Vishay General Semiconductor - Diodes Division SM5S24HE3/2D
- Part No.:
- SM5S24HE3/2D
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM5S24HE3/2D.pdf
- Description:
- TVS DIODE 24VWM 43VC DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:5,623
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM5S24HE3/2D from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection in high-reliability 24 V systems. It features a 24.0 V stand-off voltage (VWM), 26.7–32.6 V breakdown range (VBR), 43.0 V clamping voltage at 84 A peak pulse current, 3600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification for under-hood applications.
For engineers reviewing the SM5S24HE3/2D datasheet, SM5S24HE3/2D pinout, SM5S24HE3/2D application, or SM5S24HE3/2D equivalent, key selection criteria include its DO-218AB package thermal performance (RθJC = 1.0 °C/W), 175 °C junction rating, uni-directional polarity with heatsink-as-anode configuration, and compliance with ISO7637-2 load dump waveforms.
Technical Context
The SM5S24HE3/2D employs passivated anisotropic rectifier technology optimized for high-temperature stability and low leakage (<10 μA at VWM, 25 °C). Its junction-to-case thermal resistance of 1.0 °C/W enables effective heat transfer to a heatsink, supporting sustained operation up to TJ = 175 °C.
It delivers 3600 W surge capability under 10/1000 μs waveform and meets ISO7637-2 test conditions for automotive transients. The device is rated for 500 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine) and exhibits VF ≤ 2.0 V at 100 A, ensuring low conduction loss during clamping events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 24.0 V - Maximum continuous reverse operating voltage before clamping begins; defines system nominal bus voltage compatibility. |
| VBR (min/max) | 26.7 V / 32.6 V - Breakdown occurs within this range at 5 mA test current; ensures predictable turn-on margin above VWM. |
| VC @ IPPM | 43.0 V - Clamping voltage at 84 A peak pulse current (10/1000 μs); limits downstream voltage stress during load dump. |
| PPPM (10/1000 μs) | 3600 W - Peak pulse power handling capacity; supports high-energy automotive transients per ISO7637-2. |
| TJ max. | 175 °C - Maximum junction temperature rating; enables placement near hot engine compartments without derating. |
| RθJC | 1.0 °C/W - Thermal resistance from junction to case; allows precise heatsink sizing for thermal management in high-power pulses. |
| Polarity | Uni-directional - Anode connected to heatsink; requires correct orientation in series with protected line for forward-biased clamping. |
Pinout & Package
Package: DO-218AB - Surface-mount, thermally enhanced case with metal heatsink tab (anode) and molded body meeting UL 94 V-0. Dimensions: 15.4 mm × 9.3 mm × 3.0 mm (L × W × H), lead pitch 10.5 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Cathode | Connected to protected circuit side; carries clamped transient current to ground/anode return path. |
| Lead 2 / Metal Heatsink | Anode | Primary thermal path and electrical anode terminal; must be soldered to copper pour or heatsink for RθJC = 1.0 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier process reduces leakage and improves long-term reliability at 175 °C. |
| AEC-Q101 qualification | Validated for automotive-grade stress testing including temperature cycling, humidity bias, and mechanical shock. |
| ISO7637-2 compliance | Meets load dump surge requirements (test pulse 5a) when mounted with adequate heatsinking and layout. |
| MSL Level 1 | Unlimited floor life at ≤30 °C/60 % RH; reflow compatible up to 245 °C peak, eliminating bake requirements. |
| Low VF (≤2.0 V @ 100 A) | Minimizes conduction losses and self-heating during high-current clamping events, preserving energy efficiency. |
Applications
| Automotive Load Dump Protection | 24 V Industrial Power Rail Protection |
|---|---|
|
Use Scenario: Protecting ECUs, sensors, and infotainment modules from 120 V/100 ms load dump transients in 24 V commercial vehicle systems. IC Role / Device Role / Timing Role: Uni-directional TVS diode placed between battery rail and protected IC input, clamping excess voltage within nanoseconds. Use Value: Limits peak voltage to 43.0 V at 84 A, preventing damage to downstream 36 V-rated components while sustaining 175 °C operation. |
Use Scenario: Safeguarding programmable logic controllers (PLCs) and motor drives against switching surges on 24 V DC control lines in factory automation. IC Role / Device Role / Timing Role: Primary overvoltage clamp on power input stage, activated only during >26.7 V transients to avoid interference with normal operation. Use Value: Delivers 3600 W surge handling with <10 μA leakage at 24 V, enabling stable long-term monitoring without signal drift or false triggers. |
| Heavy-Duty Truck Battery Management | Off-Highway Equipment Power Conditioning |
|
Use Scenario: Integration into battery disconnect units and voltage regulators exposed to cranking spikes and alternator ripple in mining and construction vehicles. IC Role / Device Role / Timing Role: High-energy transient absorber mounted directly to chassis heatsink, leveraging DO-218AB's low RθJC for thermal stability. Use Value: Withstands 500 A IFSM (8.3 ms) and maintains clamping performance across -55 °C to +175 °C ambient, ensuring cold-start and hot-idle reliability. |
Use Scenario: Front-end protection for GPS-guided agricultural machinery and forestry equipment operating in high-vibration, high-temperature environments. IC Role / Device Role / Timing Role: Robust uni-directional suppressor on main 24 V distribution board, oriented with heatsink grounded to chassis for EMI reduction. Use Value: AEC-Q101 qualification and JESD201 Class 2 whisker resistance ensure field longevity despite thermal cycling and mechanical stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ24A-E3/5AT | DO-214AC package, lower PPPM (400 W), higher VC (38.9 V @ 10.3 A), 150 °C TJ max. | Rated for general industrial use only; not AEC-Q101 qualified or ISO7637-2 validated. | Select when cost sensitivity outweighs automotive reliability requirements and surge energy is below 500 W. |
| TPSMD24 | DO-218AB package, same footprint, but 24 V VWM with 35.5 V VC @ 80 A, 3300 W PPPM, 175 °C TJ. | Also AEC-Q101 qualified and ISO7637-2 compliant; slightly lower clamping voltage but reduced peak power vs. SM5S24HE3/2D. | Prefer when tighter clamping margin is critical and 3300 W surge capacity suffices for target test profiles. |
Compared with SMAJ24A-E3/5AT and TPSMD24, the SM5S24HE3/2D offers the highest peak pulse power (3600 W) in the DO-218AB form factor with full automotive qualification, making it optimal for demanding load dump scenarios where both energy absorption and thermal robustness are essential.
