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Vishay General Semiconductor - Diodes Division SM5S12ATHE3/I
- Part No.:
- SM5S12ATHE3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AC
- Datasheet:
-
SM5S12ATHE3/I.pdf
- Description:
- TVS DIODE 12VWM 19.9VC DO218AC
- Quantity:
- Payment:
- Shipping:
Inventory:2,999
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Product details
Overview
SM5S12ATHE3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection in high-reliability 12 V systems. It features a 12.0 V stand-off voltage (VWM), 14.0 V nominal breakdown voltage (VBR), 19.9 V maximum clamping voltage at 150 A, 3600 W peak pulse power (10/1000 μs), and operates up to TJ = 175 °C.
For engineers reviewing the SM5S12ATHE3/I datasheet, SM5S12ATHE3/I pinout, SM5S12ATHE3/I application, or SM5S12ATHE3/I equivalent, this device serves as a high-surge-capability, AEC-Q101-qualified TVS for under-hood electronics requiring stable clamping performance across extended temperature and repetitive surge conditions.
Technical Context
The SM5S12ATHE3/I employs passivated anisotropic rectifier technology to achieve low leakage (<10 μA at VWM) and low forward voltage drop (<2.0 V at 100 A), enabling efficient transient suppression without compromising system efficiency during normal operation. Its DO-218AC package integrates a metal heatsink as the anode terminal, supporting direct thermal coupling to PCB copper for enhanced power dissipation.
It meets ISO 7637-2 load dump surge requirements under defined test conditions and complies with MSL Level 1 per J-STD-020 (peak reflow ≤245 °C). The device's 0.074 %/°C temperature coefficient of VBR ensures predictable breakdown voltage drift over its -55 °C to +175 °C operating junction range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12.0 V - Maximum continuous reverse working voltage before significant conduction begins; sets system operating margin for 12 V nominal bus. |
| VBR (nom) | 14.0 V - Breakdown voltage at 5 mA test current; defines onset of avalanche clamping behavior. |
| VC @ IPPM | 19.9 V - Clamping voltage at 150 A peak pulse current (10/1000 μs); determines worst-case voltage seen by protected ICs. |
| PPPM (10/1000 μs) | 3600 W - Peak pulse power handling capability; supports high-energy automotive transients like load dump. |
| TJ max | +175 °C - Maximum junction temperature rating; enables placement near hot engine compartments without derating. |
| RθJC | 1.0 °C/W - Junction-to-case thermal resistance; allows accurate thermal design when mounted on heatsinked PCB copper. |
| Polarity | Unidirectional - Anode connected to ground, cathode to line; protects against positive-going transients only. |
Pinout & Package
Package: DO-218AC - Surface-mount, thermally enhanced case with integral metal heatsink (anode terminal) and matte tin-plated leads compliant with J-STD-002 and JESD 22-B102. Meets UL 94 V-0 flammability rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Current return path and thermal interface | Electrically connected to metal base; must be soldered to large copper pour for effective heat transfer and low-inductance grounding. |
| Cathode (Lead 1) | Transient voltage sensing and clamping node | Connected to protected line (e.g., battery rail); conducts surge current to anode when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation optimized design | Enables stable leakage performance (<10 μA at VWM) and long-term reliability under high-temperature bias stress. |
| TJ = 175 °C operation | Supports under-hood deployment in automotive ECUs without external cooling or derating penalties. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including HTOL, TC, HAST, and ESD testing per stress test plan. |
| ISO 7637-2 compliance | Meets standardized load dump surge immunity requirements for 12 V vehicle electrical systems. |
| MSL Level 1 rating | Allows single-pass reflow at 245 °C peak without popcorn or delamination risk. |
Applications
| Engine Control Unit (ECU) Power Input Protection | Body Control Module (BCM) Battery Rail Protection |
|---|---|
Use Scenario: Protects microcontroller power rails from 12 V battery line transients caused by alternator load dump events. IC Role / Device Role / Timing Role: Unidirectional TVS clamps positive surges above ~14 V to limit downstream voltage to ≤19.9 V. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V regulators and CAN transceivers during ISO 7637-2 Pulse 5a events. |
Use Scenario: Shields BCM power supply from switching noise and load dump spikes generated by high-current solenoids and lighting loads. IC Role / Device Role / Timing Role: Fast-response avalanche diode that activates within nanoseconds to clamp transient energy into chassis ground. Use Value: Maintains functional safety integrity by limiting voltage excursions below 20 V during 3600 W peak surges. |
| Automotive Infotainment Head Unit Power Supply | ADAS Camera Module Power Line Protection |
Use Scenario: Guards USB-C PD and display power inputs against battery line disturbances during ignition cycling and accessory load switching. IC Role / Device Role / Timing Role: Standoff-rated TVS placed upstream of DC/DC converters to absorb repetitive low-energy transients. Use Value: Reduces need for oversized input capacitors and improves long-term stability of LDOs under thermal cycling. |
Use Scenario: Safeguards 12 V input to image sensor power management ICs in rear-view and surround-view cameras exposed to engine bay EMI. IC Role / Device Role / Timing Role: High-temperature-stable clamping element integrated into compact DO-218AC footprint for space-constrained modules. Use Value: Enables reliable operation at +105 °C ambient with <10 μA leakage at 12 V, minimizing standby power loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM5S12AHM3 | Same VWM/VBR/VC specs but uses HM3 suffix indicating halogen-free molding compound and updated wafer process; identical DO-218AC package and pinout. | Preferred for new designs targeting RoHS+halogen-free compliance; not recommended for legacy qualification-critical programs using HE3. | Select SM5S12AHM3 for new automotive designs requiring halogen-free materials; SM5S12ATHE3/I remains valid for HE3-specified builds. |
| SMAJ12A | Lower PPPM (400 W vs. 3600 W), smaller SMA package (RθJC ≈ 50 °C/W), no AEC-Q101 qualification, higher VC (20.1 V). | Suitable for non-automotive industrial or consumer applications with lower surge energy requirements. | Use SMAJ12A only where ISO 7637-2 compliance and 175 °C operation are not required; insufficient for load dump protection. |
Compared with SM5S12AHM3, the SM5S12ATHE3/I offers identical electrical performance but differs in material compliance and qualification status; compared with SMAJ12A, it delivers >9× higher surge power, superior thermal performance, and automotive-grade reliability-making it irreplaceable for under-hood load dump protection.
