Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM5S11AHM3/I

Part No.:
SM5S11AHM3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-218AC
Datasheet:
AetrixSM5S11AHM3/I.pdf
Description:
TVS DIODE 11VWM 18.2VC DO218AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,349

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM5S11AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 11.1 V to 13.5 V breakdown voltage (VBR), 11 V stand-off voltage (VWM), 3600 W peak pulse power (10/1000 μs), and AEC-Q101 qualified for automotive load dump protection.

For engineers reviewing the SM5S11AHM3/I datasheet, SM5S11AHM3/I pinout, SM5S11AHM3/I application, or SM5S11AHM3/I equivalent, this device supports high-reliability 175 °C junction operation, low leakage (<10 μA at VWM), and ISO7637-2 compliance - critical for under-hood automotive electronics and industrial power rail clamping.

Technical Context

This TVS diode uses passivated anisotropic rectifier technology with heatsink-as-anode polarity, enabling robust clamping during 10/1000 μs transients up to 150 A peak pulse current while maintaining ≤18.2 V clamping voltage (VC) at rated IPPM. Its MSL Level 1 rating and 245 °C lead-free solder compatibility support automated SMT assembly.

The device operates across -55 °C to +175 °C junction temperature range, exhibits 0.072 %/°C VBR temperature coefficient, and delivers 5 W steady-state power dissipation on infinite heatsink - optimized for sustained surge handling in automotive power distribution modules.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/typ/max) 12.2 V / 12.9 V / 13.5 V - defines precise clamping onset threshold under 5 mA test current
VWM 11 V - maximum continuous reverse working voltage before leakage exceeds 10 μA
VC @ IPPM 18.2 V - clamped voltage at 150 A peak pulse ensures downstream ICs remain below absolute max ratings
PPPM (10/1000 μs) 3600 W - enables single-event suppression of severe load dump surges per ISO7637-2
TJ max +175 °C - supports placement near high-temperature engine control units without derating
Leakage @ VWM, 25 °C <10 μA - minimizes standby power loss in always-on vehicle subsystems
AEC-Q101 Qualified Yes - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD

Pinout & Package

Package: DO-218AB - molded surface-mount case with metal heatsink acting as anode terminal; meets UL 94 V-0, RoHS-compliant, matte tin-plated leads.

Pin/Terminal Circuit Role Design Meaning
Anode (Heatsink) High-current return path and thermal interface Must be soldered to large copper area for RθJM = 0.45 °C/W thermal performance
Cathode (Lead 1) Transient voltage sensing and clamping node Connected to protected line (e.g., battery rail); carries full surge current during clamp event

Key Features

Feature Design Value
Junction passivation Enables stable VBR and low leakage over lifetime at 175 °C junction temperature
Unidirectional polarity Optimized for DC-biased automotive rails where reverse conduction is not required
ISO7637-2 compliance Validated for load dump waveform testing (10 ms exponential) up to 3200 W at 125 °C initial TJ
MSL Level 1 Allows unlimited floor life and reflow at 245 °C peak without preconditioning
Low forward voltage drop VF ≤ 2.0 V at 100 A pulse ensures minimal conduction loss during surge events

Applications

Automotive Load Dump Protection Engine Control Unit (ECU) Power Rail

Use Scenario: Suppresses 12 V system load dump transients (up to 40 V, 100 ms) caused by alternator field-circuit interruption.

IC Role / Device Role / Timing Role: Primary clamping device placed between battery input and DC/DC converter input stage.

Use Value: Limits voltage to ≤18.2 V during 150 A surge, preventing damage to 24 V-rated buck controllers and microcontrollers.

Use Scenario: Protects ECU main 5 V/3.3 V supply rails from coupled transients originating from solenoid drivers and ignition coils.

IC Role / Device Role / Timing Role: Secondary TVS located after bulk filtering, providing fast-response overvoltage shutdown before LDOs or PMICs.

Use Value: Sub-10 ns response time and 0.072 %/°C VBR stability ensure consistent clamping across under-hood temperature swings (-40 °C to +150 °C).

Body Control Module (BCM) Input Protection Industrial 24 V PLC I/O Channel

Use Scenario: Shields BCM LIN/CAN bus power inputs from inductive switching noise generated by door lock actuators and window motors.

IC Role / Device Role / Timing Role: Standoff-rated protector on 12 V auxiliary rail feeding CAN transceivers and sensor interfaces.

Use Value: 11 V VWM allows normal operation while blocking >12.2 V transients; <10 μA leakage preserves sleep-mode current budget.

Use Scenario: Guards programmable logic controller digital input channels against field-wiring induced surges in factory automation environments.

IC Role / Device Role / Timing Role: Front-end transient suppressor on 24 V optocoupler input circuitry.

Use Value: 3600 W PPPM withstands repeated 1 kV/500 A surge events per IEC 61000-4-5; DO-218AB footprint supports high-current PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SM5S11AHM3 Same electrical specs and DO-218AB package; differs only in packaging - no /I suffix means no tape-and-reel orientation marking (anode direction not indicated on reel) Acceptable where automated pick-and-place does not require sprocket-hole-aligned anode orientation Select SM5S11AHM3/I when anode-toward-sprocket-hole tape orientation is required for vision-guided placement verification.
SMAJ11AHE3/A Lower PPPM (400 W), SMA package (smaller thermal mass), higher VC (18.2 V → 19.0 V), same VBR range Suitable for lower-energy transients; not rated for ISO7637-2 load dump or 175 °C operation Choose SMAJ11AHE3/A only for cost-sensitive non-automotive applications with <50 A surge requirements and ambient <125 °C.

Compared with SM5S11AHM3/I, SM5S11AHM3 offers identical protection performance but lacks reel orientation marking, while SMAJ11AHE3/A provides reduced surge capability and thermal robustness - making SM5S11AHM3/I the sole choice for AEC-Q101-compliant, high-power automotive load dump protection.

Availability

SM5S11AHM3/I is available at Aetrix Electronics and suitable for automotive load dump protection, engine control unit (ECU) power rail clamping, and industrial 24 V PLC I/O channel surge suppression requiring stable component supply across extended temperature and high-reliability production cycles.

Supply support for SM5S11AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, MOSFETs, and TVS devices, with emphasis on high-reliability, high-temperature, and automotive-qualified components.

The SM5SxxA family was developed specifically for automotive load dump and ISO7637-2 transient suppression, featuring DO-218AB packaging optimized for thermal performance and AEC-Q101 validation across -55 °C to +175 °C operation.

FAQ

What is the clamping voltage of SM5S11AHM3/I at its rated peak pulse current?

The SM5S11AHM3/I has a maximum clamping voltage (VC) of 18.2 V at its rated peak pulse current (IPPM) of 150 A under 10/1000 μs waveform conditions. This value is guaranteed per the Vishay datasheet and ensures protected downstream circuitry remains within safe operating limits during surge events. The SM5S11AHM3/I maintains this clamping performance across its full operating temperature range.

Is SM5S11AHM3/I suitable for automotive applications requiring AEC-Q101 qualification?

Yes, SM5S11AHM3/I is explicitly AEC-Q101 qualified per the Vishay datasheet, with validation covering temperature cycling, high-temperature reverse bias (HTRB), and electrostatic discharge (ESD) testing. Its 175 °C maximum junction temperature rating and ISO7637-2 compliance make SM5S11AHM3/I appropriate for under-hood automotive modules including ECUs, body control units, and ADAS power supplies.

What does the "/I" suffix indicate in SM5S11AHM3/I?

The "/I" suffix in SM5S11AHM3/I denotes tape-and-reel packaging with anode orientation toward the sprocket hole - a requirement for vision-guided automated placement systems that verify terminal alignment. This marking ensures correct anode-heatsink orientation during SMT assembly, unlike the base SM5S11AHM3 which lacks orientation marking. Both share identical electrical and thermal specifications.

How does SM5S11AHM3/I compare to standard SMAJ series TVS diodes?

SM5S11AHM3/I delivers 3600 W peak pulse power (10/1000 μs), nine times higher than SMAJ11AHE3/A's 400 W rating, and supports 175 °C operation versus SMAJ's 150 °C limit. It also meets ISO7637-2 load dump requirements and carries AEC-Q101 qualification - features absent in the SMAJ series. For high-energy automotive transients, SM5S11AHM3/I is not interchangeable with SMAJ11AHE3/A.

What is the thermal resistance from junction to mount (RθJM) for SM5S11AHM3/I?

The SM5S11AHM3/I has a typical junction-to-mount thermal resistance (RθJM) of 0.45 °C/W when mounted on a thermally optimized heatsink pad, as specified in the Vishay datasheet. This low value enables efficient heat transfer from the silicon junction through the metal heatsink terminal, supporting sustained 5 W power dissipation and high-reliability operation at 175 °C junction temperature. Proper PCB copper area design is essential to achieve this RθJM.

SM5S11AHM3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-218AC
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
11V
Voltage - Breakdown (Min):
12.2V
Voltage - Clamping (Max) @ Ipp:
18.2V
Current - Peak Pulse (10/1000µs):
198A
Power - Peak Pulse:
3600W (3.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AC

SM5S11AHM3/I FAQ

1.How can I place an order for SM5S11AHM3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SM5S11AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM5S11AHM3/I reliable?

The price and inventory of SM5S11AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S11AHM3/I is usually 5 days.

3.What payment methods are accepted for SM5S11AHM3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S11AHM3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM5S11AHM3/I?

SM5S11AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM5S11AHM3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM5S11AHM3/I?

For technical support, including SM5S11AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S11AHM3/I requirements.

6.How does Aetrix verify that SM5S11AHM3/I is sourced from the original manufacturer or authorized distributors?

All SM5S11AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S11AHM3/I meets industry standards.

7.What is the process for return or replacement of SM5S11AHM3/I?

All SM5S11AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM5S11AHM3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM5S11AHM3/I part is unused and in its original packaging.

Return procedure for SM5S11AHM3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM5S11AHM3/I Tags

  • SM5S11AHM3/I
  • SM5S11AHM3/I PDF
  • SM5S11AHM3/I Datasheet
  • SM5S11AHM3/I Specifications
  • SM5S11AHM3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM5S11AHM3/I
  • Buy SM5S11AHM3/I
  • SM5S11AHM3/I Price
  • SM5S11AHM3/I Distributor
  • SM5S11AHM3/I Supplier
  • SM5S11AHM3/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER