Vishay General Semiconductor - Diodes Division SM8S11AHM3/I
- Part No.:
- SM8S11AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AC
- Datasheet:
-
SM8S11AHM3/I.pdf
- Description:
- TVS DIODE 11VWM 18.2VC DO218AC
- Quantity:
- Payment:

- Shipping:

Inventory:7,313
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Product details
Overview
SM8S11AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 11.1 V (min) to 13.5 V (max) breakdown voltage, 175 °C junction temperature, and 6600 W peak pulse power (10/1000 μs). It delivers automotive-grade load dump protection in engine control units and battery management systems.
For engineers reviewing the SM8S11AHM3/I datasheet, SM8S11AHM3/I pinout, SM8S11AHM3/I application, or SM8S11AHM3/I equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C thermal capability, unidirectional polarity, low leakage (<10 μA at VWM), and ISO7637-2 compliance for automotive transients.
Technical Context
This device uses passivated anisotropic rectifier technology optimized for high-reliability automotive environments. Its junction-to-mount thermal resistance is 0.35 °C/W, enabling effective heat transfer to the metal heatsink (anode side), and it supports 10/1000 μs surge waveforms up to 363 A peak pulse current.
The SM8S11AHM3/I operates with a typical VBR temperature coefficient of 0.072 %/°C and maintains stable clamping performance across -55 °C to +175 °C. Its DO-218AB package features matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min–max) | 12.2 V – 13.5 V at IT = 5 mA: defines precise overvoltage triggering threshold for reliable clamping onset |
| VWM | 11.0 V: maximum continuous reverse operating voltage before leakage exceeds 10 μA |
| PPPM (10/1000 μs) | 6600 W: enables robust suppression of high-energy automotive load dump transients |
| VC at IPPM | 18.2 V: clamping voltage under 363 A surge ensures downstream ICs remain below safe stress limits |
| TJ max. | +175 °C: supports under-hood placement in modern automotive electronics without derating |
| IFSM | 700 A (8.3 ms half-sine): withstands repetitive inrush and fault currents in power distribution networks |
| Polarity | Unidirectional: anode connected to heatsink, cathode to protected line - simplifies PCB layout for DC bus protection |
Pinout & Package
Package: DO-218AB - surface-mount, single-ended metal heatsink package with anode integrated into the base plate; meets UL 94 V-0, MSL Level 1 (245 °C peak reflow), and JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink Base) | Current return path and thermal interface | Must be soldered to large copper pour for thermal conduction; electrically connects to system ground or low-side reference |
| Cathode (Lead 1) | Protected line connection | Connected to the circuit node requiring transient suppression (e.g., 12 V battery rail); carries full surge current during clamping |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including HTGB, HTRB, and TCT, ensuring long-term reliability in harsh environments |
| Junction passivation | Optimized anisotropic rectifier structure reduces leakage drift and improves stability at 175 °C junction temperature |
| ISO7637-2 compliance | Meets Pulse 5a/b load dump test profiles when mounted per recommended footprint, eliminating need for external test validation |
| Low VF at high IF | ≤1.8 V forward drop at 100 A (300 μs pulse) minimizes conduction loss during sustained overvoltage events |
| MSL Level 1 rating | Enables standard SMT assembly without baking or special handling - compatible with high-volume automotive manufacturing |
Applications
| Engine Control Unit (ECU) Power Input | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: Protects ECU microcontroller and CAN transceivers from 12 V battery rail transients during alternator load dump. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery input and LDO/regulator input, clamping within 18.2 V to prevent damage to downstream 5 V/3.3 V logic. Use Value: Withstands 6600 W surges and operates reliably at 175 °C ambient, enabling direct integration near engine compartment power entry points. |
Use Scenario: Shields BCM power supply and LIN transceivers from switching noise generated by door lock actuators and lighting loads. IC Role / Device Role / Timing Role: Fast-response transient suppressor on 12 V main rail, activated within nanoseconds to limit voltage overshoot to <18.2 V. Use Value: Low 10 μA leakage at 11 V stand-off preserves sleep-mode current budget; AEC-Q101 qualification ensures field longevity. |
| Electric Power Steering (EPS) Motor Driver | On-Board Charger (OBC) DC Link Protection |
Use Scenario: Safeguards gate drivers and current sense amplifiers in EPS H-bridge from inductive kickback during motor commutation. IC Role / Device Role / Timing Role: Unidirectional clamp referenced to low-side ground, absorbing bidirectional energy via freewheeling paths while maintaining polarity integrity. Use Value: 700 A IFSM rating handles repeated motor stall surges; DO-218AB metal heatsink dissipates heat directly into chassis ground plane. |
Use Scenario: Suppresses voltage spikes on the high-current DC bus between AC/DC stage and DC/DC converter in 400 V OBC systems. IC Role / Device Role / Timing Role: Primary transient shunt on DC+ rail, triggered by fast-rising transients from IGBT switching or grid disturbances. Use Value: 6600 W PPPM capacity accommodates worst-case 10/1000 μs surges; 0.35 °C/W RθJM enables thermal coupling to aluminum heatsink without thermal interface material. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ11A | Lower PPPM (400 W), DO-214AC package, 175 °C rated but not AEC-Q101 qualified | Suitable for industrial or consumer-grade 12 V rails where automotive qualification is not required | Choose SMAJ11A only if cost sensitivity outweighs AEC-Q101 compliance and surge margin requirements |
