Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM6T220AHE3/5B

Part No.:
SM6T220AHE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSM6T220AHE3/5B.pdf
Description:
TVS DIODE 188VWM 328VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,250

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM6T220AHE3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, rated for 220 V breakdown voltage (VBR = 209–231 V at 1.0 mA), 328 V maximum clamping voltage (VC) at 2.0 A peak pulse current, and 600 W peak pulse power with 10/1000 μs waveform. It provides robust overvoltage protection for automotive sensor signal lines and industrial MOSFET gate drivers.

For engineers reviewing the SM6T220AHE3/5B datasheet, SM6T220AHE3/5B pinout, SM6T220AHE3/5B application, or SM6T220AHE3/5B equivalent, key selection criteria include clamping performance under 2.0 A surge, AEC-Q101 qualification status, unidirectional polarity with cathode band marking, and thermal resistance (RθJA = 100 °C/W) on standard 5.0 mm × 5.0 mm copper pads.

Technical Context

The SM6T220AHE3/5B uses a glass-passivated silicon junction to achieve low inductance and fast response to transients. Its unidirectional configuration enables precise reverse-biased clamping while blocking forward conduction until VF exceeds ~1.2 V.

Designed for 10/1000 μs surge waveforms, it delivers 328 V clamping at 2.0 A IPPM and maintains ≤1.0 μA reverse leakage at 188 V stand-off voltage (VWM). Thermal derating begins above 25 °C ambient, with RθJL = 20 °C/W enabling effective lead-to-board heat transfer.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 209 V / 231 V at 1.0 mA - defines reliable turn-on threshold for overvoltage clamping
VWM 188 V - maximum continuous reverse operating voltage before significant leakage
VC @ IPPM 328 V at 2.0 A (10/1000 μs) - peak clamped voltage protecting downstream ICs
PPPM 600 W - surge energy handling capability per single transient event
TJ max. +150 °C - maximum junction temperature supporting automotive under-hood use
RθJA 100 °C/W - thermal resistance limiting self-heating during repeated surges on standard PCB pads

Pinout & Package

Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and AEC-Q101 qualified. Cathode identified by black band.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction path Connects to lower-potential side of protected circuit; conducts only during forward surge or bias
Cathode (banded end) Clamping reference node Connected to protected line; sinks transient current to ground when reverse voltage exceeds VBR

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive applications including engine control units and ADAS sensor interfaces
600 W peak pulse power (10/1000 μs) Withstands ISO 7637-2 Pulse 1/2a/3a transients without degradation
Low inductance construction Minimizes voltage overshoot during fast-rising ESD or switching transients (e.g., <10 ns rise time)
MSL Level 1 (260 °C peak reflow) Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns
Glass passivated junction Ensures stable VBR and low leakage over 15-year automotive service life

Applications

Automotive Sensor Protection Industrial Motor Drive Gate Protection

Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from load dump and inductive kickback in 12 V/24 V vehicle systems.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and chassis ground to clamp transients before they reach IC input pins.

Use Value: Limits clamped voltage to 328 V at 2.0 A, ensuring compliance with ISO 16750-2 load dump test requirements for Class III/IV systems.

Use Scenario: Safeguarding IGBT/MOSFET gate drivers in variable-frequency drives against Miller-induced voltage spikes and cross-conduction transients.

IC Role / Device Role / Timing Role: Mounted directly across gate-source terminals to suppress dv/dt-induced false triggering during high-speed switching.

Use Value: Clamps gate-source voltage within safe SOA limits (<20 V typical) while surviving repetitive 600 W surges per IEC 61800-3.

Telecom Line Interface Protection Power Supply Input Surge Suppression

Use Scenario: Shielding Ethernet PHYs and PoE controllers from lightning-induced surges on RJ45 ports in outdoor base stations and network switches.

IC Role / Device Role / Timing Role: Paired with common-mode chokes as part of a multi-stage protection scheme on differential pairs.

Use Value: Provides primary clamping with 328 V VC, enabling secondary suppression stages to handle residual energy without saturation.

Use Scenario: Front-end protection of 24 V DC industrial power supplies against AC line transients and capacitor discharge events.

IC Role / Device Role / Timing Role: Placed between input rail and ground to absorb 10/1000 μs surges up to 600 W before reaching bulk capacitors and regulators.

Use Value: Maintains 188 V VWM margin above nominal 24 V supply, preventing leakage-related power loss while delivering robust 328 V clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ220A-E3/5B Same VBR range (209–231 V), but 400 W PPPM and SMA package (higher RθJA = 150 °C/W) Limited to lower-energy transients; unsuitable for ISO 7637-2 Pulse 5a load dump simulation Select when cost sensitivity outweighs automotive-grade surge margin and thermal performance
1.5SMC220AHE3/A Same VBR/VC, but 1500 W PPPM and larger SMC (DO-214AB) package (RθJA = 70 °C/W) Overqualified for most 24 V systems; requires larger PCB area and higher assembly cost Choose when system-level testing demands >1000 W surge headroom or extended thermal cycling endurance

Compared with SMAJ220A-E3/5B, SM6T220AHE3/5B delivers 50 % higher surge power rating and superior thermal dissipation in the same footprint; versus 1.5SMC220AHE3/A, it offers identical clamping performance with 30 % smaller board area and lower profile-critical for space-constrained automotive modules.

Availability

SM6T220AHE3/5B is available at Aetrix Electronics and suitable for automotive sensor protection, industrial motor drive gate circuits, and telecom line interface designs requiring stable component supply, AEC-Q101 compliance, and consistent 600 W transient immunity.

Supply support for SM6T220AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, rectifiers, and protection devices for automotive, industrial, and computing markets.

The SM6T Series was developed specifically for AEC-Q101-compliant transient suppression in harsh-environment electronics, emphasizing low-inductance packaging, stable clamping, and compatibility with automated SMT assembly.

FAQ

What is the clamping voltage of SM6T220AHE3/5B at its rated peak pulse current?

The SM6T220AHE3/5B has a maximum clamping voltage (VC) of 328 V at 2.0 A peak pulse current with a 10/1000 μs waveform. This value is measured under standardized test conditions per JEDEC standards and ensures predictable voltage limiting during transient events. The SM6T220AHE3/5B maintains this clamping performance across its full operating temperature range of -65 °C to +150 °C.

Is SM6T220AHE3/5B qualified for automotive applications?

Yes, SM6T220AHE3/5B is AEC-Q101 qualified, as indicated by the "HE3" suffix in its ordering code. It meets stress test requirements for temperature cycling, humidity, mechanical shock, and surge immunity required for automotive electronics. The SM6T220AHE3/5B is commonly used in engine control modules, body electronics, and ADAS sensor interfaces where reliability under vibration and thermal cycling is critical.

What does the "5B" in SM6T220AHE3/5B signify?

The "5B" suffix denotes the packaging configuration: 13-inch diameter plastic tape and reel, with a base quantity of 3200 units per reel. This format supports high-volume automated pick-and-place assembly. The SM6T220AHE3/5B uses the same SMB (DO-214AA) package and electrical specifications as other variants in the SM6T220A family, differing only in packaging and qualification level.

How does SM6T220AHE3/5B differ from bidirectional TVS diodes like SM6T220CAHE3/5B?

The SM6T220AHE3/5B is unidirectional and features a cathode band for polarity identification, allowing it to block forward current until ~1.2 V while clamping reverse transients above VBR. In contrast, SM6T220CAHE3/5B is bidirectional with symmetrical clamping in both directions and no polarity marking. The SM6T220AHE3/5B is preferred for DC-coupled signal lines where forward conduction must be avoided.

What is the maximum reverse leakage current for SM6T220AHE3/5B at its stand-off voltage?

At its maximum stand-off voltage (VWM) of 188 V and ambient temperature of 25 °C, the SM6T220AHE3/5B exhibits a maximum reverse leakage current (ID) of 1.0 μA. This low leakage ensures minimal power loss in always-on automotive circuits and preserves signal integrity in high-impedance sensor interfaces. The SM6T220AHE3/5B maintains leakage below 10 μA even at elevated temperatures up to 125 °C.

SM6T220AHE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
SM6T, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
188V
Voltage - Breakdown (Min):
209V
Voltage - Clamping (Max) @ Ipp:
328V
Current - Peak Pulse (10/1000µs):
2A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SM6T220AHE3/5B FAQ

1.How can I place an order for SM6T220AHE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SM6T220AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM6T220AHE3/5B reliable?

The price and inventory of SM6T220AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6T220AHE3/5B is usually 5 days.

3.What payment methods are accepted for SM6T220AHE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6T220AHE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM6T220AHE3/5B?

SM6T220AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM6T220AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM6T220AHE3/5B?

For technical support, including SM6T220AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6T220AHE3/5B requirements.

6.How does Aetrix verify that SM6T220AHE3/5B is sourced from the original manufacturer or authorized distributors?

All SM6T220AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6T220AHE3/5B meets industry standards.

7.What is the process for return or replacement of SM6T220AHE3/5B?

All SM6T220AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SM6T220AHE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM6T220AHE3/5B part is unused and in its original packaging.

Return procedure for SM6T220AHE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM6T220AHE3/5B Tags

  • SM6T220AHE3/5B
  • SM6T220AHE3/5B PDF
  • SM6T220AHE3/5B Datasheet
  • SM6T220AHE3/5B Specifications
  • SM6T220AHE3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM6T220AHE3/5B
  • Buy SM6T220AHE3/5B
  • SM6T220AHE3/5B Price
  • SM6T220AHE3/5B Distributor
  • SM6T220AHE3/5B Supplier
  • SM6T220AHE3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER