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Vishay General Semiconductor - Diodes Division SM5S11HE3/2D
- Part No.:
- SM5S11HE3/2D
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM5S11HE3/2D.pdf
- Description:
- TVS DIODE 11VWM 20.1VC DO218AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,536
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Product details
Overview
SM5S11HE3/2D from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) diode designed for automotive load dump protection. It features a 12.2 V minimum breakdown voltage (VBR), 11.0 V standoff voltage (VWM), 179 A peak pulse current (IPPM) at 10/1000 µs, 20.1 V clamping voltage (VC), and operates up to TJ = 175 °C - enabling robust protection in high-temperature engine bay electronics.
For engineers reviewing the SM5S11HE3/2D datasheet, SM5S11HE3/2D pinout, SM5S11HE3/2D application, or SM5S11HE3/2D equivalent, this device is selected for its AEC-Q101 qualification, DO-218AB package thermal performance, low leakage (<10 µA at VWM), and ISO7637-2 compliance - critical for automotive power rail surge immunity validation.
Technical Context
The SM5S11HE3/2D employs passivated anisotropic rectifier technology optimized for high-reliability junction stability under repetitive surge stress. Its unidirectional polarity and heatsink-anode configuration support direct mounting to PCB copper planes for enhanced thermal dissipation.
Rated for 3600 W peak pulse power (10/1000 µs), it delivers 5 W steady-state power dissipation on infinite heatsink and maintains <2.0 V forward voltage at 100 A surge - ensuring minimal conduction loss during fault events while sustaining operation across -55 °C to +175 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11.0 V - maximum continuous reverse operating voltage before significant leakage; sets safe operating margin below battery nominal (12 V) and load dump thresholds. |
| VBR (min/max) | 12.2 V / 14.9 V - verified breakdown range at 5 mA test current; ensures consistent turn-on behavior across production lots and temperature. |
| VC @ IPPM | 20.1 V - clamping voltage at 179 A peak pulse; limits downstream IC stress during ISO7637-2 Pulse 5a load dump transients. |
| IPPM (10/1000 µs) | 179 A - peak surge current handling capacity; supports >3.6 kW transient energy absorption without failure. |
| TJ max. | +175 °C - qualified junction temperature limit; enables placement near high-power components in engine control units and ADAS modules. |
| RθJC | 1.0 °C/W - low junction-to-case thermal resistance; allows effective heat transfer to heatsink or PCB copper when mounted with recommended pad layout. |
| AEC-Q101 | Qualified - certified for automotive electronic systems per stress test requirements including HTGB, HTRB, and temperature cycling. |
Pinout & Package
Package: DO-218AB - surface-mount, anode-heatsink configuration with matte tin-plated leads; meets UL 94 V-0, MSL Level 1 (245 °C reflow), and JESD201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Cathode | Connected to protected circuit node; carries reverse surge current into the device during overvoltage events. |
| Lead 2 / Metal Heatsink | Anode | Electrically and thermally connected to PCB ground plane or heatsink; provides primary thermal path and defines polarity orientation. |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier process ensures stable VBR and low leakage (<10 µA at VWM) over lifetime and temperature. |
| High surge capability | 3600 W (10/1000 µs) and 2800 W (10/10000 µs) rating enables single-device protection against severe automotive load dump and inductive switching events. |
| Low forward voltage drop | <2.0 V at 100 A surge current minimizes conduction losses and reduces thermal stress during sustained fault conditions. |
| ISO7637-2 compliance | Validated for Pulse 5a (load dump) under specified test conditions - simplifies system-level EMC certification for 12 V automotive networks. |
| DO-218AB thermal design | 1.0 °C/W RθJC and metal heatsink terminal enable direct thermal coupling to PCB copper, supporting >5 W continuous dissipation with proper layout. |
Applications
| Engine Control Unit (ECU) Power Input Protection | Body Control Module (BCM) Battery Rail Clamping |
|---|---|
|
Use Scenario: Protects microcontroller power supplies and CAN transceivers from 12 V battery line transients during alternator load dump (ISO7637-2 Pulse 5a). IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between battery rail and local DC/DC input, clamping surges within 20.1 V to prevent overvoltage damage. Use Value: Enables reliable operation at TJ = 175 °C near engine compartment heat sources while maintaining <10 µA leakage at 11.0 V standby. |
Use Scenario: Shields LIN bus interface ICs and power management ICs from relay coil flyback and jump-start surges in vehicle body electronics. IC Role / Device Role / Timing Role: Standoff-rated TVS on 12 V supply rail, activated only during >12.2 V transients to avoid interference with normal 11–14 V battery operation. Use Value: Delivers 179 A surge current handling with 1.0 °C/W thermal resistance, allowing compact PCB layout without external heatsinks. |
| Advanced Driver Assistance Systems (ADAS) Camera Power Supply | Electric Power Steering (EPS) Motor Driver Protection |
|
Use Scenario: Safeguards image sensor and ISP power rails in front-facing cameras exposed to harsh under-hood environments and EMI-rich domains. IC Role / Device Role / Timing Role: Fast-response unidirectional clamp on 5 V or 3.3 V LDO input derived from 12 V, triggered by coupled transients from nearby high-current actuators. Use Value: AEC-Q101 qualification and -55 °C to +175 °C operation ensure functional safety compliance (ISO 26262 ASIL-B ready) in mission-critical vision systems. |
Use Scenario: Absorbs inductive kickback from H-bridge motor windings during PWM commutation and emergency stop events in EPS control units. IC Role / Device Role / Timing Role: Primary surge suppression element across motor driver high-side and low-side supply rails, limiting voltage overshoot to ≤20.1 V. Use Value: 3600 W peak pulse power rating and DO-218AB metal heatsink mounting sustain repeated 500 A IFSM surges without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ11A-E3/5AT | DO-214AC package; lower 400 W PPPM (10/1000 µs); 12.2 V VBR min; 18.2 V VC; 22.5 A IPPM. | Rated for general industrial use only; not AEC-Q101 qualified; insufficient for automotive load dump. | Select SMAJ11A-E3/5AT only for cost-sensitive non-automotive applications where surge energy is limited to <400 W. |
| TPSMD11A | DO-218AB package; same 12.2 V VBR min; 20.1 V VC; but rated at 3000 W PPPM (10/1000 µs); 150 A IPPM; AEC-Q101 qualified. | Lower surge rating than SM5S11HE3/2D; suitable for moderate-energy transients but not full ISO7637-2 Pulse 5a. | Choose TPSMD11A when system-level testing confirms worst-case surge energy remains below 3 kW - offering footprint compatibility with reduced cost. |
Compared with SMAJ11A-E3/5AT and TPSMD11A, the SM5S11HE3/2D provides 20% higher peak pulse power (3600 W vs. 3000 W/400 W), identical clamping (20.1 V), and full AEC-Q101 qualification - making it the only option validated for under-hood automotive load dump protection requiring ≥179 A surge current.
