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Vishay General Semiconductor - Diodes Division SM8S12A-001HE3_A/I
- Part No.:
- SM8S12A-001HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S12A-001HE3_A/I.pdf
- Description:
- TVS DIODE 12VWM DO218AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,354
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Product details
Overview
SM8S12A-001HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 12 V stand-off voltage (VWM), 14.0 V nominal breakdown (VBR), 6600 W peak pulse power (10/1000 μs), and AEC-Q101 qualified for automotive load dump protection.
For engineers reviewing the SM8S12A-001HE3_A/I datasheet, SM8S12A-001HE3_A/I pinout, SM8S12A-001HE3_A/I application, or SM8S12A-001HE3_A/I equivalent, this device delivers high-reliability clamping in 175 °C junction environments, low leakage (<10 μA at VWM), and ISO7637-2 compliance - critical for 12 V automotive power rail surge suppression.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to achieve stable clamping under repetitive transients while maintaining low forward voltage drop (≤1.8 V at 100 A) and high thermal robustness. Its DO-218AB package provides low thermal resistance (RθJM = 0.35 °C/W) and MSL Level 1 rating with 245 °C reflow compatibility.
The device operates unidirectionally with heatsink as anode, supports 700 A IFSM surge current, and exhibits +0.074 %/°C temperature coefficient of VBR - enabling predictable voltage shift across -55 °C to +175 °C operating range without derating ambiguity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12.0 V - Maximum continuous reverse voltage before clamping begins; defines safe operating margin for 12 V automotive systems. |
| VBR (nom) | 14.0 V - Breakdown voltage at 5 mA test current; ensures reliable turn-on during load dump events above system nominal voltage. |
| VC @ IPPM | 19.9 V - Clamping voltage at 332 A peak pulse current; limits downstream IC stress to <20 V during 6600 W surges. |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power handling; sustains automotive load dump transients per ISO7637-2 without failure. |
| ID @ VWM | <10 μA - Reverse leakage at stand-off voltage; minimizes quiescent power loss in always-on vehicle modules. |
| TJ max | +175 °C - Maximum junction temperature; enables placement near hot engine-control units without thermal derating. |
| Polarity | Unidirectional - Anode connected to heatsink; requires correct orientation in PCB layout for proper clamping polarity. |
Pinout & Package
Package: DO-218AB - molded surface-mount case with matte tin-plated leads, UL 94 V-0 rated compound, and heatsink-integrated anode terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Current entry point during clamping | Electrically connected to metal heatsink base; must be soldered to large copper area for thermal and electrical performance. |
| Cathode (Lead 1) | Current exit point during clamping | Standard signal-side connection; routed to protected line (e.g., battery rail input); polarity-sensitive placement required. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated reliability for automotive underhood applications including temperature cycling, humidity, and mechanical shock. |
| Junction passivation | Stable VBR drift <±5 % over lifetime; prevents parameter shift due to moisture ingress or bias stress in harsh environments. |
| MSL Level 1 rating | Zero floor life limitation; supports standard SMT reflow without baking or special handling prior to assembly. |
| ISO7637-2 compliance | Meets Pulse 5a/b load dump test profiles up to 120 V/100 ms; certified for direct battery-line protection. |
| Low RθJM (0.35 °C/W) | Enables >80 % of rated PPPM to be dissipated through heatsink interface; reduces reliance on PCB copper for thermal management. |
Applications
| Engine Control Unit (ECU) Power Input | Body Control Module (BCM) Battery Rail |
|---|---|
Use Scenario: Protects microcontroller power supply from alternator load dump transients during ignition-off events. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between battery feed and DC-DC input stage. Use Value: Limits voltage excursion to ≤19.9 V during 6600 W surges, preventing latch-up or damage to 3.3 V/5 V LDOs and MCU cores. |
Use Scenario: Shields LIN bus transceivers and LED drivers from battery line noise during door lock/unlock actuation. IC Role / Device Role / Timing Role: Primary TVS on 12 V main rail upstream of local regulators and communication ICs. Use Value: Maintains <10 μA leakage at 12 V, avoiding parasitic drain in sleep-mode vehicle states lasting weeks. |
| Advanced Driver Assistance System (ADAS) Camera Module | Electric Power Steering (EPS) Motor Driver |
Use Scenario: Safeguards image sensor and SerDes interface from ignition-induced spikes during cold cranking. IC Role / Device Role / Timing Role: Standoff-clamp TVS on camera module's main power input, adjacent to bulk capacitance. Use Value: Withstands 175 °C junction temperature, enabling placement near heat-generating ISP processors without derating. |
Use Scenario: Suppresses inductive kickback from H-bridge MOSFET switching during steering assist torque transitions. IC Role / Device Role / Timing Role: High-energy TVS mounted directly on motor driver PCB near power stage output traces. Use Value: Delivers 700 A single-half-sine IFSM capability, absorbing energy from 12 V/30 A motor windings without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S12AHM3_A/I | Same VWM/VBR/PPPM specs; HM3 suffix denotes enhanced material formulation with improved whisker resistance (JESD 201 Class 2) and tighter VBR tolerance (±3 % vs ±5 %). | Preferred for new designs targeting long-term field reliability in vibration-prone EPS or ADAS modules. | Select SM8S12AHM3_A/I when whisker mitigation and tighter parametric control are required; not drop-in due to revised qualification documentation. |
| SMAJ12A | Lower PPPM (400 W), smaller SMA package (RθJA = 65 °C/W), no AEC-Q101 qualification, and only 150 °C TJ max. | Suitable for non-automotive industrial controls where cost and board space outweigh surge margin and temperature requirements. | Choose SMAJ12A only for cost-sensitive consumer or commercial applications lacking automotive qualification needs. |
Compared with SM8S12A-001HE3_A/I, SM8S12AHM3_A/I offers superior long-term metallurgical stability and tighter VBR control but requires design revalidation; SMAJ12A sacrifices 94 % peak power handling and automotive qualification for footprint reduction and lower unit cost.
Availability
SM8S12A-001HE3_A/I is available at Aetrix Electronics and suitable for automotive ECU protection, body electronics power rail hardening, and ADAS camera module surge suppression requiring stable component supply across extended production lifecycles.
Supply support for SM8S12A-001HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM8SxxA family was engineered specifically for automotive-grade transient suppression, emphasizing AEC-Q101 qualification, 175 °C operation, and ISO7637-2 compliance in surface-mount form factors.
FAQ
What is the maximum clamping voltage of the SM8S12A-001HE3_A/I at its rated peak pulse current?
The SM8S12A-001HE3_A/I has a maximum clamping voltage (VC) of 19.9 V at its specified peak pulse current (IPPM) of 332 A under 10/1000 μs waveform conditions. This value is measured per JEDEC standards and guarantees that downstream circuitry remains below 20 V during worst-case load dump events. The SM8S12A-001HE3_A/I maintains this clamping performance across its full operating temperature range.
Is the SM8S12A-001HE3_A/I suitable for new automotive designs despite the "Not For New Designs" notice?
The "Not For New Designs" notice applies to the entire SM8S10A–SM8S43A series and indicates Vishay recommends SM8S10AHM3–SM8S85AHM3 for future projects. However, SM8S12A-001HE3_A/I remains fully manufacturable, stocked, and supported for legacy program continuity. Its AEC-Q101 qualification and ISO7637-2 compliance remain valid for ongoing production of existing automotive platforms.
How does the DO-218AB package of the SM8S12A-001HE3_A/I improve thermal performance over standard SMA packages?
The DO-218AB package of the SM8S12A-001HE3_A/I integrates the anode into a large metal heatsink base, achieving RθJM = 0.35 °C/W - over 5× better than typical SMA packages. This allows >80 % of 6600 W surge energy to be conducted directly into the PCB copper pour, reducing junction temperature rise by ~40 °C compared to SMAJ12A under identical conditions. The SM8S12A-001HE3_A/I thus sustains higher surge repetition rates without thermal runaway.
Does the SM8S12A-001HE3_A/I meet RoHS and lead-free requirements?
Yes, the SM8S12A-001HE3_A/I carries the HE3 suffix, confirming it is RoHS-compliant, halogen-free, and features matte tin-plated leads compliant with J-STD-002 and JESD 22-B102. It also passes JESD 201 Class 2 whisker testing, ensuring long-term solder joint integrity in automotive thermal cycling environments. The SM8S12A-001HE3_A/I meets all material categorization requirements defined in Vishay document 99912.
What is the reverse leakage current specification for the SM8S12A-001HE3_A/I at maximum operating temperature?
At TA = 25 °C, the SM8S12A-001HE3_A/I exhibits ≤10 μA reverse leakage current at its 12.0 V stand-off voltage (VWM). At elevated temperature, leakage increases to ≤25 μA at TJ = 175 °C - still well within automotive low-power sleep-mode budgets. This performance is verified per the datasheet's Electrical Characteristics table and supports extended vehicle off-time without excessive battery drain. The SM8S12A-001HE3_A/I maintains this low-leakage behavior across its full -55 °C to +175 °C operating range.
SM8S12A-001HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 332A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S12A-001HE3_A/I FAQ
1.How can I place an order for SM8S12A-001HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S12A-001HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S12A-001HE3_A/I reliable?
The price and inventory of SM8S12A-001HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S12A-001HE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S12A-001HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S12A-001HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S12A-001HE3_A/I?
SM8S12A-001HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S12A-001HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S12A-001HE3_A/I?
For technical support, including SM8S12A-001HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S12A-001HE3_A/I requirements.
6.How does Aetrix verify that SM8S12A-001HE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S12A-001HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S12A-001HE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S12A-001HE3_A/I?
All SM8S12A-001HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S12A-001HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S12A-001HE3_A/I part is unused and in its original packaging.
Return procedure for SM8S12A-001HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S12A-001HE3_A/I Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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