Vishay General Semiconductor - Diodes Division SM6S22AHM3/I
- Part No.:
- SM6S22AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AC
- Datasheet:
-
SM6S22AHM3/I.pdf
- Description:
- TVS DIODE 22VWM 35.5VC DO218AC
- Quantity:
- Payment:

- Shipping:

Inventory:8,273
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Product details
Overview
SM6S22AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 22 V stand-off voltage (VWM), 25.7 V nominal breakdown voltage (VBR), 4600 W peak pulse power (10/1000 μs), 130 A peak pulse current, and 175 °C maximum junction temperature - designed for automotive load dump protection in 12 V systems.
For engineers reviewing the SM6S22AHM3/I datasheet, SM6S22AHM3/I pinout, SM6S22AHM3/I application, or SM6S22AHM3/I equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, and direct alternative part guidance for high-reliability automotive circuit protection design.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology with junction passivation optimized for stable clamping under repetitive surge stress. Its unidirectional polarity and heatsink-anode configuration enable efficient thermal coupling to PCB copper when mounted on infinite heatsink or standard FR4 layout.
It meets ISO 7637-2 load dump surge requirements and J-STD-020 MSL Level 1 (245 °C peak reflow), with 0.45 °C/W junction-to-mount thermal resistance enabling robust operation at TJ = 175 °C in engine bay environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 22 V - Maximum continuous reverse operating voltage before clamping begins; defines system-level overvoltage immunity threshold in 12 V automotive circuits. |
| VBR (nom) | 25.7 V - Breakdown voltage at 5 mA test current; ensures reliable turn-on during transients while avoiding false triggering during normal battery ripple. |
| VC @ IPPM | 35.5 V - Clamping voltage at 130 A peak pulse; limits downstream IC voltage stress below 40 V during ISO 7637-2 load dump events. |
| PPPM (10/1000 μs) | 4600 W - Peak pulse power handling capacity; supports single-event energy absorption up to 4.6 J without degradation. |
| TJ max | +175 °C - Maximum junction temperature rating; enables placement near heat sources (e.g., power modules) without derating in under-hood applications. |
| IFSM | 600 A - Non-repetitive forward surge current rating; withstands high-current inductive kickback from solenoids or motors without bond wire failure. |
| RθJM | 0.45 °C/W - Junction-to-mount thermal resistance; allows direct thermal path to heatsinked PCB copper, critical for sustained power dissipation in automotive ECUs. |
Pinout & Package
Package: DO-218AB - Surface-mount molded case with matte tin-plated leads, UL 94 V-0 flammability rating, and anode-connected metal heatsink tab for enhanced thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink Tab) | Current entry point during clamping | Electrically and thermally connected to PCB copper pour; must be soldered to ≥100 mm² thermal pad for rated RθJM = 0.45 °C/W performance. |
| Cathode (Lead 1) | Current exit point during clamping | Connected to protected line (e.g., battery rail); polarity marking visible on top surface per DO-218AB outline. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including HTOL, TCT, and ESD testing - required for inclusion in ASIL-B/C powertrain and body control modules. |
| Junction passivation optimized design | Reduces leakage drift over lifetime; ID ≤10 μA at VWM and TJ = 175 °C ensures minimal standby current drain in always-on vehicle networks. |
| Meets ISO 7637-2 load dump specification | Clamps 12 V system transients up to 60 V/100 ms exponential waveform without failure - satisfies OEM requirements for alternator load dump immunity. |
| MSL Level 1 (245 °C peak) | Compatible with standard lead-free reflow profiles without popcorn cracking or delamination - eliminates special handling in SMT production lines. |
| Low VF = 1.9 V @ 100 A | Minimizes forward conduction loss during bidirectional fault conditions; reduces I²R heating during high-current surge events. |
Applications
| Automotive Load Dump Protection | Engine Control Unit (ECU) Power Input |
|---|---|
Use Scenario: Protecting 12 V battery-fed electronics from alternator-induced load dump transients up to 60 V/100 ms. IC Role / Device Role: Primary clamping device placed between battery rail and DC/DC input stage. Use Value: Limits voltage seen by downstream regulators to ≤35.5 V, preventing overvoltage shutdown or damage to 40 V-rated buck converters. |
Use Scenario: Safeguarding microcontroller power supply inputs in engine management systems exposed to cranking and ignition noise. IC Role / Device Role: Secondary TVS on regulated 5 V or 3.3 V rails after primary DC/DC conversion. Use Value: Absorbs coupled transients from nearby solenoid drivers with <10 ns response time, maintaining MCU reset integrity during cold starts. |
| Body Control Module (BCM) LIN Bus Interface | ADAS Camera Power Rail |
Use Scenario: Shielding LIN transceiver supply pins from battery line disturbances during door lock actuation or window motor operation. IC Role / Device Role: Localized TVS adjacent to LIN PHY IC power pins. Use Value: Maintains VCC stability within ±5 % of nominal during 100 A inductive spikes, preventing LIN frame corruption or bus reset. |
Use Scenario: Protecting 12 V input to image sensor power module in rear-view or surround-view cameras mounted near chassis ground points. IC Role / Device Role: Front-end TVS on camera module PCB before DC/DC conversion. Use Value: Withstands repeated 4600 W surges without parameter shift, ensuring >15-year field life in vibration-prone mounting locations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM6S22AHM3 | No /I suffix - bulk packaging instead of tape-and-reel; identical electrical and thermal specs. | Same automotive load dump protection capability; differs only in delivery format. | Select SM6S22AHM3/I for automated SMT assembly requiring 750-unit 13″ reel; choose SM6S22AHM3 for manual prototyping or low-volume hand-soldering. |
