Vishay General Semiconductor - Diodes Division SM5S13AHE3_A/I
- Part No.:
- SM5S13AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM5S13AHE3_A/I.pdf
- Description:
- TVS DIODE 13VWM 21.5VC DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:8,220
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Product details
Overview
SM5S13AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 13 V stand-off voltage (VWM), 15.2 V nominal breakdown voltage (VBR), 3600 W peak pulse power (10/1000 μs), 167 V clamping voltage at 150 A, and AEC-Q101 qualification for under-hood applications.
For engineers reviewing the SM5S13AHE3_A/I datasheet, SM5S13AHE3_A/I pinout, SM5S13AHE3_A/I application, or SM5S13AHE3_A/I equivalent, key selection criteria include unidirectional polarity, DO-218AB package thermal performance (RθJM = 0.45 °C/W), TJ = 175 °C operation, ISO7637-2 compliance, and low leakage (<10 μA at VWM).
Technical Context
This TVS diode employs passivated anisotropic rectifier technology with junction passivation optimized for high-reliability automotive environments. Its unidirectional configuration and heatsink-anode polarity enable direct integration into 12 V battery rail protection circuits where reverse conduction must be blocked.
The device delivers 3600 W surge capability under 10/1000 μs waveform while maintaining clamping voltage ≤21.5 V at rated IPPM. Thermal design leverages low junction-to-mount resistance (0.45 °C/W) and MSL Level 1 moisture sensitivity rating for robust reflow compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 13.0 V - Maximum continuous reverse operating voltage before breakdown; sets threshold for load dump clamping in 12 V systems. |
| VBR (nom) | 15.2 V - Breakdown voltage at 5 mA test current; defines onset of avalanche conduction during transients. |
| VC @ IPPM | 167 V - Clamping voltage at 150 A peak pulse current; determines maximum voltage seen by protected downstream ICs. |
| PPPM (10/1000 μs) | 3600 W - Peak pulse power handling; enables survival of severe ISO7637-2 Load Dump pulses without failure. |
| TJ max | 175 °C - Maximum junction temperature; supports under-hood placement near engines with no derating up to ambient 125 °C. |
| RθJM | 0.45 °C/W - Junction-to-mount thermal resistance; allows efficient heat transfer to PCB copper pour or metal heatsink. |
| Polarity | Unidirectional - Anode connected to heatsink; blocks reverse current while clamping positive transients on supply rail. |
Pinout & Package
Package: DO-218AB - Surface-mount molded case with integral metal heatsink (anode terminal), UL 94 V-0 rated, RoHS-compliant, matte tin-plated leads, JESD201 Class 2 whisker resistant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (Anode) | Anode connection | Electrically tied to metal heatsink; must be connected to system ground or low-impedance return path for effective clamping. |
| Lead 2 (Cathode) | Cathode connection | Connected to protected supply rail (e.g., battery+); conducts avalanche current during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per stress test requirements. |
| ISO7637-2 compliant | Meets Pulse 5a/b load dump test profiles for 12 V systems, enabling use without additional external filtering. |
| MSL Level 1 | Rated for peak reflow temperatures up to 245 °C with unlimited floor life; eliminates baking requirements prior to assembly. |
| Junction passivation | Optimized die surface treatment reduces leakage drift and improves long-term stability at 175 °C junction temperature. |
| Low VF at high IF | Max 2.0 V forward voltage at 100 A pulse ensures minimal conduction loss during high-current surge events. |
Applications
| Automotive Battery Rail Protection | Engine Control Unit (ECU) Input Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed circuits against load dump transients during alternator regulation failure. IC Role / Device Role / Timing Role: Primary clamping element placed between battery+ and downstream DC/DC converters or microcontrollers. Use Value: Limits transient voltage to ≤167 V at 150 A, preventing damage to 36 V-rated input stages in power management ICs. |
Use Scenario: Safeguarding ECU power inputs exposed to switching noise from fuel injectors, solenoids, and relays. IC Role / Device Role / Timing Role: Fast-response shunt suppressor absorbing inductive kickback energy before it reaches sensitive analog front-ends. Use Value: 10/1000 μs response time and 3600 W rating ensure reliable suppression of repetitive 100–500 V spikes without degradation. |
| Body Control Module (BCM) Power Inputs | ADAS Camera Power Supply Protection |
Use Scenario: Securing BCM 12 V inputs subject to cranking transients and relay-induced surges in vehicle door modules. IC Role / Device Role / Timing Role: Unidirectional TVS mounted directly at connector entry point to minimize inductance in clamping path. Use Value: DO-218AB package's low RθJM (0.45 °C/W) sustains repeated 100 A pulses without thermal runaway in confined chassis spaces. |
Use Scenario: Shielding 12 V camera power rails in rearview or surround-view systems from ignition noise and ESD events. IC Role / Device Role / Timing Role: First-line transient suppressor upstream of LDO regulators feeding image sensors and SerDes ICs. Use Value: <10 μA leakage at 13 V VWM prevents quiescent current increase in always-on camera subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM5S13AHM3 | Same electrical specs and DO-218AB package; HM3 suffix indicates halogen-free, Pb-free, and AEC-Q101 qualified with enhanced whisker resistance (JESD201 Class 2). | Identical functional role; preferred for new designs requiring halogen-free compliance beyond RoHS. | Select SM5S13AHM3 for new automotive programs where halogen-free material declaration is mandatory per OEM specifications. |
| SMAJ13A | Lower PPPM (400 W), SMA package (RθJA ≈ 60 °C/W), same VWM/VBR but higher VC (21.5 V vs. 167 V at rated IPPM), not AEC-Q101 qualified. | Limited to non-automotive industrial or consumer applications with lower surge severity and less stringent reliability requirements. | Use SMAJ13A only in cost-sensitive, non-automotive applications where 3600 W surge immunity and 175 °C operation are not required. |
Compared with SM5S13AHE3_A/I, SM5S13AHM3 offers identical protection performance with upgraded environmental compliance, while SMAJ13A provides basic clamping at significantly reduced surge capacity and thermal robustness-making it unsuitable for automotive load dump duty.