Availability
SM5S12ATHE3/I is available at Aetrix Electronics and suitable for automotive ECU power protection, body control module surge suppression, and ADAS camera module input conditioning requiring stable component supply across extended temperature and high-reliability production cycles.
Supply support for SM5S12ATHE3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The SM5S series was developed specifically for automotive load dump protection, combining high-temperature silicon design, robust packaging, and AEC-Q101 validation to meet stringent OEM transient immunity requirements.
FAQ
What is the maximum clamping voltage of the SM5S12ATHE3/I at rated surge current?
The SM5S12ATHE3/I has a maximum clamping voltage (VC) of 19.9 V at 150 A peak pulse current with a 10/1000 μs waveform. This value is measured per standard test conditions and defines the upper voltage limit imposed on protected circuitry during a full-power transient event. The SM5S12ATHE3/I maintains this clamping performance consistently across its specified temperature range.
Is the SM5S12ATHE3/I qualified for automotive applications?
Yes, the SM5S12ATHE3/I is AEC-Q101 qualified and carries the HE3 suffix denoting RoHS-compliant, whisker-tested construction meeting JESD 201 Class 2 requirements. It is explicitly intended for automotive use, including engine control units and body electronics subject to ISO 7637-2 load dump testing. The SM5S12ATHE3/I is not recommended for new designs per Vishay's notice, but remains fully supported for existing qualified programs.
What does the HE3 suffix indicate on the SM5S12ATHE3/I part number?
The HE3 suffix on SM5S12ATHE3/I specifies RoHS-compliant materials, AEC-Q101 qualification, and compliance with JESD 201 Class 2 whisker resistance testing. It also denotes packaging in 13-inch plastic tape and reel with anode orientation toward sprocket holes. The HE3 variant is distinct from HM3, which adds halogen-free compound but shares identical electrical specifications with SM5S12ATHE3/I.
Can the SM5S12ATHE3/I replace the SMAJ12A in an existing design?
No, the SM5S12ATHE3/I is not a drop-in replacement for SMAJ12A due to differences in package (DO-218AC vs. SMA), thermal performance (RθJC = 1.0 °C/W vs. ~50 °C/W), and surge rating (3600 W vs. 400 W). While both have similar VWM and VBR, the SM5S12ATHE3/I requires different PCB layout, thermal pad design, and surge test validation. Direct substitution without redesign is not advised.
What is the thermal resistance junction-to-case for the SM5S12ATHE3/I?
The SM5S12ATHE3/I has a typical junction-to-case thermal resistance (RθJC) of 1.0 °C/W, measured from die to the metal heatsink (anode terminal). This low value enables effective heat transfer when the anode is soldered to a large copper area, allowing sustained power dissipation up to 5 W on an infinite heatsink at TC = 25 °C. Accurate thermal modeling of the SM5S12ATHE3/I requires inclusion of this parameter in PCB stack-up calculations.
SM5S12ATHE3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 181A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AC
SM5S12ATHE3/I FAQ
1.How can I place an order for SM5S12ATHE3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S12ATHE3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S12ATHE3/I reliable?
The price and inventory of SM5S12ATHE3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S12ATHE3/I is usually 5 days.
3.What payment methods are accepted for SM5S12ATHE3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S12ATHE3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S12ATHE3/I?
SM5S12ATHE3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S12ATHE3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S12ATHE3/I?
For technical support, including SM5S12ATHE3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S12ATHE3/I requirements.
6.How does Aetrix verify that SM5S12ATHE3/I is sourced from the original manufacturer or authorized distributors?
All SM5S12ATHE3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S12ATHE3/I meets industry standards.
7.What is the process for return or replacement of SM5S12ATHE3/I?
All SM5S12ATHE3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM5S12ATHE3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S12ATHE3/I part is unused and in its original packaging.
Return procedure for SM5S12ATHE3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S12ATHE3/I Tags
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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