Vishay General Semiconductor - Diodes Division SM8S12AHE3_A/I
- Part No.:
- SM8S12AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S12AHE3_A/I.pdf
- Description:
- TVS DIODE 12VWM 19.9VC DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,537
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Product details
Overview
SM8S12AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 12 V stand-off voltage (VWM), 14.0 V nominal breakdown voltage (VBR), 6600 W peak pulse power (10/1000 μs), 175 °C maximum junction temperature, and DO-218AB package with anode-heatsink polarity.
For engineers reviewing the SM8S12AHE3_A/I datasheet, SM8S12AHE3_A/I pinout, SM8S12AHE3_A/I application, or SM8S12AHE3_A/I equivalent, this device is selected for high-reliability 12 V automotive power rail protection where AEC-Q101 qualification, ISO7637-2 compliance, and 175 °C operation are mandatory design requirements.
Technical Context
The SM8S12AHE3_A/I employs passivated anisotropic rectifier technology to deliver low leakage (<10 μA at VWM), low forward voltage drop (≤1.8 V @ 100 A), and stable clamping performance across -55 °C to +175 °C. Its thermal resistance junction-to-mount is 0.35 °C/W, enabling high-power transient absorption on metal heatsinks.
It is rated for 700 A non-repetitive forward surge current (8.3 ms half-sine), meets MSL Level 1 per J-STD-020, and is qualified to AEC-Q101. The device is not for new designs; Vishay recommends SM8S12AHM3 as a direct replacement path.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12.0 V - Maximum continuous reverse operating voltage before clamping begins; defines system nominal rail compatibility. |
| VBR (nom) | 14.0 V - Breakdown voltage at 5 mA test current; ensures reliable turn-on during transients above nominal rail. |
| VC @ IPPM | 19.9 V - Clamping voltage at 332 A peak pulse current (10/1000 μs); determines maximum stress imposed on protected ICs. |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power handling; supports severe load dump events per ISO7637-2 without failure. |
| TJ max | +175 °C - Maximum junction temperature; enables under-hood deployment in modern automotive ECUs. |
| Polarity | Unidirectional - Anode connected to heatsink; requires correct orientation in PCB layout for proper circuit protection. |
| Package | DO-218AB - Surface-mount case with integrated metal heatsink; provides low RθJM (0.35 °C/W) for thermal reliability. |
Pinout & Package
Package: DO-218AB - molded surface-mount case with exposed metal heatsink acting as the anode terminal. Meets UL 94 V-0, RoHS-compliant, and JESD201 Class 2 whisker-tested.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Positive input / power rail connection | Must be soldered to large copper pour or external heatsink; serves as primary thermal and electrical path for surge current. |
| Cathode (Lead 1) | Protected output / load side | Connected to downstream electronics; clamps transients by shunting current to anode when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JEDEC standards. |
| Junction passivation | Optimized anisotropic rectifier structure reduces leakage drift over time and temperature, ensuring long-term stability. |
| ISO7637-2 compliance | Withstands defined load dump waveforms (e.g., Pulse 5a) up to 6600 W without degradation or parametric shift. |
| MSL Level 1 rating | Can be reflowed at peak 245 °C without moisture-induced damage; eliminates pre-bake requirement for SMT assembly. |
| Low clamping ratio (VC/VBR) | 1.42 (19.9 V / 14.0 V) - tight ratio minimizes overvoltage exposure to protected components during clamping. |
Applications
| Automotive Body Control Module (BCM) | Engine Control Unit (ECU) Power Input |
|---|---|
Use Scenario: Protects BCM microcontroller and CAN transceivers from alternator load dump spikes during battery disconnect/reconnect events. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between 12 V supply rail and ground, with anode tied to chassis/heatsink. Use Value: Limits transient voltage to ≤19.9 V, preventing latch-up or permanent damage to 3.3 V/5 V logic powered via LDO regulators. |
Use Scenario: Shields ECU main power input against ISO7637-2 Pulse 5a (load dump) and Pulse 1 (inductive switch-off) transients. IC Role / Device Role / Timing Role: Primary front-end surge suppression element mounted directly at connector entry point. Use Value: Absorbs 6600 W surges without failure, maintaining system uptime and eliminating need for redundant protection stages. |
| ADAS Camera Power Supply | Electric Power Steering (EPS) ECU |
Use Scenario: Safeguards image sensor and serializer ICs in rear-view or surround-view cameras exposed to vehicle-level transients. IC Role / Device Role / Timing Role: Standoff-rated TVS on 12 V input stage, operating continuously at ambient up to +105 °C. Use Value: Maintains <10 μA leakage at 12 V and 175 °C junction, avoiding quiescent current penalties in always-on camera modules. |
Use Scenario: Protects motor driver FETs and position sensor interfaces in EPS systems subject to harsh under-hood conditions. IC Role / Device Role / Timing Role: High-energy clamping device mounted on metal-core PCB with direct thermal coupling to heatsink. Use Value: Delivers 0.35 °C/W RθJM, enabling sustained 8 W dissipation and reliable operation at TJ = 175 °C during repeated surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S12AHM3 | Same VWM (12 V), VBR (14.0 V), and DO-218AB package; updated revision with enhanced robustness and same AEC-Q101 qualification. | Identical use cases; intended as direct replacement per Vishay's "Not For New Designs" notice for HE3 suffix parts. | Select SM8S12AHM3 for new designs requiring long-term supply continuity and latest process improvements. |
| SMAJ12A | Lower PPPM (400 W vs. 6600 W), SMA package (RθJA ≈ 90 °C/W), no AEC-Q101 qualification, and 150 °C TJ max. | Limited to low-energy industrial or consumer applications; unsuitable for automotive load dump or under-hood deployment. | Use only in cost-sensitive, non-automotive applications where surge energy is below 100 mJ and ambient temperature remains <85 °C. |
Compared with SM8S12AHE3_A/I, SM8S12AHM3 offers identical electrical and thermal performance with improved manufacturing consistency, while SMAJ12A provides basic transient suppression at significantly lower energy capacity and reliability grade-making it inappropriate for automotive safety-critical rails.
Availability
SM8S12AHE3_A/I is available at Aetrix Electronics and suitable for automotive body control modules, engine control units, ADAS camera power supplies, and electric power steering ECUs requiring stable component supply under AEC-Q101 and ISO7637-2 compliance.
Supply support for SM8S12AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on automotive, industrial, and computing applications.
The SM8S series is part of Vishay's PAR® (Protection Against Transients) platform, engineered specifically for high-energy automotive load dump protection with AEC-Q101 qualification and 175 °C operation.
FAQ
What is the maximum clamping voltage of the SM8S12AHE3_A/I at its rated peak pulse current?
The SM8S12AHE3_A/I has a maximum clamping voltage (VC) of 19.9 V when subjected to its rated peak pulse current of 332 A under the 10/1000 μs waveform. This value is measured per standard test conditions and defines the upper voltage limit imposed on protected circuitry during worst-case transients. The SM8S12AHE3_A/I maintains this clamping performance across its full operating temperature range.
Is the SM8S12AHE3_A/I suitable for new automotive designs?
No-the SM8S12AHE3_A/I is marked "Not For New Designs" in Vishay's official documentation, with SM8S12AHM3 designated as the recommended alternative. While SM8S12AHE3_A/I remains available for legacy program support, new designs should specify SM8S12AHM3 to ensure long-term supply, updated process control, and continued AEC-Q101 compliance assurance. The SM8S12AHE3_A/I retains full functional equivalence for existing implementations.
What does the "HE3_A/I" suffix indicate in SM8S12AHE3_A/I?
The "HE3" suffix denotes RoHS-compliant, Pb-free termination with matte tin plating and JESD201 Class 2 whisker resistance; "A" indicates ±5% VBR tolerance and unidirectional polarity; "I" specifies the preferred packaging code for 13-inch tape-and-reel delivery with anode oriented toward sprocket holes. This full suffix confirms AEC-Q101 qualification and DO-218AB packaging for the SM8S12AHE3_A/I.
How does the thermal performance of SM8S12AHE3_A/I compare to standard SMA packages?
The SM8S12AHE3_A/I uses the DO-218AB package with an integrated metal heatsink, achieving RθJM = 0.35 °C/W-over 250× better than typical SMA packages (~90 °C/W). This allows the SM8S12AHE3_A/I to dissipate 8 W continuously on a heatsink versus ~0.3 W for SMAJ12A. The superior thermal path makes SM8S12AHE3_A/I viable for under-hood automotive applications where ambient exceeds 105 °C.
Does the SM8S12AHE3_A/I meet ISO7637-2 requirements out-of-the-box?
Yes-the SM8S12AHE3_A/I is explicitly stated to meet ISO7637-2 surge specifications under defined test conditions, including Pulse 5a (load dump). Its 6600 W peak pulse power rating and 19.9 V clamping voltage enable compliance with the standard's voltage limits when properly mounted with low-inductance layout and adequate heatsinking. System-level validation per ISO7637-2 remains the responsibility of the end designer, but the SM8S12AHE3_A/I provides the foundational protection capability.
SM8S12AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 332A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S12AHE3_A/I FAQ
1.How can I place an order for SM8S12AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S12AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S12AHE3_A/I reliable?
The price and inventory of SM8S12AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S12AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S12AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S12AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S12AHE3_A/I?
SM8S12AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S12AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S12AHE3_A/I?
For technical support, including SM8S12AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S12AHE3_A/I requirements.
6.How does Aetrix verify that SM8S12AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S12AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S12AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S12AHE3_A/I?
All SM8S12AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S12AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S12AHE3_A/I part is unused and in its original packaging.
Return procedure for SM8S12AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S12AHE3_A/I Tags

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Toshiba Semiconductor and Storage

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