Availability
SM5S13AHE3_A/I is available at Aetrix Electronics and suitable for automotive battery rail protection, engine control unit (ECU) input safeguarding, and body control module (BCM) power conditioning requiring stable component supply across extended production lifecycles.
Supply support for SM5S13AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM5SxxA series is part of Vishay's PAR® TVS platform engineered specifically for high-energy automotive load dump protection, combining high-temperature operation, AEC-Q101 validation, and industry-leading surge power density in the DO-218AB package.
FAQ
What is the clamping voltage of SM5S13AHE3_A/I at its rated peak pulse current?
The SM5S13AHE3_A/I has a maximum clamping voltage (VC) of 167 V when subjected to its rated peak pulse current (IPPM) of 150 A under the 10/1000 μs waveform. This value is measured per the conditions specified in the Vishay datasheet document 88382 and defines the upper voltage limit imposed on protected circuitry during worst-case transients. The SM5S13AHE3_A/I maintains this clamping performance across its full operating temperature range.
Is SM5S13AHE3_A/I suitable for new automotive designs?
No-SM5S13AHE3_A/I is marked "Not For New Designs" in the Vishay datasheet, with SM5S13AHM3 recommended as the designated replacement. The SM5S13AHE3_A/I remains available for legacy program support and existing production, but new designs should specify SM5S13AHM3 to ensure long-term supply, halogen-free compliance, and updated manufacturing qualifications. The SM5S13AHE3_A/I retains full AEC-Q101 qualification and identical electrical performance.
What does the HE3 suffix indicate in SM5S13AHE3_A/I?
The HE3 suffix in SM5S13AHE3_A/I denotes RoHS-compliant construction (lead-free terminations), AEC-Q101 qualification, and compliance with JESD201 Class 2 whisker resistance testing. The "E3" portion specifically confirms non-halogen-free, Pb-free materials meeting JEDEC standards, while "H" indicates automotive-grade qualification. This distinguishes it from industry-grade variants lacking AEC-Q101 validation.
How is polarity configured in SM5S13AHE3_A/I, and why does it matter for layout?
The SM5S13AHE3_A/I is unidirectional with the metal heatsink serving as the anode terminal (Lead 1), and the cathode (Lead 2) connected to the protected supply line. This configuration requires the heatsink/anode to be routed to system ground or low-impedance return, ensuring proper current path during clamping. Incorrect polarity reversal would prevent avalanche conduction and leave downstream circuitry unprotected.
What thermal metrics define the mounting requirements for SM5S13AHE3_A/I?
The SM5S13AHE3_A/I specifies RθJM = 0.45 °C/W (junction-to-mount) and RθJA = 55 °C/W (junction-to-ambient). Effective thermal design requires direct thermal coupling of the metal heatsink (anode) to a large copper pour or external heatsink; the 0.45 °C/W value assumes optimal mounting per JEDEC 51-14 TDIM methodology. Ambient derating follows Fig. 2 in datasheet 88382, with full 5 W dissipation only at TA ≤ 25 °C.
SM5S13AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 14.4V
- Voltage - Clamping (Max) @ Ipp:
- 21.5V
- Current - Peak Pulse (10/1000µs):
- 167A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM5S13AHE3_A/I FAQ
1.How can I place an order for SM5S13AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S13AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S13AHE3_A/I reliable?
The price and inventory of SM5S13AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S13AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM5S13AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S13AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S13AHE3_A/I?
SM5S13AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S13AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S13AHE3_A/I?
For technical support, including SM5S13AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S13AHE3_A/I requirements.
6.How does Aetrix verify that SM5S13AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM5S13AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S13AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM5S13AHE3_A/I?
All SM5S13AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM5S13AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S13AHE3_A/I part is unused and in its original packaging.
Return procedure for SM5S13AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S13AHE3_A/I Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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