Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM6T39AHE3/5B

Part No.:
SM6T39AHE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSM6T39AHE3/5B.pdf
Description:
TVS DIODE 33.3VWM 53.9VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,159

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM6T39AHE3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 33.3 V stand-off voltage (VWM), 37.1–41.0 V breakdown voltage (VBR at 1 mA), 53.9 V max clamping voltage at 11.1 A (10/1000 μs), 600 W peak pulse power, and AEC-Q101 qualification for automotive use.

For engineers reviewing the SM6T39AHE3/5B datasheet, SM6T39AHE3/5B pinout, SM6T39AHE3/5B application, or SM6T39AHE3/5B equivalent, key selection criteria include clamping performance under 10/1000 μs surge, unidirectional polarity with cathode band marking, thermal resistance (RθJA = 100 °C/W), and compliance with automotive reliability standards.

Technical Context

The SM6T39AHE3/5B operates as a unidirectional avalanche diode, leveraging glass-passivated junction technology to deliver precise reverse-breakdown triggering and low-inductance transient suppression. Its clamping behavior is defined by a 10/1000 μs waveform test condition, with guaranteed VC ≤ 53.9 V at IPPM = 11.1 A.

Designed for surface-mount assembly on 5.0 mm × 5.0 mm copper pads per terminal, it meets J-STD-020 MSL Level 1 (260 °C peak reflow) and supports operation from –65 °C to +150 °C junction temperature. The device is RoHS-compliant and qualified to AEC-Q101 for automotive-grade robustness.

Key Specifications

ParameterValue and Actual Design Meaning
VWM33.3 V - Maximum continuous reverse operating voltage before leakage exceeds 1 μA; defines safe DC bias margin.
VBR (min/max)37.1 V / 41.0 V at IT = 1 mA - Confirmed avalanche onset range; ensures predictable turn-on during transients.
VC @ IPPM53.9 V at 11.1 A (10/1000 μs) - Clamped voltage seen by protected circuit; limits stress on downstream ICs or MOSFETs.
PPPM600 W - Peak transient energy absorption capability; sustains standard lightning/surge immunity tests.
RθJA100 °C/W - Junction-to-ambient thermal resistance; requires adequate PCB copper area for thermal management.
TJ max.+150 °C - Maximum allowable junction temperature; enables use in under-hood automotive environments.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking on body.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry / Reverse voltage referenceConnected to lower-potential side (e.g., ground or return path); defines unidirectional conduction direction.
CathodeAvalanche clamping node / Transient sinkMarked with band; connected to line being protected (e.g., 12 V rail or sensor output); conducts surge current to ground.

Key Features

FeatureDesign Value
Glass-passivated junctionEnsures stable, repeatable breakdown voltage and long-term reliability under repeated surge stress.
600 W peak pulse power (10/1000 μs)Meets IEC 61000-4-5 Level 3 (1 kV line-to-line, 2 kV line-to-ground) surge immunity requirements.
AEC-Q101 qualificationValidated for automotive applications including engine control units, body electronics, and ADAS sensor interfaces.
Low inductance SMB packageMinimizes voltage overshoot during fast transients (< 1 ns rise time), improving protection fidelity.

Applications

Automotive Power Rail ProtectionIndustrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs against load dump and alternator transients in passenger vehicles.

IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between power input and ground to limit voltage excursions to ≤53.9 V.

Use Value: Prevents damage to microcontrollers and CAN transceivers during ISO 7637-2 Pulse 5a (load dump) events.

Use Scenario: Safeguarding analog outputs of pressure or temperature sensors in factory automation systems.

IC Role / Device Role / Timing Role: Standoff-clamp TVS on 4–20 mA or 0–10 V signal lines exposed to ESD and inductive switching noise.

Use Value: Maintains signal integrity by limiting transients to sub-55 V while adding < 1 pF capacitance at zero bias.

Consumer Power Adapter Input ProtectionTelecom DC Power Feeder Protection

Use Scenario: Front-end surge suppression in AC/DC adapters for laptops and monitors subjected to mains-borne surges.

IC Role / Device Role / Timing Role: Primary clamping device on secondary-side DC output (e.g., 19 V rail) before DC-DC regulation.

Use Value: Absorbs 600 W pulses without degradation, enabling compact design with no external heat sinking required.

Use Scenario: Overvoltage protection on -48 V DC feeder lines in telecom base stations and remote radio units.

IC Role / Device Role / Timing Role: Unidirectional TVS referenced to system ground, clamping positive-going surges on negative supply rails.

Use Value: Withstands repeated 10/1000 μs surges up to 11.1 A while maintaining VWM = 33.3 V for stable bias operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ33A-E3/52Same SMB package, VWM = 33 V, VC = 53.3 V @ 11.2 A, but not AEC-Q101 qualified.Limited to commercial/industrial use; lacks automotive qualification testing and traceability.Select when AEC-Q101 is not required and cost sensitivity outweighs automotive reliability needs.
P6SMB33AHE3_A/HSame electrical specs (VWM = 33 V, VC = 53.9 V), identical AEC-Q101 qualification, but uses legacy P6SMB prefix and different reel packaging (7" tape).No functional difference; differs only in part numbering convention and delivery format.Select when legacy BOM alignment or specific reel size (7") is mandated by production planning.

Compared with SM6T39AHE3/5B, SMBJ33A-E3/52 offers identical clamping performance but lacks automotive qualification, while P6SMB33AHE3_A/H matches all electrical and reliability specs but uses alternate naming and packaging-making it a direct specification-equivalent alternative.

Availability

SM6T39AHE3/5B is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, consumer power adapters, and telecom DC power systems requiring stable component supply with AEC-Q101 assurance and consistent surge performance.

Supply support for SM6T39AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The SM6T Series is engineered for high-energy transient suppression in space-constrained, high-reliability applications-particularly where automotive qualification, low clamping voltage, and automated SMT placement are critical.

FAQ

What is the maximum clamping voltage of the SM6T39AHE3/5B under standard surge conditions?

The SM6T39AHE3/5B has a maximum clamping voltage (VC) of 53.9 V when subjected to a 10/1000 μs waveform at its peak pulse current of 11.1 A. This value is measured per JEDEC standards and guarantees the protected circuit sees no more than 53.9 V during such transients. The SM6T39AHE3/5B maintains this clamping performance across its rated temperature range and after repeated surge events, provided derating guidelines are followed.

Is the SM6T39AHE3/5B suitable for automotive applications?

Yes, the SM6T39AHE3/5B is explicitly AEC-Q101 qualified, as confirmed by Vishay's documentation and ordering code suffix "HE3". It undergoes stress testing for temperature cycling, humidity, mechanical shock, and surge endurance required for automotive under-hood and cabin modules. The SM6T39AHE3/5B is commonly used in engine control units, body control modules, and ADAS sensor power rails where reliability under harsh conditions is mandatory.

What does the "HE3" suffix indicate in SM6T39AHE3/5B?

The "HE3" suffix in SM6T39AHE3/5B denotes RoHS-compliant construction with AEC-Q101 qualification. It distinguishes this variant from commercial-grade "E3" parts and halogen-free "HM3" versions. The "HE3" designation confirms full compliance with automotive reliability standards, traceable lot control, and extended temperature operation (–65 °C to +150 °C). The SM6T39AHE3/5B is manufactured and tested to meet these exact specifications.

How does the SMB (DO-214AA) package of the SM6T39AHE3/5B affect PCB layout?

The SMB package of the SM6T39AHE3/5B requires minimum 5.0 mm × 5.0 mm copper pad areas per terminal for optimal thermal dissipation and surge current handling. Its low-profile form factor (max height 1.95 mm) supports dense layouts and automated placement. The cathode band must be oriented correctly per silkscreen; incorrect polarity renders the SM6T39AHE3/5B ineffective for unidirectional protection. Pad dimensions follow Vishay's recommended outline (0.086" × 0.130").

What is the reverse leakage current of the SM6T39AHE3/5B at its stand-off voltage?

At its maximum stand-off voltage (VWM = 33.3 V), the SM6T39AHE3/5B exhibits a maximum reverse leakage current (ID) of 1.0 μA at 25 °C. This low leakage ensures minimal power loss in standby mode and avoids false triggering in high-impedance circuits. Leakage remains below 10 μA up to 80 % of VWM and is fully characterized across the –65 °C to +150 °C operating range. The SM6T39AHE3/5B maintains this spec in both initial and post-surge conditions.

SM6T39AHE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
SM6T, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
33.3V
Voltage - Breakdown (Min):
37.1V
Voltage - Clamping (Max) @ Ipp:
53.9V
Current - Peak Pulse (10/1000µs):
11.1A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SM6T39AHE3/5B FAQ

1.How can I place an order for SM6T39AHE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SM6T39AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM6T39AHE3/5B reliable?

The price and inventory of SM6T39AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6T39AHE3/5B is usually 5 days.

3.What payment methods are accepted for SM6T39AHE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6T39AHE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM6T39AHE3/5B?

SM6T39AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM6T39AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM6T39AHE3/5B?

For technical support, including SM6T39AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6T39AHE3/5B requirements.

6.How does Aetrix verify that SM6T39AHE3/5B is sourced from the original manufacturer or authorized distributors?

All SM6T39AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6T39AHE3/5B meets industry standards.

7.What is the process for return or replacement of SM6T39AHE3/5B?

All SM6T39AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SM6T39AHE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM6T39AHE3/5B part is unused and in its original packaging.

Return procedure for SM6T39AHE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM6T39AHE3/5B Tags

  • SM6T39AHE3/5B
  • SM6T39AHE3/5B PDF
  • SM6T39AHE3/5B Datasheet
  • SM6T39AHE3/5B Specifications
  • SM6T39AHE3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM6T39AHE3/5B
  • Buy SM6T39AHE3/5B
  • SM6T39AHE3/5B Price
  • SM6T39AHE3/5B Distributor
  • SM6T39AHE3/5B Supplier
  • SM6T39AHE3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER