Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM6S12ATHE3/I

Part No.:
SM6S12ATHE3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-218AC
Datasheet:
AetrixSM6S12ATHE3/I.pdf
Description:
TVS DIODE 12VWM 19.9VC DO218AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,749

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM6S12ATHE3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection in high-reliability 12 V systems. It features a 12 V stand-off voltage (VWM), 13.3–14.7 V breakdown range (VBR), 4600 W peak pulse power (10/1000 μs), 19.9 V clamping voltage at 231 A, and AEC-Q101 qualification for under-hood applications.

For engineers reviewing the SM6S12ATHE3/I datasheet, SM6S12ATHE3/I pinout, SM6S12ATHE3/I application, or SM6S12ATHE3/I equivalent, this device serves as a high-surge-capability, high-temperature-stable TVS diode optimized for ISO 7637-2 compliance in automotive power line protection - especially where TJ = 175 °C operation and low leakage (<10 μA at VWM) are required.

Technical Context

This TVS diode uses passivated anisotropic rectifier technology to achieve stable clamping performance across -55 °C to +175 °C junction temperature. Its DO-218AC package integrates a metal heatsink (anode) for low thermal resistance (RθJC = 0.95 °C/W) and supports high IFSM (600 A) surge handling.

The device operates exclusively in unidirectional mode with polarity defined by heatsink-as-anode configuration. It meets MSL Level 1 per J-STD-020 and passes JESD 201 Class 2 whisker testing, confirming robustness for automated SMT assembly in automotive production environments.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 12 V - Maximum continuous reverse operating voltage before clamping begins; defines system nominal bus rating compatibility.
VBR (min/typ/max) 13.3 / 14.0 / 14.7 V - Breakdown threshold at 5 mA test current; ensures predictable turn-on margin above VWM.
VC @ IPPM 19.9 V at 231 A - Clamping voltage during 10/1000 μs surge; limits downstream IC stress during load dump events.
PPPM (10/1000 μs) 4600 W - Peak pulse power handling capability; enables protection against severe ISO 7637-2 Pulse 5a transients.
ID @ VWM <10 μA at 25 °C - Low reverse leakage preserves battery drain budget in always-on automotive modules.
TJ max. +175 °C - Enables placement near hot engine compartments without derating; validated per AEC-Q101 stress tests.
RθJC 0.95 °C/W - Thermal resistance from junction to case; allows direct heatsinking via PCB copper or chassis contact.

Pinout & Package

Package: DO-218AC - molded surface-mount package with integrated metal heatsink (anode terminal); RoHS-compliant, matte tin-plated leads; UL 94 V-0 rated compound.

Pin/Terminal Circuit Role Design Meaning
Lead 1 Cathode Connected to protected circuit node; carries transient current into the device during clamping.
Lead 2 / Metal Heatsink Anode Primary thermal path and electrical return; must be soldered to large copper area or chassis for optimal power dissipation.

Key Features

Feature Design Value
Junction passivation Optimized anisotropic rectifier process ensures stable VBR over lifetime and temperature cycling.
AEC-Q101 qualification Validated for automotive under-hood use including HTOL, TC, UHAST, and ESD stress conditions.
ISO 7637-2 compliance Meets Pulse 5a (load dump) requirements when mounted with proper PCB thermal design.
MSL Level 1 rating Supports reflow up to 245 °C peak without moisture-induced damage; no bake-out required pre-assembly.
JESD 201 Class 2 whisker resistance Prevents tin whisker growth on leads under high humidity and bias, ensuring long-term solder joint integrity.

Applications

Automotive Body Control Module (BCM) Engine Control Unit (ECU) Power Input

Use Scenario: Protects microcontroller power rails from alternator load dump spikes during battery disconnect/reconnect events.

IC Role / Device Role: Unidirectional TVS clamp placed between battery feed and input filter capacitor.

Use Value: Limits transient voltage to ≤19.9 V at 231 A, preventing damage to 16 V-rated DC/DC converters and LDOs.

Use Scenario: Shields ECU main 12 V supply against ISO 7637-2 Pulse 5a surges during vehicle cranking and alternator regulation faults.

IC Role / Device Role: Primary front-end surge suppression element upstream of input fuse and bulk capacitance.

Use Value: Withstands 4600 W pulses while maintaining <10 μA leakage at 12 V, minimizing standby current impact.

ADAS Camera Power Interface Electric Power Steering (EPS) Motor Driver Supply

Use Scenario: Safeguards image sensor and SerDes ICs in rear-view or surround-view cameras exposed to harsh vehicle power noise.

IC Role / Device Role: Secondary protection stage after primary LC filter, placed adjacent to camera module connector.

Use Value: 175 °C junction rating allows mounting directly on compact camera PCBs near heat-generating components.

Use Scenario: Guards gate driver ICs and current sense amplifiers in EPS motor control boards from inductive switching transients.

IC Role / Device Role: High-energy clamping device on 12 V auxiliary rail feeding motor driver logic and isolation supplies.

Use Value: 0.95 °C/W RθJC enables effective thermal coupling to aluminum heatsink plate, sustaining repeated surge duty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SM6S12AHM3 Same VWM/VBR/VC specs; HM3 suffix indicates halogen-free molding compound and enhanced MSL 1 reliability vs. HE3. Preferred for new designs targeting extended lifecycle and stricter environmental compliance (e.g., EU OEM Tier 1 programs). Select SM6S12AHM3 when halogen-free content and latest Vishay manufacturing revision are mandatory.
SMAJ12A Lower PPPM (400 W), smaller SMA package (RθJC ≈ 45 °C/W), no AEC-Q101 qualification, higher ID (50 μA). Limited to non-automotive industrial or consumer applications with milder surge profiles and lower ambient temperatures. Use SMAJ12A only in cost-sensitive, non-automotive designs where 4600 W surge immunity and 175 °C operation are not required.

Compared with SM6S12AHM3, the SM6S12ATHE3/I offers identical electrical protection but lacks halogen-free certification and updated MSL assurance; versus SMAJ12A, it delivers >11× higher surge power, 47× better thermal resistance, and automotive-grade reliability - making it irreplaceable in demanding load dump scenarios.

Availability

SM6S12ATHE3/I is available at Aetrix Electronics and suitable for automotive body electronics, engine management systems, and ADAS power interfaces requiring stable component supply with full traceability and long-term availability planning.

Supply support for SM6S12ATHE3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.

The SM6SxxAT family was engineered specifically for automotive load dump protection, combining high-temperature stability, AEC-Q101 validation, and DO-218AC thermal performance to replace older axial-leaded TVS solutions in space-constrained ECUs.

FAQ

What is the maximum clamping voltage of the SM6S12ATHE3/I during a 10/1000 μs surge?

The SM6S12ATHE3/I clamps to a maximum of 19.9 V at its rated peak pulse current of 231 A under 10/1000 μs waveform conditions. This value is guaranteed per the Vishay datasheet (Document Number: 87735, page 2) and represents the upper limit of voltage seen by downstream circuitry during worst-case transients - critical for ensuring compatibility with 20 V-rated input stages.

Is the SM6S12ATHE3/I qualified for automotive applications?

Yes, the SM6S12ATHE3/I is AEC-Q101 qualified and explicitly intended for automotive use. Its qualification covers high-temperature operation up to +175 °C, humidity testing, mechanical shock, and board-level reliability - all verified per the standard's stress test conditions. The HE3 suffix denotes RoHS compliance and AEC-Q101 qualification per Vishay's ordering nomenclature.

What does the "HE3" suffix mean in SM6S12ATHE3/I?

The "HE3" suffix in SM6S12ATHE3/I identifies a RoHS-compliant, AEC-Q101-qualified version with matte tin-plated leads that meet J-STD-002 and JESD 22-B102 solderability standards. It also satisfies JESD 201 Class 2 whisker resistance, ensuring long-term reliability in automotive production environments where lead-free reflow and thermal cycling are routine.

Can the SM6S12ATHE3/I replace the SM6S12AHM3 in an existing design?

The SM6S12ATHE3/I shares identical electrical specifications and DO-218AC mechanical dimensions with the SM6S12AHM3, but differs in material composition: HE3 uses standard molding compound, while HM3 is halogen-free and reflects a newer manufacturing revision. For legacy production or cost-sensitive builds, SM6S12ATHE3/I remains functionally compatible - though new designs should prefer HM3 for environmental compliance.

What is the thermal resistance from junction to case (RθJC) for the SM6S12ATHE3/I?

The SM6S12ATHE3/I has a typical thermal resistance of 0.95 °C/W from junction to case, measured per the Vishay datasheet (page 3, Thermal Characteristics table). This low value is enabled by the DO-218AC package's integrated metal heatsink (anode terminal), which must be soldered to ≥100 mm² of 2 oz copper for effective heat transfer in high-duty-cycle surge applications.

SM6S12ATHE3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-218AC
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
12V
Voltage - Breakdown (Min):
13.3V
Voltage - Clamping (Max) @ Ipp:
19.9V
Current - Peak Pulse (10/1000µs):
231A
Power - Peak Pulse:
4600W (4.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AC

SM6S12ATHE3/I FAQ

1.How can I place an order for SM6S12ATHE3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SM6S12ATHE3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM6S12ATHE3/I reliable?

The price and inventory of SM6S12ATHE3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6S12ATHE3/I is usually 5 days.

3.What payment methods are accepted for SM6S12ATHE3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6S12ATHE3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM6S12ATHE3/I?

SM6S12ATHE3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM6S12ATHE3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM6S12ATHE3/I?

For technical support, including SM6S12ATHE3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6S12ATHE3/I requirements.

6.How does Aetrix verify that SM6S12ATHE3/I is sourced from the original manufacturer or authorized distributors?

All SM6S12ATHE3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6S12ATHE3/I meets industry standards.

7.What is the process for return or replacement of SM6S12ATHE3/I?

All SM6S12ATHE3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM6S12ATHE3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM6S12ATHE3/I part is unused and in its original packaging.

Return procedure for SM6S12ATHE3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM6S12ATHE3/I Tags

  • SM6S12ATHE3/I
  • SM6S12ATHE3/I PDF
  • SM6S12ATHE3/I Datasheet
  • SM6S12ATHE3/I Specifications
  • SM6S12ATHE3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM6S12ATHE3/I
  • Buy SM6S12ATHE3/I
  • SM6S12ATHE3/I Price
  • SM6S12ATHE3/I Distributor
  • SM6S12ATHE3/I Supplier
  • SM6S12ATHE3/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER