Texas Instruments SM72482MA-4/NOPB

Overview

SM72482MA-4/NOPB from Texas Instruments is a dual-channel, inverting/non-inverting compound gate driver IC for high-efficiency MOSFET gate control in power conversion systems. It delivers 5A sink / 3A source peak current per channel, features independent TTL-compatible inputs, 25 ns typical propagation delay, and integrated under-voltage lockout (UVLO) with 2.9 V rising threshold - optimized for synchronous rectifier and switch-mode power supply gate drive applications.

For engineers reviewing the SM72482MA-4/NOPB datasheet, SM72482MA-4/NOPB pinout, SM72482MA-4/NOPB application, or SM72482MA-4/NOPB equivalent, key selection considerations include its compound CMOS/bipolar output architecture, SOIC-8 package with pin-compatible layout to TC4426/UCC2732x, UVLO behavior (OUT_A high / OUT_B low during undervoltage), and thermal performance in high-frequency switching environments.

Technical Context

The SM72482MA-4/NOPB implements two independent totem-pole output stages, each combining parallel MOS and bipolar transistors to reduce output current variation across voltage and temperature while maintaining rail-to-rail swing (VCC to VEE). Its input stage uses high-impedance CMOS buffers with TTL-compatible thresholds (VIH = 2.2 V, VIL = 0.8 V) and 400 mV hysteresis.

This variant configures OUT_A as inverting (active-high input drives OUT_A low) and OUT_B as non-inverting (active-high input drives OUT_B high), enabling complementary PFET/NFET drive during normal operation and safe UVLO state (OUT_A = high, OUT_B = low). Propagation delays are tightly matched (< ±5 ns) between channels to support parallel operation without shoot-through risk when properly synchronized.

Key Specifications

Pinout & Package

SM72482MA-4/NOPB is housed in an 8-pin SOIC (D) package (5.3 mm × 6.2 mm, 1.75 mm max height), RoHS-compliant, with SN lead finish and MSL Level-1 rating. Pin 1 is marked by a beveled corner or dot; pins 1 and 8 are NC (no connect); VEE serves as common ground reference for inputs and outputs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual gate driver applications.

Compared with UCC27324DR and TC4427ACOA, SM72482MA-4/NOPB provides 4.2× higher peak sink current, integrated UVLO with defined fail-safe output states, and compound output architecture that maintains consistent drive capability across voltage and temperature - critical for high-reliability renewable energy and industrial power systems.

Availability

SM72482MA-4/NOPB is available at Aetrix Electronics and suitable for synchronous rectifier gate drivers, switch-mode power supply gate drivers, and solenoid/motor interface circuits requiring stable component supply, long-term lifecycle assurance, and compliance with industrial temperature grading (−40°C to +125°C).

Supply support for SM72482MA-4/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power IC design.

The SM72482 product line was developed specifically for high-efficiency, high-frequency power conversion systems - targeting synchronous rectification, isolated DC/DC, and renewable energy inverters where gate drive stability, UVLO safety, and thermal robustness are critical.

FAQ

What is the UVLO behavior of SM72482MA-4/NOPB during undervoltage conditions?

The SM72482MA-4/NOPB asserts OUT_A high and OUT_B low when VCC−VEE falls below 2.67 V (falling threshold), holding those states until VCC−VEE exceeds 2.9 V (rising threshold). This configuration ensures safe PFET/NFET gate biasing during brown-out, preventing shoot-through in half-bridge configurations. The 230 mV hysteresis eliminates chattering during marginal supply conditions. SM72482MA-4/NOPB implements this behavior via internal comparator circuitry tied to the VCC–VEE differential.

Can SM72482MA-4/NOPB drive both high-side and low-side N-channel MOSFETs in a half-bridge?

SM72482MA-4/NOPB is designed as a dual low-side gate driver and cannot directly drive high-side N-channel MOSFETs without external level-shifting circuitry or bootstrap components. Its outputs swing from VCC to VEE only. To drive a high-side N-MOSFET, a dedicated high-side driver (e.g., UCC27201) or isolated gate driver is required. SM72482MA-4/NOPB is commonly paired with such drivers in bridge configurations, where it handles low-side switching with precise timing and high current capability.

How does the compound CMOS/bipolar output stage improve performance over standard gate drivers?

The compound output stage in SM72482MA-4/NOPB combines MOS and bipolar transistors in parallel: the MOS device delivers rail-to-rail voltage swing and low R_DS(on), while the bipolar device provides high peak current near the MOSFET threshold region (where V_GS ≈ 2–4 V), where MOS devices exhibit poor transconductance. This hybrid structure reduces total output current variation to <±15% across −40°C to +125°C and 3.5–14 V VCC - a key advantage over single-technology drivers like TC4427ACOA or UCC27324DR.

Is SM72482MA-4/NOPB pin-compatible with industry-standard gate drivers?

Yes, SM72482MA-4/NOPB uses an SOIC-8 (D) package with identical pinout to TC4426/27/28 and UCC27323/4/5 families. Pin assignments - including IN_A (2), VEE (3), IN_B (4), OUT_B (5), VCC (6), OUT_A (7) - match these legacy drivers, enabling direct PCB replacement. However, functional differences exist: SM72482MA-4/NOPB offers higher current, UVLO, and compound output architecture, so system validation is required despite mechanical compatibility.

What thermal derating applies to SM72482MA-4/NOPB in continuous operation?

While SM72482MA-4/NOPB delivers 5A sink/3A source in pulsed mode, continuous current is limited by package power dissipation. For SOIC-8 at T_A = 60°C and θ_JA = 170°C/W, maximum continuous sink current is ~391 mA (based on R_DS(on) = 2.5 Ω) and source current ~347 mA (based on V_DIODE ≈ 1.1 V). These values assume worst-case junction temperature of 125°C. For sustained >100 mA loads, heatsinking or airflow is recommended to maintain reliability.