Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM6T6V8AHM3_B/I

Part No.:
SM6T6V8AHM3_B/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSM6T6V8AHM3_B/I.pdf
Description:
600W,6.8V 5%,UNIDIR,SMB TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,939

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM6T6V8AHM3_B/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, with 6.45 V minimum breakdown voltage (VBR), 5.80 V stand-off voltage (VWM), 10.5 V maximum clamping voltage (VC) at 57 A peak pulse current, and 600 W peak pulse power rating per 10/1000 μs waveform. It protects MOSFETs and ICs in automotive sensor signal lines against inductive switching transients.

For engineers reviewing the SM6T6V8AHM3_B/I datasheet, SM6T6V8AHM3_B/I pinout, SM6T6V8AHM3_B/I application, or SM6T6V8AHM3_B/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, 150 °C max junction temperature, low-inductance SMB package, and 1000 μA max reverse leakage at VWM.

Technical Context

This TVS diode operates as a clamping device in parallel with sensitive circuit nodes, conducting only when reverse voltage exceeds VBR (6.45–7.14 V). Its glass-passivated junction ensures stable breakdown behavior under repetitive surge stress.

Designed for surface-mount automated placement, it delivers 600 W peak pulse power handling with 10/1000 μs waveform and meets MSL Level 1 per J-STD-020 at 260 °C reflow peak. Thermal resistance is 100 °C/W junction-to-ambient on standard 0.2" × 0.2" copper pads.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/max)6.45 V / 7.14 V - defines precise clamping onset threshold under 10 mA test current
VWM5.80 V - maximum continuous reverse operating voltage before leakage rises significantly
VC @ IPPM10.5 V @ 57 A - clamped voltage during 600 W transient, limiting stress on protected IC
IPPM57 A - peak pulse current capability with 10/1000 μs waveform, derated above 25 °C
PPPM600 W - transient energy absorption capacity without failure, critical for load-switching protection
TJ max+150 °C - enables operation in under-hood automotive environments and industrial enclosures
Leakage @ VWM1000 μA - low standby current preserves signal integrity in high-impedance sensor interfaces

Pinout & Package

Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, AEC-Q101 qualified. Cathode indicated by band; anode is unmarked end.

Pin/TerminalCircuit RoleDesign Meaning
Cathode (banded end)Transient conduction path to groundConnects to protected node; conducts surge current to reference plane when VREV > VBR
Anode (unmarked end)Reference return pathTypically tied to system ground or low-impedance return; completes clamping loop during overvoltage event

Key Features

FeatureDesign Value
600 W peak pulse powerEnables robust protection against ISO 7637-2 Pulse 1/2a/5a transients in 12 V automotive systems
AEC-Q101 qualificationValidated reliability for automotive powertrain, body control, and ADAS sensor modules
Low inductance SMB packageMinimizes voltage overshoot during fast-rising ESD or lightning-induced surges (e.g., IEC 61000-4-5)
Glass passivated junctionEnsures stable VBR and low parameter drift over temperature and lifetime cycling
MSL Level 1 ratingSupports single-reflow assembly without moisture sensitivity concerns or baking requirements

Applications

Automotive Sensor ProtectionIndustrial PLC Input Protection

Use Scenario: Protecting analog output lines of pressure/temperature sensors in engine control units exposed to alternator load dump and relay coil flyback.

IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between sensor output and microcontroller ADC input.

Use Value: Limits transient voltage to ≤10.5 V, preventing ADC saturation and latch-up while maintaining <1 μA leakage at 5.8 V nominal supply.

Use Scenario: Safeguarding 24 V digital input channels on programmable logic controllers subjected to field-wiring induced surges.

IC Role / Device Role / Timing Role: Parallel-connected TVS on each optocoupler input line to shunt inductive kickback from solenoid drivers.

Use Value: Absorbs 600 W pulses without degradation, preserving input logic thresholds and enabling compliance with IEC 61000-4-4 level 4 immunity.

Consumer Power Adapter InterfaceTelecom Line Card Surge Suppression

Use Scenario: Shielding USB-C CC and VCONN lines in AC/DC adapters from ESD and hot-plug transients.

IC Role / Device Role / Timing Role: Low-capacitance unidirectional TVS mounted directly at connector entry point.

Use Value: Clamps 8 kV contact ESD to <10.5 V within nanoseconds, avoiding data corruption while adding <0.5 pF parasitic capacitance.

Use Scenario: Front-end protection of Ethernet PHY interface on telecom base station line cards exposed to lightning-induced surges on PoE lines.

IC Role / Device Role / Timing Role: First-stage clamping device ahead of integrated PoE controller and magnetics.

Use Value: Handles 10/1000 μs surges up to 57 A, reducing downstream voltage stress and enabling compliance with GR-1089-CORE Zone 3 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ6.8A-E3/5BSame SMB package, 6.8 V nominal VBR, but rated for 400 W PPPM and not AEC-Q101 qualifiedApproved for commercial/industrial use only; lacks automotive qualification and higher surge marginSelect when cost sensitivity outweighs automotive qualification and 600 W surge headroom
1.5SMC6.8ASame VBR range, but larger SMC (DO-214AB) package, 600 W rating, no AEC-Q101 certificationRequires larger PCB footprint; suitable where board space permits and automotive grade not requiredChoose for legacy designs using SMC footprints or where thermal dissipation margin justifies larger case

Compared with SMAJ6.8A-E3/5B and 1.5SMC6.8A, SM6T6V8AHM3_B/I provides AEC-Q101 qualification, halogen-free construction, and identical SMB footprint with full 600 W rating-making it the preferred choice for new automotive and high-reliability industrial designs requiring validated long-term surge endurance.

Availability

SM6T6V8AHM3_B/I is available at Aetrix Electronics and suitable for automotive sensor modules, industrial PLC inputs, consumer power adapter interfaces, and telecom line card surge suppression requiring stable component supply and traceable sourcing.

Supply support for SM6T6V8AHM3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and application-specific performance.

The SM6T Series is engineered for high-energy transient suppression in harsh environments, targeting automotive, industrial, and telecom applications where AEC-Q101 qualification, low clamping voltage, and consistent surge endurance are mandatory.

FAQ

What is the clamping voltage of SM6T6V8AHM3_B/I at its rated peak pulse current?

The SM6T6V8AHM3_B/I has a maximum clamping voltage (VC) of 10.5 V at 57 A peak pulse current (IPPM) under the standard 10/1000 μs waveform. This value is measured per JEDEC standards and ensures protected downstream components experience limited overvoltage stress during transient events. The SM6T6V8AHM3_B/I maintains this clamping performance across its specified operating temperature range.

Is SM6T6V8AHM3_B/I qualified for automotive applications?

Yes, SM6T6V8AHM3_B/I is AEC-Q101 qualified, as confirmed by its HM3 suffix and documentation in Vishay's SM6T series datasheet (Doc. #88385, Rev. 09-Jan-2024). This qualification validates its reliability for automotive powertrain, body electronics, and ADAS sensor systems. The SM6T6V8AHM3_B/I undergoes stress testing including temperature cycling, humidity bias, and surge endurance per AEC-Q101 requirements.

What is the package type and mounting configuration of SM6T6V8AHM3_B/I?

SM6T6V8AHM3_B/I uses the SMB (DO-214AA) surface-mount package with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. It features a cathode band marking and is designed for automated pick-and-place assembly. The SM6T6V8AHM3_B/I requires 0.2" × 0.2" copper pads per terminal for optimal thermal and surge performance per datasheet recommendations.

How does the breakdown voltage tolerance of SM6T6V8AHM3_B/I affect circuit design?

The SM6T6V8AHM3_B/I has a VBR range of 6.45 V to 7.14 V at 10 mA test current, providing a ±5% typical tolerance around the nominal 6.8 V rating. Designers must ensure the protected circuit's maximum working voltage remains below 5.80 V (VWM) to avoid excessive leakage, while verifying that the clamping action engages before damaging levels occur. This tolerance is factored into the SM6T6V8AHM3_B/I's safe operating margin in real-world surge conditions.

What is the maximum reverse leakage current specification for SM6T6V8AHM3_B/I at its stand-off voltage?

At its 5.80 V stand-off voltage (VWM), the SM6T6V8AHM3_B/I specifies a maximum reverse leakage current (ID) of 1000 μA at 25 °C. This value increases with temperature but remains within acceptable limits for high-impedance sensor interfaces and logic inputs. The SM6T6V8AHM3_B/I's low leakage supports accurate analog measurements and prevents false triggering in voltage-sensitive circuits.

SM6T6V8AHM3_B/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
SM6T, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
5.8V
Voltage - Breakdown (Min):
6.45V
Voltage - Clamping (Max) @ Ipp:
10.5V
Current - Peak Pulse (10/1000µs):
57A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SM6T6V8AHM3_B/I FAQ

1.How can I place an order for SM6T6V8AHM3_B/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SM6T6V8AHM3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM6T6V8AHM3_B/I reliable?

The price and inventory of SM6T6V8AHM3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM6T6V8AHM3_B/I is usually 5 days.

3.What payment methods are accepted for SM6T6V8AHM3_B/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM6T6V8AHM3_B/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM6T6V8AHM3_B/I?

SM6T6V8AHM3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM6T6V8AHM3_B/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM6T6V8AHM3_B/I?

For technical support, including SM6T6V8AHM3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM6T6V8AHM3_B/I requirements.

6.How does Aetrix verify that SM6T6V8AHM3_B/I is sourced from the original manufacturer or authorized distributors?

All SM6T6V8AHM3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM6T6V8AHM3_B/I meets industry standards.

7.What is the process for return or replacement of SM6T6V8AHM3_B/I?

All SM6T6V8AHM3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SM6T6V8AHM3_B/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM6T6V8AHM3_B/I part is unused and in its original packaging.

Return procedure for SM6T6V8AHM3_B/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM6T6V8AHM3_B/I Tags

  • SM6T6V8AHM3_B/I
  • SM6T6V8AHM3_B/I PDF
  • SM6T6V8AHM3_B/I Datasheet
  • SM6T6V8AHM3_B/I Specifications
  • SM6T6V8AHM3_B/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM6T6V8AHM3_B/I
  • Buy SM6T6V8AHM3_B/I
  • SM6T6V8AHM3_B/I Price
  • SM6T6V8AHM3_B/I Distributor
  • SM6T6V8AHM3_B/I Supplier
  • SM6T6V8AHM3_B/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER