Vishay General Semiconductor - Diodes Division SM6S13AHM3/I
- Part No.:
- SM6S13AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AC
- Datasheet:
-
SM6S13AHM3/I.pdf
- Description:
- TVS DIODE 13VWM 21.5VC DO218AC
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SM6S13AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 13 V standoff voltage (VWM), 15.2 V nominal breakdown (VBR), 4600 W peak pulse power (10/1000 μs), and AEC-Q101 qualified for automotive load dump protection. It operates from −55 °C to +175 °C with low leakage (≤10 μA at VWM) and clamps to 21.5 V at 150 A IPPM.
For engineers reviewing the SM6S13AHM3/I datasheet, SM6S13AHM3/I pinout, SM6S13AHM3/I application, or SM6S13AHM3/I equivalent, key selection criteria include its 175 °C junction rating, ISO7637-2 compliance for automotive transients, DO-218AB thermal performance (RθJM = 0.45 °C/W), and unidirectional polarity with heatsink-as-anode configuration.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to deliver high-reliability surge suppression under extreme thermal stress. Its junction design enables stable operation up to TJ = 175 °C and meets MSL Level 1 (245 °C peak reflow), making it suitable for under-hood automotive electronics where thermal cycling and transient immunity are critical.
The device exhibits a positive temperature coefficient of VBR (0.076 %/°C), enabling predictable voltage shift over temperature. Clamping behavior is characterized by VC = 21.5 V at IPPM = 150 A (10/1000 μs), with low forward voltage (VF ≤ 1.9 V at 100 A) and high IFSM = 600 A for robustness against repetitive surges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 13 V - Maximum continuous reverse operating voltage before conduction begins; defines system bus voltage compatibility. |
| VBR (nom) | 15.2 V - Breakdown voltage at 5 mA test current; ensures reliable triggering above normal operating voltage. |
| VC @ IPPM | 21.5 V at 150 A - Clamping voltage during 10/1000 μs surge; determines protected circuit's maximum transient exposure. |
| PPPM (10/1000 μs) | 4600 W - Peak pulse power handling; supports high-energy load dump events per ISO7637-2. |
| TJ max | +175 °C - Maximum junction temperature; enables placement in high-temperature automotive zones without derating. |
| Polarity | Unidirectional - Anode connected to heatsink; requires correct PCB orientation for proper transient shunting path. |
| RθJM | 0.45 °C/W - Junction-to-mount thermal resistance; enables efficient heat transfer to PCB copper pour or metal chassis. |
Pinout & Package
Package: DO-218AB - Surface-mount molded case with matte tin-plated leads, UL 94 V-0 rated, AEC-Q101 qualified, and JESD201 Class 2 whisker compliant. Heatsink tab serves as anode terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink Tab) | Current entry point during clamping | Must be soldered to large copper area or metal chassis for thermal and electrical performance; polarity-critical connection. |
| Cathode (Lead 1) | Current exit point during clamping | Connected to protected line (e.g., 12 V rail); forms low-impedance path to ground when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier structure reduces leakage drift and improves long-term stability at 175 °C. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including HTGB, TCT, and HTRB testing per stress requirements. |
| ISO7637-2 compliance | Meets Pulse 5a/b load dump test profiles for 12 V systems, enabling direct use in vehicle ECU front-end protection. |
| MSL Level 1 rating | Supports standard SMT reflow up to 245 °C peak without moisture-induced damage or delamination. |
| Low clamping ratio (VC/VBR) | 1.41 - Tight voltage margin between trigger and clamp ensures minimal overvoltage stress on downstream ICs. |
Applications
| Automotive Engine Control Unit (ECU) | Body Control Module (BCM) |
|---|---|
Use Scenario: Protecting microcontroller power rails and CAN transceiver interfaces from alternator load dump transients during battery disconnect events. IC Role / Device Role / Timing Role: Unidirectional TVS placed between 12 V supply and ground, triggered within nanoseconds to clamp voltage spikes to safe levels. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V logic ICs by limiting transient exposure to ≤21.5 V at 150 A surge current. | Use Scenario: Safeguarding LIN bus transceivers and power management ICs against switching noise from solenoids, relays, and motors in door modules and lighting controls. IC Role / Device Role / Timing Role: Fast-response overvoltage clamp on 12 V input rail, absorbing energy from inductive kickback without affecting signal integrity. Use Value: Maintains functional safety compliance (ISO 26262 ASIL-B) by ensuring no single-point failure causes bus shutdown or erroneous actuation. |
| Advanced Driver Assistance Systems (ADAS) Camera Power Input | Electric Power Steering (EPS) Motor Driver Supply |
Use Scenario: Shielding image sensor SoCs and serializer ICs from voltage surges induced by nearby high-current actuators in ADAS camera housings. IC Role / Device Role / Timing Role: Primary overvoltage suppression element on main 12 V input, coordinated with ceramic capacitors for sub-100 ns response. Use Value: Enables uninterrupted video streaming during engine cranking or jump-start conditions by sustaining <10 μA leakage at 13 V and fast turn-on below 15.2 V. | Use Scenario: Protecting gate drivers and current-sense amplifiers in EPS motor control boards exposed to high di/dt transients during torque assist transitions. IC Role / Device Role / Timing Role: High-power transient absorber on high-side FET supply rail, leveraging DO-218AB thermal mass to dissipate 4600 W pulses. Use Value: Extends system lifetime by preventing cumulative degradation of analog front-end components under repeated 600 A surge stress (IFSM rating). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ13A | Lower PPPM (400 W vs. 4600 W), SMA package (RθJA ≈ 100 °C/W vs. 0.45 °C/W), non-AEC-Q101 | Not suitable for automotive load dump; limited to low-energy board-level ESD or secondary protection | Select only for cost-sensitive industrial PCBs where surge energy is <500 W and ambient temperature stays <105 °C. |
| SM6S13AHM3 | Same electrical specs and DO-218AB package; differs only in packaging - SM6S13AHM3/I uses 13" tape/reel with anode-toward-sprocket-hole orientation, while SM6S13AHM3 may use alternate reel coding or bulk packaging | No functional or application difference; identical mounting, thermal, and electrical behavior | Preferred for automated SMT assembly requiring verified tape orientation and traceable lot control per AEC-Q101 production release. |
Compared with SMAJ13A and SM6S13AHM3, the SM6S13AHM3/I delivers 11.5× higher surge power handling and automotive-grade qualification-making it the sole choice for primary load dump protection in safety-critical 12 V systems, while SM6S13AHM3 offers identical performance in alternate packaging formats.
Availability
SM6S13AHM3/I is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, and ADAS camera power inputs requiring stable component supply across extended temperature ranges and high-reliability production cycles.
Supply support for SM6S13AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM6SxxA family was engineered specifically for automotive-grade transient suppression, emphasizing 175 °C operation, ISO7637-2 compliance, and robust thermal coupling via the DO-218AB heatsink-anode architecture.
FAQ
What is the maximum clamping voltage of the SM6S13AHM3/I under a 10/1000 μs surge?
The SM6S13AHM3/I clamps to a maximum of 21.5 V when subjected to a 150 A peak pulse current with a 10/1000 μs waveform. This value is specified in the Electrical Characteristics table at TC = 25 °C and represents the upper limit of voltage seen by protected circuitry during standardized surge events. The SM6S13AHM3/I maintains this clamping performance across its full operating temperature range due to its controlled VBR temperature coefficient.
Is the SM6S13AHM3/I suitable for use in automotive load dump protection?
Yes, the SM6S13AHM3/I is explicitly designed for automotive load dump protection and meets ISO7637-2 Pulse 5a/b requirements. Its 4600 W peak pulse power rating, 175 °C junction capability, AEC-Q101 qualification, and DO-218AB package with heatsink-as-anode configuration make the SM6S13AHM3/I appropriate for front-end protection in ECUs, BCMs, and ADAS modules where sustained high-energy transients occur.
What does the "HM3/I" suffix indicate in SM6S13AHM3/I?
The "HM3/I" suffix in SM6S13AHM3/I denotes AEC-Q101 qualification (H), RoHS-compliant and halogen-free construction (E3), and tape-and-reel packaging with anode oriented toward the sprocket hole (I). The "M3" segment confirms compliance with Vishay's material and environmental standards, while the "/I" specifies the delivery format per the Ordering Information Table in document 88384.
How does the thermal performance of the SM6S13AHM3/I compare to standard SMA packages?
The SM6S13AHM3/I in DO-218AB achieves RθJM = 0.45 °C/W, vastly outperforming SMA packages (e.g., SMAJ13A) with RθJA ≈ 100 °C/W. This allows the SM6S13AHM3/I to sustain 4600 W surges without thermal runaway, whereas SMA devices require significant derating above 105 °C ambient. The heatsink-tab anode of the SM6S13AHM3/I enables direct thermal coupling to PCB copper or chassis, a capability absent in leadframe-only SMA packages.
Does the SM6S13AHM3/I have bidirectional polarity?
No, the SM6S13AHM3/I is unidirectional only, with the heatsink tab serving as the anode and Lead 1 as the cathode. This polarity is fixed and must be observed during PCB layout-reversing connections will prevent proper clamping during positive transients and may cause catastrophic failure. The datasheet explicitly states "Available in unidirectional polarity only" and shows the DO-218AB marking and orientation diagram confirming anode-heatsink configuration for the SM6S13AHM3/I.
SM6S13AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 14.4V
- Voltage - Clamping (Max) @ Ipp:
- 21.5V
- Current - Peak Pulse (10/1000µs):
- 214A
- Power - Peak Pulse:
- 4600W (4.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AC
SM6S13AHM3/I FAQ
1.How can I place an order for SM6S13AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM6S13AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM6S13AHM3/I reliable?
The price and inventory of SM6S13AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6S13AHM3/I is usually 5 days.
3.What payment methods are accepted for SM6S13AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6S13AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM6S13AHM3/I?
SM6S13AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM6S13AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM6S13AHM3/I?
For technical support, including SM6S13AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6S13AHM3/I requirements.
6.How does Aetrix verify that SM6S13AHM3/I is sourced from the original manufacturer or authorized distributors?
All SM6S13AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6S13AHM3/I meets industry standards.
7.What is the process for return or replacement of SM6S13AHM3/I?
All SM6S13AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM6S13AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM6S13AHM3/I part is unused and in its original packaging.
Return procedure for SM6S13AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM6S13AHM3/I Tags

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DESD3V3E1BL-7B
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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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