Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM6T39AHE3_B/I

Part No.:
SM6T39AHE3_B/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSM6T39AHE3_B/I.pdf
Description:
600W,39V 5%,UNIDIR,SMB TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,115

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM6T39AHE3_B/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, rated for 39 V breakdown voltage (VBR = 37.1–41.0 V at 1.0 mA), 53.9 V maximum clamping voltage (VC) at 11.1 A peak pulse current, and 600 W peak pulse power with 10/1000 μs waveform. It provides robust ESD and surge protection for automotive sensor signal lines and MOSFET gate drivers.

For engineers reviewing the SM6T39AHE3_B/I datasheet, SM6T39AHE3_B/I pinout, SM6T39AHE3_B/I application, or SM6T39AHE3_B/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low clamping ratio (VC/VBR ≈ 1.38), and compatibility with automated SMT placement on standard PCB pad layouts.

Technical Context

This TVS diode operates as a voltage-clamped shunt protector: under normal bias it presents high impedance (<1.0 μA reverse leakage at 33.3 V), but triggers avalanche conduction when transient voltage exceeds VBR, limiting downstream voltage to ≤53.9 V at 11.1 A. Its glass-passivated junction ensures stable breakdown and low inductance for fast response to sub-microsecond transients.

Designed for surface-mount reliability, the device meets MSL Level 1 per J-STD-020, supports 260 °C lead-free reflow, and features matte tin-plated leads compliant with J-STD-002 and JESD 22-B102. The SMB package delivers thermal resistance of 100 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead).

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/max)37.1 V / 41.0 V at 1.0 mA - defines precise avalanche onset threshold for repeatable clamping behavior
VWM33.3 V - maximum continuous reverse operating voltage before significant leakage begins
VC @ IPPM53.9 V at 11.1 A (10/1000 μs) - actual clamped voltage seen by protected circuit during worst-case surge
PPPM600 W - peak transient energy absorption capability without failure under standardized surge waveform
TJ max+150 °C - enables operation in under-hood automotive environments and industrial enclosures
QualificationAEC-Q101 qualified - validated for automotive-grade reliability including temperature cycling and HTRB
RθJA100 °C/W - determines required PCB copper area (0.2" × 0.2") for thermal management at 5.0 W steady-state dissipation

Pinout & Package

Package: SMB (DO-214AA), surface-mount, unidirectional polarity marked by cathode band. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); weight 0.106 g.

Pin/TerminalCircuit RoleDesign Meaning
Cathode (banded end)Anode-side connection point for reverse-biased operationConnected to protected line; clamps to ground when transient exceeds VWM
AnodeReference/ground return pathMust be routed to low-impedance system ground plane to ensure effective clamping

Key Features

FeatureDesign Value
Glass-passivated junctionEnsures stable VBR tolerance and long-term reliability under repeated surge stress
Low-inductance SMB packageMinimizes voltage overshoot during fast-rising transients (e.g., ISO 7637-2 Pulse 1/2a)
AEC-Q101 qualificationValidates suitability for automotive powertrain, body control, and ADAS sensor modules
MSL Level 1 ratingEnables single-pass lead-free reflow without moisture sensitivity concerns
Matte tin platingGuarantees solderability and whisker resistance per JESD 201 Class 2

Applications

Automotive Sensor ProtectionIndustrial Motor Drive Gate Protection

Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from load dump and inductive switching spikes in vehicle ECUs.

IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between signal line and chassis ground to clamp transients before they reach IC input pins.

Use Value: Limits voltage to ≤53.9 V during 10/1000 μs surges up to 11.1 A, preserving signal integrity and preventing latch-up in 3.3 V/5 V interface ICs.

Use Scenario: Safeguarding high-side/low-side MOSFET gate drivers in variable-frequency drives against Miller-induced voltage spikes and cross-conduction transients.

IC Role / Device Role / Timing Role: TVS connected from gate-to-source to suppress dv/dt-induced false turn-on and gate oxide overstress.

Use Value: Clamps gate-source voltage to safe levels within nanoseconds, enabling reliable 600 V-class IGBT/MOSFET switching without derating.

Consumer Power Adapter Input ProtectionTelecom Line Interface Surge Suppression

Use Scenario: Secondary-side overvoltage protection in AC/DC adapters and USB PD chargers exposed to lightning-induced surges on DC output rails.

IC Role / Device Role / Timing Role: Unidirectional TVS placed across regulated 5 V/9 V/12 V outputs to absorb residual transients escaping primary-side protection.

Use Value: Absorbs 600 W peak pulses without degradation, maintaining output regulation and preventing damage to connected devices like smartphones or laptops.

Use Scenario: Front-end protection of Ethernet PHYs, DSL line cards, and PoE injectors against induced surges from nearby power lines or ESD events.

IC Role / Device Role / Timing Role: TVS installed on differential pairs (e.g., TX+/TX−) referenced to common-mode ground to suppress common-mode transients.

