Vishay General Semiconductor - Diodes Division SM5S12AHE3_A/I
- Part No.:
- SM5S12AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM5S12AHE3_A/I.pdf
- Description:
- TVS DIODE 12VWM 19.9VC DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,849
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM5S12AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 12 V stand-off voltage (VWM), 13.3–14.7 V breakdown (VBR), 3600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification for automotive load dump protection.
For engineers reviewing the SM5S12AHE3_A/I datasheet, SM5S12AHE3_A/I pinout, SM5S12AHE3_A/I application, or SM5S12AHE3_A/I equivalent, this device serves as a high-reliability, high-temperature (TJ = 175 °C) TVS diode optimized for inductive switching transients and ISO7637-2 compliance in engine control units and body electronics.
Technical Context
The SM5S12AHE3_A/I employs passivated anisotropic rectifier technology with junction passivation, enabling stable clamping performance up to 175 °C junction temperature. Its unidirectional polarity and heatsink-anode configuration support direct mounting to thermal planes in automotive power rails.
It delivers 181 V maximum clamping voltage at 150 A peak pulse current (10/1000 μs), with low leakage (<10 μA at VWM) and low forward voltage drop (<2.0 V at 100 A). Thermal resistance is 0.45 °C/W junction-to-mount, validated per JEDEC 51-14 TDIM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12 V - Maximum continuous reverse operating voltage before clamping begins |
| VBR (min/typ/max) | 13.3 / 14.0 / 14.7 V - Breakdown threshold range at 5 mA test current, defining turn-on precision |
| VC @ IPPM | 181 V - Clamping voltage at 150 A peak pulse, directly limiting downstream IC stress during load dump |
| PPPM (10/1000 μs) | 3600 W - Surge energy handling capacity under standard automotive transient waveform |
| TJ max. | 175 °C - Enables operation in under-hood environments without derating in most PCB layouts |
| IFSM | 500 A - Single half-sine surge rating (8.3 ms), supporting high-current inductive kick events |
| Polarity | Unidirectional - Anode connected to heatsink; cathode is signal terminal for load dump suppression |
Pinout & Package
Package: DO-218AB - Surface-mount molded case with metal heatsink tab (anode), matte tin-plated leads, UL 94 V-0 rated, MSL Level 1, JESD201 Class 2 whisker compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink Tab) | Power return path and thermal interface | Must be soldered to large copper pour for RθJM = 0.45 °C/W; electrically connects to system ground or battery negative |
| Cathode (Lead 1) | Transient voltage sensing and clamping node | Connected to protected line (e.g., 12 V rail); conducts surge current to anode when V > VBR |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivated anisotropic rectifier | Enables stable VBR drift <0.074 %/°C and low leakage (<10 μA at 12 V, 175 °C) over lifetime |
| AEC-Q101 qualification | Validated for automotive-grade reliability including HTGB, HTRB, and temperature cycling per stress test plan |
| DO-218AB thermal design | 0.45 °C/W junction-to-mount enables 3600 W surge dissipation without external heatsink in typical layouts |
| ISO7637-2 compliance | Meets Pulse 5a (load dump) requirements when mounted per recommended footprint and layout guidelines |
Applications
| Engine Control Unit (ECU) Power Input | Body Control Module (BCM) 12 V Rail |
|---|---|
Use Scenario: Protects microcontroller, CAN transceivers, and sensor interfaces from alternator load dump transients during battery disconnect/reconnect events. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between battery feed and local DC/DC input, with anode tied to chassis ground. Use Value: Limits transient voltage to ≤181 V at 150 A, preventing latch-up or gate oxide damage in downstream 3.3 V/5 V logic. | Use Scenario: Shields LIN bus transceivers, LED drivers, and EEPROM from inductive switching spikes generated by door lock actuators and window motors. IC Role / Device Role / Timing Role: Standoff-clamp TVS on main 12 V distribution net upstream of local regulators, with heatsink tab thermally coupled to ground plane. Use Value: Maintains <10 μA leakage at 12 V even at 175 °C, avoiding quiescent current violations in always-on modules. |
| Advanced Driver Assistance Systems (ADAS) Camera Power | Electric Power Steering (EPS) Motor Driver Stage |
Use Scenario: Safeguards image sensor supply and serializer ICs against ignition noise and relay bounce in front-facing camera modules. IC Role / Device Role / Timing Role: Fast-response unidirectional suppressor on 12 V input to PMIC, positioned adjacent to connector entry point. Use Value: Achieves 10/1000 μs clamping within 1 ns response time, limiting overshoot to safe levels for 1.8 V analog front-end circuitry. | Use Scenario: Absorbs back-EMF energy from brushed or BLDC motor windings during PWM commutation in EPS control units. IC Role / Device Role / Timing Role: High-surge-capability TVS across motor driver H-bridge supply rail, with anode connected to low-inductance ground plane. Use Value: Withstands 500 A single-pulse IFSM, preventing destructive voltage reversal during sudden motor stall or direction change. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM5S12AHM3 | Same electrical specs and DO-218AB package; HM3 suffix indicates halogen-free, RoHS-compliant, AEC-Q101 qualified variant with updated material content | No functional difference; intended for new designs where HE3 is marked "Not For New Designs" | Select SM5S12AHM3 for new automotive programs requiring latest Vishay material compliance and long-term availability |
| SMAJ12A | Lower PPPM (400 W vs. 3600 W), SMA package (RθJA = 60 °C/W), no AEC-Q101 qualification, 12 V VWM, unidirectional | Suitable only for low-energy transients (e.g., ESD, low-current switching); not for load dump | Use SMAJ12A only in non-automotive, non-load-dump applications with <100 W surge requirements and no high-temp reliability mandate |
Compared with SM5S12AHE3_A/I, SM5S12AHM3 offers identical protection performance with updated environmental compliance for future designs, while SMAJ12A provides cost-effective ESD-level suppression but lacks the thermal robustness and surge capacity needed for automotive power rail protection.
Availability
SM5S12AHE3_A/I is available at Aetrix Electronics and suitable for automotive engine control, body electronics, ADAS camera power, and electric power steering systems requiring stable component supply under AEC-Q101 and ISO7637-2 compliance.
Supply support for SM5S12AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on automotive, industrial, and computing applications.
The SM5S series is designed specifically for high-energy automotive transient suppression, targeting load dump, inductive switching, and ISO7637-2 Pulse 5a compliance in under-hood and chassis-mounted ECUs.
FAQ
What is the maximum clamping voltage of the SM5S12AHE3_A/I at its rated peak pulse current?
The SM5S12AHE3_A/I has a maximum clamping voltage (VC) of 181 V at 150 A peak pulse current with a 10/1000 μs waveform. This value is measured per standard test conditions and defines the upper voltage limit imposed on protected circuitry during a defined surge event. The SM5S12AHE3_A/I maintains this clamping performance across its full operating temperature range up to 175 °C junction temperature.
Is the SM5S12AHE3_A/I suitable for new automotive designs?
No - the SM5S12AHE3_A/I is marked "Not For New Designs" in Vishay's official documentation, with SM5S12AHM3 designated as the recommended alternative. While SM5S12AHE3_A/I remains available for legacy program support and repair, new automotive designs should use SM5S12AHM3 to ensure long-term supply, updated material compliance (halogen-free), and alignment with Vishay's current qualification standards.
How is the anode terminal implemented in the SM5S12AHE3_A/I DO-218AB package?
In the SM5S12AHE3_A/I, the anode is the metal heatsink tab (bottom surface), not a lead. The cathode is Lead 1. This configuration requires the heatsink tab to be soldered to a large copper area serving as both thermal path and electrical return. The SM5S12AHE3_A/I datasheet explicitly states "Polarity: heatsink is anode", confirming that correct orientation places the tab toward system ground or battery negative.
Does the SM5S12AHE3_A/I meet ISO7637-2 Pulse 5a requirements?
Yes - the SM5S12AHE3_A/I is specified to meet ISO7637-2 surge requirements, including Pulse 5a (load dump), under defined test conditions. Compliance depends on proper PCB layout: adequate copper area for the anode heatsink, short traces, and placement near the protected line entry point. The 3600 W PPPM rating and 181 V clamping voltage enable it to handle the 12 V system load dump profile when applied per Vishay's recommended design practices.
What is the thermal resistance junction-to-mount (RθJM) for the SM5S12AHE3_A/I?
The SM5S12AHE3_A/I has a typical thermal resistance junction-to-mount (RθJM) of 0.45 °C/W, measured per JEDEC 51-14 using the Transient Dual Interface Method. This low value reflects the efficient thermal path from die to the metal heatsink tab, enabling high-power surge dissipation without external heatsinking when the tab is soldered to ≥1 in² of 2 oz. copper. The SM5S12AHE3_A/I achieves this performance while maintaining AEC-Q101 qualification.
SM5S12AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 181A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM5S12AHE3_A/I FAQ
1.How can I place an order for SM5S12AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S12AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S12AHE3_A/I reliable?
The price and inventory of SM5S12AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S12AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM5S12AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S12AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S12AHE3_A/I?
SM5S12AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S12AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S12AHE3_A/I?
For technical support, including SM5S12AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S12AHE3_A/I requirements.
6.How does Aetrix verify that SM5S12AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM5S12AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S12AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM5S12AHE3_A/I?
All SM5S12AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM5S12AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S12AHE3_A/I part is unused and in its original packaging.
Return procedure for SM5S12AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S12AHE3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

