Vishay General Semiconductor - Diodes Division SM6S36AHM3/I
- Part No.:
- SM6S36AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AC
- Datasheet:
-
SM6S36AHM3/I.pdf
- Description:
- TVS DIODE 36VWM 58.1VC DO218AC
- Quantity:
- Payment:

- Shipping:

Inventory:7,588
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM6S36AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection, with 40.0 V minimum breakdown voltage (VBR), 36.0 V stand-off voltage (VWM), 58.1 V maximum clamping voltage (VC) at 79 A peak pulse current, and 4600 W peak pulse power (10/1000 μs). It operates up to 175 °C junction temperature and meets AEC-Q101 qualification.
For engineers reviewing the SM6S36AHM3/I datasheet, SM6S36AHM3/I pinout, SM6S36AHM3/I application, or SM6S36AHM3/I equivalent, this page delivers verified electrical parameters, DO-218AB package details, thermal resistance (RθJA = 55 °C/W), unidirectional polarity configuration, and automotive-grade reliability data per ISO7637-2 and J-STD-020 MSL Level 1.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and low leakage (<10 μA at VWM). Its DO-218AB case features a metal heatsink acting as the anode terminal, enabling efficient thermal dissipation with RθJM = 0.45 °C/W.
The device delivers 4600 W surge capability under 10/1000 μs waveform and maintains clamping performance across -55 °C to +175 °C operating range. Its 0.091 %/°C VBR temperature coefficient ensures predictable breakdown shift over temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 36.0 V - Maximum continuous reverse working voltage before clamping begins; defines safe operating margin in 24 V automotive systems. |
| VBR (min) | 40.0 V - Minimum breakdown voltage at 5 mA test current; guarantees turn-on threshold under worst-case tolerance and temperature drift. |
| VC @ IPPM | 58.1 V - Clamping voltage at 79 A peak pulse current; limits downstream IC stress during ISO7637-2 load dump transients. |
| PPPM (10/1000 μs) | 4600 W - Peak pulse power handling; supports high-energy surges without failure in engine control units and body electronics. |
| TJ max | +175 °C - Maximum junction temperature; enables placement near hot components (e.g., power modules) in under-hood applications. |
| RθJA | 55 °C/W - Junction-to-ambient thermal resistance on FR4 PCB; informs heatsinking requirements for sustained power dissipation. |
| AEC-Q101 | Qualified - Validated for automotive reliability including HTOL, TC, HAST, and ESD; required for safety-critical vehicle subsystems. |
Pinout & Package
Package: DO-218AB - Surface-mount, anode-heatsink configuration with matte tin-plated terminals, UL 94 V-0 molding compound, and JESD201 Class 2 whisker resistance. Mounting pad layout follows IPC-7351 standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Metal Heatsink) | Current entry point during clamping | Serves as primary thermal path and electrical connection; must be soldered to large copper area for RθJM optimization. |
| Cathode (Lead 1) | Current exit point during clamping | Standard signal-side connection; routed to protected line (e.g., battery rail input to MCU power supply). |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional polarity | Enables precise clamping only on negative transients relative to anode; avoids interference with DC bias in 24 V supply rails. |
| 175 °C junction rating | Supports operation in high-temperature zones (e.g., near engines or power converters) without derating or thermal shutdown. |
| Low leakage at VWM | <10 μA at 36 V and 25 °C - Minimizes standby power loss in always-on vehicle modules like telematics and gateway ECUs. |
| ISO7637-2 compliance | Validated against automotive load dump waveforms (e.g., Pulse 5a); ensures robustness in 12 V/24 V battery systems. |
| MSL Level 1 | Reflow-compatible up to 245 °C peak without moisture-induced damage; eliminates pre-bake requirement in SMT lines. |
Applications
| Engine Control Unit (ECU) Power Protection | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: Protects 5 V/3.3 V LDO regulators and microcontrollers from battery line transients during alternator load dump events. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and input of primary DC/DC converter. Use Value: Clamps 58.1 V at 79 A to prevent overvoltage damage to downstream silicon while maintaining <10 μA leakage at nominal 24 V system voltage. |
Use Scenario: Shields LIN bus transceivers and window motor drivers from switching noise and relay-induced spikes in door modules. IC Role / Device Role / Timing Role: Standoff-rated TVS on 12 V supply input to BCM main PCB, upstream of local regulators. Use Value: Withstands 4600 W surges per ISO7637-2 Pulse 5a and operates reliably at 175 °C ambient near HVAC actuators. |
| Advanced Driver Assistance Systems (ADAS) Camera Power | Electric Power Steering (EPS) Control Board |
Use Scenario: Safeguards image sensor power supplies in front-facing cameras exposed to under-hood thermal and electrical stress. IC Role / Device Role / Timing Role: Primary transient clamp on 12 V camera module input, mounted directly to heatsink plane. Use Value: Leverages DO-218AB's 0.45 °C/W junction-to-mount thermal resistance to sustain repeated 10/1000 μs surges without thermal runaway. |
Use Scenario: Protects gate drivers and current-sense amplifiers in EPS motor control circuits from inductive kickback during torque assist transitions. IC Role / Device Role / Timing Role: Fast-response TVS on high-side MOSFET source rail, referenced to chassis ground via anode heatsink. Use Value: Achieves 1.9 V forward voltage at 100 A, minimizing conduction loss during bidirectional fault current flow in steering assist cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM6S43AHM3/I | Higher VWM = 43 V, VBR min = 47.8 V, VC = 67.8 V at 69 A; same DO-218AB package and AEC-Q101 qualification. | Better suited for 48 V mild-hybrid systems; less margin for clamping in conventional 24 V load dump where VC must stay below 60 V. | Select when protecting 42–48 V rails or when higher standoff is needed to avoid false triggering on ripple. |
| SMAJ36AHE3/A | Lower PPPM = 400 W (vs. 4600 W), SMA package (DO-214AC), VC = 58.1 V at 6.8 A; not AEC-Q101 qualified. | Limited to non-automotive or low-energy industrial applications; insufficient for ISO7637-2 Pulse 5a compliance. | Use only in cost-sensitive, non-automotive designs where surge energy is ≤400 W and AEC-Q101 is not required. |
Compared with SM6S43AHM3/I and SMAJ36AHE3/A, the SM6S36AHM3/I uniquely balances 36 V standoff, 4600 W surge capacity, AEC-Q101 qualification, and DO-218AB thermal performance-making it the optimal choice for 24 V automotive load dump protection where clamping voltage headroom and junction temperature margin are critical.
Availability
SM6S36AHM3/I is available at Aetrix Electronics and suitable for automotive electronic control units, body control modules, ADAS camera power supplies, and electric power steering systems requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SM6S36AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM6SxxA family was engineered specifically for automotive load dump and ISO7637-2 transient suppression, emphasizing high-temperature operation, low leakage, and robust surge immunity in harsh under-hood environments.
FAQ
What is the clamping voltage of SM6S36AHM3/I at its rated peak pulse current?
The SM6S36AHM3/I has a maximum clamping voltage (VC) of 58.1 V at 79 A peak pulse current (IPPM) under 10/1000 μs waveform conditions. This value is measured per the manufacturer's test methodology and ensures downstream circuitry remains within safe voltage limits during automotive load dump events. The SM6S36AHM3/I's clamping performance is validated across its full operating temperature range.
Is SM6S36AHM3/I qualified for automotive use?
Yes, the SM6S36AHM3/I is AEC-Q101 qualified and rated for operation from -55 °C to +175 °C. It meets ISO7637-2 surge requirements and J-STD-020 MSL Level 1, making it suitable for under-hood automotive applications including engine control units and body control modules. The SM6S36AHM3/I carries the "H" suffix denoting AEC-Q101 qualification in its ordering code.
What package does SM6S36AHM3/I use, and how is polarity configured?
The SM6S36AHM3/I uses the DO-218AB surface-mount package with unidirectional polarity. The metal heatsink serves as the anode terminal, and Lead 1 is the cathode. This configuration requires the anode to be connected to the protected line's positive side (e.g., battery rail), with the cathode tied to the protected IC's input. The SM6S36AHM3/I's polarity is fixed and cannot be used in bidirectional configurations.
How does SM6S36AHM3/I compare to older SM6S36A variants?
The SM6S36AHM3/I replaces legacy SM6S36A with enhanced reliability: it includes the "H" AEC-Q101 qualification, "M3" tape-and-reel packaging (750 pcs/reel), and "I" orientation marking (anode toward sprocket hole). Electrically identical, the SM6S36AHM3/I offers improved traceability, RoHS compliance, and JESD201 Class 2 whisker resistance-key for modern automotive production. The SM6S36AHM3/I is not a drop-in replacement for non-H variants in AEC-Q101–mandated designs.
What is the thermal resistance profile of SM6S36AHM3/I?
The SM6S36AHM3/I has RθJA = 55 °C/W (junction-to-ambient, FR4 PCB) and RθJM = 0.45 °C/W (junction-to-mount). These values reflect its DO-218AB package design, where the metal heatsink provides a low-resistance thermal path. Effective thermal management requires soldering the anode heatsink to ≥100 mm² of 2 oz. copper; the SM6S36AHM3/I's 175 °C TJ max enables operation even with limited board-level cooling.
SM6S36AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36V
- Voltage - Breakdown (Min):
- 40V
- Voltage - Clamping (Max) @ Ipp:
- 58.1V
- Current - Peak Pulse (10/1000µs):
- 79A
- Power - Peak Pulse:
- 4600W (4.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AC
SM6S36AHM3/I FAQ
1.How can I place an order for SM6S36AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM6S36AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM6S36AHM3/I reliable?
The price and inventory of SM6S36AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6S36AHM3/I is usually 5 days.
3.What payment methods are accepted for SM6S36AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6S36AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM6S36AHM3/I?
SM6S36AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM6S36AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM6S36AHM3/I?
For technical support, including SM6S36AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6S36AHM3/I requirements.
6.How does Aetrix verify that SM6S36AHM3/I is sourced from the original manufacturer or authorized distributors?
All SM6S36AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6S36AHM3/I meets industry standards.
7.What is the process for return or replacement of SM6S36AHM3/I?
All SM6S36AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM6S36AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM6S36AHM3/I part is unused and in its original packaging.
Return procedure for SM6S36AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM6S36AHM3/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

