My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SM8S10ATHE3/I
- Part No.:
- SM8S10ATHE3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AC
- Datasheet:
-
SM8S10ATHE3/I.pdf
- Description:
- TVS DIODE 10VWM 17VC DO218AC
- Quantity:
- Payment:
- Shipping:
Inventory:2,123
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM8S10ATHE3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection in high-reliability power line applications. It features a 11.1 V to 12.3 V breakdown voltage (VBR), 6600 W peak pulse power (10/1000 μs), 175 °C maximum junction temperature, DO-218AC package, and AEC-Q101 qualification.
For engineers reviewing the SM8S10ATHE3/I datasheet, SM8S10ATHE3/I pinout, SM8S10ATHE3/I application, or SM8S10ATHE3/I equivalent, this device serves as a high-surge-capability, low-leakage TVS for 12 V automotive systems requiring ISO7637-2 compliance and robust thermal stability under sustained case temperatures up to 150 °C.
Technical Context
The SM8S10ATHE3/I employs passivated anisotropic rectifier technology optimized for junction stability at TJ = 175 °C, with unidirectional polarity and heatsink-connected anode configuration. Its 0.90 °C/W junction-to-case thermal resistance enables effective heat dissipation on metal-core PCBs or heatsinks.
It delivers 388 A peak pulse current (IPPM) at 10/1000 μs, clamps to ≤17.0 V at that current, and maintains ≤15 μA reverse leakage at 10 V stand-off voltage (VWM) - critical for minimizing quiescent power loss in always-on vehicle modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 11.1 / 11.7 / 12.3 V - defines precise overvoltage triggering threshold for 12 V nominal systems |
| VWM | 10.0 V - maximum continuous reverse operating voltage before significant leakage begins |
| IPPM (10/1000 μs) | 388 A - surge current handling capacity matching ISO7637-2 Load Dump Pulse 5a requirements |
| VC @ IPPM | ≤17.0 V - clamping voltage limiting downstream IC stress during transients |
| PPPM (10/1000 μs) | 6600 W - peak power absorption capability without failure under standardized surge waveform |
| TJ max | +175 °C - enables operation in engine bay or powertrain control units without derating |
| Leakage @ VWM, 25 °C | ≤15 μA - ensures minimal standby current draw in battery-sensitive modules |
Pinout & Package
Package: DO-218AC - thermally enhanced surface-mount outline with metal heatsink terminal (anode), matte tin-plated leads, UL 94 V-0 molding compound, MSL Level 1 rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Cathode | Connected to protected circuit node; carries transient current into device during clamping |
| Lead 2 / Metal Heatsink | Anode | Primary thermal path and electrical return; must be soldered to large copper area or external heatsink |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated reliability for automotive power electronics per stress test standard, including temperature cycling and HTRB |
| Junction passivation optimized design | Stable VBR drift <0.069 %/°C enables predictable clamping across full -55 °C to +175 °C range |
| Meets ISO7637-2 surge specification | Rated for Load Dump Pulse 5a (10 ms exponential) up to 5200 W (10/10,000 μs), not just generic surge immunity |
| Low forward voltage drop | VF ≤1.8 V @ 100 A (8.3 ms half-sine) minimizes conduction loss during high-current fault events |
| MSL Level 1, 245 °C peak reflow | Compatible with standard lead-free SMT assembly without moisture sensitivity concerns or baking requirement |
Applications
| Engine Control Unit (ECU) Power Input Protection | Body Control Module (BCM) Battery Line Protection |
|---|---|
Use Scenario: Protects microcontroller, CAN transceivers, and sensors from 12 V battery line transients during alternator load dump and inductive switching. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and input filter capacitor, clamping surges before LDOs or DC/DC converters. Use Value: Limits clamped voltage to ≤17.0 V while absorbing 6600 W pulses, preventing latch-up or permanent damage to 20 V-rated power management ICs. |
Use Scenario: Shields BCM power supply during door lock actuator switching, seat motor operation, and lighting load transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp on main 12 V input, coordinated with upstream fuse and downstream LC filtering. Use Value: Maintains ≤15 μA leakage at 10 V VWM, avoiding excessive battery drain in sleep mode while surviving repeated 388 A surges. |
| Advanced Driver Assistance Systems (ADAS) Camera Power Rail | Electric Power Steering (EPS) Motor Driver Supply Protection |
Use Scenario: Safeguards image sensor and ISP power rails against coupled transients from nearby high-power actuators or EMI sources. IC Role / Device Role / Timing Role: Fast-response TVS located immediately after bulk input capacitor, minimizing trace inductance in clamping path. Use Value: Achieves 175 °C junction rating and 0.90 °C/W RθJC, enabling stable operation near hot camera housings without thermal shutdown. |
Use Scenario: Protects gate drivers and MCU power supplies from back-EMF spikes generated by EPS motor commutation and regenerative braking. IC Role / Device Role / Timing Role: High-energy TVS mounted directly to metal chassis heatsink, with anode terminal serving dual thermal/electrical function. Use Value: Withstands 700 A non-repetitive forward surge (IFSM) and 5200 W (10/10,000 μs), covering worst-case motor stall and brake energy dump events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S10AHM3 | Same VBR, VWM, PPPM; uses HM3 tape-and-reel packaging (750 pcs/reel, 16 mm tape) vs. HE3's 13″ reel and I carrier code | Identical electrical performance and AEC-Q101 qualification; intended as direct replacement for new designs where HE3 is Not For New Designs | Select SM8S10AHM3 for new automotive designs requiring same TVS performance with updated packaging and lifecycle support. |
| SMAJ10A | Lower PPPM (400 W), smaller SMA package (RθJC ≈ 50 °C/W), no AEC-Q101 qualification, VBR = 11.1–12.3 V same | Limited to non-automotive, low-energy applications; unsuitable for load dump or high-temperature under-hood use | Use SMAJ10A only in cost-sensitive consumer or industrial applications where 6600 W surge capacity and 175 °C operation are unnecessary. |
Compared with SM8S10ATHE3/I, SM8S10AHM3 offers identical protection performance with updated packaging and active lifecycle status, while SMAJ10A provides basic clamping at one-sixteenth the power rating and lacks automotive qualification - making SM8S10AHM3 the recommended upgrade path for new designs.
Availability
SM8S10ATHE3/I is available at Aetrix Electronics and suitable for automotive ECU power protection, body control module (BCM) battery line hardening, and ADAS camera power rail stabilization requiring stable component supply across extended production lifecycles.
Supply support for SM8S10ATHE3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, rectifiers, and protection devices for automotive, industrial, and computing markets.
The SM8SxxAT family was engineered specifically for automotive load dump and inductive switching surge suppression, emphasizing high-temperature stability, AEC-Q101 compliance, and industry-leading 6600 W pulse power in the DO-218AC package.
FAQ
What is the primary function of the SM8S10ATHE3/I in automotive circuits?
The SM8S10ATHE3/I functions as a unidirectional transient voltage suppressor that clamps high-energy load dump and inductive switching surges on 12 V automotive power rails. It protects downstream components such as MCUs, CAN transceivers, and power regulators by limiting transient voltages to ≤17.0 V while safely dissipating up to 6600 W of pulse energy - a core requirement defined in ISO7637-2 Pulse 5a testing. Its design ensures reliable operation even at junction temperatures up to +175 °C.
Is the SM8S10ATHE3/I suitable for new automotive designs?
No - the SM8S10ATHE3/I is explicitly marked "Not For New Designs" in Vishay's official documentation (Doc #87734, Rev. 21-Mar-2024), with SM8S10AHM3 designated as the recommended alternative. While SM8S10ATHE3/I remains available for legacy production and repair, new designs should use SM8S10AHM3, which shares identical electrical specifications, AEC-Q101 qualification, and DO-218AC package but features updated packaging and active lifecycle support.
How does the DO-218AC package of the SM8S10ATHE3/I improve thermal performance compared to standard SMC packages?
The DO-218AC package of the SM8S10ATHE3/I integrates a large metal heatsink terminal (anode) that serves as both electrical connection and primary thermal path, achieving a typical junction-to-case thermal resistance (RθJC) of 0.90 °C/W - over five times better than standard SMC packages (~5.0 °C/W). This allows the SM8S10ATHE3/I to sustain higher average power dissipation and survive repeated high-energy surges without thermal runaway, especially when mounted on copper areas ≥100 mm² or bolted to chassis metal.
What is the significance of the HE3 suffix in SM8S10ATHE3/I?
Within Vishay's ordering nomenclature, the HE3 suffix in SM8S10ATHE3/I indicates RoHS-compliant construction, AEC-Q101 qualification, and compliance with JESD201 Class 2 whisker resistance testing. The "I" carrier code specifies packaging in 13″ diameter plastic tape and reel, with 750 units per reel and anode orientation toward the sprocket hole - ensuring consistent automated placement and thermal mounting alignment during SMT assembly.
Does the SM8S10ATHE3/I meet ISO7637-2 requirements out-of-the-box?
Yes - the SM8S10ATHE3/I is explicitly stated in its datasheet to meet ISO7637-2 surge specifications, validated for Load Dump Pulse 5a (10 ms exponential waveform) with up to 5200 W capability (10/10,000 μs) and 6600 W (10/1000 μs). Its 388 A peak pulse current rating, 17.0 V clamping voltage, and thermal design enable compliance without additional external components, provided layout follows Vishay's recommended heatsinking and trace inductance guidelines.
SM8S10ATHE3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.1V
- Voltage - Clamping (Max) @ Ipp:
- 17V
- Current - Peak Pulse (10/1000µs):
- 388A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AC
SM8S10ATHE3/I FAQ
1.How can I place an order for SM8S10ATHE3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S10ATHE3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S10ATHE3/I reliable?
The price and inventory of SM8S10ATHE3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S10ATHE3/I is usually 5 days.
3.What payment methods are accepted for SM8S10ATHE3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S10ATHE3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S10ATHE3/I?
SM8S10ATHE3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S10ATHE3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S10ATHE3/I?
For technical support, including SM8S10ATHE3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S10ATHE3/I requirements.
6.How does Aetrix verify that SM8S10ATHE3/I is sourced from the original manufacturer or authorized distributors?
All SM8S10ATHE3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S10ATHE3/I meets industry standards.
7.What is the process for return or replacement of SM8S10ATHE3/I?
All SM8S10ATHE3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S10ATHE3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S10ATHE3/I part is unused and in its original packaging.
Return procedure for SM8S10ATHE3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S10ATHE3/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
