Vishay General Semiconductor - Diodes Division SM6T30AHE3_B/I
- Part No.:
- SM6T30AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SM6T30AHE3_B/I.pdf
- Description:
- 600W,30V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:7,092
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM6T30AHE3_B/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 30 V breakdown voltage (VBR = 28.5–31.5 V at 1.0 mA), 41.5 V maximum clamping voltage (VC) at 14.5 A peak pulse current, 600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification for automotive use.
For engineers reviewing the SM6T30AHE3_B/I datasheet, SM6T30AHE3_B/I pinout, SM6T30AHE3_B/I application, or SM6T30AHE3_B/I equivalent, key selection criteria include unidirectional polarity, 25.6 V stand-off voltage, 1.0 μA max reverse leakage at VWM, 150 °C max junction temperature, and RoHS-compliant, halogen-free construction with matte tin-plated leads.
Technical Context
The SM6T30AHE3_B/I operates as a unidirectional clamping device with glass-passivated junction and low-inductance SMB package optimized for fast transient response. Its electrical behavior follows standard TVS diode characteristics: reverse-biased operation up to VWM = 25.6 V, sharp avalanche breakdown at VBR, and stable clamping at VC ≤ 41.5 V under 10/1000 μs surge.
It is rated for 100 A non-repetitive forward surge (IFSM), meets MSL Level 1 per J-STD-020, and supports automated SMT placement. Thermal resistance is RθJA = 100 °C/W (typical) and RθJL = 20 °C/W, enabling reliable operation in automotive engine control units and industrial sensor interfaces without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 28.5 V / 31.5 V at 1.0 mA - defines precise avalanche onset for repeatable clamping threshold |
| VWM | 25.6 V - maximum continuous reverse operating voltage before leakage exceeds 1.0 μA |
| VC @ IPPM | 41.5 V at 14.5 A (10/1000 μs) - limits protected circuit voltage during worst-case surge |
| PPPM | 600 W - peak transient energy absorption capability under standardized waveform |
| TJ max. | +150 °C - enables deployment in under-hood automotive environments and high-ambient industrial settings |
| Qualification | AEC-Q101 qualified - validated for automotive-grade reliability and lifetime stress testing |
| Package | SMB (DO-214AA) - industry-standard surface-mount outline with 5.0 mm × 5.0 mm copper pad thermal design |
Pinout & Package
SMB (DO-214AA) package: molded plastic case with matte tin-plated leads, cathode band marking, UL 94 V-0 flammability rating, and J-STD-002/JESD 22-B102 solderability compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse bias reference | Connected to lower-potential side of protected line; establishes unidirectional conduction path |
| Cathode | Avalanche clamping node / Surge return path | Marked with band; ties to higher-potential rail or ground to shunt transients away from IC inputs |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable breakdown voltage over time and temperature, minimizing parameter drift in long-life automotive modules |
| 600 W peak pulse power (10/1000 μs) | Handles ISO 7637-2 Pulse 1/2a/5a surges and IEC 61000-4-5 Line-to-Line surges without degradation |
| AEC-Q101 qualification | Validated for automotive applications including powertrain, body control, and ADAS sensor protection |
| Low inductance SMB package | Reduces voltage overshoot during fast-rising transients (< 1 ns rise time), critical for protecting high-speed CAN/LIN interfaces |
| MSL Level 1 (260 °C peak) | Enables single-reflow assembly without moisture sensitivity concerns or baking requirements |
Applications
| Automotive Power Supply Protection | Industrial Sensor Signal Line Clamping |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBAT and GND to clamp surges above 25.6 V while remaining inactive during normal operation. Use Value: Limits voltage to ≤41.5 V during 14.5 A transients, preventing damage to downstream LDOs and microcontrollers in engine control modules. | Use Scenario: Safeguarding analog outputs of pressure/temperature sensors in PLC I/O modules exposed to field wiring noise. IC Role / Device Role / Timing Role: Placed across sensor output and ground to absorb ESD and inductive switching spikes on 4–20 mA or 0–10 V lines. Use Value: Maintains signal integrity by clamping transients within 100 ns, with <1.0 μA leakage ensuring minimal offset error in precision measurement circuits. |
| Consumer Device USB Port Protection | Telecom Equipment DC Power Input |
Use Scenario: Adding secondary surge protection on VBUS line of USB-C ports in portable monitors and docking stations. IC Role / Device Role / Timing Role: Secondary TVS after primary polymer PTC, absorbing residual 10/1000 μs surges that bypass upstream protection. Use Value: Provides 600 W clamping headroom beyond USB-IF 10/1000 μs spec, extending system-level surge immunity to ±1 kV contact discharge. | Use Scenario: Front-end protection of -48 V DC telecom rectifier outputs feeding base station RF amplifiers. IC Role / Device Role / Timing Role: Unidirectional TVS connected anode-to-rail to suppress positive-going transients on negative supply rails. Use Value: Withstands repeated 100 A IFSM events and operates reliably at -40 to +125 °C ambient, meeting GR-1089-CORE surge immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ30A-E3/5B | Same SMB package, 30 V VBR, but 400 W PPPM (vs. 600 W); no AEC-Q101 qualification | Rated for commercial/industrial use only; not validated for automotive temperature cycling or humidity testing | Select when cost sensitivity outweighs automotive qualification and 600 W headroom is unnecessary |
| 1.5SMC30A | Higher-power SMC package (1500 W), same VBR/VC, but larger footprint (7.11 mm × 6.22 mm vs. SMB's 4.57 mm × 3.94 mm) | Used where PCB space allows and higher surge margin is required, e.g., AC/DC front-end protection | Choose when system-level surge test levels exceed IEC 61000-4-5 Level 4 and layout permits larger package |
Compared with SMAJ30A-E3/5B and 1.5SMC30A, the SM6T30AHE3_B/I uniquely delivers AEC-Q101 qualification, 600 W clamping capacity, and SMB footprint in a single RoHS/halogen-free construction-making it optimal for space-constrained automotive modules requiring production-grade reliability.
Availability
SM6T30AHE3_B/I is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, consumer USB power delivery, and telecom DC input protection requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SM6T30AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific performance.
The SM6T Series is engineered for robust transient suppression in harsh environments, targeting automotive, industrial, and telecom systems where consistent clamping behavior, AEC-Q101 validation, and surface-mount manufacturability are essential.
FAQ
What is the polarity configuration of the SM6T30AHE3_B/I?
The SM6T30AHE3_B/I is a unidirectional transient voltage suppressor diode. Its cathode is marked with a band on the SMB package body, and it conducts only in reverse bias during overvoltage events. This polarity ensures proper integration into DC power rails and signal lines where surge direction is known, such as automotive battery feeds or sensor output paths. The SM6T30AHE3_B/I does not conduct in forward bias except during fault conditions.
Does the SM6T30AHE3_B/I meet automotive reliability standards?
Yes, the SM6T30AHE3_B/I is AEC-Q101 qualified, confirming its suitability for automotive applications including engine control units, body electronics, and ADAS sensor modules. This qualification covers stress tests for temperature cycling, humidity, mechanical shock, and accelerated life testing. The "HE3" suffix explicitly denotes RoHS-compliant and AEC-Q101 qualified construction, distinguishing it from commercial-grade variants like SM6T30A-E3/5B.
What is the maximum clamping voltage of the SM6T30AHE3_B/I under surge conditions?
The SM6T30AHE3_B/I has a maximum clamping voltage (VC) of 41.5 V when subjected to a 10/1000 μs waveform with a peak pulse current (IPPM) of 14.5 A. This value is measured per JEDEC standards and represents the upper limit of voltage seen by downstream components during worst-case transient events. It ensures compatibility with 3.3 V, 5 V, and 12 V logic and power domains when properly placed in series with appropriate current-limiting impedance.
How does the SMB package of the SM6T30AHE3_B/I affect thermal performance?
The SMB (DO-214AA) package of the SM6T30AHE3_B/I provides a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead (RθJL) of 20 °C/W when mounted on 5.0 mm × 5.0 mm copper pads. This enables effective heat dissipation during repetitive surge events without heatsinking. The package's low profile and matte tin plating also ensure compatibility with standard reflow profiles and automated optical inspection in high-volume SMT lines.
Is the SM6T30AHE3_B/I compatible with lead-free reflow processes?
Yes, the SM6T30AHE3_B/I is fully compatible with lead-free reflow processes. It meets MSL Level 1 per J-STD-020 with a maximum peak temperature of 260 °C, eliminating the need for pre-baking. Its matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability standards, and the "HE3" suffix confirms RoHS compliance and halogen-free material content-ensuring reliability in modern eco-conscious manufacturing environments.
SM6T30AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- SM6T, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 25.6V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.5V
- Current - Peak Pulse (10/1000µs):
- 14.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SM6T30AHE3_B/I FAQ
1.How can I place an order for SM6T30AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM6T30AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM6T30AHE3_B/I reliable?
The price and inventory of SM6T30AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6T30AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SM6T30AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6T30AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM6T30AHE3_B/I?
SM6T30AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM6T30AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM6T30AHE3_B/I?
For technical support, including SM6T30AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6T30AHE3_B/I requirements.
6.How does Aetrix verify that SM6T30AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SM6T30AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6T30AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SM6T30AHE3_B/I?
All SM6T30AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SM6T30AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM6T30AHE3_B/I part is unused and in its original packaging.
Return procedure for SM6T30AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM6T30AHE3_B/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