Use Value: Provides <1.0 μA leakage at 33.3 V, ensuring minimal impact on signal integrity while delivering 53.9 V clamping for IEEE C62.41-compliant surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ39A-E3/52Same SMB package, identical VBR (37.1–41.0 V) and VC (53.9 V), but commercial-grade (non-AEC-Q101) and RoHS-compliant only (no halogen-free option)Lacks automotive qualification; suitable for industrial/commercial designs where AEC-Q101 is not mandatedSelect SMAJ39A-E3/52 when cost sensitivity outweighs automotive reliability requirements
SMCJ39A-QHHigher-power SMC (DO-214AB) package (1500 W PPPM), same VBR/VC specs, AEC-Q101 qualified, but 2.5× larger footprint and higher RθJA (60 °C/W)Used where higher surge margin is needed (e.g., 24 V truck systems), but requires PCB layout changeChoose SMCJ39A-QH only if system-level testing confirms need for >600 W clamping capacity

Compared with SMAJ39A-E3/52 and SMCJ39A-QH, the SM6T39AHE3_B/I uniquely balances AEC-Q101 compliance, compact SMB footprint, and verified 600 W surge handling-making it optimal for space-constrained automotive modules requiring zero-layout-change upgrades from commercial equivalents.

Availability

SM6T39AHE3_B/I is available at Aetrix Electronics and suitable for automotive sensor modules, industrial motor drives, consumer power adapters, and telecom line interfaces requiring stable component supply with full traceability and lifecycle support.

Supply support for SM6T39AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific performance.

The SM6T Series was developed specifically for surface-mount transient suppression in automotive, industrial, and consumer electronics-prioritizing low clamping voltage, AEC-Q101 qualification, and compatibility with high-speed automated assembly.

FAQ

What is the exact breakdown voltage range specified for SM6T39AHE3_B/I?

The SM6T39AHE3_B/I has a guaranteed breakdown voltage (VBR) range of 37.1 V to 41.0 V at a test current of 1.0 mA, as confirmed in the Vishay SM6T datasheet revision 09-Jan-2024. This tight tolerance ensures predictable clamping onset across production lots and temperature ranges, critical for protecting 33 V-rated circuits. The SM6T39AHE3_B/I maintains this specification under all qualified operating conditions.

Is SM6T39AHE3_B/I qualified for automotive applications?

Yes, the SM6T39AHE3_B/I is explicitly AEC-Q101 qualified, as indicated by the "HE3" suffix and documented in Vishay's ordering information table. It undergoes stress testing for temperature cycling, high-temperature reverse bias, and humidity resistance per AEC-Q101 standards. This makes the SM6T39AHE3_B/I suitable for under-hood and cabin-mounted automotive electronics where reliability is mandatory.

What is the maximum clamping voltage of SM6T39AHE3_B/I during a 10/1000 μs surge event?

The SM6T39AHE3_B/I clamps to a maximum of 53.9 V when subjected to its rated peak pulse current of 11.1 A with a 10/1000 μs waveform. This value is measured per Figure 1 in the Vishay SM6T datasheet and represents the actual voltage imposed on the protected circuit during worst-case transient conditions. The SM6T39AHE3_B/I achieves this with a clamping ratio of approximately 1.38 relative to its nominal VBR.

Does SM6T39AHE3_B/I have a bidirectional variant?

No, the SM6T39AHE3_B/I is strictly unidirectional, as indicated by the "A" suffix and absence of "CA" in its part number. Bidirectional variants (e.g., SM6T39CAHE3_B/I) exist in the same family but feature symmetric breakdown in both directions and no polarity marking. Using the unidirectional SM6T39AHE3_B/I in bidirectional signal paths would result in forward conduction during negative transients and must be avoided.

What package type and mounting requirements apply to SM6T39AHE3_B/I?

The SM6T39AHE3_B/I uses the SMB (DO-214AA) surface-mount package with cathode band marking, requiring 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal for thermal derating compliance. It is MSL Level 1 and compatible with standard lead-free reflow profiles peaking at 260 °C. The SM6T39AHE3_B/I must be mounted with the banded end oriented toward the protected line and anode tied to ground for correct unidirectional operation.

SM6T39AHE3_B/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
SM6T, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
33.3V
Voltage - Breakdown (Min):
37.1V
Voltage - Clamping (Max) @ Ipp:
53.9V
Current - Peak Pulse (10/1000µs):
11.1A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SM6T39AHE3_B/I FAQ

1.How can I place an order for SM6T39AHE3_B/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SM6T39AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM6T39AHE3_B/I reliable?

The price and inventory of SM6T39AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6T39AHE3_B/I is usually 5 days.

3.What payment methods are accepted for SM6T39AHE3_B/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6T39AHE3_B/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM6T39AHE3_B/I?

SM6T39AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM6T39AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM6T39AHE3_B/I?

For technical support, including SM6T39AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6T39AHE3_B/I requirements.

6.How does Aetrix verify that SM6T39AHE3_B/I is sourced from the original manufacturer or authorized distributors?

All SM6T39AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6T39AHE3_B/I meets industry standards.

7.What is the process for return or replacement of SM6T39AHE3_B/I?

All SM6T39AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SM6T39AHE3_B/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM6T39AHE3_B/I part is unused and in its original packaging.

Return procedure for SM6T39AHE3_B/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM6T39AHE3_B/I Tags

  • SM6T39AHE3_B/I
  • SM6T39AHE3_B/I PDF
  • SM6T39AHE3_B/I Datasheet
  • SM6T39AHE3_B/I Specifications
  • SM6T39AHE3_B/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM6T39AHE3_B/I
  • Buy SM6T39AHE3_B/I
  • SM6T39AHE3_B/I Price
  • SM6T39AHE3_B/I Distributor
  • SM6T39AHE3_B/I Supplier
  • SM6T39AHE3_B/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER