Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM6S10HE3/2D

Part No.:
SM6S10HE3/2D
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-218AB
Datasheet:
AetrixSM6S10HE3/2D.pdf
Description:
TVS DIODE 10VWM 18.8VC DO218AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,108

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM6S10HE3/2D from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 10 V stand-off voltage (VWM), 11.1–13.6 V breakdown range (VBR), 4600 W peak pulse power (10/1000 μs), 175 °C maximum junction temperature, and DO-218AB package with heatsink-anode polarity.

For engineers reviewing the SM6S10HE3/2D datasheet, SM6S10HE3/2D pinout, SM6S10HE3/2D application, or SM6S10HE3/2D equivalent, key selection criteria include unidirectional clamping performance under ISO7637-2 load dump transients, AEC-Q101 qualification, thermal resistance of 0.95 °C/W (junction-to-case), and compatibility with high-reliability automotive power rail protection.

Technical Context

The SM6S10HE3/2D employs passivated anisotropic rectifier technology optimized for high-temperature stability and low leakage. Its unidirectional architecture provides forward conduction during overvoltage events, with clamping voltage of 18.8 V at 245 A peak pulse current (10/1000 μs waveform).

It is rated for 600 A non-repetitive forward surge current (8.3 ms half-sine), supports operation from −55 °C to +175 °C, and meets MSL Level 1 per J-STD-020 with 245 °C reflow peak temperature - confirming suitability for automated SMT assembly in harsh-environment automotive modules.

Key Specifications

ParameterValue and Actual Design Meaning
VWM10 V - Maximum continuous reverse operating voltage before clamping initiates
VBR (min/max)11.1 V / 13.6 V - Breakdown voltage range at 5 mA test current; defines turn-on threshold tolerance
VC @ IPPM18.8 V - Clamping voltage at 245 A peak pulse current; determines protected circuit's max transient exposure
PPPM (10/1000 μs)4600 W - Peak pulse power handling capability; enables robust load dump suppression per ISO7637-2
TJ max+175 °C - Maximum junction temperature; supports under-hood placement without derating
RθJC0.95 °C/W - Junction-to-case thermal resistance; enables effective heat transfer to PCB copper or heatsink
PolarityUnidirectional - Anode connected to heatsink; requires correct orientation for forward-biased clamping

Pinout & Package

Package: DO-218AB - Surface-mount, dual-terminal case with integral metal heatsink acting as terminal 2 (anode). Dimensions: 15.4 mm × 9.5 mm × 3.8 mm (L × W × H); RoHS-compliant matte tin-plated leads; meets UL 94 V-0.

Pin/TerminalCircuit RoleDesign Meaning
Lead 1CathodeConnected to protected line (e.g., 12 V battery rail); reverse-biased during normal operation
Lead 2 / Metal HeatsinkAnodeMust be connected to system ground or low-impedance return path; serves as primary thermal interface and current return

Key Features

FeatureDesign Value
Junction passivationOptimized anisotropic rectifier design ensures stable VBR and low leakage up to TJ = 175 °C
AEC-Q101 qualificationValidated reliability for automotive electronics including engine control units and body controllers
ISO7637-2 complianceMeets load dump surge requirements (test condition dependent) without external series impedance
MSL Level 1 ratingSupports standard reflow profiles up to 245 °C peak, eliminating moisture sensitivity handling constraints
Low VF at high currentMax 1.9 V forward voltage at 100 A (8.3 ms half-sine), minimizing power loss during clamping

Applications

Automotive Load Dump Protection12 V Power Rail Surge Suppression

Use Scenario: Protecting ECUs, sensors, and infotainment systems from alternator-induced load dump transients (up to 40 V, 400 ms) in vehicles with 12 V electrical systems.

IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between battery rail and ground, conducting forward during overvoltage to clamp energy into chassis ground.

Use Value: Limits rail voltage to ≤18.8 V during 4600 W transients, preventing damage to downstream 24 V-rated ICs and enabling compliance with OEM surge immunity specs.

Use Scenario: Safeguarding power inputs of ADAS cameras, radar modules, and telematics units against switching noise and inductive kickback from solenoids or relays.

IC Role / Device Role / Timing Role: Primary clamping device on main 12 V supply line, activated within nanoseconds of overvoltage onset to shunt surge current away from sensitive analog/digital circuitry.

Use Value: Delivers 245 A peak pulse current capacity with 0.95 °C/W thermal resistance, ensuring reliable clamping without thermal runaway during repeated surges.

Engine Control Unit (ECU) Input ProtectionBody Control Module (BCM) Power Interface

Use Scenario: Integration into engine management systems exposed to high ambient temperatures (>125 °C) and repetitive load dump events during cold cranking and alternator regulation faults.

IC Role / Device Role / Timing Role: High-temperature-stable TVS mounted directly on power entry PCB section, leveraging metal heatsink for direct thermal coupling to ground plane.

Use Value: Maintains specified VBR and leakage (<15 μA at VWM) up to +175 °C junction temperature, eliminating parameter drift-related misclamping in under-hood environments.

Use Scenario: Protecting BCM power inputs interfacing with door locks, lighting, and HVAC actuators where inductive loads generate repetitive 100–500 V spikes.

IC Role / Device Role / Timing Role: Fast-response unidirectional suppressor placed upstream of DC/DC converters and LDO regulators powering microcontrollers and CAN transceivers.

Use Value: Provides 17.0–18.8 V clamping window across SM6S10 variants, ensuring regulated outputs remain within safe input ranges during 10/1000 μs transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ10ALower PPPM (400 W vs. 4600 W); SMA package (smaller footprint, higher RθJA)Not suitable for load dump; limited to ESD and low-energy transientsSelect only for space-constrained consumer-grade designs with <500 W surge requirements
1.5KE10AThrough-hole TO-204AA package; same VWM/VBR but lower thermal performance (RθJC ≈ 3.5 °C/W)Requires manual assembly; unsuitable for high-volume SMT automotive productionConsider only for prototyping or legacy through-hole boards where DO-218AB rework is impractical

Compared with SMAJ10A and 1.5KE10A, the SM6S10HE3/2D delivers 11.5× higher surge power handling and integrated heatsink thermal path - making it the only option qualified for AEC-Q101-compliant, high-power, surface-mount automotive load dump protection.

Availability

SM6S10HE3/2D is available at Aetrix Electronics and suitable for automotive ECU protection, 12 V power rail surge suppression, and body control module interfaces requiring stable component supply across extended temperature and high-reliability production cycles.

Supply support for SM6S10HE3/2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on high-reliability and automotive-grade components.

The SM6S10HE3/2D belongs to Vishay's PAR® (Passivated Anisotropic Rectifier) TVS family, engineered specifically for automotive load dump and high-energy transient suppression in under-hood and powertrain applications.

FAQ

What is the clamping voltage of the SM6S10HE3/2D at its rated peak pulse current?

The SM6S10HE3/2D has a maximum clamping voltage (VC) of 18.8 V when subjected to its rated peak pulse current of 245 A using a 10/1000 μs waveform. This value is measured at TC = 25 °C and defines the upper voltage limit imposed on the protected circuit during worst-case transient events. The SM6S10HE3/2D maintains this clamping performance while delivering 4600 W of peak pulse power, making it suitable for stringent automotive load dump protection.

Is the SM6S10HE3/2D AEC-Q101 qualified and what does that mean for automotive use?

Yes, the SM6S10HE3/2D is AEC-Q101 qualified, as confirmed in Vishay's official documentation (Document Number: 88384). This qualification validates its reliability under accelerated stress tests including temperature cycling, humidity bias, and high-temperature operating life - specifically for discrete semiconductor devices used in automotive electronics. The SM6S10HE3/2D is therefore approved for safety-critical and mission-relevant applications such as engine control, braking systems, and ADAS power rails.

How does the DO-218AB package of the SM6S10HE3/2D improve thermal performance compared to standard SMC packages?

The DO-218AB package of the SM6S10HE3/2D integrates a large metal heatsink as Terminal 2 (anode), achieving a typical junction-to-case thermal resistance (RθJC) of 0.95 °C/W - significantly lower than standard SMC packages (~2.5–3.5 °C/W). This allows efficient heat transfer directly from the silicon die to the PCB ground plane or external heatsink. In practice, the SM6S10HE3/2D sustains full 4600 W surge capability without thermal derating, unlike smaller packages that require substantial layout derating or forced cooling.

Can the SM6S10HE3/2D be used in bidirectional configurations?

No, the SM6S10HE3/2D is unidirectional only, with polarity defined as heatsink = anode and lead 1 = cathode. It conducts only during positive overvoltage events on the cathode relative to the anode. For bidirectional protection (e.g., AC lines or differential data lines), a separate device such as the SMBJ10CA or a back-to-back SM6S10HE3/2D pair would be required - but the SM6S10HE3/2D itself does not support reverse-biased clamping or symmetrical surge handling.

What is the maximum reverse leakage current of the SM6S10HE3/2D at 10 V and 175 °C?

At 25 °C and VWM = 10 V, the SM6S10HE3/2D exhibits a maximum reverse leakage current (ID) of 15 μA. At elevated temperature, ID increases to ≤250 μA at TJ = 175 °C and VWM = 10 V - a value explicitly specified in the Vishay datasheet (Table "ELECTRICAL CHARACTERISTICS"). This controlled leakage ensures minimal standby power loss while maintaining stable clamping behavior across the full automotive temperature range.

SM6S10HE3/2D Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-218AB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
10V
Voltage - Breakdown (Min):
11.1V
Voltage - Clamping (Max) @ Ipp:
18.8V
Current - Peak Pulse (10/1000µs):
245A
Power - Peak Pulse:
4600W (4.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AB

SM6S10HE3/2D FAQ

1.How can I place an order for SM6S10HE3/2D through Aetrix?

Please submit a Request for Quotation (RFQ) for SM6S10HE3/2D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM6S10HE3/2D reliable?

The price and inventory of SM6S10HE3/2D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6S10HE3/2D is usually 5 days.

3.What payment methods are accepted for SM6S10HE3/2D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6S10HE3/2D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM6S10HE3/2D?

SM6S10HE3/2D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM6S10HE3/2D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM6S10HE3/2D?

For technical support, including SM6S10HE3/2D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6S10HE3/2D requirements.

6.How does Aetrix verify that SM6S10HE3/2D is sourced from the original manufacturer or authorized distributors?

All SM6S10HE3/2D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6S10HE3/2D meets industry standards.

7.What is the process for return or replacement of SM6S10HE3/2D?

All SM6S10HE3/2D units undergo pre-shipment inspection (PSI). If there is an issue with SM6S10HE3/2D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM6S10HE3/2D part is unused and in its original packaging.

Return procedure for SM6S10HE3/2D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM6S10HE3/2D Tags

  • SM6S10HE3/2D
  • SM6S10HE3/2D PDF
  • SM6S10HE3/2D Datasheet
  • SM6S10HE3/2D Specifications
  • SM6S10HE3/2D Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM6S10HE3/2D
  • Buy SM6S10HE3/2D
  • SM6S10HE3/2D Price
  • SM6S10HE3/2D Distributor
  • SM6S10HE3/2D Supplier
  • SM6S10HE3/2D Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER