11AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S11AHE3_A/I?
For technical support, including SM5S11AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S11AHE3_A/I requirements.
6.How does Aetrix verify that SM5S11AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM5S11AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S11AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM5S11AHE3_A/I?
All SM5S11AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM5S11AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S11AHE3_A/I part is unused and in its original packaging.
Return procedure for SM5S11AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S11AHE3_A/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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