Vishay General Semiconductor - Diodes Division SM6T33AHE3_A/I
- Part No.:
- SM6T33AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SM6T33AHE3_A/I.pdf
- Description:
- TVS DIODE 28.2VWM 45.7VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:8,635
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Product details
Overview
SM6T33AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, rated for 33 V breakdown voltage (VBR = 31.4–34.7 V at 1 mA), 600 W peak pulse power (10/1000 μs), and clamping voltage of 45.7 V at 13.1 A. It provides robust ESD and surge protection for automotive sensor signal lines and MOSFET gate drivers.
For engineers reviewing the SM6T33AHE3_A/I datasheet, SM6T33AHE3_A/I pinout, SM6T33AHE3_A/I application, or SM6T33AHE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low clamping ratio (VC/VBR ≈ 1.4), and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
The SM6T33AHE3_A/I operates as a clamping-type overvoltage protector using an avalanche breakdown mechanism. Its glass-passivated silicon junction delivers stable reverse standoff voltage (VWM = 28.2 V), low leakage (<1 μA at VWM), and fast response to transients under 1 ns.
Designed for automotive-grade reliability, it meets AEC-Q101 stress testing requirements and is qualified for use in harsh environments with operating junction temperatures from –65 °C to +150 °C. Thermal resistance is 100 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead) under standard mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 31.4 V / 34.7 V at 1 mA - defines precise avalanche initiation threshold for repeatable clamping behavior |
| VWM | 28.2 V - maximum continuous reverse operating voltage before leakage exceeds 1 μA |
| VC @ IPPM | 45.7 V at 13.1 A (10/1000 μs) - actual clamped voltage during worst-case surge, limiting downstream stress |
| PPPM | 600 W - peak transient power handling capability per standardized waveform, critical for ISO 7637-2 pulse 1/2a/5a compliance |
| TJ max | +150 °C - enables operation in under-hood automotive environments without derating below ambient |
| Package | SMB (DO-214AA) - surface-mount outline with 2.20 mm height and 5.59 mm length, optimized for high-density PCB layouts |
| AEC-Q101 | Qualified - validated for automotive electronics per stress test requirements including HTGB, HTRB, and TCT |
Pinout & Package
SMB (DO-214AA) package with matte tin-plated leads, compliant with J-STD-002 and JESD 22-B102 solderability standards. Cathode indicated by band marking; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when VRM exceeded |
| Anode (unmarked end) | Reference node | Typically tied to system ground or low-impedance return path for effective clamping |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Supports automotive load-dump and inductive-switching surge immunity per ISO 7637-2 Level III/IV |
| Glass passivated junction | Ensures long-term stability of VBR and leakage under thermal cycling and humidity exposure |
| MSL Level 1 (260 °C peak) | Enables single-reflow assembly without moisture sensitivity concerns or baking requirements |
| AEC-Q101 qualification | Validates reliability for automotive powertrain, body control, and ADAS sensor modules |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes voltage overshoot during clamping, protecting 3.3 V/5 V logic interfaces downstream |
Applications
| Automotive Sensor Protection | Industrial PLC I/O Protection |
|---|---|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from ESD and load dump in vehicle ECUs. IC Role / Device Role: Unidirectional TVS placed between signal line and chassis ground to clamp transients before reaching IC input pins. Use Value: Limits clamped voltage to 45.7 V while sustaining 13.1 A surge, preserving signal integrity and preventing latch-up in 5 V tolerant receivers. | Use Scenario: Safeguarding digital input channels of programmable logic controllers against field-wiring surges and relay contact bounce. IC Role / Device Role: Standoff protection device mounted at connector entry point to shunt induced energy before reaching optocoupler or MCU GPIO. Use Value: Withstands 600 W pulses and maintains <1 μA leakage at 28.2 V, ensuring no false triggering during normal 24 V DC operation. |
| MOSFET Gate Driver Protection | Consumer Power Adapter Input Stage |
Use Scenario: Shielding high-side N-channel MOSFET gates in automotive motor drivers from Miller-induced voltage spikes during switching transitions. IC Role / Device Role: Low-inductance TVS connected directly between gate and source to clamp dv/dt-induced overshoot. Use Value: Fast avalanche response (<1 ns) and low RθJL (20 °C/W) prevent gate oxide breakdown during repetitive 100 kHz PWM edge transients. | Use Scenario: Secondary-side transient suppression in AC/DC adapters for smart home devices exposed to lightning-induced surges on DC output rails. IC Role / Device Role: Unidirectional clamp on regulated 5 V/12 V output to protect USB-PD controllers and microcontrollers. Use Value: 28.2 V standoff allows safe operation across full load range while clamping to 45.7 V-well below typical 60 V absolute maximum ratings of downstream ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33A | Same VBR range (31.4–34.7 V), but lower PPPM = 400 W; SMA package (smaller footprint, higher RθJA = 140 °C/W) | Not AEC-Q101 qualified; suitable for commercial-grade consumer products only | Select when cost or board space is prioritized over automotive reliability and surge margin |
| 1.5SMC33A | Higher PPPM = 1500 W, same VBR, but larger SMC package (DO-214AB); non-AEC-Q101 | Used in industrial power supplies where higher surge margin is required and board area permits | Choose when legacy designs require backward-compatible SMC footprint and >600 W headroom is needed |
Compared with SMAJ33A and 1.5SMC33A, the SM6T33AHE3_A/I uniquely combines AEC-Q101 qualification, SMB form factor, and 600 W rating-making it optimal for space-constrained automotive modules requiring certified reliability without sacrificing surge performance.
