My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SM5S33AHM3/I
- Part No.:
- SM5S33AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AC
- Datasheet:
-
SM5S33AHM3/I.pdf
- Description:
- TVS DIODE 33VWM 53.3VC DO218AC
- Quantity:
- Payment:
- Shipping:
Inventory:6,185
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM5S33AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 33 V stand-off voltage (VWM), 38.7 V nominal breakdown voltage (VBR), 53.3 V clamping voltage at 150 A peak pulse current, and 3600 W peak pulse power (10/1000 μs). It delivers AEC-Q101 qualification, 175 °C junction temperature capability, and low leakage (<10 μA at VWM) for automotive load dump protection.
For engineers reviewing the SM5S33AHM3/I datasheet, SM5S33AHM3/I pinout, SM5S33AHM3/I application, or SM5S33AHM3/I equivalent, key selection criteria include unidirectional polarity, DO-218AB thermal performance (RθJM = 0.45 °C/W), ISO7637-2 compliance, MSL Level 1 rating, and verified 500 A IFSM surge withstand - all critical for high-reliability 12 V/24 V automotive power rail designs.
Technical Context
This device uses passivated anisotropic rectifier technology to achieve stable clamping under repetitive transients while maintaining low forward voltage drop (≤2.0 V at 100 A) and high-temperature operation up to TJ = 175 °C. Its DO-218AB package integrates a metal heatsink as anode terminal, enabling efficient thermal conduction to PCB copper.
The SM5S33AHM3/I exhibits a positive temperature coefficient of VBR (αT = 0.091 %/°C), ensuring predictable voltage drift across temperature. It meets JESD22-B102 solderability and JESD201 Class 2 whisker resistance standards, with matte tin-plated terminals and UL 94 V-0 molding compound.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC bias margin in 24 V automotive systems. |
| VBR (nom) | 38.7 V - Breakdown voltage at 5 mA test current; ensures reliable turn-on during load dump transients exceeding 33 V. |
| VC @ IPPM | 53.3 V - Clamping voltage at 150 A (10/1000 μs); limits downstream IC stress during ISO7637-2 Pulse 5a events. |
| PPPM (10/1000 μs) | 3600 W - Peak pulse power handling; supports single-event energy absorption without failure in harsh automotive environments. |
| TJ max | 175 °C - Maximum junction temperature; enables operation in under-hood locations with minimal derating. |
| ID @ VWM | <10 μA - Reverse leakage at rated stand-off voltage; minimizes quiescent power loss in always-on vehicle modules. |
| RθJM | 0.45 °C/W - Junction-to-mount thermal resistance; confirms efficient heat transfer to heatsink or PCB copper pour. |
Pinout & Package
Package: DO-218AB - surface-mount, anode-heatsink configuration with matte tin-plated terminals; UL 94 V-0 compliant molding compound; MSL Level 1 (245 °C peak reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Metal Heatsink) | Current entry point during clamping | Direct thermal path to PCB copper or external heatsink; must be connected to system ground or low-impedance return plane. |
| Cathode (Lead 1) | Current exit point during clamping | Connected to protected line (e.g., battery rail); forms series path with anode to shunt surge energy to ground. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JEDEC standards. |
| DO-218AB metal heatsink | Enables RθJM = 0.45 °C/W - 4× lower than standard SMA packages - reducing thermal stress during repeated surges. |
| ISO7637-2 compliant | Withstands Load Dump (Pulse 5a) waveforms up to 35 V/100 ms without degradation when properly mounted. |
| Low VF at high IF | ≤2.0 V forward voltage at 100 A (300 μs pulse) - minimizes conduction loss during sustained overvoltage conditions. |
| Junction passivation | Stable VBR drift (±5 % over life) and <10 μA leakage at 175 °C - critical for long-term under-hood deployment. |
Applications
| Automotive Body Control Module (BCM) | Engine Control Unit (ECU) Power Input |
|---|---|
Use Scenario: Protects microcontroller power rails against alternator load dump transients during battery disconnection. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery input and LDO/regulator input to clamp spikes before they reach sensitive logic. Use Value: Limits clamped voltage to 53.3 V at 150 A, preventing damage to 36 V-rated input stages while supporting AEC-Q101 qualification. |
Use Scenario: Shields engine management MCU from ignition coil switching noise and starter motor cranking surges. IC Role / Device Role / Timing Role: Primary transient suppressor on main 12 V supply rail upstream of DC/DC converters and analog sensor supplies. Use Value: Delivers 3600 W peak pulse power handling and 175 °C operation - enabling placement near high-heat zones without derating. |
| ADAS Camera Power Supply | Electric Power Steering (EPS) ECU |
Use Scenario: Guards image sensor and SerDes interface power against EMI-induced transients in front-end camera modules. IC Role / Device Role / Timing Role: Fast-response TVS on 5 V or 3.3 V regulated output to suppress coupling from nearby high-current traces. Use Value: Low leakage (<10 μA) preserves low-power sleep mode integrity; DO-218AB footprint allows compact layout near connectors. |
Use Scenario: Safeguards motor driver gate drivers and position sensor interfaces from inductive kickback during EPS motor commutation. IC Role / Device Role / Timing Role: High-energy TVS on 12 V auxiliary rail feeding H-bridge pre-drivers and current sense amplifiers. Use Value: 500 A IFSM rating handles repeated motor stall events; metal heatsink design sustains >10⁵ surge cycles at 80 % derated power. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM5S33AHM3 | No /I suffix - bulk packaging instead of tape-and-reel; identical electrical specs and DO-218AB package. | Same automotive load dump protection function; differs only in delivery format - not suitable for automated SMT assembly without reel conversion. | Select SM5S33AHM3/I for pick-and-place compatibility; SM5S33AHM3 for manual prototyping or low-volume hand-soldering. |
| SM5S36AHM3/I | Higher VWM (36 V) and VBR (42.1 V nominal); same package, power rating, and AEC-Q101 qualification. | Better suited for 24 V systems with higher transient margins; clamps at 58.1 V vs. 53.3 V - less protective for 36 V-rated downstream ICs. | Choose SM5S33AHM3/I for 12 V/24 V dual-voltage platforms where tighter clamping is required; SM5S36AHM3/I for pure 24 V systems needing higher stand-off headroom. |
Compared with SM5S33AHM3 and SM5S36AHM3/I, the SM5S33AHM3/I offers optimal balance of clamping voltage (53.3 V), stand-off margin (33 V), and automated assembly readiness - making it the preferred choice for production-grade 12 V automotive electronics requiring both precision protection and SMT scalability.
Availability
SM5S33AHM3/I is available at Aetrix Electronics and suitable for automotive body control modules, engine control units, ADAS camera power supplies, and electric power steering ECUs requiring stable component supply with full traceability and lifecycle continuity.
Supply support for SM5S33AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SM5SxxA family was engineered specifically for high-reliability automotive transient suppression, featuring DO-218AB thermal architecture and AEC-Q101 validation to meet stringent under-hood environmental demands.
FAQ
What is the clamping voltage of the SM5S33AHM3/I at its rated peak pulse current?
The SM5S33AHM3/I has a maximum clamping voltage (VC) of 53.3 V at 150 A peak pulse current with a 10/1000 μs waveform. This value is measured per standard test conditions and ensures downstream components see limited overvoltage during ISO7637-2 load dump events. The SM5S33AHM3/I maintains this clamping performance across its full operating temperature range from -55 °C to +175 °C.
Is the SM5S33AHM3/I suitable for 24 V automotive systems?
Yes, the SM5S33AHM3/I is explicitly designed for 12 V and 24 V automotive systems. Its 33 V stand-off voltage provides adequate margin above nominal 24 V rails, while its 53.3 V clamping voltage stays within safe limits for most 36 V-rated power management ICs. The SM5S33AHM3/I's AEC-Q101 qualification and 175 °C junction rating confirm suitability for under-hood deployment in 24 V architectures.
Does the SM5S33AHM3/I have a bidirectional configuration option?
No, the SM5S33AHM3/I is unidirectional only, as confirmed in the Vishay datasheet. It features anode-heatsink polarity and is intended for DC-biased applications where reverse conduction is not required. For bidirectional protection needs, engineers must select alternate families such as the SMBJ or SMCJ series - the SM5S33AHM3/I does not offer a bidirectional variant.
What is the thermal resistance from junction to mount (RθJM) for the SM5S33AHM3/I?
The SM5S33AHM3/I has a typical junction-to-mount thermal resistance (RθJM) of 0.45 °C/W, measured using the Transient Dual Interface Method (JEDEC 51-14). This low value reflects the DO-218AB package's integrated metal heatsink, which must be soldered to a large copper area for optimal thermal performance. The SM5S33AHM3/I's RθJM enables effective heat dissipation during repetitive surge events without requiring external heatsinks.
How does the SM5S33AHM3/I compare to older SM5S33A versions in terms of qualification and packaging?
The SM5S33AHM3/I replaces legacy SM5S33A variants with enhanced qualifications: it carries the "H" suffix indicating AEC-Q101 qualification and "M3" denoting tape-and-reel packaging per EIA-481 standard. Unlike non-H versions, the SM5S33AHM3/I is fully validated for automotive use, including humidity testing and temperature cycling. The /I suffix specifies anode-toward-sprocket-hole orientation - critical for automated placement accuracy in the SM5S33AHM3/I.
SM5S33AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- 68A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AC
SM5S33AHM3/I FAQ
1.How can I place an order for SM5S33AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S33AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S33AHM3/I reliable?
The price and inventory of SM5S33AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S33AHM3/I is usually 5 days.
3.What payment methods are accepted for SM5S33AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S33AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S33AHM3/I?
SM5S33AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S33AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S33AHM3/I?
For technical support, including SM5S33AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S33AHM3/I requirements.
6.How does Aetrix verify that SM5S33AHM3/I is sourced from the original manufacturer or authorized distributors?
All SM5S33AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S33AHM3/I meets industry standards.
7.What is the process for return or replacement of SM5S33AHM3/I?
All SM5S33AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM5S33AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S33AHM3/I part is unused and in its original packaging.
Return procedure for SM5S33AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S33AHM3/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
