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Vishay General Semiconductor - Diodes Division SM8S11ATHE3/I
- Part No.:
- SM8S11ATHE3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AC
- Datasheet:
-
SM8S11ATHE3/I.pdf
- Description:
- TVS DIODE 11VWM 18.2VC DO218AC
- Quantity:
- Payment:
- Shipping:
Inventory:5,389
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Product details
Overview
SM8S11ATHE3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 12.2 V (min) to 13.5 V (max) breakdown voltage (VBR), 18.2 V clamping voltage (VC) at 363 A peak pulse current, 6600 W peak pulse power (10/1000 µs), 175 °C junction temperature rating, and DO-218AC package with heatsink-anode polarity.
For engineers reviewing the SM8S11ATHE3/I datasheet, SM8S11ATHE3/I pinout, SM8S11ATHE3/I application, or SM8S11ATHE3/I equivalent, key selection criteria include its AEC-Q101 qualification, ISO7637-2 compliance for load dump transients, low leakage (<10 µA at VWM = 11 V), and thermal resistance of 0.90 °C/W (junction-to-case).
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-reliability automotive environments. Its unidirectional structure places the metal heatsink as the anode terminal, enabling efficient thermal dissipation under high-energy transients like 10 ms exponential load dump waveforms.
It operates across -55 °C to +175 °C, supports 700 A non-repetitive forward surge current (IFSM), and maintains stable VBR with a temperature coefficient of 0.072 %/°C - critical for consistent clamping performance in under-hood electronics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min–max) | 12.2 V – 13.5 V at 5 mA: defines precise voltage threshold where avalanche conduction begins |
| VC @ IPPM | 18.2 V at 363 A (10/1000 µs): maximum clamped voltage seen by protected circuit during worst-case surge |
| PPPM (10/1000 µs) | 6600 W: peak transient energy absorption capability without failure |
| TJ max. | +175 °C: enables operation in high-temperature engine bay environments without derating |
| RθJC | 0.90 °C/W: allows direct mounting to PCB copper pour or heatsink for effective thermal management |
| ID @ VWM | <10 µA at 11 V: ensures minimal standby power loss and signal integrity in always-on systems |
| AEC-Q101 | Qualified: validated for automotive-grade reliability including temperature cycling, HTRB, and ESD |
Pinout & Package
Package: DO-218AC - thermally enhanced surface-mount case with integral metal heatsink; anode connected to heatsink (lead 2), cathode on lead 1; RoHS-compliant, MSL Level 1, JESD201 Class 2 whisker tested.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Cathode | Connected to protected circuit's positive rail; carries reverse surge current into device during clamping |
| Lead 2 / Metal Heatsink | Anode | Primary thermal path and electrical return; must be soldered to large copper area for thermal and current handling |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier process ensures stable VBR and low leakage over lifetime and temperature |
| High-temperature operation | Rated to +175 °C junction temperature - eliminates need for external derating in engine control units |
| ISO7637-2 compliance | Validated for load dump transients per automotive standard - reduces need for additional filtering stages |
| Low forward voltage drop | VF ≤ 1.8 V at 100 A (8.3 ms half-sine): minimizes conduction loss during forward surge events |
| DO-218AC thermal design | 0.90 °C/W RθJC enables >8 W continuous power dissipation with proper PCB heatsinking |
Applications
| Engine Control Unit (ECU) Power Input Protection | Body Control Module (BCM) CAN Bus Power Rail |
|---|---|
Use Scenario: Protects 12 V supply input of engine control units against alternator load dump transients up to 35 V, 100 ms duration. IC Role / Device Role / Timing Role: Primary clamping device placed directly at power entry point before DC/DC converters and microcontrollers. Use Value: Clamps to 18.2 V at 363 A, limiting downstream voltage stress and eliminating need for oversized input capacitors. | Use Scenario: Shields BCM power rail feeding isolated CAN transceivers from battery line surges during jump-start or alternator regulation faults. IC Role / Device Role / Timing Role: Unidirectional TVS placed between fused battery feed and LDO input, with heatsink tied to chassis ground. Use Value: Withstands 6600 W pulses while maintaining <10 µA leakage - preserves low-power sleep mode integrity. |
| Automotive Lighting Driver Supply | ADAS Camera Module Power Input |
Use Scenario: Safeguards LED driver ICs in headlamp modules exposed to inductive switching spikes from relay-controlled ballasts. IC Role / Device Role / Timing Role: Fast-response TVS mounted adjacent to driver IC input pins, leveraging DO-218AC low-inductance layout. Use Value: 10/1000 µs response ensures clamping within 1 µs - prevents latch-up or gate oxide damage in MOSFET drivers. | Use Scenario: Protects 5 V or 3.3 V power rails of camera modules in rear-view or surround-view systems from battery transients. IC Role / Device Role / Timing Role: Secondary TVS stage after primary fuse and LC filter, providing final overvoltage barrier before image sensor and ISP. Use Value: AEC-Q101 qualification and 175 °C rating ensure reliability in sealed, thermally constrained camera housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S11AHM3 | Same VBR, VC, and PPPM; HM3 suffix indicates halogen-free, matte tin-plated leads with enhanced whisker resistance (JESD201 Class 2) | Identical automotive load dump protection function; preferred for new designs requiring halogen-free compliance | Select SM8S11AHM3 for new designs - SM8S11ATHE3/I is Not For New Designs per Vishay documentation |
| SMAJ12A | Lower PPPM (400 W), smaller SMA package (RθJC ≈ 50 °C/W), VC = 19.9 V at 20.7 A - insufficient for ISO7637-2 load dump | Limited to low-energy transients (e.g., ESD, relay bounce); not suitable for alternator load dump | Only consider SMAJ12A for cost-sensitive non-automotive applications with sub-500 W surge requirements |
Compared with SM8S11AHM3, SM8S11ATHE3/I shares identical electrical specs but lacks halogen-free certification and updated whisker testing; compared with SMAJ12A, it delivers 16.5× higher surge power and 17.5× higher peak current - making it the only viable option for AEC-Q101-compliant load dump protection.
Availability
SM8S11ATHE3/I is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, lighting driver systems, and ADAS camera modules requiring stable component supply and long-term lifecycle support.
Supply support for SM8S11ATHE3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The SM8SxxAT family was engineered specifically for automotive-grade transient suppression - emphasizing thermal robustness, AEC-Q101 compliance, and ISO7637-2 load dump immunity in under-hood power systems.
FAQ
What is the primary function of the SM8S11ATHE3/I in automotive circuits?
The SM8S11ATHE3/I functions as a unidirectional transient voltage suppressor that clamps high-energy load dump transients on 12 V automotive power rails. It protects downstream ICs by limiting voltage to 18.2 V during 363 A surges. Its DO-218AC package and 175 °C rating make SM8S11ATHE3/I ideal for engine bay applications where thermal and surge resilience are critical.
Is the SM8S11ATHE3/I AEC-Q101 qualified and what does that mean for design use?
Yes, the SM8S11ATHE3/I is AEC-Q101 qualified - verified through stress tests including temperature cycling, high-temperature reverse bias, and ESD. This qualification confirms suitability for automotive power electronics, such as ECUs and BCMs. However, note that Vishay marks SM8S11ATHE3/I as "Not For New Designs"; new projects should migrate to SM8S11AHM3 while maintaining SM8S11ATHE3/I for legacy BOM continuity.
What is the correct PCB layout practice for the SM8S11ATHE3/I anode terminal?
The anode of the SM8S11ATHE3/I is the metal heatsink (Lead 2), which must be soldered to a large, low-thermal-resistance copper area - ideally a dedicated thermal pad connected to internal ground planes via multiple vias. This ensures effective heat transfer and sustains the rated 6600 W pulse power. Incorrect layout (e.g., small pad or no thermal vias) will cause premature thermal failure during repeated surges.
How does the SM8S11ATHE3/I compare to standard SMAJ-series TVS diodes in surge handling?
The SM8S11ATHE3/I delivers 6600 W peak pulse power (10/1000 µs), versus 400 W for SMAJ12A - a 16.5× difference. Its DO-218AC package achieves RθJC = 0.90 °C/W, enabling far superior thermal dissipation. These attributes make SM8S11ATHE3/I capable of surviving ISO7637-2 load dump events, whereas SMAJ12A is limited to lower-energy transients like ESD or relay bounce.
What does the HE3 suffix indicate in SM8S11ATHE3/I and how does it affect compliance?
The HE3 suffix in SM8S11ATHE3/I denotes RoHS-compliant, matte tin-plated leads that meet J-STD-002 and JESD22-B102 solderability standards, plus JESD201 Class 2 whisker resistance. It confirms suitability for lead-free reflow assembly and long-term reliability in automotive environments. While compliant, SM8S11ATHE3/I is not halogen-free - newer HM3 variants address that requirement for future designs.
SM8S11ATHE3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 363A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AC
SM8S11ATHE3/I FAQ
1.How can I place an order for SM8S11ATHE3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S11ATHE3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S11ATHE3/I reliable?
The price and inventory of SM8S11ATHE3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S11ATHE3/I is usually 5 days.
3.What payment methods are accepted for SM8S11ATHE3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S11ATHE3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S11ATHE3/I?
SM8S11ATHE3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S11ATHE3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S11ATHE3/I?
For technical support, including SM8S11ATHE3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S11ATHE3/I requirements.
6.How does Aetrix verify that SM8S11ATHE3/I is sourced from the original manufacturer or authorized distributors?
All SM8S11ATHE3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S11ATHE3/I meets industry standards.
7.What is the process for return or replacement of SM8S11ATHE3/I?
All SM8S11ATHE3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S11ATHE3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S11ATHE3/I part is unused and in its original packaging.
Return procedure for SM8S11ATHE3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S11ATHE3/I Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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