My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SM5S26HE3/2D
- Part No.:
- SM5S26HE3/2D
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM5S26HE3/2D.pdf
- Description:
- TVS DIODE 26VWM 46.6VC DO218AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,631
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM5S26HE3/2D from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection in high-reliability power systems. It features a 26.0 V stand-off voltage (VWM), 28.9–35.3 V breakdown voltage (VBR), 46.6 V clamping voltage at 77 A peak pulse current, and 3600 W peak pulse power (10/1000 µs). Its DO-218AB package supports TJ = 175 °C operation and AEC-Q101 qualification.
For engineers reviewing the SM5S26HE3/2D datasheet, SM5S26HE3/2D pinout, SM5S26HE3/2D application, or SM5S26HE3/2D equivalent, key selection criteria include unidirectional polarity, 175 °C junction rating, ISO7637-2 compliance for load dump transients, low leakage (<10 µA at VWM), and thermal resistance of 1.0 °C/W (junction-to-case).
Technical Context
The SM5S26HE3/2D employs passivated anisotropic rectifier technology optimized for high-temperature stability and surge robustness. Its unidirectional architecture provides forward conduction during overvoltage events while maintaining low forward voltage drop (≤2.0 V at 100 A) and high surge capability (IFSM = 500 A, 8.3 ms half-sine).
Designed specifically for automotive-grade transient suppression, it meets MSL Level 1 per J-STD-020 (245 °C reflow peak), passes JESD201 Class 2 whisker testing, and delivers stable performance across -55 °C to +175 °C operating junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 26.0 V - Maximum continuous reverse operating voltage before clamping begins; defines system nominal bus voltage compatibility. |
| VBR (min/max) | 28.9 V / 35.3 V - Breakdown occurs within this range at 5 mA test current; ensures predictable turn-on threshold under stress. |
| VC @ IPPM | 46.6 V - Clamping voltage at 77 A (10/1000 µs); limits downstream component stress during worst-case transients. |
| PPPM (10/1000 µs) | 3600 W - Peak pulse power handling capacity; enables robust protection against ISO7637-2 load dump surges. |
| TJ max. | 175 °C - Maximum junction temperature rating; supports under-hood automotive placement without derating. |
| RθJC | 1.0 °C/W - Junction-to-case thermal resistance; allows effective heatsinking via metal heatsink terminal (anode). |
| Polarity | Unidirectional - Anode connected to heatsink; conducts only during positive transients relative to cathode. |
Pinout & Package
Package: DO-218AB - Surface-mount, single-ended metal heatsink package with matte tin-plated leads; anode terminal is the metal heatsink base, cathode is lead 1; meets UL 94 V-0 flammability rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Metal Heatsink Base) | Current entry path during clamping | Serves as primary thermal path and electrical connection; must be soldered to large copper area for thermal management. |
| Cathode (Lead 1) | Current exit path during clamping | Standard signal-side connection; routed to protected circuit node (e.g., battery rail input). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics use per stress test requirements including HTOL, TCT, and ESD. |
| Junction passivation optimized design | Reduces leakage drift and improves long-term reliability under high-temperature bias conditions (TJ = 175 °C). |
| Meets ISO7637-2 surge specification | Withstands defined load dump waveforms (e.g., Pulse 5a/b) without degradation when properly mounted. |
| MSL Level 1 (245 °C peak) | Compatible with standard lead-free reflow profiles without moisture-related failure risk. |
| JESD201 Class 2 whisker resistance | Prevents tin whisker growth on matte tin terminals, ensuring long-term interconnect integrity. |
Applications
| Automotive Load Dump Protection | 12 V Power Rail Transient Suppression |
|---|---|
|
Use Scenario: Protecting engine control units (ECUs), body control modules (BCMs), and infotainment systems from alternator load dump transients up to 120 V. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between battery rail and protected IC input, clamping excess energy into chassis ground. Use Value: Limits peak voltage to ≤46.6 V during 3600 W surges, preventing latch-up or gate oxide damage in downstream 3.3 V/5 V logic. |
Use Scenario: Safeguarding DC-DC converter inputs and microcontroller power supplies in vehicle subsystems exposed to switching noise and relay bounce. IC Role / Device Role / Timing Role: Fast-response transient suppressor shunting inductive kickback from solenoids, motors, and fuel injectors. Use Value: Achieves <10 µA reverse leakage at 26 V, minimizing quiescent current drain while delivering 77 A peak pulse current capability. |
| High-Temperature Under-Hood Electronics | AEC-Q101 Compliant Power Interface |
|
Use Scenario: Deployment in proximity to engine blocks or exhaust manifolds where ambient temperatures exceed 125 °C. IC Role / Device Role / Timing Role: Primary overvoltage clamp in power distribution units (PDUs) and junction boxes requiring extended thermal margin. Use Value: Maintains full 3600 W surge rating up to TJ = 175 °C due to low RθJC (1.0 °C/W) and thermally stable junction design. |
Use Scenario: BOM component for Tier 1 suppliers requiring certified components for ASIL-B and ASIL-C functional safety architectures. IC Role / Device Role / Timing Role: Qualified transient suppressor used in safety-critical power interfaces such as ADAS camera modules and radar sensors. Use Value: Eliminates need for additional qualification testing by providing documented AEC-Q101 evidence and traceable material categorization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ26A-E3/57T | DO-214AC (SMA) package; lower PPPM (400 W); VBR = 28.9–31.9 V; no AEC-Q101 qualification. | Limited to non-automotive industrial or consumer applications; unsuitable for load dump per ISO7637-2. | Select when cost sensitivity outweighs surge robustness and automotive qualification requirements. |
| SMCJ26AHE3/2D | DO-214AB (SMC) package; higher PPPM (1500 W); same VWM/VBR range; AEC-Q101 qualified but lower thermal performance (RθJC = 2.5 °C/W). | Acceptable for moderate-duty automotive applications but requires larger PCB footprint and reduced surge margin vs. SM5S26HE3/2D. | Choose if DO-218AB mounting constraints prevent use, accepting 58% lower peak power rating and higher thermal resistance. |
Compared with SMAJ26A-E3/57T and SMCJ26AHE3/2D, the SM5S26HE3/2D delivers 2.4× higher peak pulse power than the SMAJ variant and 2.4× better thermal resistance than the SMCJ variant-enabling compact, high-reliability load dump protection in space-constrained automotive modules.
Availability
SM5S26HE3/2D is available at Aetrix Electronics and suitable for automotive ECU protection, 12 V power rail stabilization, and high-temperature under-hood electronics requiring stable component supply and AEC-Q101 compliance.
Supply support for SM5S26HE3/2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and TVS devices with emphasis on reliability, thermal performance, and automotive qualification.
The SM5S series is engineered for high-energy transient suppression in automotive power systems, targeting load dump, inductive switching, and ISO7637-2 compliance with minimal PCB footprint and maximum thermal efficiency.
FAQ
What is the clamping voltage of the SM5S26HE3/2D at its rated peak pulse current?
The SM5S26HE3/2D has a maximum clamping voltage (VC) of 46.6 V at 77 A peak pulse current (10/1000 µs waveform). This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuits during transient events. The SM5S26HE3/2D maintains this clamping performance across its full operating temperature range, supporting robust design margins in automotive environments.
Is the SM5S26HE3/2D suitable for ISO7637-2 load dump protection?
Yes, the SM5S26HE3/2D is explicitly rated to meet ISO7637-2 surge specifications under defined test conditions, including Pulse 5a and 5b load dump waveforms. Its 3600 W peak pulse power rating, 175 °C junction capability, and DO-218AB metal heatsink construction enable reliable energy dissipation without degradation. The SM5S26HE3/2D is widely deployed in automotive ECUs and body control modules for this purpose.
What does the HE3/2D suffix indicate in SM5S26HE3/2D?
The HE3 suffix denotes RoHS-compliant construction and AEC-Q101 qualification, while the /2D indicates packaging in 13-inch plastic tape and reel with 750 units per reel and anode orientation toward the sprocket hole. This configuration ensures compatibility with automated SMT assembly lines and satisfies automotive traceability and environmental compliance requirements for the SM5S26HE3/2D.
How does the DO-218AB package of the SM5S26HE3/2D improve thermal performance?
The DO-218AB package of the SM5S26HE3/2D uses the metal heatsink base as the anode terminal, providing a direct low-resistance thermal path from junction to PCB copper. With a typical junction-to-case thermal resistance (RθJC) of 1.0 °C/W, the SM5S26HE3/2D achieves superior heat dissipation versus standard SMD packages like DO-214AB or DO-214AC-critical for sustaining 3600 W surges in high-ambient automotive applications.
Does the SM5S26HE3/2D have unidirectional or bidirectional polarity?
The SM5S26HE3/2D is a unidirectional transient voltage suppressor, with polarity defined as anode = metal heatsink base and cathode = lead 1. It conducts only during positive transients relative to the cathode, making it appropriate for DC power rail protection where reverse voltage blocking is required. Bidirectional variants (e.g., SM5S26AHE3/2D) are separate part numbers and not interchangeable with the SM5S26HE3/2D.
SM5S26HE3/2D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 26V
- Voltage - Breakdown (Min):
- 28.9V
- Voltage - Clamping (Max) @ Ipp:
- 46.6V
- Current - Peak Pulse (10/1000µs):
- 77A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM5S26HE3/2D FAQ
1.How can I place an order for SM5S26HE3/2D through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S26HE3/2D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S26HE3/2D reliable?
The price and inventory of SM5S26HE3/2D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S26HE3/2D is usually 5 days.
3.What payment methods are accepted for SM5S26HE3/2D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S26HE3/2D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S26HE3/2D?
SM5S26HE3/2D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S26HE3/2D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S26HE3/2D?
For technical support, including SM5S26HE3/2D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S26HE3/2D requirements.
6.How does Aetrix verify that SM5S26HE3/2D is sourced from the original manufacturer or authorized distributors?
All SM5S26HE3/2D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S26HE3/2D meets industry standards.
7.What is the process for return or replacement of SM5S26HE3/2D?
All SM5S26HE3/2D units undergo pre-shipment inspection (PSI). If there is an issue with SM5S26HE3/2D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S26HE3/2D part is unused and in its original packaging.
Return procedure for SM5S26HE3/2D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S26HE3/2D Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
