Vishay General Semiconductor - Diodes Division SM6T18AHE3_A/I
- Part No.:
- SM6T18AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SM6T18AHE3_A/I.pdf
- Description:
- TVS DIODE 15.3VWM 25.2VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:8,798
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM6T18AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 15.3 V stand-off voltage (VWM), 17.1–18.9 V breakdown voltage (VBR) at 1 mA, 25.2 V maximum clamping voltage (VC) at 24 A peak pulse current, and 600 W peak pulse power capability with 10/1000 μs waveform - deployed in automotive sensor protection and industrial power supply input stages.
For engineers reviewing the SM6T18AHE3_A/I datasheet, SM6T18AHE3_A/I pinout, SM6T18AHE3_A/I application, or SM6T18AHE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low-inductance SMB package, and compliance with IEC 61000-4-2/4-4/4-5 surge immunity requirements.
Technical Context
The SM6T18AHE3_A/I operates as a unidirectional avalanche diode, leveraging glass-passivated junction technology to deliver fast response (<1 ns) to ESD and surge events. Its clamping behavior is defined by a 10/1000 μs waveform test condition, with thermal resistance RθJA = 100 °C/W and RθJL = 20 °C/W enabling reliable operation under transient overload without thermal runaway.
Designed for surface-mount automation, it meets J-STD-020 MSL Level 1 (260 °C peak reflow), uses matte tin-plated leads compliant with JESD 22-B102, and carries AEC-Q101 qualification - confirming suitability for automotive-grade electronics where reliability under temperature cycling and mechanical stress is mandatory.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 15.3 V - Maximum continuous reverse voltage before significant leakage; ensures stable operation across 12 V automotive rails. |
| VBR (Breakdown Voltage) | 17.1–18.9 V at 1 mA - Tight tolerance defines precise turn-on threshold for transient suppression. |
| VC (Clamping Voltage) | 25.2 V at 24 A (10/1000 μs) - Limits downstream voltage stress during surge, protecting 24 V-rated ICs and MOSFETs. |
| PPPM (Peak Pulse Power) | 600 W - Sustains high-energy transients per IEC 61000-4-5 Level 4 (4 kV line-to-line). |
| TJ max | 150 °C - Enables use in under-hood automotive environments and industrial enclosures without derating below 125 °C ambient. |
| Package | SMB (DO-214AA) - Low-profile, surface-mountable package with 0.220" x 0.130" footprint and J-STD-020 MSL Level 1 compatibility. |
| AEC-Q101 Qualified | Yes - Validated for automotive applications including engine control units, body electronics, and ADAS sensor interfaces. |
Pinout & Package
Package: SMB (DO-214AA), molded case with matte tin-plated leads; cathode indicated by band marking on one end; polarity-critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Anode of internal PN junction (reverse-biased during clamping) | Connected to protected line (e.g., 12 V rail); clamps to ground when overvoltage exceeds VBR. |
| Anode | Cathode of internal PN junction (connected to reference/ground) | Must be tied to system ground plane with low-inductance path to ensure effective transient shunting. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated chip junction | Ensures stable VBR over lifetime and improved humidity resistance vs. epoxy-passivated alternatives. |
| 600 W peak pulse power (10/1000 μs) | Supports IEC 61000-4-5 surge immunity up to 4 kV in 2 Ω source impedance configurations. |
| Low inductance layout | Minimizes voltage overshoot during fast transients (<1 ns response), critical for protecting high-speed sensor interfaces. |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive temperature cycling, mechanical shock, and board-level reliability per AEC standard. |
| MSL Level 1, 260 °C peak reflow | Enables single-pass lead-free reflow assembly without popcorn cracking or delamination risk. |
Applications
| Automotive Sensor Protection | Industrial Power Input Stage |
|---|---|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and chassis ground to clamp transients before they reach IC input pins. Use Value: Prevents latch-up or permanent damage to 5 V/3.3 V sensor interface ICs during 12 V system load dump events (up to 35 V, 400 ms). |
Use Scenario: Safeguarding DC-DC converter inputs in PLC modules exposed to 24 V industrial power surges and switching noise. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 24 V rail upstream of input filter capacitor and regulator IC. Use Value: Limits input voltage to ≤25.2 V during 600 W transients, preserving downstream regulator integrity and reducing need for oversized input capacitors. |
| Consumer Device USB Port | Telecom Line Interface |
Use Scenario: ESD protection on VBUS and D+/D− lines of USB 2.0 ports in smart home hubs and set-top boxes. IC Role / Device Role / Timing Role: Secondary clamping device after dedicated ESD array, handling higher-energy surges beyond IEC 61000-4-2 ±15 kV contact discharge. Use Value: Provides robust second-stage clamping with 25.2 V VC, preventing latch-up in USB controller ICs rated for 5.5 V absolute maximum. |
Use Scenario: Surge protection on Ethernet PHY power rails (e.g., 3.3 V bias for magnetics) in VoIP gateways and base stations. IC Role / Device Role / Timing Role: Localized clamping element on isolated DC bias lines susceptible to induced lightning surges. Use Value: Withstands 10/1000 μs surges up to 24 A while maintaining <1 μA leakage at 15.3 V, avoiding false resets in always-on telecom circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ18A | Same SMB package, 18 V nominal VBR, but only commercial-grade (no AEC-Q101); RθJA = 110 °C/W vs. 100 °C/W. | Lacks automotive qualification; suitable for consumer/industrial designs without AEC compliance requirements. | Select SMAJ18A only if AEC-Q101 is not mandated and thermal margin allows for higher RθJA. |
| 1.5SMC18A | Higher-power SMC package (1500 W PPPM), same VBR range, but larger footprint (0.305" x 0.230"); no AEC-Q101 variant available. | Used where higher surge energy handling is required, but PCB space and automotive qualification are secondary concerns. | Choose 1.5SMC18A only when 600 W is insufficient and board area permits SMC footprint. |
Compared with SMAJ18A and 1.5SMC18A, the SM6T18AHE3_A/I uniquely combines AEC-Q101 qualification, SMB footprint, and 600 W rating - making it the optimal choice for space-constrained automotive and industrial applications requiring certified reliability without sacrificing surge performance.
