Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM5S12AHE3_A/I

Part No.:
SM5S12AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-218AB
Datasheet:
AetrixSM5S12AHE3_A/I.pdf
Description:
TVS DIODE 12VWM 19.9VC DO218AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,849

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM5S12AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 12 V stand-off voltage (VWM), 13.3–14.7 V breakdown (VBR), 3600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification for automotive load dump protection.

For engineers reviewing the SM5S12AHE3_A/I datasheet, SM5S12AHE3_A/I pinout, SM5S12AHE3_A/I application, or SM5S12AHE3_A/I equivalent, this device serves as a high-reliability, high-temperature (TJ = 175 °C) TVS diode optimized for inductive switching transients and ISO7637-2 compliance in engine control units and body electronics.

Technical Context

The SM5S12AHE3_A/I employs passivated anisotropic rectifier technology with junction passivation, enabling stable clamping performance up to 175 °C junction temperature. Its unidirectional polarity and heatsink-anode configuration support direct mounting to thermal planes in automotive power rails.

It delivers 181 V maximum clamping voltage at 150 A peak pulse current (10/1000 μs), with low leakage (<10 μA at VWM) and low forward voltage drop (<2.0 V at 100 A). Thermal resistance is 0.45 °C/W junction-to-mount, validated per JEDEC 51-14 TDIM.

Key Specifications

ParameterValue and Actual Design Meaning
VWM12 V - Maximum continuous reverse operating voltage before clamping begins
VBR (min/typ/max)13.3 / 14.0 / 14.7 V - Breakdown threshold range at 5 mA test current, defining turn-on precision
VC @ IPPM181 V - Clamping voltage at 150 A peak pulse, directly limiting downstream IC stress during load dump
PPPM (10/1000 μs)3600 W - Surge energy handling capacity under standard automotive transient waveform
TJ max.175 °C - Enables operation in under-hood environments without derating in most PCB layouts
IFSM500 A - Single half-sine surge rating (8.3 ms), supporting high-current inductive kick events
PolarityUnidirectional - Anode connected to heatsink; cathode is signal terminal for load dump suppression

Pinout & Package

Package: DO-218AB - Surface-mount molded case with metal heatsink tab (anode), matte tin-plated leads, UL 94 V-0 rated, MSL Level 1, JESD201 Class 2 whisker compliant.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Heatsink Tab)Power return path and thermal interfaceMust be soldered to large copper pour for RθJM = 0.45 °C/W; electrically connects to system ground or battery negative
Cathode (Lead 1)Transient voltage sensing and clamping nodeConnected to protected line (e.g., 12 V rail); conducts surge current to anode when V > VBR

Key Features

FeatureDesign Value
Junction passivated anisotropic rectifierEnables stable VBR drift <0.074 %/°C and low leakage (<10 μA at 12 V, 175 °C) over lifetime
AEC-Q101 qualificationValidated for automotive-grade reliability including HTGB, HTRB, and temperature cycling per stress test plan
DO-218AB thermal design0.45 °C/W junction-to-mount enables 3600 W surge dissipation without external heatsink in typical layouts
ISO7637-2 complianceMeets Pulse 5a (load dump) requirements when mounted per recommended footprint and layout guidelines

Applications

Engine Control Unit (ECU) Power InputBody Control Module (BCM) 12 V Rail

Use Scenario: Protects microcontroller, CAN transceivers, and sensor interfaces from alternator load dump transients during battery disconnect/reconnect events.

IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between battery feed and local DC/DC input, with anode tied to chassis ground.

Use Value: Limits transient voltage to ≤181 V at 150 A, preventing latch-up or gate oxide damage in downstream 3.3 V/5 V logic.

Use Scenario: Shields LIN bus transceivers, LED drivers, and EEPROM from inductive switching spikes generated by door lock actuators and window motors.

IC Role / Device Role / Timing Role: Standoff-clamp TVS on main 12 V distribution net upstream of local regulators, with heatsink tab thermally coupled to ground plane.

Use Value: Maintains <10 μA leakage at 12 V even at 175 °C, avoiding quiescent current violations in always-on modules.

Advanced Driver Assistance Systems (ADAS) Camera PowerElectric Power Steering (EPS) Motor Driver Stage

Use Scenario: Safeguards image sensor supply and serializer ICs against ignition noise and relay bounce in front-facing camera modules.

IC Role / Device Role / Timing Role: Fast-response unidirectional suppressor on 12 V input to PMIC, positioned adjacent to connector entry point.

Use Value: Achieves 10/1000 μs clamping within 1 ns response time, limiting overshoot to safe levels for 1.8 V analog front-end circuitry.

Use Scenario: Absorbs back-EMF energy from brushed or BLDC motor windings during PWM commutation in EPS control units.

IC Role / Device Role / Timing Role: High-surge-capability TVS across motor driver H-bridge supply rail, with anode connected to low-inductance ground plane.

Use Value: Withstands 500 A single-pulse IFSM, preventing destructive voltage reversal during sudden motor stall or direction change.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SM5S12AHM3Same electrical specs and DO-218AB package; HM3 suffix indicates halogen-free, RoHS-compliant, AEC-Q101 qualified variant with updated material contentNo functional difference; intended for new designs where HE3 is marked "Not For New Designs"Select SM5S12AHM3 for new automotive programs requiring latest Vishay material compliance and long-term availability
SMAJ12ALower PPPM (400 W vs. 3600 W), SMA package (RθJA = 60 °C/W), no AEC-Q101 qualification, 12 V VWM, unidirectionalSuitable only for low-energy transients (e.g., ESD, low-current switching); not for load dumpUse SMAJ12A only in non-automotive, non-load-dump applications with <100 W surge requirements and no high-temp reliability mandate

Compared with SM5S12AHE3_A/I, SM5S12AHM3 offers identical protection performance with updated environmental compliance for future designs, while SMAJ12A provides cost-effective ESD-level suppression but lacks the thermal robustness and surge capacity needed for automotive power rail protection.

Availability

SM5S12AHE3_A/I is available at Aetrix Electronics and suitable for automotive engine control, body electronics, ADAS camera power, and electric power steering systems requiring stable component supply under AEC-Q101 and ISO7637-2 compliance.

Supply support for SM5S12AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on automotive, industrial, and computing applications.

The SM5S series is designed specifically for high-energy automotive transient suppression, targeting load dump, inductive switching, and ISO7637-2 Pulse 5a compliance in under-hood and chassis-mounted ECUs.

FAQ

What is the maximum clamping voltage of the SM5S12AHE3_A/I at its rated peak pulse current?

The SM5S12AHE3_A/I has a maximum clamping voltage (VC) of 181 V at 150 A peak pulse current with a 10/1000 μs waveform. This value is measured per standard test conditions and defines the upper voltage limit imposed on protected circuitry during a defined surge event. The SM5S12AHE3_A/I maintains this clamping performance across its full operating temperature range up to 175 °C junction temperature.

Is the SM5S12AHE3_A/I suitable for new automotive designs?

No - the SM5S12AHE3_A/I is marked "Not For New Designs" in Vishay's official documentation, with SM5S12AHM3 designated as the recommended alternative. While SM5S12AHE3_A/I remains available for legacy program support and repair, new automotive designs should use SM5S12AHM3 to ensure long-term supply, updated material compliance (halogen-free), and alignment with Vishay's current qualification standards.

How is the anode terminal implemented in the SM5S12AHE3_A/I DO-218AB package?

In the SM5S12AHE3_A/I, the anode is the metal heatsink tab (bottom surface), not a lead. The cathode is Lead 1. This configuration requires the heatsink tab to be soldered to a large copper area serving as both thermal path and electrical return. The SM5S12AHE3_A/I datasheet explicitly states "Polarity: heatsink is anode", confirming that correct orientation places the tab toward system ground or battery negative.

Does the SM5S12AHE3_A/I meet ISO7637-2 Pulse 5a requirements?

Yes - the SM5S12AHE3_A/I is specified to meet ISO7637-2 surge requirements, including Pulse 5a (load dump), under defined test conditions. Compliance depends on proper PCB layout: adequate copper area for the anode heatsink, short traces, and placement near the protected line entry point. The 3600 W PPPM rating and 181 V clamping voltage enable it to handle the 12 V system load dump profile when applied per Vishay's recommended design practices.

What is the thermal resistance junction-to-mount (RθJM) for the SM5S12AHE3_A/I?

The SM5S12AHE3_A/I has a typical thermal resistance junction-to-mount (RθJM) of 0.45 °C/W, measured per JEDEC 51-14 using the Transient Dual Interface Method. This low value reflects the efficient thermal path from die to the metal heatsink tab, enabling high-power surge dissipation without external heatsinking when the tab is soldered to ≥1 in² of 2 oz. copper. The SM5S12AHE3_A/I achieves this performance while maintaining AEC-Q101 qualification.

SM5S12AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-218AB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
12V
Voltage - Breakdown (Min):
13.3V
Voltage - Clamping (Max) @ Ipp:
19.9V
Current - Peak Pulse (10/1000µs):
181A
Power - Peak Pulse:
3600W (3.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AB

SM5S12AHE3_A/I FAQ

1.How can I place an order for SM5S12AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SM5S12AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM5S12AHE3_A/I reliable?

The price and inventory of SM5S12AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S12AHE3_A/I is usually 5 days.

3.What payment methods are accepted for SM5S12AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S12AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM5S12AHE3_A/I?

SM5S12AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM5S12AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM5S12AHE3_A/I?

For technical support, including SM5S12AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S12AHE3_A/I requirements.

6.How does Aetrix verify that SM5S12AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All SM5S12AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S12AHE3_A/I meets industry standards.

7.What is the process for return or replacement of SM5S12AHE3_A/I?

All SM5S12AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM5S12AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM5S12AHE3_A/I part is unused and in its original packaging.

Return procedure for SM5S12AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM5S12AHE3_A/I Tags

  • SM5S12AHE3_A/I
  • SM5S12AHE3_A/I PDF
  • SM5S12AHE3_A/I Datasheet
  • SM5S12AHE3_A/I Specifications
  • SM5S12AHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM5S12AHE3_A/I
  • Buy SM5S12AHE3_A/I
  • SM5S12AHE3_A/I Price
  • SM5S12AHE3_A/I Distributor
  • SM5S12AHE3_A/I Supplier
  • SM5S12AHE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER