Vishay General Semiconductor - Diodes Division SM8S12AHE3/2D
- Part No.:
- SM8S12AHE3/2D
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S12AHE3/2D.pdf
- Description:
- TVS DIODE 12VWM 19.9VC DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:9,850
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM8S12AHE3/2D from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 13.3 V minimum breakdown voltage (VBR), 12.0 V stand-off voltage (VWM), 19.9 V maximum clamping voltage (VC) at 332 A peak pulse current, and 6600 W peak pulse power (10/1000 μs). Its DO-218AB package supports high-reliability automotive applications operating up to TJ = 175 °C.
For engineers reviewing the SM8S12AHE3/2D datasheet, SM8S12AHE3/2D pinout, SM8S12AHE3/2D application, or SM8S12AHE3/2D equivalent, key selection criteria include unidirectional polarity, ISO7637-2 compliance, AEC-Q101 qualification, low leakage (<10 μA at VWM), and thermal resistance of 0.90 °C/W (junction-to-case).
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for junction stability under high-temperature stress. Its unidirectional configuration provides forward conduction path with 1.8 V max forward voltage at 100 A, enabling robust clamping during load dump transients without reverse conduction.
The device meets MSL Level 1 per J-STD-020 and is qualified to AEC-Q101 for automotive use. Its DO-218AB case features a metal heatsink terminal (anode) and matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 13.3 V / 14.7 V - ensures reliable triggering above system nominal voltage while avoiding false trips |
| VWM | 12.0 V - maximum continuous reverse operating voltage compatible with 12 V automotive systems |
| VC @ IPPM | 19.9 V - clamps transients to safe levels for downstream 24 V-rated components during 332 A surge |
| PPPM (10/1000 μs) | 6600 W - handles severe load dump energy without failure in engine control modules |
| IFSM | 700 A - withstands repetitive 8.3 ms half-sine surges common in alternator switching events |
| TJ max. | 175 °C - enables operation in under-hood environments with minimal derating |
| RθJC | 0.90 °C/W - allows efficient heat transfer to PCB copper or external heatsink for sustained power dissipation |
Pinout & Package
Package: DO-218AB - surface-mount, anode-heatsink configuration with metal base acting as primary thermal and electrical terminal. Leads are matte tin-plated; anode is connected to the metal heatsink (Lead 2), cathode to Lead 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Cathode | Connected to protected circuit node; carries transient current into device during clamping |
| Lead 2 / Metal Heatsink | Anode | Primary thermal path and return path to ground/power rail; must be soldered to large copper area for RθJC performance |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Enables stable VBR and low leakage (<10 μA) over lifetime at 175 °C junction temperature |
| AEC-Q101 qualification | Validates reliability for automotive powertrain and body electronics per stress test requirements |
| ISO7637-2 compliance | Guarantees survivability against standardized automotive load dump pulses (Pulse 5a) |
| MSL Level 1 rating | Permits unlimited floor life and reflow at 245 °C peak without moisture-induced damage |
| Low forward voltage | ≤1.8 V at 100 A enables efficient forward conduction during asymmetrical transients |
Applications
| Engine Control Unit (ECU) Protection | Body Control Module (BCM) |
|---|---|
Use Scenario: Protects microcontroller power rails and CAN transceivers from alternator load dump spikes during battery disconnect/reconnect events. IC Role / Device Role / Timing Role: Unidirectional TVS clamps reverse-biased transients on 12 V supply line, limiting voltage to ≤19.9 V during 332 A surge. Use Value: Prevents latch-up or permanent damage to 24 V-rated regulators and interface ICs exposed to ISO7637-2 Pulse 5a. | Use Scenario: Shields LIN bus transceivers and door module drivers from inductive kickback generated by window motor and lock actuator switching. IC Role / Device Role / Timing Role: Fast-response clamping element placed at power entry point to absorb 6600 W transient energy within microseconds. Use Value: Maintains signal integrity and prevents reset events in distributed body electronics operating at ambient up to 105 °C. |
| Advanced Driver Assistance Systems (ADAS) Camera Power | Start-Stop System Battery Interface |
Use Scenario: Safeguards image sensor and ISP power supplies in front-facing cameras mounted near engine compartment. IC Role / Device Role / Timing Role: Primary overvoltage protection device on 12 V input rail, leveraging 0.90 °C/W RθJC for thermal stability under repeated surges. Use Value: Ensures uninterrupted video capture during cold-cranking and load dump events critical for collision avoidance functionality. | Use Scenario: Protects bidirectional DC-DC converter control circuitry from voltage reversals and surges during frequent engine restart cycles. IC Role / Device Role / Timing Role: Unidirectional clamp referenced to battery ground, absorbing energy from regenerative braking and alternator transients. Use Value: Extends service life of MOSFET gate drivers and current sense amplifiers subjected to >100,000 start-stop cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Littelfuse SMAJ12A | DO-214AC package; 0.35 °C/W higher RθJA; same VWM/VC but 400 W lower PPPM (6200 W) | Less effective thermal coupling to PCB; requires larger copper area for equivalent power handling | Select when DO-214AC footprint is fixed and 6200 W surge capacity suffices |
| ON Semiconductor 1.5SMC12A | DO-214AB package; 1.25 °C/W RθJC; 1000 W lower PPPM (5600 W); non-AEC-Q101 | Not qualified for automotive under-hood use; limited to cabin or industrial applications | Select only for cost-sensitive non-automotive designs where AEC-Q101 is not required |
Compared with SMAJ12A and 1.5SMC12A, SM8S12AHE3/2D delivers superior thermal performance (0.90 °C/W), higher surge rating (6600 W), and full AEC-Q101 qualification-making it the preferred choice for demanding automotive load dump protection where reliability and power density are critical.
Availability
SM8S12AHE3/2D is available at Aetrix Electronics and suitable for automotive ECU protection, ADAS camera power conditioning, and start-stop system battery interface applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SM8S12AHE3/2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on automotive-grade reliability and high-temperature performance.
The SM8SxxA series is engineered specifically for automotive load dump suppression, combining high-power transient absorption, AEC-Q101 qualification, and DO-218AB thermal efficiency to meet stringent ISO7637-2 requirements.
FAQ
What is the clamping voltage of SM8S12AHE3/2D at its rated peak pulse current?
The SM8S12AHE3/2D has a maximum clamping voltage (VC) of 19.9 V when subjected to its rated peak pulse current of 332 A using a 10/1000 μs waveform. This value is measured at TC = 25 °C and ensures downstream 24 V-rated ICs remain within safe operating limits during automotive load dump events. The SM8S12AHE3/2D maintains this clamping performance across its full operating temperature range due to its passivated junction design.
Is SM8S12AHE3/2D qualified for automotive applications?
Yes, SM8S12AHE3/2D is AEC-Q101 qualified and rated for operation from -55 °C to +175 °C junction temperature. It meets ISO7637-2 load dump requirements and is packaged in DO-218AB with MSL Level 1 rating-making it suitable for under-hood automotive applications including engine control units and body control modules. The SM8S12AHE3/2D also complies with JESD201 Class 2 whisker testing and RoHS directives.
What is the thermal resistance of SM8S12AHE3/2D, and how does it affect PCB layout?
The SM8S12AHE3/2D has a typical junction-to-case thermal resistance (RθJC) of 0.90 °C/W. This low value requires direct thermal connection of the metal heatsink (anode) to a large copper pour or external heatsink to dissipate up to 8 W continuously. PCB layout must allocate ≥200 mm² of 2-oz copper connected to Lead 2; insufficient copper area will cause excessive junction temperature rise and premature failure during repeated surges. The SM8S12AHE3/2D datasheet provides recommended mounting pad dimensions for optimal thermal performance.
Does SM8S12AHE3/2D support bidirectional transient suppression?
No, SM8S12AHE3/2D is a unidirectional TVS diode with anode-connected metal heatsink and cathode on Lead 1. It conducts only in forward bias during positive transients and blocks reverse voltage up to VWM = 12.0 V. For bidirectional protection, a separate device such as SM8S12AY or paired unidirectional units would be required. The SM8S12AHE3/2D polarity is fixed and marked on the package with a cathode band adjacent to Lead 1.
What packaging format is used for SM8S12AHE3/2D, and what does the "/2D" suffix indicate?
SM8S12AHE3/2D is supplied in 13" diameter plastic tape and reel, with 750 units per reel. The "/2D" suffix denotes the preferred package code indicating anode orientation toward the sprocket hole-a critical detail for automated placement verification. The "HE3" prefix confirms RoHS compliance, AEC-Q101 qualification, and JESD201 Class 2 whisker resistance. This packaging ensures consistent orientation and process compatibility for high-volume SMT assembly of the SM8S12AHE3/2D.
SM8S12AHE3/2D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 332A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S12AHE3/2D FAQ
1.How can I place an order for SM8S12AHE3/2D through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S12AHE3/2D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S12AHE3/2D reliable?
The price and inventory of SM8S12AHE3/2D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S12AHE3/2D is usually 5 days.
3.What payment methods are accepted for SM8S12AHE3/2D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S12AHE3/2D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S12AHE3/2D?
SM8S12AHE3/2D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S12AHE3/2D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S12AHE3/2D?
For technical support, including SM8S12AHE3/2D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S12AHE3/2D requirements.
6.How does Aetrix verify that SM8S12AHE3/2D is sourced from the original manufacturer or authorized distributors?
All SM8S12AHE3/2D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S12AHE3/2D meets industry standards.
7.What is the process for return or replacement of SM8S12AHE3/2D?
All SM8S12AHE3/2D units undergo pre-shipment inspection (PSI). If there is an issue with SM8S12AHE3/2D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S12AHE3/2D part is unused and in its original packaging.
Return procedure for SM8S12AHE3/2D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S12AHE3/2D Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