Availability
SM6T33AHE3_A/I is available at Aetrix Electronics and suitable for automotive sensor systems, industrial PLC I/O modules, and MOSFET gate driver circuits requiring stable component supply, AEC-Q101 compliance, and consistent surge immunity performance.
Supply support for SM6T33AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SM6T Series was developed specifically for automotive and industrial transient suppression, delivering high-power clamping in compact surface-mount packages with AEC-Q101 validation and MSL Level 1 reflow compatibility.
FAQ
What is the exact breakdown voltage tolerance for SM6T33AHE3_A/I?
The SM6T33AHE3_A/I has a specified breakdown voltage range of 31.4 V to 34.7 V at 1 mA test current, per Vishay's datasheet Document Number 88385. This ±5% tolerance ensures predictable clamping onset across production lots and temperature ranges, critical for maintaining design margins in automotive safety-critical circuits.
Is SM6T33AHE3_A/I suitable for bidirectional transient protection?
No, SM6T33AHE3_A/I is a unidirectional TVS diode, identified by its "A" suffix and cathode band marking. For bidirectional protection, Vishay offers the SM6T33CA variant (with "CA" suffix), which provides symmetrical clamping in both polarities and no polarity marking on the package.
Does SM6T33AHE3_A/I require special PCB layout considerations?
Yes-optimal performance requires mounting SM6T33AHE3_A/I on minimum 5.0 mm × 5.0 mm copper pads per terminal to achieve rated 600 W pulse power. Trace inductance must be minimized: keep leads short and wide, avoid vias near terminals, and route the cathode directly to a solid ground plane to preserve sub-ns response time.
What does the "HE3_A/I" suffix indicate in SM6T33AHE3_A/I?
The "HE3" denotes RoHS-compliant construction with AEC-Q101 qualification; "A" is the revision code; "I" specifies packaging in 13-inch tape-and-reel format (3200 units/reel). This distinguishes it from "H" (7-inch reel, 750 units) and confirms automotive-grade traceability and reliability screening.
How does SM6T33AHE3_A/I perform under repeated surge stress?
SM6T33AHE3_A/I is characterized for non-repetitive pulses per Fig. 3 in the datasheet. While not rated for repetitive surges, its 150 °C max junction temperature and low thermal resistance (RθJL = 20 °C/W) allow limited repetition if pulse intervals permit sufficient cooling-designers should verify cumulative heating in their specific application using Fig. 2 derating curves.
SM6T33AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- SM6T, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28.2V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 13.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SM6T33AHE3_A/I FAQ
1.How can I place an order for SM6T33AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM6T33AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM6T33AHE3_A/I reliable?
The price and inventory of SM6T33AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6T33AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM6T33AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6T33AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM6T33AHE3_A/I?
SM6T33AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM6T33AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM6T33AHE3_A/I?
For technical support, including SM6T33AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6T33AHE3_A/I requirements.
6.How does Aetrix verify that SM6T33AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM6T33AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6T33AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM6T33AHE3_A/I?
All SM6T33AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM6T33AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM6T33AHE3_A/I part is unused and in its original packaging.
Return procedure for SM6T33AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM6T33AHE3_A/I Tags

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Toshiba Semiconductor and Storage

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