My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SM5S28AHE3_A/I
- Part No.:
- SM5S28AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM5S28AHE3_A/I.pdf
- Description:
- TVS DIODE 28VWM 45.4VC DO218AB
- Quantity:
- Payment:
- Shipping:
Inventory:730
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM5S28AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 28 V stand-off voltage (VWM), 32.8 V nominal breakdown (VBR), 45.4 V clamping voltage at 79 A peak pulse current, and 3600 W peak pulse power (10/1000 μs). It delivers AEC-Q101 qualification, 175 °C junction capability, and low leakage (<10 μA at VWM) for automotive load dump protection.
For engineers reviewing the SM5S28AHE3_A/I datasheet, SM5S28AHE3_A/I pinout, SM5S28AHE3_A/I application, or SM5S28AHE3_A/I equivalent, this page provides verified electrical parameters, thermal resistance values (RθJA = 55 °C/W), polarity configuration (anode heatsink), ISO7637-2 compliance context, and direct alternative part guidance per Vishay's official revision notice.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology with junction passivation optimized for high-temperature stability. Its unidirectional structure features an integrated metal heatsink acting as the anode terminal, enabling efficient thermal dissipation via PCB mounting.
It operates across -55 °C to +175 °C junction temperature range and meets MSL Level 1 per J-STD-020 with 245 °C reflow peak. The device is specifically characterized for 10 ms exponential load dump waveforms and supports high-reliability automotive applications requiring robust surge immunity without bidirectional conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 28.0 V - Maximum continuous reverse operating voltage before clamping begins; defines system-level overvoltage trip threshold. |
| VBR (nom) | 32.8 V - Breakdown voltage at 5 mA test current; ensures predictable turn-on during transients while avoiding false triggering. |
| VC @ IPPM | 45.4 V - Clamping voltage at 79 A peak pulse current (10/1000 μs); limits downstream voltage stress during surge events. |
| PPPM (10/1000 μs) | 3600 W - Peak pulse power handling capacity; enables protection against severe load dump and inductive switching surges. |
| TJ max | +175 °C - Maximum junction temperature rating; supports under-hood automotive placement without derating penalties. |
| RθJA | 55 °C/W - Junction-to-ambient thermal resistance on FR4 PCB; informs heatsinking requirements for sustained power dissipation. |
| Polarity | Unidirectional - Anode connected to heatsink; requires correct orientation in circuit to avoid forward conduction during normal operation. |
Pinout & Package
Package: DO-218AB - Surface-mount molded case with integral metal heatsink (anode), matte tin-plated leads, UL 94 V-0 compliant molding compound, and JESD201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Cathode | Connected to protected line; carries transient current into the device during clamping. |
| Lead 2 / Metal Heatsink | Anode | Primary thermal path and electrical return; must be soldered to large copper area for effective heat transfer and low-inductance grounding. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per stress test plan. |
| Junction passivation | Reduces surface leakage and enhances long-term stability under high humidity and bias conditions. |
| Low VF at high IF | Max 2.0 V forward voltage at 100 A pulse (300 μs); minimizes conduction loss during fault conditions. |
| ISO7637-2 compliance | Validated for Pulse 5a/b load dump waveforms; enables drop-in use in 12 V and 24 V vehicle electrical systems. |
| MSL Level 1 | Rated for reflow up to 245 °C peak; eliminates moisture sensitivity concerns during standard SMT assembly. |
Applications
| Automotive Load Dump Protection | Industrial Power Supply Input Protection |
|---|---|
Use Scenario: Protecting ECUs, ADAS modules, and infotainment systems from 12 V battery system load dump transients (up to ±120 V, 10 ms). IC Role / Device Role / Timing Role: Primary clamping element placed between battery rail and DC/DC input stage. Use Value: Limits voltage seen by downstream regulators to ≤45.4 V during 3600 W surge, preventing latch-up or destruction of 40 V-rated MOSFETs and controllers. |
Use Scenario: Safeguarding programmable logic controllers (PLCs) and motor drives against inductive kickback from solenoids and contactors. IC Role / Device Role / Timing Role: Parallel-connected transient absorber at main 24 V DC input bus. Use Value: Absorbs 2800 W (10/10,000 μs) surges without degradation, maintaining system uptime in factory automation environments. |
| Telecom Base Station Power Interface | Commercial Vehicle Lighting Control |
Use Scenario: Shielding remote radio head (RRH) power inputs from lightning-induced surges on outdoor feeder lines. IC Role / Device Role / Timing Role: First-stage transient suppression ahead of TVS arrays and filter networks. Use Value: Withstands repeated 79 A pulses while maintaining <10 μA leakage at 28 V, ensuring low standby power loss in always-on infrastructure. |
Use Scenario: Protecting LED driver ICs and CAN transceivers in heavy-duty truck lighting modules exposed to alternator ripple and jump-start spikes. IC Role / Device Role / Timing Role: Unidirectional clamp referenced to chassis ground with heatsink-mounted anode. Use Value: Enables compact layout using the DO-218AB metal tab as both thermal interface and low-inductance ground return path. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM5S28AHM3 | Same VWM/VBR/VC ratings and DO-218AB package; HM3 suffix indicates enhanced material formulation per newer Vishay spec. | Identical functional role; intended as direct replacement per Vishay's "Not For New Designs" notice for HE3 series. | Select SM5S28AHM3 for new designs requiring latest qualification revision and extended lifecycle support. |
| SMAJ28A | Lower PPPM (400 W vs. 3600 W), SMA package (smaller footprint, higher RθJA), same unidirectional polarity and ~28 V VWM. | Only suitable for lower-energy transients; not recommended for load dump or high-surge industrial environments. | Use SMAJ28A only where space constraints prohibit DO-218AB and surge energy remains below 400 W. |
Compared with SM5S28AHE3_A/I, SM5S28AHM3 offers identical electrical performance with updated manufacturing controls, while SMAJ28A trades surge capacity and thermal performance for compactness-making it unsuitable for automotive load dump but viable for consumer-grade board-level protection.
Availability
SM5S28AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronics, industrial power supplies, and telecom infrastructure requiring stable component supply and AEC-Q101-compliant surge protection.
Supply support for SM5S28AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and passive components with emphasis on reliability and high-temperature operation.
The SM5SxxA family is engineered for high-energy transient suppression in harsh environments, targeting automotive load dump, industrial motor control, and transportation electronics where 175 °C operation and ISO7637-2 compliance are mandatory.
FAQ
What is the maximum clamping voltage of the SM5S28AHE3_A/I at its rated peak pulse current?
The SM5S28AHE3_A/I has a maximum clamping voltage (VC) of 45.4 V when subjected to its rated peak pulse current of 79 A under the standard 10/1000 μs waveform. This value is measured per the conditions specified in Vishay Document Number 88382 and ensures downstream components see limited overvoltage during surge events. The SM5S28AHE3_A/I maintains this clamping performance across its full operating temperature range.
Is the SM5S28AHE3_A/I suitable for bidirectional transient protection?
No, the SM5S28AHE3_A/I is a unidirectional TVS diode and is not designed for bidirectional protection. Its internal structure connects the metal heatsink to the anode, making it functionally asymmetric. For applications requiring suppression of both positive and negative transients, a dedicated bidirectional device such as SMBJ28CA or separate back-to-back unidirectional devices must be used instead of the SM5S28AHE3_A/I.
What does the "HE3_A/I" suffix indicate in SM5S28AHE3_A/I?
The "HE3_A/I" suffix in SM5S28AHE3_A/I denotes RoHS-compliant, halogen-free construction (E3), AEC-Q101 qualification (H), revision code A (first production revision), and tape-and-reel packaging with anode orientation toward sprocket holes (I). This full ordering code confirms the device meets automotive reliability standards and environmental compliance requirements as defined in Vishay's official ordering information table.
How does the thermal performance of SM5S28AHE3_A/I compare to smaller-package TVS diodes?
The SM5S28AHE3_A/I achieves a junction-to-ambient thermal resistance (RθJA) of 55 °C/W on standard FR4, significantly lower than SMA- or SMC-packaged alternatives (e.g., ~100–150 °C/W). This is enabled by its DO-218AB package with integral metal heatsink-anode connection, which provides superior heat spreading. As a result, the SM5S28AHE3_A/I sustains higher average power dissipation and recovers faster between surges compared to smaller-footprint TVS devices.
Why is the SM5S28AHE3_A/I marked as "Not For New Designs"?
Vishay designates SM5S28AHE3_A/I as "Not For New Designs" because it has been superseded by the SM5S28AHM3 variant, which incorporates process and material improvements aligned with updated qualification standards. While SM5S28AHE3_A/I remains fully functional and supported for existing production, new designs should adopt SM5S28AHM3 to ensure long-term supply continuity and access to the latest reliability enhancements documented in Vishay's revision notices.
SM5S28AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28V
- Voltage - Breakdown (Min):
- 31.1V
- Voltage - Clamping (Max) @ Ipp:
- 45.4V
- Current - Peak Pulse (10/1000µs):
- 79A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM5S28AHE3_A/I FAQ
1.How can I place an order for SM5S28AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S28AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S28AHE3_A/I reliable?
The price and inventory of SM5S28AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S28AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM5S28AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S28AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S28AHE3_A/I?
SM5S28AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S28AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S28AHE3_A/I?
For technical support, including SM5S28AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S28AHE3_A/I requirements.
6.How does Aetrix verify that SM5S28AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM5S28AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S28AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM5S28AHE3_A/I?
All SM5S28AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM5S28AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S28AHE3_A/I part is unused and in its original packaging.
Return procedure for SM5S28AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S28AHE3_A/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