Availability
SM5S24HE3/2D is available at Aetrix Electronics and suitable for automotive electronics, industrial PLCs, and off-highway vehicle power systems requiring stable component supply, AEC-Q101 compliance, and high-temperature surge resilience.
Supply support for SM5S24HE3/2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM5Sxx family is engineered specifically for automotive load dump and ISO7637-2 transient suppression, emphasizing thermal robustness (175 °C), low RθJC, and AEC-Q101 qualification in surface-mount packages.
FAQ
What is the clamping voltage of the SM5S24HE3/2D at its rated peak pulse current?
The SM5S24HE3/2D has a maximum clamping voltage (VC) of 43.0 V at 84 A peak pulse current (IPPM) under the standard 10/1000 μs waveform. This value is measured per the manufacturer's test conditions and defines the upper voltage limit imposed on protected circuits during surge events. The SM5S24HE3/2D maintains this clamping performance across its full operating temperature range, supporting reliable protection in harsh environments.
Is the SM5S24HE3/2D suitable for bidirectional transient suppression?
No, the SM5S24HE3/2D is a unidirectional TVS diode, with polarity defined by its anode-connected metal heatsink. It conducts only when the cathode is positive relative to the anode, making it appropriate for DC line protection where polarity is fixed. For bidirectional AC or reversible DC applications, a dedicated bi-directional device such as the SM5S24AHE3/2D (with "A" suffix) must be used instead of the SM5S24HE3/2D.
How does the DO-218AB package of the SM5S24HE3/2D improve thermal performance compared to standard SMC packages?
The DO-218AB package of the SM5S24HE3/2D features an integrated metal heatsink tab that serves as both the anode terminal and primary thermal path, achieving a typical junction-to-case thermal resistance (RθJC) of 1.0 °C/W. This is significantly lower than standard SMC packages (typically ≥2.5 °C/W), enabling more efficient heat dissipation during high-energy transients and supporting continuous operation at TJ = 175 °C when properly mounted.
Does the SM5S24HE3/2D meet automotive industry surge standards?
Yes, the SM5S24HE3/2D is explicitly designed to meet ISO7637-2 load dump surge requirements under specified test conditions, and it is AEC-Q101 qualified for automotive applications. Its 3600 W peak pulse power rating, 175 °C junction rating, and DO-218AB thermal design collectively support compliance with automotive transient immunity standards when implemented with appropriate PCB layout and heatsinking per Vishay's application guidelines.
What is the maximum reverse leakage current of the SM5S24HE3/2D at room temperature and at elevated temperature?
At TA = 25 °C, the SM5S24HE3/2D exhibits a maximum reverse leakage current (ID) of 10 μA at its 24.0 V stand-off voltage (VWM). At TJ = 175 °C, the leakage increases to a maximum of 150 μA under the same VWM condition. These values are confirmed in the official Vishay datasheet and reflect the device's stable performance across its full rated temperature range without premature conduction or signal interference.
SM5S24HE3/2D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 24V
- Voltage - Breakdown (Min):
- 26.7V
- Voltage - Clamping (Max) @ Ipp:
- 43V
- Current - Peak Pulse (10/1000µs):
- 84A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM5S24HE3/2D FAQ
1.How can I place an order for SM5S24HE3/2D through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S24HE3/2D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S24HE3/2D reliable?
The price and inventory of SM5S24HE3/2D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S24HE3/2D is usually 5 days.
3.What payment methods are accepted for SM5S24HE3/2D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S24HE3/2D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S24HE3/2D?
SM5S24HE3/2D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S24HE3/2D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S24HE3/2D?
For technical support, including SM5S24HE3/2D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S24HE3/2D requirements.
6.How does Aetrix verify that SM5S24HE3/2D is sourced from the original manufacturer or authorized distributors?
All SM5S24HE3/2D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S24HE3/2D meets industry standards.
7.What is the process for return or replacement of SM5S24HE3/2D?
All SM5S24HE3/2D units undergo pre-shipment inspection (PSI). If there is an issue with SM5S24HE3/2D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S24HE3/2D part is unused and in its original packaging.
Return procedure for SM5S24HE3/2D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S24HE3/2D Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