| SM8S11AHE3_A/I | Same electrical specs and DO-218AB package; differs only in packaging suffix (HE3 vs HM3) and reel orientation (anode toward sprocket hole) | Identical functional behavior and thermal performance; HM3 denotes updated tape-and-reel configuration per Vishay's revision control | Select SM8S11AHM3/I for new designs requiring latest production release and documented traceability per Vishay's 06-Feb-2026 revision |
Compared with SMAJ11A, SM8S11AHM3/I delivers 16.5× higher surge power and automotive qualification; versus SM8S11AHE3_A/I, it offers identical protection performance with updated packaging logistics and revision-controlled documentation.
Availability
SM8S11AHM3/I is available at Aetrix Electronics and suitable for automotive power rail protection, engine control unit hardening, and battery management system surge suppression requiring stable component supply and long-term lifecycle support.
Supply support for SM8S11AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices engineered for high reliability and extreme environmental operation.
The SM8S series was developed specifically for automotive-grade transient voltage suppression, targeting load dump, inductive switching, and lightning-induced surge protection in under-hood and powertrain electronics.
FAQ
What is the clamping voltage of SM8S11AHM3/I at its rated peak pulse current?
The SM8S11AHM3/I has a maximum clamping voltage (VC) of 18.2 V when subjected to its peak pulse current (IPPM) of 363 A under a 10/1000 μs waveform. This value is measured at TA = 25 °C and ensures protected circuits remain within safe operating limits during transient events. The SM8S11AHM3/I maintains this clamping performance across its full operating temperature range.
Is SM8S11AHM3/I qualified for automotive applications?
Yes, SM8S11AHM3/I is AEC-Q101 qualified and explicitly designed for automotive use. It meets rigorous stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling (TCT). Its 175 °C maximum junction temperature and ISO7637-2 compliance further validate its suitability for engine control units, body control modules, and other automotive subsystems.
What does the "HM3" suffix indicate in SM8S11AHM3/I?
The "HM3" suffix in SM8S11AHM3/I identifies Vishay's updated tape-and-reel packaging configuration, superseding earlier HE3 variants. It specifies anode orientation toward the sprocket hole, adherence to latest MSL Level 1 reflow guidelines, and alignment with Vishay's 06-Feb-2026 revision control. The HM3 marking confirms full compatibility with automated SMT placement equipment used in automotive electronics manufacturing.
How does the DO-218AB package of SM8S11AHM3/I improve thermal performance?
The DO-218AB package of SM8S11AHM3/I integrates the anode directly into a metal heatsink base, achieving a junction-to-mount thermal resistance (RθJM) of just 0.35 °C/W. This allows efficient heat transfer to the PCB copper pour or chassis ground plane, sustaining 6600 W surge dissipation without external heatsinks. The SM8S11AHM3/I leverages this design to operate continuously at 175 °C junction temperature.
Can SM8S11AHM3/I replace SM8S11AHE3_A/I in existing designs?
Yes, SM8S11AHM3/I is a direct replacement for SM8S11AHE3_A/I with identical electrical specifications, thermal characteristics, and mechanical dimensions. The HM3 suffix reflects updated packaging logistics and revision-controlled documentation per Vishay's 06-Feb-2026 specification. No PCB or schematic changes are required when migrating to SM8S11AHM3/I.
SM8S11AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 363A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AC
SM8S11AHM3/I FAQ
1.How can I place an order for SM8S11AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S11AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S11AHM3/I reliable?
The price and inventory of SM8S11AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S11AHM3/I is usually 5 days.
3.What payment methods are accepted for SM8S11AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S11AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S11AHM3/I?
SM8S11AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S11AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S11AHM3/I?
For technical support, including SM8S11AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S11AHM3/I requirements.
6.How does Aetrix verify that SM8S11AHM3/I is sourced from the original manufacturer or authorized distributors?
All SM8S11AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S11AHM3/I meets industry standards.
7.What is the process for return or replacement of SM8S11AHM3/I?
All SM8S11AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S11AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S11AHM3/I part is unused and in its original packaging.
Return procedure for SM8S11AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S11AHM3/I Tags

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onsemi

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DESD3V3E1BL-7B
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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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