Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM6T200A-E3/5B

Part No.:
SM6T200A-E3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSM6T200A-E3/5B.pdf
Description:
TVS DIODE 171VWM 274VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,855

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM6T200A-E3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, rated for 200 V standoff voltage (VWM = 171 V), 210 V minimum breakdown (VBR), 274 V maximum clamping voltage at 2.2 A peak pulse current, and 600 W peak pulse power with 10/1000 μs waveform. It protects MOSFETs and sensor signal lines in automotive powertrain control units against inductive switching transients.

For engineers reviewing the SM6T200A-E3/5B datasheet, SM6T200A-E3/5B pinout, SM6T200A-E3/5B application, or SM6T200A-E3/5B equivalent, key selection criteria include clamping voltage margin vs. protected IC's absolute maximum rating, thermal resistance (RθJA = 100 °C/W), unidirectional polarity marking, AEC-Q101 qualification status, and SMB footprint compatibility with automated SMT placement.

Technical Context

This TVS operates as a shunt-clamping device triggered by reverse-biased avalanche breakdown above VBR. Its low-inductance SMB package and glass-passivated junction enable fast response (<1 ns) to ESD and surge events while sustaining 100 A non-repetitive forward surge current (IFSM).

Clamping performance is specified under standardized 10/1000 μs and 8/20 μs waveforms, with derating applied above TA = 25 °C per thermal curves. Junction temperature range spans −65 °C to +150 °C, supporting under-hood automotive environments.

Key Specifications

ParameterValue and Actual Design Meaning
VWM171 V - Maximum continuous reverse operating voltage before clamping begins
VBR (min)190 V - Minimum breakdown voltage at 1 mA test current; defines turn-on threshold
VC @ IPPM274 V at 2.2 A - Clamped voltage during 10/1000 μs surge; must stay below protected device's max rating
PPPM600 W - Peak pulse power handling with 10/1000 μs waveform; determines surge energy absorption
RθJA100 °C/W - Junction-to-ambient thermal resistance on standard 5.0 mm × 5.0 mm copper pads
TJ max+150 °C - Maximum allowable junction temperature; sets upper limit for thermal design margin

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band at one end; anode at opposite end.

Pin/TerminalCircuit RoleDesign Meaning
Cathode (banded end)Transient current sinkConnected to protected line; conducts surge current to ground when V > VBR
Anode (unmarked end)Reference nodeTypically tied to system ground or low-impedance return path for clamping loop

Key Features

FeatureDesign Value
600 W peak pulse powerEnables robust protection against ISO 7637-2 Pulse 1/2a/5a surges in 12 V automotive systems
Glass-passivated junctionEnsures stable VBR over lifetime and improved reliability vs. epoxy-passivated alternatives
MSL Level 1 (260 °C peak)Supports lead-free reflow without moisture-induced popcorning or delamination
Low inductance SMB packageMinimizes voltage overshoot during fast-rising transients (e.g., ESD, load dump edge)
AEC-Q101 qualified option availableHE3/HM3 variants meet stress test requirements for automotive electronic modules

Applications

Automotive Powertrain ControlIndustrial Motor Drive Protection

Use Scenario: Suppressing load dump transients on 12 V supply rails feeding engine control unit (ECU) microcontrollers and CAN transceivers.

IC Role / Device Role / Timing Role: Shunt-clamping TVS placed between battery rail and ground, activated within nanoseconds of overvoltage event.

Use Value: Limits rail voltage to ≤274 V during 100 ms, 35 V load dump, preventing latch-up or gate oxide damage in downstream ICs.

Use Scenario: Protecting gate drivers and current-sense amplifiers from flyback spikes generated by IGBTs in variable-frequency drives.

IC Role / Device Role / Timing Role: Unidirectional clamp across DC bus or gate drive supply, absorbing inductive kick energy.

Use Value: Clamps 600 V spikes to <274 V within <1 ns, preserving gate oxide integrity and avoiding false triggering of protection circuits.

Telecom Line InterfaceConsumer Sensor Signal Conditioning

Use Scenario: Guarding RS-485 transceivers and PHY ICs against lightning-induced surges on outdoor data lines.

IC Role / Device Role / Timing Role: Primary-level TVS on differential pair inputs, coordinated with secondary GDT or polymer PTC.

Use Value: Absorbs up to 600 W (10/1000 μs) without degradation, maintaining signal integrity and meeting ITU-T K.21 basic protection level.

Use Scenario: Shielding analog outputs of MEMS pressure sensors in HVAC controllers from ESD events during handling or field operation.

IC Role / Device Role / Timing Role: Low-capacitance (≈100 pF) unidirectional clamp on 3.3 V output line referenced to local ground.

Use Value: Prevents sensor output saturation or internal latch-up during ±8 kV contact discharge, with no signal distortion due to low leakage (<1 μA at 171 V).

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ200A-E3/57TSame VWM/VBR/VC ratings; SMA package (DO-214AC), RθJA = 110 °C/W, lower PPPM = 400 WLower surge capability limits use in high-energy automotive load dump; better suited for consumer-grade I/O protectionSelect when board space allows larger SMA footprint and surge energy demand is ≤400 W
1.5SMC200ASame electrical specs; SMC package (DO-214AB), RθJA = 85 °C/W, PPPM = 1500 W, higher IFSM = 200 AHigher power handling supports industrial 24/48 V systems with longer-duration surges; requires larger PCB pad areaChoose for 24 V rail protection where thermal margin and energy absorption exceed SMB limits

Compared with SMAJ200A-E3/57T and 1.5SMC200A, SM6T200A-E3/5B delivers optimal balance of 600 W surge capacity, SMB footprint compatibility with high-density automotive PCBs, and AEC-Q101-ready variants-making it preferred for space-constrained 12 V ECU designs requiring validated automotive reliability.

Availability

SM6T200A-E3/5B is available at Aetrix Electronics and suitable for automotive powertrain control, industrial motor drive protection, telecom line interface, and consumer sensor signal conditioning requiring stable component supply and RoHS-compliant commercial-grade TVS diodes.

Supply support for SM6T200A-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, precision, and automotive-grade qualification.

The SM6T Series is designed specifically for surface-mount transient suppression in harsh environments, targeting automotive, industrial, and telecom applications where compact size, high surge robustness, and consistent clamping performance are critical.

FAQ

What is the clamping voltage of SM6T200A-E3/5B under a 10/1000 μs surge?

The SM6T200A-E3/5B has a maximum clamping voltage (VC) of 274 V at 2.2 A peak pulse current with a 10/1000 μs waveform. This value is measured per Figure 1 in the Vishay datasheet 88385 and defines the upper voltage limit imposed on the protected circuit during standardized surge testing. The SM6T200A-E3/5B maintains this clamping performance across its full operating temperature range.

Is SM6T200A-E3/5B AEC-Q101 qualified?

No, SM6T200A-E3/5B is the commercial-grade RoHS-compliant variant. AEC-Q101 qualification is available only in the HE3 or HM3 suffix versions (e.g., SM6T200AHE3_B/I). The SM6T200A-E3/5B meets JESD201 Class 2 whisker resistance and MSL Level 1 reflow requirements but does not undergo the full AEC-Q101 stress test sequence.

What is the thermal resistance of SM6T200A-E3/5B, and how does it affect layout?

The SM6T200A-E3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain safe junction temperatures under repeated surges, PCB layout must replicate this minimum pad area and avoid thermal isolation. Reducing pad size increases RθJA and risks exceeding the +150 °C TJ max during high-duty-cycle transients.

How does SM6T200A-E3/5B differ from bidirectional variants like SM6T200CA?

The SM6T200A-E3/5B is unidirectional and features a cathode band for polarity identification; it conducts only in reverse bias above VBR. In contrast, SM6T200CA is bidirectional, lacks polarity marking, and clamps symmetrically in both directions. Use SM6T200A-E3/5B for DC rail protection where polarity is fixed; choose SM6T200CA for AC-coupled or floating signal lines such as RS-485 differential pairs.

What is the maximum reverse leakage current of SM6T200A-E3/5B at its standoff voltage?

At its maximum standoff voltage (VWM = 171 V), the SM6T200A-E3/5B exhibits a maximum reverse leakage current (ID) of 1.0 μA at TA = 25 °C. This low leakage ensures minimal power loss and avoids interference with high-impedance sensing circuits. Leakage increases with temperature but remains below 10 μA up to +85 °C per datasheet characterization.

SM6T200A-E3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
SM6T, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
171V
Voltage - Breakdown (Min):
190V
Voltage - Clamping (Max) @ Ipp:
274V
Current - Peak Pulse (10/1000µs):
2.2A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SM6T200A-E3/5B FAQ

1.How can I place an order for SM6T200A-E3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SM6T200A-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM6T200A-E3/5B reliable?

The price and inventory of SM6T200A-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6T200A-E3/5B is usually 5 days.

3.What payment methods are accepted for SM6T200A-E3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6T200A-E3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM6T200A-E3/5B?

SM6T200A-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM6T200A-E3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM6T200A-E3/5B?

For technical support, including SM6T200A-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6T200A-E3/5B requirements.

6.How does Aetrix verify that SM6T200A-E3/5B is sourced from the original manufacturer or authorized distributors?

All SM6T200A-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6T200A-E3/5B meets industry standards.

7.What is the process for return or replacement of SM6T200A-E3/5B?

All SM6T200A-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SM6T200A-E3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM6T200A-E3/5B part is unused and in its original packaging.

Return procedure for SM6T200A-E3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM6T200A-E3/5B Tags

  • SM6T200A-E3/5B
  • SM6T200A-E3/5B PDF
  • SM6T200A-E3/5B Datasheet
  • SM6T200A-E3/5B Specifications
  • SM6T200A-E3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM6T200A-E3/5B
  • Buy SM6T200A-E3/5B
  • SM6T200A-E3/5B Price
  • SM6T200A-E3/5B Distributor
  • SM6T200A-E3/5B Supplier
  • SM6T200A-E3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER