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Vishay General Semiconductor - Diodes Division SM8S11AHE3_A/I
- Part No.:
- SM8S11AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S11AHE3_A/I.pdf
- Description:
- TVS DIODE 11VWM 18.2VC DO218AB
- Quantity:
- Payment:
- Shipping:
Inventory:297
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Product details
Overview
SM8S11AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in DO-218AB package, rated for 11.0 V stand-off voltage (VWM), 12.2–13.5 V breakdown (VBR), and 6600 W peak pulse power (10/1000 μs). It delivers AEC-Q101 qualification, 175 °C junction capability, and low leakage (<10 μA at VWM), targeting automotive load dump protection.
For engineers reviewing the SM8S11AHE3_A/I datasheet, SM8S11AHE3_A/I pinout, SM8S11AHE3_A/I application, or SM8S11AHE3_A/I equivalent, this page provides verified electrical parameters, thermal resistance (RθJM = 0.35 °C/W), clamping behavior (VC = 18.2 V at IPPM), polarity configuration (anode heatsink), and direct alternatives for legacy design continuity.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to achieve stable breakdown voltage with ±5% tolerance and positive temperature coefficient (αT = 0.072 %/°C). Its DO-218AB package integrates a metal heatsink as the anode terminal, enabling high surge current handling (IPPM = 363 A) and low thermal resistance to mount (RθJM = 0.35 °C/W).
Designed specifically for ISO 7637-2-compliant automotive load dump suppression, it operates across -55 °C to +175 °C and meets MSL Level 1 (245 °C reflow). The device exhibits low forward voltage drop (VF ≤ 1.8 V at 100 A) and <15 μA reverse leakage at TJ = 175 °C, supporting high-reliability under sustained thermal stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11.0 V - Maximum continuous reverse operating voltage before conduction begins; sets system-level overvoltage trip threshold. |
| VBR (min/typ/max) | 12.2 / 12.9 / 13.5 V at IT = 5 mA - Confirmed breakdown range ensures predictable clamping onset across production lot and temperature. |
| VC @ IPPM | 18.2 V at 363 A (10/1000 μs) - Clamping voltage defines worst-case downstream voltage seen during surge, critical for IC survivability. |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power rating determines maximum energy absorption without failure during standardized transients. |
| TJ max | +175 °C - Enables operation in under-hood automotive environments and supports long-term reliability under thermal cycling. |
| RθJM | 0.35 °C/W - Low junction-to-mount thermal resistance allows efficient heat transfer to PCB copper or external heatsink. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including HTOL, TCT, and ESD testing per AEC specification. |
Pinout & Package
Package: DO-218AB - Surface-mount, anode-heatsink configuration with matte tin-plated leads, UL 94 V-0 molding compound, and JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Metal Heatsink) | Current entry point during clamping | Must be connected to protected line (e.g., battery rail); serves as primary thermal path to PCB copper pour or heatsink. |
| Cathode (Lead 1) | Current exit point during clamping | Connected to ground or low-impedance return path; layout must minimize inductance to preserve clamping speed. |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation optimized design | Enables stable VBR over lifetime and temperature, reducing drift to ≤0.072 %/°C and supporting 175 °C operation. |
| Unidirectional polarity only | Optimized for DC-biased systems like 12 V/24 V automotive rails where reverse conduction is not required. |
| Low leakage current | <10 μA at VWM (25 °C) and <15 μA at TJ = 175 °C - Minimizes standby power loss and avoids false triggering in high-impedance circuits. |
| High surge capability | IPPM = 363 A (10/1000 μs), IFSM = 700 A (8.3 ms half-sine) - Withstands repeated load dump events per ISO 7637-2 Pulse 5a/b. |
| MSL Level 1 compliance | Rated for peak reflow of 245 °C - Supports standard lead-free SMT assembly without preconditioning or dry-pack requirements. |
Applications
| Automotive Load Dump Protection | Engine Control Unit (ECU) Power Input |
|---|---|
Use Scenario: Suppresses 12 V system voltage spikes up to 40 V caused by alternator load dump during battery disconnection. IC Role / Device Role / Timing Role: Primary clamping device placed at main power input of vehicle ECUs, acting within nanoseconds to limit transient overvoltage. Use Value: Prevents latch-up or permanent damage to MCU, CAN transceivers, and analog front-ends by clamping to ≤18.2 V at 363 A. |
Use Scenario: Protects 5 V/3.3 V regulator inputs and microcontroller supply pins from coupled transients on 12 V rail. IC Role / Device Role / Timing Role: Secondary TVS stage downstream of main fuse and upstream of LDO/DC-DC converter, providing localized surge immunity. Use Value: Maintains regulated output stability during fast transients due to low clamping voltage and minimal parasitic inductance in DO-218AB layout. |
| Body Control Module (BCM) Power Rail | ADAS Camera Power Interface |
Use Scenario: Shields BCM power inputs from switching noise and relay-induced spikes in door lock, lighting, and HVAC subsystems. IC Role / Device Role / Timing Role: Standalone TVS on fused 12 V feed to BCM, sized to absorb repetitive low-energy transients without degradation. Use Value: Ensures functional safety compliance (ISO 26262 ASIL-B) via AEC-Q101 qualification and 175 °C operational margin. |
Use Scenario: Guards 12 V input to image sensor modules exposed to vibration-induced harness noise and ESD coupling. IC Role / Device Role / Timing Role: First-line transient suppressor mounted directly at connector entry point, minimizing trace length to ground. Use Value: Preserves image integrity and prevents reset events by limiting voltage overshoot to <18.2 V during 10/1000 μs surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S11AHM3_A/I | Same VWM/VBR/PPPM specs; HM3 suffix indicates halogen-free, RoHS-compliant, and AEC-Q101 qualified variant with identical DO-218AB package. | No functional difference; intended as direct replacement for HE3-series in new designs requiring updated material compliance. | Select SM8S11AHM3_A/I for new designs requiring halogen-free compliance while retaining identical electrical and thermal performance. |
| SMAJ11A | Lower PPPM (400 W), smaller SMA package (RθJA = 65 °C/W), VBR = 12.2–13.5 V, but not AEC-Q101 qualified and limited to TJ = 150 °C. | Suitable for non-automotive industrial or consumer applications with lower surge energy requirements and relaxed reliability standards. | Choose SMAJ11A only for cost-sensitive, non-automotive applications where 6600 W surge capacity and 175 °C operation are unnecessary. |
Compared with SM8S11AHE3_A/I, SM8S11AHM3_A/I offers identical protection performance with updated environmental compliance, whereas SMAJ11A trades significant surge robustness and automotive qualification for footprint and cost reduction - making it unsuitable for load dump duty cycles.
Availability
SM8S11AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronics, engine control units, and body control modules requiring stable component supply across extended temperature and high-surge environments.
Supply support for SM8S11AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM8SxxA family is engineered for high-energy transient suppression in harsh automotive environments, with focus on ISO 7637-2 load dump compliance, AEC-Q101 qualification, and 175 °C junction operation.
FAQ
What is the clamping voltage of SM8S11AHE3_A/I at its rated peak pulse current?
The SM8S11AHE3_A/I has a maximum clamping voltage (VC) of 18.2 V when subjected to its peak pulse current (IPPM) of 363 A under the standard 10/1000 μs waveform. This value is measured at TA = 25 °C and defines the upper voltage limit imposed on protected circuitry during surge events. The SM8S11AHE3_A/I maintains this clamping performance across its full operating temperature range due to its positive VBR temperature coefficient.
Is SM8S11AHE3_A/I suitable for new automotive designs?
No - SM8S11AHE3_A/I is marked "Not For New Designs" in Vishay's official documentation, with SM8S11AHM3_A/I designated as the recommended alternative. While SM8S11AHE3_A/I remains fully functional and AEC-Q101 qualified, new designs should use the HM3 variant to ensure long-term material compliance (halogen-free, RoHS) and continued supply chain support. The SM8S11AHE3_A/I is appropriate only for legacy design refresh or repair scenarios.
What does the "HE3" suffix indicate in SM8S11AHE3_A/I?
The "HE3" suffix in SM8S11AHE3_A/I denotes RoHS-compliant, lead-free termination with matte tin plating, JESD 201 Class 2 whisker resistance, and AEC-Q101 qualification. The "H" confirms automotive grade, "E3" specifies non-halogen-free, Pb-free construction, and "A/I" indicates packaging in 13″ tape-and-reel with anode orientation toward sprocket holes. This suffix differentiates it from industry-grade or non-AEC variants.
How is thermal management implemented for SM8S11AHE3_A/I in PCB layout?
Thermal management for SM8S11AHE3_A/I relies on its DO-218AB package, where the metal heatsink serves as the anode terminal and primary thermal path. Effective layout requires connecting this heatsink to a large copper pour (≥250 mm²) or external heatsink using multiple thermal vias. The device's RθJM of 0.35 °C/W enables efficient heat transfer to the mounting surface, while RθJA of 55 °C/W assumes standard JEDEC 51-2A FR4 conditions - underscoring the need for robust copper area to sustain 8 W continuous dissipation.
Does SM8S11AHE3_A/I meet ISO 7637-2 requirements?
Yes - SM8S11AHE3_A/I is explicitly stated to meet ISO 7637-2 surge specifications, particularly for Pulse 5a (load dump) testing, across its rated operating conditions. Its 6600 W peak pulse power (10/1000 μs), 363 A IPPM, and 18.2 V clamping voltage enable compliance with the 12 V system test profile (up to 40 V, 100 ms duration). Performance validation is confirmed under TJ = 175 °C and includes thermal derating per Fig. 3 in the datasheet.
SM8S11AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 363A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S11AHE3_A/I FAQ
1.How can I place an order for SM8S11AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S11AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S11AHE3_A/I reliable?
The price and inventory of SM8S11AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S11AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S11AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S11AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S11AHE3_A/I?
SM8S11AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S11AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S11AHE3_A/I?
For technical support, including SM8S11AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S11AHE3_A/I requirements.
6.How does Aetrix verify that SM8S11AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S11AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S11AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S11AHE3_A/I?
All SM8S11AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S11AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S11AHE3_A/I part is unused and in its original packaging.
Return procedure for SM8S11AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S11AHE3_A/I Tags
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