Availability
SM5S11HE3/2D is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, and ADAS camera power supplies requiring stable component supply with AEC-Q101 traceability and DO-218AB thermal reliability.
Supply support for SM5S11HE3/2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.
The SM5S series belongs to Vishay's PAR® (Protected Anisotropic Rectifier) TVS platform, engineered specifically for automotive-grade transient suppression with emphasis on high-temperature stability, surge robustness, and AEC-Q101 compliance.
FAQ
What is the clamping voltage of the SM5S11HE3/2D at its rated peak pulse current?
The SM5S11HE3/2D has a maximum clamping voltage (VC) of 20.1 V at its rated peak pulse current (IPPM) of 179 A under the 10/1000 µs waveform. This value is measured per standard test conditions in the Vishay datasheet (Document Number 88382) and defines the upper voltage limit imposed on protected circuits during surge events. The SM5S11HE3/2D maintains this clamping performance across its full operating temperature range.
Is the SM5S11HE3/2D qualified for automotive applications?
Yes, the SM5S11HE3/2D is AEC-Q101 qualified and explicitly designed for automotive use. It meets ISO7637-2 surge requirements for load dump protection and is rated for operation from -55 °C to +175 °C junction temperature. The HE3 suffix indicates RoHS compliance and JESD201 Class 2 whisker resistance - all confirmed in the official Vishay datasheet for SM5S11HE3/2D.
What package type does the SM5S11HE3/2D use, and how is polarity oriented?
The SM5S11HE3/2D uses the DO-218AB surface-mount package with anode-connected metal heatsink (Lead 2) and cathode (Lead 1). Polarity is defined such that the heatsink serves as the anode terminal - a critical layout consideration for correct circuit integration. This configuration enables direct thermal coupling to PCB copper and is documented in the mechanical drawings of the SM5S11HE3/2D datasheet.
How does the SM5S11HE3/2D compare to the SM5S11A variant?
The SM5S11HE3/2D is the ±10% tolerance version (VBR = 12.2–14.9 V), while SM5S11A specifies ±5% tolerance (VBR = 12.2–13.5 V). Both share identical package, thermal specs, and AEC-Q101 qualification. The SM5S11HE3/2D offers broader VBR range and is optimized for cost-sensitive automotive applications where tighter voltage tolerance is not required - confirmed in Table 1 of the SM5S11HE3/2D datasheet.
What is the maximum steady-state power dissipation for the SM5S11HE3/2D?
The SM5S11HE3/2D has a maximum steady-state power dissipation (PD) of 5.0 W when mounted on an infinite heatsink at TC = 25 °C. This rating assumes optimal thermal design using the DO-218AB metal heatsink terminal and is derated linearly above 25 °C case temperature per the power derating curve in Figure 1 of the SM5S11HE3/2D datasheet.
SM5S11HE3/2D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 20.1V
- Current - Peak Pulse (10/1000µs):
- 179A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM5S11HE3/2D FAQ
1.How can I place an order for SM5S11HE3/2D through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S11HE3/2D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S11HE3/2D reliable?
The price and inventory of SM5S11HE3/2D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S11HE3/2D is usually 5 days.
3.What payment methods are accepted for SM5S11HE3/2D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S11HE3/2D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S11HE3/2D?
SM5S11HE3/2D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S11HE3/2D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S11HE3/2D?
For technical support, including SM5S11HE3/2D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S11HE3/2D requirements.
6.How does Aetrix verify that SM5S11HE3/2D is sourced from the original manufacturer or authorized distributors?
All SM5S11HE3/2D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S11HE3/2D meets industry standards.
7.What is the process for return or replacement of SM5S11HE3/2D?
All SM5S11HE3/2D units undergo pre-shipment inspection (PSI). If there is an issue with SM5S11HE3/2D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S11HE3/2D part is unused and in its original packaging.
Return procedure for SM5S11HE3/2D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S11HE3/2D Tags
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