Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Texas Instruments SM72295MAE/NOPB

Part No.:
SM72295MAE/NOPB
Manufacturer:
Texas Instruments
Category:
Power Management - Specialized
Package:
28-SOIC (0.295", 7.50mm Width)
Datasheet:
AetrixSM72295MAE/NOPB.pdf
Description:
IC PHOTO FULL BRIDGE DR 28SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,011

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM72295MAE/NOPB from Texas Instruments is a photovoltaic full-bridge gate driver IC designed to control four discrete N-channel MOSFETs in high-voltage renewable energy inverters. It delivers 3A peak gate drive current per channel, integrates 100V bootstrap diodes, and features two transconductance current sense amplifiers with externally programmable gain for input/output current monitoring in solar microinverters.

For engineers reviewing the SM72295MAE/NOPB datasheet, SM72295MAE/NOPB pinout, SM72295MAE/NOPB application, or SM72295MAE/NOPB equivalent, key selection criteria include bootstrap rail voltage capability (up to 115V), dual independent high/low-side logic inputs, PGOOD and OVP fault indicators, and SOIC-28 packaging compatible with isolated gate drive layouts.

Technical Context

The SM72295MAE/NOPB implements dual half-bridge drivers with level-shifted high-side outputs referenced to HSA/HSB nodes, supporting bootstrap operation up to 115V. Its integrated 100V-rated bootstrap diodes eliminate external diode requirements while enabling fast capacitor recharge at switching frequencies up to 200kHz.

Two independent transconductance amplifiers (SIA/SOA and SIB/SOB) provide differential current sensing with programmable gain via external resistors (e.g., 500Ω or 1kΩ), delivering buffered IIN/IOUT outputs with ±2mV offset and VDD clamping. An on-chip 3.3V/5V regulator (VDD) powers internal logic and serves as reference for OVS overvoltage detection.

Key Specifications

Parameter Value and Actual Design Meaning
Driver Type Dual half-bridge MOSFET driver for full-bridge N-MOSFET configurations
Peak Output Current 3A per channel - enables fast turn-on/turn-off of high-gate-charge MOSFETs
Bootstrap Voltage Range Up to 115V - supports high DC-link voltages in photovoltaic inverters
Current Sense Accuracy ±2mV input offset - ensures precise average current measurement for MPPT control
OVP Threshold VDD ±50mV - provides accurate overvoltage shutdown referenced to internal regulator
UVLO Threshold VCC rising threshold 6.9V ±0.5V - prevents operation during insufficient gate supply
Propagation Delay 22–26ns - guarantees tight timing control between high/low-side switching
Package SOIC-28 (DW) - surface-mount package with thermal pad-compatible footprint

Pinout & Package

SM72295MAE/NOPB uses a 28-pin SOIC (DW) package with exposed thermal pad (not electrically connected). Pin 1 is located at top-left corner when notch faces upward. Power ground (PGND) and analog ground (AGND) are separate pins to minimize noise coupling between power and sensing circuits.

Pin/Terminal Circuit Role Design Meaning
1, 2, 12–14, 21, 25 Sense amplifier inputs/outputs (SIA, SOA, IOUT, SIB, SOB, VCCA, VCCB) Differential current sensing interface with externally set gain; VCCA/VCCB supply gate drive rails
3, 4, 11 Current sense outputs (IIN, BIN, BOUT) Buffered low-impedance outputs for ADC interfacing or analog feedback loops
6–9, 22, 24 Logic inputs (LIA, LIB, HIA, HIB, LOA, LOB) TTL-compatible inputs with 100–400kΩ pull-down - require explicit grounding if unused
17, 18, 20, 26–28 Power rails & bootstrap nodes (VDD, HSA, HBA, HBB, HSB) VDD regulates internal logic; HBA/HBB supply high-side drivers; HSA/HSB connect to MOSFET sources
10, 15, 23 Fault/status outputs (PGOOD, OVP, PGND) Open-drain indicators with internal VDD pull-ups - signal UVLO, overvoltage, and power ground return

Key Features

Feature Design Value
Integrated 100V bootstrap diodes Eliminates external diodes and reduces board area in high-voltage bridge designs
Externally programmable current sense gain Supports multiple shunt resistor values (e.g., 500Ω or 1kΩ) to scale output voltage for ADC input range
Independent high/low-side logic inputs Enables asymmetric PWM control and dead-time insertion without external logic
VDD-regulated 3.3V/5V supply Provides stable reference for OVS comparator and internal circuitry - bypassed with 0.1μF capacitor
Programmable overvoltage protection OVS pin accepts resistor divider to set shutdown threshold - hysteresis prevents chatter near trip point
Power good indicator (PGOOD) Open-drain output confirms VCC regulation status - used for system enable sequencing

Applications

Photovoltaic Microinverter Grid-Tied Solar Inverter

Use Scenario: Converts DC from single solar panel to grid-synchronized AC using full-bridge topology with transformerless design.

IC Role / Device Role / Timing Role: Drives four N-MOSFETs in complementary pairs with precise timing; monitors input/output current for MPPT and protection.

Use Value: Integrated bootstrap diodes and 115V rail support >600V DC-link operation; dual current sense enables bidirectional power flow monitoring.

Use Scenario: Controls H-bridge stage in string inverters handling 800–1000V DC input from multiple PV modules.

IC Role / Device Role / Timing Role: Provides isolated gate drive signals with UVLO and OVP fault signaling to MCU; senses DC-link current for overcurrent shutdown.

Use Value: 3A peak drive current ensures fast MOSFET switching at 16–20kHz; PGOOD output synchronizes startup with auxiliary power rails.

Battery Energy Storage System (BESS) Uninterruptible Power Supply (UPS)

Use Scenario: Manages bi-directional power flow between battery stack (400–800V) and AC grid in residential BESS units.

IC Role / Device Role / Timing Role: Controls full-bridge inverter/rectifier stage; feeds real-time current data to digital controller for charge/discharge regulation.

Use Value: Externally programmable gain accommodates varying shunt resistor values across battery chemistries; buffered outputs reduce ADC loading.

Use Scenario: Drives output H-bridge in online double-conversion UPS to maintain clean sine-wave output during mains failure.

IC Role / Device Role / Timing Role: Delivers robust gate drive under transient load conditions; reports PGOOD status to system supervisor for fail-safe switchover.

Use Value: 125°C junction rating supports operation in enclosed UPS enclosures; SOIC-28 package allows standard reflow assembly.

Equivalent & Alternatives

The following parts are listed as comparable options for similar full-bridge gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
UCC27211D Single high/low-side driver (not dual); no integrated current sense or OVP; 4A peak drive Lacks current sensing and protection features - requires external amplifiers and comparators Choose when only basic gate drive is needed and sensing/protection are handled elsewhere
IRS2005SPBF Half-bridge driver only; no bootstrap diodes; requires external bootstrap diodes and UVLO circuitry Needs additional components to implement full-bridge with protection - increases BOM and layout complexity Choose for cost-sensitive designs where external component count is acceptable

Compared with UCC27211D and IRS2005SPBF, SM72295MAE/NOPB integrates current sensing, OVP, PGOOD, and bootstrap diodes in one SOIC-28 package - reducing component count, PCB area, and design validation effort for photovoltaic and energy storage inverters.

Availability

SM72295MAE/NOPB is available at Aetrix Electronics and suitable for photovoltaic microinverters, grid-tied solar inverters, battery energy storage systems, and uninterruptible power supplies requiring stable component supply and long-term industrial availability.

Supply support for SM72295MAE/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies.

The SM72295MAE/NOPB belongs to TI's renewable-energy-grade gate driver product line, engineered specifically for high-reliability, high-voltage DC-to-AC conversion in solar and storage applications.

FAQ

What is the primary function of the SM72295MAE/NOPB in a photovoltaic inverter?

The SM72295MAE/NOPB functions as a dual half-bridge gate driver that controls four external N-channel MOSFETs in a full-bridge configuration. It provides 3A peak gate current, integrated 100V bootstrap diodes, and two transconductance current sense amplifiers - enabling efficient, protected switching and real-time current monitoring essential for MPPT and safety compliance in solar microinverters. The SM72295MAE/NOPB directly interfaces with controller PWM signals and feeds sensed current data back to the system MCU.

Does the SM72295MAE/NOPB support bootstrap operation above 100V DC-link voltage?

Yes, the SM72295MAE/NOPB supports bootstrap supply voltages up to 115V, as confirmed by its absolute maximum rating for HBA/HBB pins and recommended operating condition of HS+7V to HS+14V. This enables reliable operation with DC-link voltages exceeding 100V - common in modern photovoltaic inverters. The integrated 100V bootstrap diodes are rated for continuous conduction at these levels, eliminating need for external high-voltage diodes. The SM72295MAE/NOPB datasheet specifies this capability explicitly in both Absolute Maximum Ratings and Recommended Operating Conditions tables.

How does the SM72295MAE/NOPB implement overvoltage protection?

The SM72295MAE/NOPB implements overvoltage protection via the OVS pin, which accepts a resistor divider from the monitored voltage node. When OVS exceeds VDD by more than 50mV (with 5% hysteresis), the open-drain OVP output pulls low to signal fault condition. VDD - regulated internally at 3.3V or 5V - serves as the stable reference, ensuring consistent trip thresholds independent of external supply variation. This architecture allows precise, adjustable shutdown without external comparators. The SM72295MAE/NOPB integrates all necessary circuitry, including internal pull-up and hysteresis, within the IC.

Can the SM72295MAE/NOPB current sense amplifiers be used for both input and output current monitoring simultaneously?

Yes, the SM72295MAE/NOPB contains two independent transconductance amplifiers: one pair (SIA/SOA) for input current sensing and another (SIB/SOB) for output current sensing. Each has dedicated buffered outputs (IIN/BIN and IOUT/BOUT), programmable gain via external resistors, and ±2mV offset - enabling simultaneous, isolated monitoring of DC input and AC output currents in bidirectional converters. This dual-sensing capability is explicitly documented in the device description, pin table, and Electrical Characteristics section of the SM72295MAE/NOPB datasheet.

What is the thermal performance of the SM72295MAE/NOPB in SOIC-28 package?

The SM72295MAE/NOPB has a junction-to-ambient thermal resistance (θJA) of 60°C/W when mounted on a 2-layer JEDEC-standard board with 2 oz copper. Its maximum junction temperature is rated at 150°C, with recommended operating range from –40°C to +125°C. Power dissipation is dominated by gate drive losses (PDGATES ≈ 2·f·CL·VDD²) and bootstrap diode losses - both frequency- and load-dependent. Layout guidelines emphasize low-inductance paths and local decoupling to manage thermal rise. The SM72295MAE/NOPB thermal characteristics are validated per JEDEC JESD51 and published in the official datasheet.

SM72295MAE/NOPB Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
SolarMagic™
Package/Case:
28-SOIC (0.295", 7.50mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Applications:
Photovoltaics
Current - Supply:
25µA
Voltage - Supply:
3V ~ 7V, 8V ~ 14V
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOIC

SM72295MAE/NOPB FAQ

1.How can I place an order for SM72295MAE/NOPB through Aetrix?

Please submit a Request for Quotation (RFQ) for SM72295MAE/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM72295MAE/NOPB reliable?

The price and inventory of SM72295MAE/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM72295MAE/NOPB is usually 5 days.

3.What payment methods are accepted for SM72295MAE/NOPB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM72295MAE/NOPB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM72295MAE/NOPB?

SM72295MAE/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM72295MAE/NOPB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM72295MAE/NOPB?

For technical support, including SM72295MAE/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM72295MAE/NOPB requirements.

6.How does Aetrix verify that SM72295MAE/NOPB is sourced from the original manufacturer or authorized distributors?

All SM72295MAE/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM72295MAE/NOPB meets industry standards.

7.What is the process for return or replacement of SM72295MAE/NOPB?

All SM72295MAE/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with SM72295MAE/NOPB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM72295MAE/NOPB part is unused and in its original packaging.

Return procedure for SM72295MAE/NOPB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM72295MAE/NOPB Tags

  • SM72295MAE/NOPB
  • SM72295MAE/NOPB PDF
  • SM72295MAE/NOPB Datasheet
  • SM72295MAE/NOPB Specifications
  • SM72295MAE/NOPB Images
  • Texas Instruments
  • Texas Instruments SM72295MAE/NOPB
  • Buy SM72295MAE/NOPB
  • SM72295MAE/NOPB Price
  • SM72295MAE/NOPB Distributor
  • SM72295MAE/NOPB Supplier
  • SM72295MAE/NOPB Wholesale
Related Products
TPS2511DGNR
TPS2511DGNR

Texas Instruments

UTC2000/MG
UTC2000/MG

Microchip Technology

TUSB320HAIRWBR
TUSB320HAIRWBR

Texas Instruments

TPS61252DSGR
TPS61252DSGR

Texas Instruments

PI5USB30216CXUAEX
PI5USB30216CXUAEX

Diodes Incorporated

SN6501DBVR
SN6501DBVR

Texas Instruments

CYPD3177-24LQXQT
CYPD3177-24LQXQT

Infineon Technologies

SN6501QDBVRQ1
SN6501QDBVRQ1

Texas Instruments

STUSB1600AQTR
STUSB1600AQTR

STMicroelectronics

SN6505BDBVR
SN6505BDBVR

Texas Instruments

SN6501DBVT
SN6501DBVT

Texas Instruments

TPS65150PWPR
TPS65150PWPR

Texas Instruments

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER