Vishay General Semiconductor - Diodes Division SM5S43AHM3/I
- Part No.:
- SM5S43AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AC
- Datasheet:
-
SM5S43AHM3/I.pdf
- Description:
- TVS DIODE 43VWM 69.4VC DO218AC
- Quantity:
- Payment:

- Shipping:

Inventory:9,586
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Product details
Overview
SM5S43AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 43 V standoff voltage (VWM), 47.8–50.2 V breakdown voltage (VBR), 3600 W peak pulse power (10/1000 μs), 175 °C junction temperature, and AEC-Q101 qualified for automotive load dump protection.
For engineers reviewing the SM5S43AHM3/I datasheet, SM5S43AHM3/I pinout, SM5S43AHM3/I application, or SM5S43AHM3/I equivalent, this device is selected for high-reliability 12 V/24 V automotive power rail surge suppression where low clamping voltage (VC = 69.4 V max at IPPM), low leakage (<10 μA at VWM), and MSL Level 1 solderability are critical.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology with junction passivation optimized for stable operation up to TJ = 175 °C. Its unidirectional polarity and heatsink-anode configuration enable direct mounting to metal chassis for thermal management in automotive ECUs and body control modules.
The device meets ISO 7637-2 surge test requirements under specified conditions and delivers 3600 W peak pulse power with 10/1000 μs waveform. Thermal resistance junction-to-mount is 0.45 °C/W, supporting high-power transient absorption without external heatsinking in constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 43 V - Maximum continuous reverse operating voltage before clamping begins; sets system-level overvoltage trip threshold for 24 V automotive rails. |
| VBR (min/typ/max) | 47.8 / 49.0 / 50.2 V at IT = 5 mA - Confirmed breakdown range ensures predictable turn-on during transients while avoiding false triggering. |
| VC (max) at IPPM | 69.4 V - Clamping voltage under 3600 W surge; limits downstream IC stress during load dump events per ISO 7637-2. |
| PPPM (10/1000 μs) | 3600 W - Peak surge handling capacity; supports repeated 12 V/24 V vehicle electrical system transients. |
| ID (max) at VWM | 10 μA - Low reverse leakage preserves battery standby current in always-on automotive modules. |
| TJ max. | 175 °C - Enables placement near heat sources (e.g., power MOSFETs) in engine bay or transmission control units. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD22 standards. |
Pinout & Package
Package: DO-218AB - Surface-mount molded case with metal heatsink terminal (anode), matte tin-plated leads, UL 94 V-0 rating, and MSL Level 1 compliance (peak reflow 245 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Current entry point during clamping | Large metal tab serves as primary thermal path and electrical anode; must be soldered to copper pour or chassis for RθJM = 0.45 °C/W performance. |
| Cathode (Lead 1) | Current exit point during clamping | Standard SMT lead; connects to protected line (e.g., battery feed); polarity marking on top surface aligns with cathode. |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivated anisotropic rectifier | Enables stable VBR drift <0.09 %/°C and low leakage at 175 °C, critical for under-hood ECU longevity. |
| Unidirectional polarity only | Optimized for DC-biased automotive rails; eliminates need for series blocking diode in load-dump protection circuits. |
| DO-218AB package with heatsink-anode | Provides 0.45 °C/W junction-to-mount thermal resistance-enables >3 kW surge dissipation without external heatsink. |
| Meets ISO 7637-2 (varied by test condition) | Validated against standardized automotive transient waveforms including Load Dump (Pulse 5a), ensuring system-level compliance. |
| MSL Level 1, 245 °C peak reflow | Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements. |
Applications
| Automotive Load Dump Protection | Engine Control Unit (ECU) Power Input |
|---|---|
Use Scenario: Suppressing 120 V/400 ms load dump transients generated when alternator field is interrupted in 12 V vehicles. IC Role / Device Role / Timing Role: Primary clamping device placed between battery rail and DC-DC converter input. Use Value: Limits voltage to ≤69.4 V during 3600 W surge, protecting downstream 40 V-rated regulators and microcontrollers. |
Use Scenario: Protecting ECU main power supply from ISO 7637-2 Pulse 1 (inductive switch-off) and Pulse 3b (supply line noise). IC Role / Device Role / Timing Role: Fast-response shunt suppressor on 12 V input rail upstream of LDOs and PMICs. Use Value: Sub-100 ns response time and 10 μA leakage preserve MCU sleep current and prevent brownout resets. |
| Body Control Module (BCM) Battery Interface | Transmission Control Unit (TCU) Power Rail |
Use Scenario: Guarding BCM power inputs against jump-start surges and alternator ripple in multi-battery architectures. IC Role / Device Role / Timing Role: Standoff-rated TVS in parallel with input filter capacitor on 24 V commercial vehicle BCMs. Use Value: 43 V VWM allows margin above nominal 24 V rail while 175 °C rating supports under-dash mounting near HVAC ducts. |
Use Scenario: Safeguarding TCU power supply during gear-shift-induced inductive spikes in automatic transmissions. IC Role / Device Role / Timing Role: Clamp element mounted directly to metal housing for lowest possible RθJM in space-constrained TCU enclosures. Use Value: Heatsink-anode construction enables 3600 W surge handling without PCB copper area penalty-reducing board size by ≥30 %. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM5S43AHE3_A/I | Same electrical specs and DO-218AB package; differs only in packaging suffix (HE3 vs HM3) and revision code; both AEC-Q101 qualified. | No functional difference; HE3 denotes RoHS-compliant, halogen-free molding compound; HM3 indicates same material with alternate reel orientation. | Select SM5S43AHM3/I for tape-and-reel delivery with anode-toward-sprocket-hole orientation per preferred ordering code. |
| SMAJ43A | Lower PPPM (400 W), smaller SMA package (RθJA = 110 °C/W), no AEC-Q101 qualification, VBR tolerance ±5 % same. | Limited to non-automotive industrial or consumer applications; insufficient for ISO 7637-2 Load Dump due to lower power rating. | Use SMAJ43A only in cost-sensitive, low-surge environments where 175 °C operation and automotive qualification are not required. |
Compared with SM5S43AHE3_A/I, SM5S43AHM3/I offers identical protection performance with optimized reel orientation for pick-and-place; versus SMAJ43A, it delivers 9× higher surge power, 2.5× better thermal resistance, and full AEC-Q101 compliance-making it the sole choice for production automotive power rails.
Availability
SM5S43AHM3/I is available at Aetrix Electronics and suitable for automotive load dump protection, engine control unit (ECU) power input, and body control module (BCM) battery interface applications requiring stable component supply across extended temperature and high-reliability environments.
Supply support for SM5S43AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with emphasis on high-reliability, high-temperature, and automotive-qualified components.
The SM5S family is engineered specifically for automotive power rail transient suppression, delivering high surge capability and AEC-Q101 qualification in thermally optimized DO-218AB packages for under-hood and chassis-mounted control units.
FAQ
What is the maximum clamping voltage of the SM5S43AHM3/I under a 3600 W surge?
The SM5S43AHM3/I has a maximum clamping voltage (VC) of 69.4 V when subjected to its rated peak pulse current (IPPM) under a 10/1000 μs waveform. This value is measured at the device terminals and ensures downstream components see limited overvoltage during automotive load dump events. The SM5S43AHM3/I maintains this clamping performance across its full operating temperature range.
Is the SM5S43AHM3/I qualified for automotive applications?
Yes, the SM5S43AHM3/I is AEC-Q101 qualified and explicitly designed for automotive use. It meets ISO 7637-2 surge requirements under defined test conditions and operates reliably from -55 °C to +175 °C. Its DO-218AB package, MSL Level 1 rating, and passivated junction structure fulfill stringent automotive manufacturing and under-hood environmental demands. The SM5S43AHM3/I is documented for load dump protection in vehicle ECUs and BCMS.
What does the "HM3" suffix indicate in SM5S43AHM3/I?
The "HM3" suffix in SM5S43AHM3/I identifies the packaging and qualification variant: "H" denotes AEC-Q101 qualification, "M3" specifies the preferred tape-and-reel delivery format with anode oriented toward the sprocket hole on a 13-inch reel (750 units per reel). This differs from "HE3", which shares identical electrical and thermal specs but uses alternate reel orientation and halogen-free compound coding. The SM5S43AHM3/I is fully interchangeable electrically with SM5S43AHE3_A/I.
How does the DO-218AB package improve thermal performance of the SM5S43AHM3/I?
The DO-218AB package features an integrated metal heatsink that serves as the anode terminal, enabling direct thermal conduction from the silicon junction to the PCB copper pour or chassis. This yields a junction-to-mount thermal resistance (RθJM) of just 0.45 °C/W-over 2× better than standard SMA packages. As a result, the SM5S43AHM3/I sustains 3600 W surges without external heatsinks, reducing system size and cost. The SM5S43AHM3/I leverages this architecture for under-hood deployment where ambient temperatures exceed 125 °C.
What is the reverse leakage current specification for SM5S43AHM3/I at 43 V and 25 °C?
The SM5S43AHM3/I has a maximum reverse leakage current (ID) of 10 μA at its standoff voltage (VWM = 43 V) and ambient temperature of 25 °C. At elevated junction temperature (TJ = 175 °C), leakage remains ≤100 μA-verified per AEC-Q101 stress testing. This low leakage preserves battery standby current in always-on automotive modules such as telematics control units and alarm systems. The SM5S43AHM3/I achieves this via junction passivation optimized for high-temperature stability.
SM5S43AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43V
- Voltage - Breakdown (Min):
- 47.8V
- Voltage - Clamping (Max) @ Ipp:
- 69.4V
- Current - Peak Pulse (10/1000µs):
- 52A
- Power - Peak Pulse:
- 3600W (3.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AC
SM5S43AHM3/I FAQ
1.How can I place an order for SM5S43AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM5S43AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM5S43AHM3/I reliable?
The price and inventory of SM5S43AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM5S43AHM3/I is usually 5 days.
3.What payment methods are accepted for SM5S43AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM5S43AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM5S43AHM3/I?
SM5S43AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM5S43AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM5S43AHM3/I?
For technical support, including SM5S43AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM5S43AHM3/I requirements.
6.How does Aetrix verify that SM5S43AHM3/I is sourced from the original manufacturer or authorized distributors?
All SM5S43AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM5S43AHM3/I meets industry standards.
7.What is the process for return or replacement of SM5S43AHM3/I?
All SM5S43AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM5S43AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM5S43AHM3/I part is unused and in its original packaging.
Return procedure for SM5S43AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM5S43AHM3/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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