Vishay General Semiconductor - Diodes Division SM5S16HE3/2D
- Part No.:
- SM5S16HE3/2D
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM5S16HE3/2D.pdf
- Description:
- TVS DIODE 16VWM 28.8VC DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,866
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM5S16HE3/2D from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor diode in DO-218AB package, rated for 16 V stand-off voltage (VWM), 17.8–21.8 V breakdown (VBR), 28.8 V clamping at 125 A peak pulse current, 3600 W peak pulse power (10/1000 µs), and 175 °C junction temperature-designed for automotive load dump protection in engine control units and battery management systems.
For engineers reviewing the SM5S16HE3/2D datasheet, SM5S16HE3/2D pinout, SM5S16HE3/2D application, or SM5S16HE3/2D equivalent, key selection criteria include unidirectional polarity, DO-218AB thermal performance (RθJC = 1.0 °C/W), AEC-Q101 qualification, ISO7637-2 compliance, and 175 °C high-temperature operation under sustained load conditions.
Technical Context
The SM5S16HE3/2D operates as a unidirectional avalanche diode with passivated anisotropic rectifier technology, enabling stable clamping during high-energy transients. Its junction-to-case thermal resistance of 1.0 °C/W supports direct heatsink mounting via the metal cathode tab, and its 175 °C maximum junction temperature ensures reliability in under-hood automotive environments.
It delivers 3600 W peak pulse power (10/1000 µs) and 2800 W (10/10 000 µs), with clamping voltage tightly specified at 28.8 V at 125 A. The device meets MSL Level 1 per J-STD-020 and passes JESD201 Class 2 whisker testing, confirming robustness for automated SMT assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 16.0 V - Maximum continuous reverse operating voltage before conduction begins |
| VBR (min/max) | 17.8 V / 21.8 V - Breakdown voltage range at 5 mA test current; defines turn-on threshold consistency |
| VC @ IPPM | 28.8 V - Clamping voltage at 125 A peak pulse current; determines protected circuit voltage ceiling |
| PPPM (10/1000 µs) | 3600 W - Peak surge power handling capability; critical for ISO7637-2 load dump immunity |
| TJ max. | +175 °C - Maximum junction temperature; enables placement near hot engine components |
| Polarity | Unidirectional - Anode connected to heatsink; blocks reverse voltage until breakdown, conducts forward like rectifier |
| RθJC | 1.0 °C/W - Thermal resistance from junction to case; allows accurate thermal design when mounted to heatsink |
Pinout & Package
Package: DO-218AB - Surface-mount, single-ended, metal-cathode heatsink package with matte tin-plated leads; anode terminal is lead 1, cathode/heatsink is lead 2/metal tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Anode | Connected to protected line (e.g., battery rail); current flows into device during clamping |
| Lead 2 / Metal Heatsink Tab | Cathode | Primary thermal path and electrical return; must be soldered to copper pour or heatsink for thermal and electrical integrity |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier technology ensures stable VBR over lifetime and temperature cycling |
| AEC-Q101 qualification | Validated for automotive-grade reliability including HTOL, TC, and HAST testing per stress requirements |
| ISO7637-2 compliance | Meets load dump surge immunity up to 35 V, 100 ms exponential waveform per automotive standard |
| MSL Level 1 rating | Reflow-compatible up to 245 °C peak without moisture-induced damage |
| JESD201 Class 2 whisker resistance | Prevents tin whisker growth under thermal/humidity stress, ensuring long-term solder joint integrity |
Applications
| Engine Control Unit (ECU) Power Input Protection | Automotive Battery Management System (BMS) |
|---|---|
Use Scenario: Protects ECU microcontroller and CAN transceivers from 12 V battery rail transients caused by alternator load dump and inductive switching. IC Role / Device Role / Timing Role: Unidirectional TVS diode clamps surge energy to ≤28.8 V while diverting >125 A away from downstream ICs. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V logic supplies and communication interfaces during ISO7637-2 Pulse 5a events. | Use Scenario: Shields BMS analog front-end (AFE) and cell monitoring ICs from voltage spikes during battery disconnect/reconnect and relay switching. IC Role / Device Role / Timing Role: Fast-response avalanche diode absorbs 3600 W surges within nanoseconds, maintaining safe bus voltage during fault conditions. Use Value: Enables reliable cell voltage measurement accuracy and prevents false overvoltage trips in high-voltage EV/HEV battery packs. |
| Start-Stop System Voltage Regulator Protection | Automotive Lighting Module Driver Circuit |
Use Scenario: Safeguards start-stop system DC/DC converters and MOSFET gate drivers from repeated low-energy transients during frequent engine restarts. IC Role / Device Role / Timing Role: Unidirectional clamping device with low leakage (<10 µA at 16 V) minimizes quiescent current drain in always-on circuits. Use Value: Extends battery life and maintains system readiness across 100,000+ stop-start cycles without degradation. | Use Scenario: Protects LED driver ICs and current-sense resistors in headlamp modules from inductive kickback generated by high-current LED string switching. IC Role / Device Role / Timing Role: DO-218AB package provides low-inductance path to heatsink, enabling sub-100 ns response to fast-rising transients. Use Value: Eliminates LED flicker and driver IC failure during PWM dimming and thermal cycling in ambient temperatures up to +125 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ16A-E3/5AT | DO-214AC package; lower PPPM (400 W); VBR = 17.8–19.7 V; RθJC ≈ 50 °C/W | Limited to low-energy transients; unsuitable for ISO7637-2 load dump | Select only for non-automotive, low-power board-level ESD where thermal mass is insufficient for DO-218AB mounting |
| SMCJ16AHE3_A/H | DO-214AB package; PPPM = 1500 W; VBR = 17.8–19.7 V; TJ max. = 150 °C | Lower surge rating and temperature limit; not AEC-Q101 qualified | Acceptable for industrial power supplies requiring basic IEC61000-4-5 protection but not automotive qualification |
Compared with SMAJ16A-E3/5AT and SMCJ16AHE3_A/H, the SM5S16HE3/2D delivers 2.4× higher peak power, 25 °C higher junction rating, and certified AEC-Q101 reliability-making it the only option among the three qualified for under-hood automotive load dump protection with direct heatsink coupling.
Availability
SM5S16HE3/2D is available at Aetrix Electronics and suitable for automotive electronics, battery management systems, and engine control units requiring stable component supply, AEC-Q101 compliance, and high-temperature surge resilience.
Supply support for SM5S16HE3/2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on automotive, industrial, and computing applications.
The SM5S series is designed specifically for high-reliability automotive transient suppression, combining DO-218AB thermal efficiency, AEC-Q101 validation, and ISO7637-2 compliance to meet stringent under-hood environmental demands.
FAQ
What is the clamping voltage of the SM5S16HE3/2D at its rated peak pulse current?
The SM5S16HE3/2D has a maximum clamping voltage (VC) of 28.8 V at 125 A peak pulse current (IPPM) under 10/1000 µs waveform conditions. This value is measured per the datasheet's electrical characteristics table and defines the upper voltage limit imposed on protected circuitry during surge events. The SM5S16HE3/2D maintains this clamping performance across its full operating temperature range, supporting robust design margin for 12 V automotive systems.
Is the SM5S16HE3/2D qualified for automotive applications?
Yes, the SM5S16HE3/2D is AEC-Q101 qualified and explicitly designed for automotive use. It meets ISO7637-2 load dump requirements, operates up to +175 °C junction temperature, and passes JESD201 Class 2 whisker testing and MSL Level 1 reflow standards. These qualifications are documented in Vishay's official datasheet 88382 and confirm the SM5S16HE3/2D's suitability for engine control units, battery management systems, and other under-hood automotive electronics.
What does the "HE3/2D" suffix indicate in SM5S16HE3/2D?
The "HE3" suffix denotes RoHS-compliant, AEC-Q101-qualified construction with matte tin-plated leads and JESD201 Class 2 whisker resistance. The "/2D" indicates packaging in 13-inch plastic tape and reel, with 750 units per reel and anode orientation toward the sprocket hole. This packaging format ensures compatibility with high-speed pick-and-place equipment and supports automated SMT assembly of the SM5S16HE3/2D in volume production.
How does the DO-218AB package of the SM5S16HE3/2D improve thermal performance compared to DO-214AB?
The DO-218AB package of the SM5S16HE3/2D features an integrated metal heatsink tab that reduces junction-to-case thermal resistance to 1.0 °C/W-approximately 5× lower than typical DO-214AB packages (~50 °C/W). This enables efficient heat transfer directly to PCB copper pours or external heatsinks, sustaining higher surge duty cycles and improving long-term reliability in high-temperature automotive environments where the SM5S16HE3/2D is deployed.
Can the SM5S16HE3/2D be used in bidirectional protection circuits?
No, the SM5S16HE3/2D is unidirectional only, with polarity defined as anode (lead 1) and cathode/heatsink (lead 2). It blocks reverse voltage up to 16 V and clamps positive transients on the anode side. For bidirectional protection, a separate device such as the SMBJ16CA or a back-to-back SM5S16HE3/2D configuration would be required-but the SM5S16HE3/2D itself does not provide symmetrical clamping behavior.
SM5S16HE3/2D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 16V
- Voltage - Breakdown (Min):
- 17.8V
- Voltage - Clamping (Max) @ Ipp:
- 28.8V
- Current - Peak Pulse (10/1000µs):
- 125A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM5S16HE3/2D FAQ
1.How can I place an order for SM5S16HE3/2D through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S16HE3/2D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S16HE3/2D reliable?
The price and inventory of SM5S16HE3/2D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S16HE3/2D is usually 5 days.
3.What payment methods are accepted for SM5S16HE3/2D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S16HE3/2D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S16HE3/2D?
SM5S16HE3/2D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S16HE3/2D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S16HE3/2D?
For technical support, including SM5S16HE3/2D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S16HE3/2D requirements.
6.How does Aetrix verify that SM5S16HE3/2D is sourced from the original manufacturer or authorized distributors?
All SM5S16HE3/2D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S16HE3/2D meets industry standards.
7.What is the process for return or replacement of SM5S16HE3/2D?
All SM5S16HE3/2D units undergo pre-shipment inspection (PSI). If there is an issue with SM5S16HE3/2D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S16HE3/2D part is unused and in its original packaging.
Return procedure for SM5S16HE3/2D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S16HE3/2D Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