Availability
SM6T18AHE3_A/I is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial power supplies, consumer USB protection, and telecom line bias circuits requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for SM6T18AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SM6T Series is engineered for robust transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where ESD, load dump, and lightning-induced surges demand consistent, qualified clamping performance.
FAQ
What is the maximum clamping voltage of the SM6T18AHE3_A/I at its rated peak pulse current?
The SM6T18AHE3_A/I has a maximum clamping voltage (VC) of 25.2 V at 24 A peak pulse current with a 10/1000 μs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The SM6T18AHE3_A/I maintains this clamping performance across its full operating temperature range (–65 °C to +150 °C), ensuring predictable protection in automotive under-hood applications.
Is the SM6T18AHE3_A/I suitable for automotive applications?
Yes, the SM6T18AHE3_A/I is AEC-Q101 qualified, as confirmed by its HE3 suffix and Vishay's official documentation. It undergoes rigorous testing for temperature cycling, mechanical shock, and board-level reliability per AEC-Q101 standards. The SM6T18AHE3_A/I is explicitly recommended for automotive sensor units, body control modules, and infotainment power rails where transient immunity and long-term stability are critical.
What does the "HE3" suffix indicate in SM6T18AHE3_A/I?
The "HE3" suffix in SM6T18AHE3_A/I denotes RoHS-compliant construction and AEC-Q101 qualification. "H" identifies the AEC-Q101 grade, "E3" confirms lead-free, RoHS-compliant plating and packaging. The "_A/I" portion specifies tape-and-reel packaging: "A" is the revision code, and "I" indicates 13-inch diameter reels with 3200 units per reel - a standard configuration for automated SMT assembly.
How does the SM6T18AHE3_A/I differ from bidirectional TVS diodes like SM6T18CA?
The SM6T18AHE3_A/I is unidirectional, meaning it conducts only in reverse bias above VBR and blocks forward current - ideal for DC power line protection with defined polarity. In contrast, SM6T18CA is bidirectional and symmetrical, used for AC or data-line protection (e.g., RS-485). The SM6T18AHE3_A/I has a cathode band marking; SM6T18CA has no polarity marking. Their VBR and VC values are identical, but conduction behavior differs fundamentally.
What is the thermal resistance and power derating behavior of the SM6T18AHE3_A/I?
The SM6T18AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead (RθJL) of 20 °C/W. Its 5.0 W steady-state power dissipation is rated at TA = 50 °C and derates linearly above that temperature - dropping to zero at 150 °C junction temperature. Derating curves per Figure 2 in Vishay document 88385 confirm usable power down to ~2.5 W at 100 °C ambient, supporting operation in sealed industrial enclosures.
SM6T18AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- SM6T, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15.3V
- Voltage - Breakdown (Min):
- 17.1V
- Voltage - Clamping (Max) @ Ipp:
- 25.2V
- Current - Peak Pulse (10/1000µs):
- 24A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SM6T18AHE3_A/I FAQ
1.How can I place an order for SM6T18AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM6T18AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM6T18AHE3_A/I reliable?
The price and inventory of SM6T18AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6T18AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM6T18AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6T18AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM6T18AHE3_A/I?
SM6T18AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM6T18AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM6T18AHE3_A/I?
For technical support, including SM6T18AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6T18AHE3_A/I requirements.
6.How does Aetrix verify that SM6T18AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM6T18AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6T18AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM6T18AHE3_A/I?
All SM6T18AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM6T18AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM6T18AHE3_A/I part is unused and in its original packaging.
Return procedure for SM6T18AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM6T18AHE3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)