Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM6S30AHE3_A/I

Part No.:
SM6S30AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-218AB
Datasheet:
AetrixSM6S30AHE3_A/I.pdf
Description:
TVS DIODE 30VWM 48.4VC DO218AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:689

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM6S30AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 30 V stand-off voltage (VWM), 33.3–36.8 V breakdown (VBR), 4600 W peak pulse power (10/1000 μs), and 175 °C junction temperature - designed for automotive load dump protection in engine control units and body electronics.

For engineers reviewing the SM6S30AHE3_A/I datasheet, SM6S30AHE3_A/I pinout, SM6S30AHE3_A/I application, or SM6S30AHE3_A/I equivalent, key selection criteria include AEC-Q101 qualification, unidirectional polarity, low leakage (<10 μA at VWM), 95 A clamping current at 48.4 V, and DO-218AB thermal performance with RθJM = 0.45 °C/W.

Technical Context

This TVS diode uses passivated anisotropic rectifier technology to deliver high-temperature stability up to TJ = 175 °C and meets ISO 7637-2 surge requirements for automotive load dump transients. Its unidirectional configuration provides reverse-biased clamping only, with heatsink tied to anode per mechanical layout.

The device exhibits low forward voltage drop (VF ≤ 1.9 V at 100 A) and high surge capability (IFSM = 600 A, 8.3 ms half-sine), enabling robust protection of 12 V automotive power rails against repetitive and non-repetitive overvoltage events without degradation under thermal stress.

Key Specifications

ParameterValue and Actual Design Meaning
VWM30 V - maximum continuous reverse operating voltage before clamping begins
VBR min/max33.3 V / 36.8 V at 5 mA - ensures reliable turn-on within defined tolerance band during transients
VC @ IPPM48.4 V at 95 A (10/1000 μs) - limits downstream voltage stress during worst-case surge
PPPM4600 W (10/1000 μs) - sustains high-energy load dump pulses without failure
TJ max175 °C - supports operation in under-hood environments and AEC-Q101 compliance
RθJM0.45 °C/W - enables efficient heat transfer to metal heatsink for sustained power dissipation
PolarityUnidirectional - anode-connected heatsink configuration simplifies PCB thermal design

Pinout & Package

Package: DO-218AB - molded surface-mount case with matte tin-plated leads, UL 94 V-0 rating, MSL Level 1, and anode-connected metal heatsink (Lead 2).

Pin/TerminalCircuit RoleDesign Meaning
Lead 1CathodeConnected to protected circuit node; carries transient current into device during clamping
Lead 2 / Metal HeatsinkAnodePrimary thermal path and electrical return; must be soldered to large copper area for RθJM = 0.45 °C/W

Key Features

FeatureDesign Value
Junction passivationOptimized anisotropic rectifier structure ensures stable VBR over lifetime and temperature
AEC-Q101 qualificationValidated reliability for automotive electronics including engine control, lighting, and ADAS modules
Low leakage ID<10 μA at 30 V and 25 °C - minimizes standby power loss in always-on systems
ISO 7637-2 complianceMeets Pulse 5a/b load dump test conditions for 12 V vehicle electrical systems
MSL Level 1Reflow-compatible up to 245 °C peak - supports standard SMT assembly without moisture sensitivity concerns

Applications

Engine Control Unit (ECU) Power ProtectionAutomotive Lighting Module

Use Scenario: Protecting microcontroller power supply from alternator load dump surges during battery disconnection.

IC Role / Device Role / Timing Role: Unidirectional TVS clamps reverse-polarity transients on 12 V rail before they reach LDOs and MCU inputs.

Use Value: Limits clamped voltage to 48.4 V at 95 A, preventing damage to 5 V/3.3 V regulators downstream while sustaining 175 °C junction temperature.

Use Scenario: Safeguarding LED driver ICs in headlamp assemblies exposed to switching noise and load dump.

IC Role / Device Role / Timing Role: Fast-response transient suppressor placed at input stage to absorb energy from inductive kickback and ISO 7637-2 pulses.

Use Value: 4600 W peak pulse power rating handles 10/1000 μs surges without derating, ensuring long-term reliability in sealed lamp housings.

Body Control Module (BCM)Infotainment Power Rail

Use Scenario: Shielding CAN transceivers and sensor interfaces from coupled transients on shared 12 V supply lines.

IC Role / Device Role / Timing Role: Standoff voltage of 30 V allows normal operation during cranking (down to ~9 V), activating only above safe threshold.

Use Value: Low 10 μA leakage at VWM preserves battery life in sleep-mode BCM functions over extended parking periods.

Use Scenario: Protecting DC-DC converters feeding audio processors and display controllers from ignition-induced spikes.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on main 12 V input, coordinated with secondary ceramic capacitors for sub-μs response.

Use Value: DO-218AB package with metal heatsink delivers 0.45 °C/W thermal resistance, maintaining safe TJ during repeated surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SM6S30AHM3Same VWM/VBR/PPPM specs; HM3 suffix indicates enhanced whisker resistance and updated material categorizationIdentical automotive use cases; preferred for new designs due to active status vs. Not For New Designs noticeSelect SM6S30AHM3 when initiating new production - it replaces SM6S30AHE3_A/I with identical electrical behavior and improved process control
SMA6J30ALower PPPM (600 W), smaller SMA package (RθJA = 65 °C/W), same VWM/VBR but reduced surge marginSuitable for cost-sensitive consumer or industrial applications where full 4600 W load dump immunity is not requiredChoose SMA6J30A only for non-automotive applications with lower surge exposure and tighter board space constraints

Compared with SM6S30AHE3_A/I, SM6S30AHM3 offers identical protection performance with updated qualification and material compliance, while SMA6J30A trades surge capacity and thermal robustness for size and cost - making the former a direct upgrade path and the latter a functional alternative only in de-rated contexts.

Availability

SM6S30AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECU power protection, body control module design, and infotainment system development requiring stable component supply across extended production lifecycles.

Supply support for SM6S30AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on automotive, industrial, and computing applications.

The SM6SxxA series is part of Vishay's PAR® transient voltage suppressor family, engineered specifically for high-reliability automotive load dump protection with AEC-Q101 qualification and 175 °C operation.

FAQ

What is the maximum clamping voltage of the SM6S30AHE3_A/I under a 10/1000 μs surge?

The SM6S30AHE3_A/I has a maximum clamping voltage (VC) of 48.4 V when subjected to its rated peak pulse current of 95 A using the 10/1000 μs waveform. This value is measured at TC = 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The SM6S30AHE3_A/I maintains this clamping performance across its specified operating temperature range, supporting robust protection in automotive environments.

Is the SM6S30AHE3_A/I qualified for automotive applications?

Yes, the SM6S30AHE3_A/I is AEC-Q101 qualified and explicitly designed for automotive use, including load dump protection per ISO 7637-2. It operates reliably from –55 °C to +175 °C, features MSL Level 1 moisture sensitivity, and uses matte tin-plated leads compliant with J-STD-002 and JESD 22-B102. The SM6S30AHE3_A/I also meets JEDEC thermal standards and is categorized under Vishay's automotive-grade material specification.

What does the HE3_A/I suffix mean in SM6S30AHE3_A/I?

The HE3_A/I suffix in SM6S30AHE3_A/I denotes RoHS-compliant, halogen-free construction (E3), AEC-Q101 qualification (H), ±5 % breakdown voltage tolerance and unidirectional polarity (A), and packaging in 13″ tape-and-reel with anode orientation toward sprocket holes (I). The "3" indicates standard V-type molding, and "A" in the revision field confirms the initial qualified version. This full suffix identifies the SM6S30AHE3_A/I as a production-ready, automotive-grade variant.

Can the SM6S30AHE3_A/I replace older SM6S30A variants?

The SM6S30AHE3_A/I is functionally compatible with earlier SM6S30A versions sharing the same DO-218AB package and electrical specifications, but it adds RoHS compliance, halogen-free materials, and AEC-Q101 qualification. While pinout and mounting are identical, the SM6S30AHE3_A/I should be verified for thermal interface compatibility due to its anode-heatsink construction. Designers should consult Vishay's replacement guidance before substituting in legacy systems.

What is the thermal resistance from junction to heatsink for SM6S30AHE3_A/I?

The SM6S30AHE3_A/I has a typical thermal resistance from junction to mounting base (RθJM) of 0.45 °C/W, measured per JEDEC 51-14 using the Transient Dual Interface Method. This low value is achieved via direct metal heatsink contact (Lead 2), requiring proper soldering to a large copper area. The SM6S30AHE3_A/I's RθJM enables effective heat dissipation during repeated surge events, supporting sustained operation at TJ = 175 °C in demanding automotive applications.

SM6S30AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-218AB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
30V
Voltage - Breakdown (Min):
33.3V
Voltage - Clamping (Max) @ Ipp:
48.4V
Current - Peak Pulse (10/1000µs):
95A
Power - Peak Pulse:
4600W (4.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AB

SM6S30AHE3_A/I FAQ

1.How can I place an order for SM6S30AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SM6S30AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM6S30AHE3_A/I reliable?

The price and inventory of SM6S30AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6S30AHE3_A/I is usually 5 days.

3.What payment methods are accepted for SM6S30AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6S30AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM6S30AHE3_A/I?

SM6S30AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM6S30AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM6S30AHE3_A/I?

For technical support, including SM6S30AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6S30AHE3_A/I requirements.

6.How does Aetrix verify that SM6S30AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All SM6S30AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6S30AHE3_A/I meets industry standards.

7.What is the process for return or replacement of SM6S30AHE3_A/I?

All SM6S30AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM6S30AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM6S30AHE3_A/I part is unused and in its original packaging.

Return procedure for SM6S30AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM6S30AHE3_A/I Tags

  • SM6S30AHE3_A/I
  • SM6S30AHE3_A/I PDF
  • SM6S30AHE3_A/I Datasheet
  • SM6S30AHE3_A/I Specifications
  • SM6S30AHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM6S30AHE3_A/I
  • Buy SM6S30AHE3_A/I
  • SM6S30AHE3_A/I Price
  • SM6S30AHE3_A/I Distributor
  • SM6S30AHE3_A/I Supplier
  • SM6S30AHE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER