Vishay General Semiconductor - Diodes Division SM6T200AHE3_A/H

Overview

SM6T200AHE3_A/H from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, rated for 200 V standoff voltage (VWM = 171 V), 210 V minimum breakdown (VBR), 274 V maximum clamping voltage at 2.2 A peak pulse current, and 600 W peak pulse power with 10/1000 μs waveform. It protects automotive sensor signal lines and MOSFET gate drivers against inductive switching transients.

For engineers reviewing the SM6T200AHE3_A/H datasheet, SM6T200AHE3_A/H pinout, SM6T200AHE3_A/H application, or SM6T200AHE3_A/H equivalent, key selection criteria include clamping voltage margin relative to protected IC's absolute maximum rating, junction temperature derating above 25 °C, AEC-Q101 qualification status, and thermal resistance (RθJA = 100 °C/W) under defined PCB pad layout.

Technical Context

This TVS operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its 200 V standoff threshold. Its glass-passivated junction ensures stable breakdown behavior and low leakage (<1 μA at VWM), while low-inductance SMB packaging enables fast response to sub-microsecond transients.

The device complies with AEC-Q101 stress testing for automotive use and is rated for TJ = –65 °C to +150 °C operation. Clamping performance is specified under standardized 10/1000 μs and 8/20 μs waveforms, with thermal derating applied per Fig. 2 for ambient temperatures above 25 °C.

Key Specifications

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band on one end.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMAJ200A-E3/52 and 1.5SMC200A, SM6T200AHE3_A/H delivers superior surge margin (600 W vs. 400 W/-), tighter clamping (274 V vs. 324 V/287 V), and automotive qualification - critical for safety-critical sensor interfaces where failure modes must be rigorously controlled.

Availability

SM6T200AHE3_A/H is available at Aetrix Electronics and suitable for automotive sensor modules, industrial motor drives, telecom line interfaces, and consumer power supply designs requiring stable component supply with AEC-Q101 assurance and consistent surge performance.

Supply support for SM6T200AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, precision, and application-specific optimization.

The SM6T Series is engineered for high-reliability transient suppression in harsh environments, targeting automotive, industrial, and telecom applications where consistent clamping behavior and long-term stability under thermal cycling are essential.

FAQ

What is the clamping voltage of SM6T200AHE3_A/H under a 10/1000 μs transient?

The SM6T200AHE3_A/H has a maximum clamping voltage (VC) of 274 V when subjected to a 10/1000 μs waveform at 2.2 A peak pulse current. This value is measured per Figure 1 in the official Vishay datasheet (Doc. #88385, Rev. 09-Jan-2024) and defines the upper voltage limit imposed on protected circuitry during surge events. Designers must ensure this clamped voltage remains below the absolute maximum rating of downstream components.

Is SM6T200AHE3_A/H qualified for automotive applications?

Yes, SM6T200AHE3_A/H is AEC-Q101 qualified, as confirmed by the "HE3" suffix in its ordering code and explicitly stated in the Vishay SM6T datasheet (Section "MECHANICAL DATA"). This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and unbiased highly accelerated stress testing - making SM6T200AHE3_A/H suitable for under-hood and cabin electronics in passenger vehicles and commercial vehicles.

What is the thermal resistance of SM6T200AHE3_A/H, and how does it affect layout?

The SM6T200AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimal PCB copper; increasing pad area or adding thermal vias lowers RθJA. For reliable operation at elevated ambient temperatures, designers must apply derating per Figure 2 in the SM6T datasheet to avoid exceeding the +150 °C maximum junction temperature.

How does SM6T200AHE3_A/H differ from bidirectional variants like SM6T200CA?

SM6T200AHE3_A/H is unidirectional, with polarity marked by a cathode band and intended for DC-biased lines where reverse conduction is blocked. In contrast, SM6T200CA is bidirectional, symmetrical in both directions, and used for AC-coupled or floating signal lines. The two are not interchangeable without circuit redesign - using SM6T200AHE3_A/H in place of SM6T200CA would leave one polarity unprotected, and vice versa may cause unintended forward conduction.

What is the maximum reverse leakage current of SM6T200AHE3_A/H at its standoff voltage?

The maximum reverse leakage current (ID) of SM6T200AHE3_A/H is 1.0 μA at its rated standoff voltage (VWM = 171 V), measured at TA = 25 °C. This low leakage ensures minimal power loss and signal interference in high-impedance sensing circuits. Leakage increases with temperature and voltage stress, so system-level validation at worst-case operating conditions is recommended for precision analog applications.