My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SM5S30AHE3_A/I
- Part No.:
- SM5S30AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM5S30AHE3_A/I.pdf
- Description:
- TVS DIODE 30VWM 48.4VC DO218AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,157
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM5S30AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 30 V stand-off voltage (VWM), 33.3–36.8 V breakdown (VBR), 48.4 V clamping at 74 A peak pulse current, and 3600 W peak pulse power (10/1000 μs). It delivers AEC-Q101 qualification, 175 °C junction operation, and is engineered for automotive load dump protection.
For engineers reviewing the SM5S30AHE3_A/I datasheet, SM5S30AHE3_A/I pinout, SM5S30AHE3_A/I application, or SM5S30AHE3_A/I equivalent, key selection criteria include clamping voltage margin vs. system rail, thermal resistance (RθJM = 0.45 °C/W), unidirectional polarity alignment with DC bus architecture, and compliance with ISO7637-2 surge waveforms under high-temperature ambient conditions.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology to achieve low leakage (<10 μA at VWM) and low forward voltage drop (<2.0 V at 100 A), enabling robust protection without compromising normal conduction path efficiency. Its DO-218AB package integrates a metal heatsink as anode terminal, supporting high thermal conductivity and direct PCB heat sinking.
The device operates across -55 °C to +175 °C, with temperature coefficient of VBR at +0.090 %/°C - enabling predictable breakdown shift under thermal stress. It meets MSL Level 1 per J-STD-020 and passes JESD201 Class 2 whisker testing, confirming suitability for reflow-soldered automotive modules requiring long-term reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - maximum continuous reverse working voltage before clamping activation; defines safe operating margin below system rail. |
| VBR (min/typ/max) | 33.3 / 35.1 / 36.8 V - verified breakdown range at 5 mA test current; ensures consistent turn-on threshold across production lots. |
| VC @ IPPM | 48.4 V at 74 A (10/1000 μs) - clamping voltage limiting transient overshoot; must be below IC absolute max rating in protected circuit. |
| PPPM (10/1000 μs) | 3600 W - peak pulse power handling capacity; determines survivability against severe load dump events per ISO7637-2. |
| TJ max | +175 °C - maximum junction temperature; enables placement near hot components (e.g., power converters) without derating. |
| RθJM | 0.45 °C/W - junction-to-mount thermal resistance; confirms efficient heat transfer to heatsink or copper pour on PCB. |
| Polarity | Unidirectional - anode connected to ground or low-side reference; blocks reverse transients only; requires correct orientation in DC systems. |
Pinout & Package
Package: DO-218AB - surface-mount molded case with integral metal heatsink acting as anode terminal; meets UL 94 V-0 flammability; matte tin-plated leads compliant with J-STD-002 solderability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Metal Heatsink) | Current entry point during clamping | Functions as primary thermal path and electrical connection; must be soldered to large copper area or external heatsink for RθJM performance. |
| Cathode (Lead 1) | Current exit point during clamping | Connected to protected line (e.g., battery rail); defines directionality - only suppresses positive transients relative to anode reference. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD; supports PPAP documentation for Tier-1 programs. |
| Junction passivation optimized design | Reduces leakage current to ≤10 μA at VWM and 25 °C - minimizes standby power loss in always-on vehicle modules. |
| 175 °C TJ capability | Enables operation in engine bay or powertrain control units without thermal derating; extends lifetime under sustained high-ambient conditions. |
| Meets ISO7637-2 surge specification | Validated against Pulse 5a (load dump) waveform - ensures immunity to alternator-induced transients up to 60 V/100 ms in 12 V systems. |
| MSL Level 1, 245 °C peak reflow | Supports single-pass lead-free reflow assembly without moisture sensitivity concerns; eliminates bake requirements pre-assembly. |
Applications
| Automotive Load Dump Protection | DC Power Rail Transient Suppression |
|---|---|
Use Scenario: Protecting engine control unit (ECU) power input from alternator load dump surges during battery disconnection. IC Role / Device Role / Timing Role: Unidirectional TVS placed between 12 V battery rail and ECU input capacitor, clamping transients within 1 ns. Use Value: Limits voltage to ≤48.4 V during 3600 W surge, preventing damage to downstream LDOs and microcontrollers rated for 40 V absolute max. |
Use Scenario: Safeguarding infotainment head unit power supply against switching noise and relay-induced spikes in vehicle cabin. IC Role / Device Role / Timing Role: Standoff protector on fused 12 V input, activated only during >33.3 V overvoltage events; zero impact during normal operation. Use Value: Achieves <10 μA leakage at 30 V, eliminating measurable quiescent current penalty while maintaining fast response to transients. |
| Industrial Motor Drive DC Bus Clamp | Telematics Module Battery Interface |
Use Scenario: Clamping inductive kickback from brushed DC motor drivers in agricultural machinery control panels. IC Role / Device Role / Timing Role: Mounted directly across H-bridge DC bus terminals, referenced to chassis ground via heatsink. Use Value: Leverages 0.45 °C/W RθJM to dissipate energy into metal enclosure, avoiding thermal runaway during repeated 500 A IFSM surge events. |
Use Scenario: Securing LTE/GPS module power input against jump-start surges and cold-cranking voltage dips in fleet tracking devices. IC Role / Device Role / Timing Role: First-line defense on battery input, coordinated with upstream fuse and downstream DC/DC converter OVP. Use Value: Maintains functionality at -40 °C to +125 °C ambient, with VBR shift fully characterized by +0.090 %/°C coefficient for accurate margin analysis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM5S30AHM3_A/I | Same electrical specs and DO-218AB package; HM3 suffix indicates enhanced material formulation per newer Vishay internal spec. | No functional difference; HM3 replaces HE3 for new designs per Vishay's "Not For New Designs" notice. | Select SM5S30AHM3_A/I for new designs requiring continued supply assurance and latest qualification revision. |
| SMAJ30A | Lower PPPM (400 W vs. 3600 W), SMA package (RθJA = 60 °C/W vs. 0.45 °C/W), no AEC-Q101 qualification. | Suitable only for low-energy transients in non-automotive consumer electronics; cannot replace SM5S30AHE3_A/I in load dump scenarios. | Use SMAJ30A only in cost-sensitive, non-automotive applications where surge energy is <10% of ISO7637-2 Pulse 5a requirements. |
Compared with SM5S30AHE3_A/I, SM5S30AHM3_A/I offers identical protection performance with updated manufacturing controls, while SMAJ30A provides only basic clamping for low-power circuits - neither serves as a drop-in replacement without system-level validation of thermal and surge margins.
Availability
SM5S30AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECU protection, industrial motor drive DC bus clamping, and telematics module battery interface applications requiring stable component supply and long-term lifecycle support.
Supply support for SM5S30AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on high-reliability and automotive-grade solutions.
The SM5SxxA series is part of Vishay's PAR® TVS platform, designed specifically for high-energy automotive load dump and industrial surge protection where thermal robustness and AEC-Q101 compliance are mandatory.
FAQ
What is the clamping voltage of SM5S30AHE3_A/I at its rated peak pulse current?
The SM5S30AHE3_A/I has a maximum clamping voltage (VC) of 48.4 V when subjected to its specified peak pulse current of 74 A under the 10/1000 μs waveform. This value is measured per standard test conditions in the Vishay datasheet (Document Number: 88382) and defines the upper voltage limit imposed on the protected circuit during surge events. Designers must ensure this clamping level remains below the absolute maximum ratings of downstream components.
Is SM5S30AHE3_A/I suitable for new automotive designs?
No - Vishay explicitly marks SM5S30AHE3_A/I as "Not For New Designs", recommending SM5S30AHM3_A/I as the designated alternative. The HE3 version remains available for legacy production and repair, but new designs should adopt the HM3 variant to ensure long-term supply, updated process controls, and alignment with current AEC-Q101 test revisions.
What does the "HE3" suffix indicate in SM5S30AHE3_A/I?
The "HE3" suffix in SM5S30AHE3_A/I denotes RoHS-compliant, halogen-free construction with matte tin-plated leads, AEC-Q101 qualification, and compliance with JESD201 Class 2 whisker resistance. It also specifies that the device meets JEDEC MSL Level 1 and is rated for peak reflow temperatures up to 245 °C - critical for lead-free assembly in automotive modules.
How is thermal management implemented in SM5S30AHE3_A/I?
SM5S30AHE3_A/I uses its metal heatsink as the anode terminal to enable direct thermal conduction from the silicon junction to the PCB copper pour or external heatsink. With a junction-to-mount thermal resistance (RθJM) of 0.45 °C/W, effective heat dissipation requires low-impedance soldering of the heatsink to ≥1000 mm² of 2 oz. copper. This architecture avoids reliance on ambient convection, making it ideal for sealed or high-temperature enclosures.
Does SM5S30AHE3_A/I meet ISO7637-2 requirements?
Yes - SM5S30AHE3_A/I is validated to meet ISO7637-2 for automotive transient immunity, specifically Pulse 5a (load dump) under defined test conditions. Its 3600 W peak pulse power rating and 48.4 V clamping voltage are sufficient to suppress the 60 V/100 ms waveform typical of 12 V system alternator disconnection events, provided layout minimizes inductance in the clamping path.
SM5S30AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- 74A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM5S30AHE3_A/I FAQ
1.How can I place an order for SM5S30AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S30AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S30AHE3_A/I reliable?
The price and inventory of SM5S30AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S30AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM5S30AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S30AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S30AHE3_A/I?
SM5S30AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S30AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S30AHE3_A/I?
For technical support, including SM5S30AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S30AHE3_A/I requirements.
6.How does Aetrix verify that SM5S30AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM5S30AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S30AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM5S30AHE3_A/I?
All SM5S30AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM5S30AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S30AHE3_A/I part is unused and in its original packaging.
Return procedure for SM5S30AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S30AHE3_A/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
