My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SM6T200AHE3_A/I
;;2.jpg)
- Part No.:
- SM6T200AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SM6T200AHE3_A/I.pdf
- Description:
- TVS DIODE 171VWM 274VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,262
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM6T200AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 171 V stand-off voltage (VWM), 190–210 V breakdown voltage (VBR) at 1 mA, 274 V maximum clamping voltage (VC) at 2.2 A (10/1000 μs), 600 W peak pulse power rating, and AEC-Q101 qualification for automotive use.
For engineers reviewing the SM6T200AHE3_A/I datasheet, SM6T200AHE3_A/I pinout, SM6T200AHE3_A/I application, or SM6T200AHE3_A/I equivalent, key selection criteria include clamping performance under 10/1000 μs surge, unidirectional polarity with cathode band marking, thermal resistance (RθJA = 100 °C/W), and RoHS-compliant, halogen-free AEC-Q101 qualified construction.
Technical Context
This TVS diode operates as a fast-acting overvoltage protection device using an avalanche junction to clamp transient energy before downstream components are damaged. Its glass-passivated chip junction ensures stable breakdown behavior and low leakage (<1 μA at VWM), while low inductance supports effective suppression of high-speed transients induced by inductive load switching or ESD events.
The device is rated for operation from –65 °C to +150 °C junction temperature, with derated peak pulse power above 25 °C ambient. Mounting on 5.0 mm × 5.0 mm copper pads per terminal is required to sustain its 600 W (10/1000 μs) rating, and it meets J-STD-020 MSL Level 1 with 260 °C reflow peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 171 V - Maximum continuous reverse operating voltage before clamping begins |
| VBR (min/max) | 190 V / 210 V at 1 mA - Ensures predictable, tight-breakdown threshold for reliable triggering |
| VC @ IPPM | 274 V at 2.2 A (10/1000 μs) - Clamping voltage defines worst-case stress on protected circuitry |
| PPPM | 600 W - Peak surge energy absorption capability under standardized lightning/surge waveform |
| RθJA | 100 °C/W - Thermal resistance determines safe power dissipation limits without heatsinking |
| TJ max. | +150 °C - Enables use in under-hood automotive environments and industrial enclosures |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry (reverse-biased during clamping) | Connected to lower-potential side of protected line; forms avalanche path with cathode |
| Cathode | Reverse-biased terminal during normal operation | Marked with band; connected to higher-potential rail (e.g., VBUS or signal high); conducts during overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Supports IEC 61000-4-5 Level 4 surge immunity (4 kV line-to-earth) in properly laid-out PCBs |
| Glass passivated junction | Ensures long-term stability of VBR and low parameter drift across temperature and lifetime |
| Low inductance construction | Minimizes voltage overshoot during fast transients (e.g., ESD >1 ns rise time) |
| MSL Level 1, 260 °C peak reflow | Enables compatibility with standard lead-free SMT assembly without moisture sensitivity concerns |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive powertrain, body control, and ADAS modules requiring zero-failure field reliability |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 24 V supply rails in engine control units (ECUs) against load dump and alternator transients. IC Role / Device Role: Unidirectional TVS placed between battery rail and input filter capacitor. Use Value: Clamps transients up to 274 V at 2.2 A, limiting stress on upstream DC/DC converters and microcontrollers. | Use Scenario: Safeguarding analog sensor inputs (e.g., pressure, temperature) in PLC I/O modules exposed to field wiring surges. IC Role / Device Role: Low-leakage (≤1 μA) clamping element on signal lines referenced to system ground. Use Value: Maintains signal integrity below 171 V stand-off while suppressing 600 W surges without loading the sensor output. |
| Telecom DC Power Feeding Protection | Consumer Appliance Motor Drive Protection |
Use Scenario: Guarding PoE-powered equipment (e.g., IP cameras) against induced surges on 48 V DC feed lines. IC Role / Device Role: Primary overvoltage clamp on midspan injector output, paired with series impedance. Use Value: Withstands repeated 10/1000 μs surges up to 600 W while maintaining <1 μA leakage at 48 V nominal. | Use Scenario: Suppressing commutation spikes from brushed DC motors in smart home appliances (e.g., vacuum cleaners). IC Role / Device Role: Flyback energy clamp across motor terminals, mounted directly at motor connector. Use Value: Fast response (<1 ns) and 274 V clamping limit MOSFET drain-source voltage stress during turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ200A-E3/5B | Same VWM (171 V), identical SMB package, but lower PPPM (400 W) and higher VC (291 V at 2.0 A) | Limited to lower-energy surge environments (e.g., IEC 61000-4-5 Level 2); not AEC-Q101 qualified | Select when cost sensitivity outweighs automotive qualification or 600 W surge margin |
| 1.5SMC200A | Higher package thermal mass (SMC/DO-214AB), same VBR range, but RθJA = 15 °C/W and VC = 274 V at 2.2 A | Better thermal handling for repetitive surges; requires larger PCB footprint (7.11 mm × 6.22 mm vs. SMB's 4.57 mm × 3.94 mm) | Choose when board space allows and sustained power dissipation >5 W is expected |
Compared with SMAJ200A-E3/5B and 1.5SMC200A, the SM6T200AHE3_A/I delivers AEC-Q101 assurance in the smallest footprint while maintaining identical clamping voltage and superior 600 W surge capacity-making it optimal for space-constrained, high-reliability automotive and industrial designs.
Availability
SM6T200AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, telecom DC feeding systems, and consumer appliance motor drives requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SM6T200AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SM6T Series is engineered for robust transient suppression in harsh environments-designed specifically for automotive, industrial, and telecom applications where AEC-Q101 compliance, low clamping voltage, and repeatable surge endurance are mandatory.
FAQ
What is the clamping voltage of the SM6T200AHE3_A/I under a 10/1000 μs surge?
The SM6T200AHE3_A/I has a maximum clamping voltage (VC) of 274 V when subjected to a 10/1000 μs waveform at 2.2 A peak pulse current. This value is measured per Figure 1 in the official Vishay datasheet (Document Number: 88385, Rev. 09-Jan-2024) and defines the upper voltage limit imposed on protected circuitry during standardized surge events. The SM6T200AHE3_A/I maintains this clamping performance across its qualified operating temperature range.
Is the SM6T200AHE3_A/I suitable for automotive applications?
Yes, the SM6T200AHE3_A/I is AEC-Q101 qualified, as confirmed by its HE3 suffix and explicit listing in Vishay's automotive-grade ordering codes. It undergoes stress testing for temperature cycling, high-temperature reverse bias (HTRB), and ESD per AEC-Q101 requirements. The SM6T200AHE3_A/I is approved for use in engine control units, body electronics, and ADAS modules where transient immunity and long-term reliability are critical.
What does the "HE3" and "A/I" suffix mean in SM6T200AHE3_A/I?
The "HE3" suffix indicates RoHS-compliant construction with AEC-Q101 qualification; "A/I" denotes packaging in 13-inch diameter plastic tape and reel with a base quantity of 3200 units. This matches Vishay's documented ordering convention where "I" corresponds to 13″ reels (see Ordering Information table, page 2 of Document 88385). The SM6T200AHE3_A/I is fully traceable and intended for automated SMT placement.
How does the SM6T200AHE3_A/I compare to bidirectional TVS diodes?
The SM6T200AHE3_A/I is unidirectional and features a cathode band marking; it conducts only during reverse overvoltage, making it ideal for DC power line protection. Bidirectional variants (e.g., SM6T200CA) lack polarity marking and protect both polarities-used in AC or data-line applications. The SM6T200AHE3_A/I offers tighter leakage (<1 μA at VWM) and avoids forward conduction issues present in bidirectional types on DC rails.
What is the thermal resistance and maximum junction temperature of the SM6T200AHE3_A/I?
The SM6T200AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 5.0 mm × 5.0 mm copper pads per terminal, and a maximum junction temperature (TJ max.) of +150 °C. These values are specified in the Thermal Characteristics table (page 2) and Maximum Ratings table (page 1) of the Vishay SM6T datasheet. Derating applies above 25 °C ambient, per Figure 2.
SM6T200AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- SM6T, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 171V
- Voltage - Breakdown (Min):
- 190V
- Voltage - Clamping (Max) @ Ipp:
- 274V
- Current - Peak Pulse (10/1000µs):
- 2.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SM6T200AHE3_A/I FAQ
1.How can I place an order for SM6T200AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM6T200AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM6T200AHE3_A/I reliable?
The price and inventory of SM6T200AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6T200AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM6T200AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6T200AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM6T200AHE3_A/I?
SM6T200AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM6T200AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM6T200AHE3_A/I?
For technical support, including SM6T200AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6T200AHE3_A/I requirements.
6.How does Aetrix verify that SM6T200AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM6T200AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6T200AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM6T200AHE3_A/I?
All SM6T200AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM6T200AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM6T200AHE3_A/I part is unused and in its original packaging.
Return procedure for SM6T200AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM6T200AHE3_A/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