| SMAJ22AHE3_A/H | DO-214AC (SMA) package; lower PPPM = 400 W; higher RθJA = 65 °C/W; same VWM/VBR. | Limited to lower-energy transients; unsuitable for full ISO 7637-2 load dump; not AEC-Q101 qualified. | Use SMAJ22AHE3_A/H only in non-automotive industrial applications where surge energy ≤400 W and ambient temperature remains <105 °C. |
Compared with SM6S22AHM3/I, SM6S22AHM3 offers identical protection performance in bulk form, while SMAJ22AHE3_A/H provides cost-effective but lower-energy clamping in legacy SMA footprint - neither is pin-compatible due to DO-218AB vs. DO-214AC mechanical mismatch.
Availability
SM6S22AHM3/I is available at Aetrix Electronics and suitable for automotive load dump protection, engine control unit (ECU) power input hardening, and ADAS camera power rail stabilization requiring stable component supply across extended product lifecycles.
Supply support for SM6S22AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM6SxxA series was engineered specifically for AEC-Q101-compliant automotive transient suppression, emphasizing high-temperature stability (TJ = 175 °C), ISO 7637-2 compliance, and DO-218AB thermal performance in under-hood environments.
FAQ
What is the clamping voltage of SM6S22AHM3/I at its rated peak pulse current?
The SM6S22AHM3/I has a maximum clamping voltage (VC) of 35.5 V at 130 A peak pulse current (IPPM) under 10/1000 μs waveform conditions. This value is measured per JEDEC standards and guarantees that downstream circuitry sees no more than 35.5 V during worst-case surge events - a critical parameter for protecting 40 V-rated DC/DC converters in automotive applications. The SM6S22AHM3/I maintains this clamping performance across its full operating temperature range.
Is SM6S22AHM3/I qualified for automotive use per AEC-Q101?
Yes, SM6S22AHM3/I is fully AEC-Q101 qualified, as confirmed in Vishay's official documentation (Document Number 88384). It undergoes stress testing including high-temperature operating life (HTOL), temperature cycling (TCT), and electrostatic discharge (ESD) per AEC-Q101 Rev G. This qualification makes SM6S22AHM3/I suitable for safety-critical automotive subsystems such as powertrain control, body electronics, and ADAS modules where long-term reliability under thermal and electrical stress is mandatory.
What does the "/I" suffix mean in SM6S22AHM3/I?
The "/I" suffix in SM6S22AHM3/I denotes tape-and-reel packaging in 13-inch diameter reels containing 750 units, with anode orientation toward the sprocket hole - optimized for automated SMT placement. This packaging format ensures consistent feeding in high-speed pick-and-place machines and complies with IPC-7351 footprint standards. The "/I" does not affect electrical or thermal specifications; SM6S22AHM3/I and SM6S22AHM3 share identical die, construction, and performance characteristics.
Can SM6S22AHM3/I replace SM6S22A in existing designs?
SM6S22AHM3/I is a direct functional and mechanical replacement for SM6S22A, with identical VWM (22 V), VBR (25.7 V), VC (35.5 V), and DO-218AB package dimensions. The "H" indicates AEC-Q101 qualification and "M3" denotes RoHS-compliant, halogen-free construction - enhancements over legacy SM6S22A. No PCB layout changes are needed, but designers should verify that the improved thermal performance (RθJM = 0.45 °C/W) aligns with their thermal management strategy.
Does SM6S22AHM3/I meet ISO 7637-2 load dump requirements?
Yes, SM6S22AHM3/I is explicitly rated to meet ISO 7637-2 load dump test conditions, including Pulse 5a (alternator load dump) with 10 ms exponential waveform up to 60 V. Vishay's datasheet confirms compliance through characterization curves (Fig. 3) and specifies clamping behavior under these conditions. The 4600 W peak pulse power rating and 175 °C junction temperature capability ensure robust performance during repeated load dump events encountered in real-world 12 V automotive systems.
SM6S22AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 22V
- Voltage - Breakdown (Min):
- 24.4V
- Voltage - Clamping (Max) @ Ipp:
- 35.5V
- Current - Peak Pulse (10/1000µs):
- 130A
- Power - Peak Pulse:
- 4600W (4.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AC
SM6S22AHM3/I FAQ
1.How can I place an order for SM6S22AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM6S22AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM6S22AHM3/I reliable?
The price and inventory of SM6S22AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6S22AHM3/I is usually 5 days.
3.What payment methods are accepted for SM6S22AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6S22AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM6S22AHM3/I?
SM6S22AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM6S22AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM6S22AHM3/I?
For technical support, including SM6S22AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6S22AHM3/I requirements.
6.How does Aetrix verify that SM6S22AHM3/I is sourced from the original manufacturer or authorized distributors?
All SM6S22AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6S22AHM3/I meets industry standards.
7.What is the process for return or replacement of SM6S22AHM3/I?
All SM6S22AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM6S22AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM6S22AHM3/I part is unused and in its original packaging.
Return procedure for SM6S22AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM6S22AHM3/I Tags

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onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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