Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM8S12AHM3/I

Part No.:
SM8S12AHM3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-218AC
Datasheet:
AetrixSM8S12AHM3/I.pdf
Description:
TVS DIODE 12VWM 19.9VC DO218AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,701

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM8S12AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 12 V stand-off voltage (VWM), 14.0 V nominal breakdown voltage (VBR), 6600 W peak pulse power (10/1000 μs), and 175 °C junction temperature-designed for automotive load dump protection in engine control units and body electronics.

For engineers reviewing the SM8S12AHM3/I datasheet, SM8S12AHM3/I pinout, SM8S12AHM3/I application, or SM8S12AHM3/I equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJM = 0.35 °C/W), clamping behavior (VC = 19.9 V at IPPM), and DO-218AB mechanical interface details required for robust overvoltage design in high-reliability automotive systems.

Technical Context

The SM8S12AHM3/I uses passivated anisotropic rectifier technology to achieve low leakage (<10 μA at VWM) and low forward voltage drop (VF ≤ 1.8 V at 100 A), enabling efficient clamping during fast transients. Its unidirectional polarity and heatsink-anode configuration support direct mounting to metal chassis for enhanced thermal dissipation.

It meets ISO 7637-2 surge requirements under defined test conditions and complies with MSL Level 1 (peak reflow 245 °C), making it suitable for automated SMT assembly in automotive-grade production. The device's TJ max of 175 °C and αT = 0.074 %/°C temperature coefficient ensure stable VBR across extended temperature ranges.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 12 V - Maximum continuous reverse operating voltage before significant conduction begins; defines system bus voltage compatibility.
VBR (nom) 14.0 V - Voltage at which device enters avalanche breakdown at 5 mA; ensures predictable turn-on margin above VWM.
VC @ IPPM 19.9 V - Clamped voltage at 332 A peak pulse current (10/1000 μs); determines maximum stress on protected downstream ICs.
PPPM (10/1000 μs) 6600 W - Peak transient energy handling capacity; supports high-energy load dump events per ISO 7637-2.
RθJM 0.35 °C/W - Junction-to-mount thermal resistance; enables accurate thermal modeling when mounted to heatsink or chassis.
TJ max +175 °C - Maximum allowable junction temperature; validates suitability for under-hood automotive environments.
AEC-Q101 Qualified - Certified for automotive reliability including HTGB, HTRB, and temperature cycling; required for ECU and ADAS modules.

Pinout & Package

Package: DO-218AB - molded surface-mount case with matte tin-plated leads, UL 94 V-0 flammability rating, and anode-connected metal heatsink tab for low-inductance, high-current transient path and thermal conduction.

Pin/Terminal Circuit Role Design Meaning
Anode (Heatsink Tab) Main current return path during clamping Electrically and thermally connected to PCB copper pour or chassis; must be soldered for full surge rating and thermal performance.
Cathode (Lead 1) Transient voltage sensing and clamping node Connected to protected line (e.g., battery rail); carries full IPPM during surge event; requires low-inductance layout.

Key Features

Feature Design Value
Junction passivation optimized design Enables stable leakage <10 μA at VWM and 175 °C, critical for low-power always-on automotive modules.
DO-218AB package with metal heatsink Provides RθJM = 0.35 °C/W and supports 700 A IFSM surge, enabling compact placement near high-energy sources like alternators.
AEC-Q101 qualification Validates reliability for automotive applications including engine control, lighting, and infotainment without derating.
ISO 7637-2 compliance (load dump) Guarantees operation under 12 V system load dump pulses up to 35 V/10 ms, per automotive OEM requirements.
MSL Level 1 rating Allows standard SMT reflow profile (peak 245 °C) without moisture sensitivity concerns or baking preconditioning.

Applications

Engine Control Unit (ECU) Power Input Protection Automotive Lighting Module Surge Suppression

Use Scenario: Protects microcontroller and CAN transceiver power rails from alternator load dump transients during battery disconnect.

IC Role / Device Role / Timing Role: Unidirectional TVS clamps 35 V/10 ms load dump spikes to ≤19.9 V within nanoseconds, preserving downstream logic supply integrity.

Use Value: Prevents reset or latch-up of 5 V/3.3 V regulators by limiting transient overshoot below their absolute maximum ratings.

Use Scenario: Shields LED driver ICs and current-sense amplifiers from switching transients generated by high-side MOSFETs in headlamp modules.

IC Role / Device Role / Timing Role: Fast-response TVS absorbs 6600 W surges with <1 ns response time, maintaining stable bias for analog feedback loops.

Use Value: Eliminates need for oversized input capacitors and reduces board space by 30% versus discrete RC snubber + Zener solutions.

Body Control Module (BCM) LIN Bus Protection Start-Stop System Battery Monitoring Circuit

Use Scenario: Guards LIN transceiver pins against ESD and inductive kickback from solenoid actuators (door locks, trunk latches).

IC Role / Device Role / Timing Role: Low-leakage (<10 μA) unidirectional clamp avoids signal distortion on 19.2 kbps LIN bus while surviving 8 kV contact ESD.

Use Value: Maintains bus signal integrity without adding series resistance or capacitance that would degrade rise/fall times.

Use Scenario: Safeguards precision voltage dividers and ADC inputs monitoring 12 V battery voltage during cranking and regenerative braking events.

IC Role / Device Role / Timing Role: Stable VBR (±5%) and low TC (0.074 %/°C) ensure consistent clamping across -40 °C to +150 °C ambient.

Use Value: Enables single-point calibration over full temperature range, reducing factory test time and BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ12AHE3/A Lower PPPM (400 W), DO-214AC package, RθJM not specified, no AEC-Q101 qualification Suitable for consumer-grade 12 V supplies; insufficient for automotive load dump per ISO 7637-2 Select SMAJ12AHE3/A only for cost-sensitive non-automotive designs where surge energy is <500 W.
SM8S12AHE3/A Same electrical specs but industry-grade (no 'H' suffix); lacks AEC-Q101 qualification and MSL Level 1 reflow rating Acceptable for industrial controls with controlled assembly environment; not approved for automotive production Choose SM8S12AHE3/A if AEC-Q101 is not mandated and reflow profile is tightly controlled.

Compared with SMAJ12AHE3/A and SM8S12AHE3/A, the SM8S12AHM3/I delivers 16.5× higher surge power handling, certified automotive reliability, and validated thermal performance for chassis-mounted deployment-making it the sole option meeting OEM Tier-1 requirements for under-hood 12 V rail protection.

Availability

SM8S12AHM3/I is available at Aetrix Electronics and suitable for automotive engine control units, body electronics modules, and start-stop system battery monitoring circuits requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for SM8S12AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, rectifiers, and protection devices for automotive, industrial, and computing markets.

The SM8SxxA family was engineered specifically for high-energy automotive transients, emphasizing AEC-Q101 qualification, DO-218AB thermal efficiency, and ISO 7637-2 compliance-targeting ECU, BCM, and ADAS power rail protection.

FAQ

What is the clamping voltage of the SM8S12AHM3/I at its rated peak pulse current?

The SM8S12AHM3/I has a maximum clamping voltage (VC) of 19.9 V at its rated peak pulse current of 332 A under the 10/1000 μs waveform. This value is measured per JEDEC standards and ensures protected downstream components remain below their absolute maximum voltage ratings during surge events. The SM8S12AHM3/I maintains this clamping performance across its full operating temperature range.

Is the SM8S12AHM3/I qualified for automotive applications?

Yes, the SM8S12AHM3/I is AEC-Q101 qualified and rated for operation from -55 °C to +175 °C. It meets ISO 7637-2 load dump requirements and is MSL Level 1 compliant-making it suitable for engine control units, body control modules, and other under-hood automotive systems. The 'H' in SM8S12AHM3/I explicitly denotes AEC-Q101 qualification.

What does the 'M3' suffix indicate in SM8S12AHM3/I?

The 'M3' suffix in SM8S12AHM3/I specifies packaging: 13-inch diameter plastic tape and reel, with anode oriented toward the sprocket hole. This format supports high-speed pick-and-place assembly and is standardized across Vishay's DO-218AB product line. The '/I' denotes the preferred package code per Vishay's ordering matrix.

How does the DO-218AB package of the SM8S12AHM3/I improve thermal performance?

The DO-218AB package of the SM8S12AHM3/I integrates a metal heatsink tab directly connected to the anode, achieving a junction-to-mount thermal resistance (RθJM) of 0.35 °C/W. When soldered to a large copper area or chassis, this enables effective heat extraction during repetitive surges-critical for sustaining 6600 W peak power without thermal runaway. Standard DO-214 packages lack this thermal path.

Can the SM8S12AHM3/I replace older SM8S12A variants in existing designs?

Yes, the SM8S12AHM3/I is a direct replacement for SM8S12AHE3/A and SM8S12AHE3/I in terms of electrical specs and footprint, but adds AEC-Q101 qualification and MSL Level 1 reflow capability. No PCB changes are required; however, designers should verify thermal mounting and confirm that the 'H' grade meets their automotive qualification requirements before migration.

SM8S12AHM3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-218AC
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
12V
Voltage - Breakdown (Min):
13.3V
Voltage - Clamping (Max) @ Ipp:
19.9V
Current - Peak Pulse (10/1000µs):
332A
Power - Peak Pulse:
6600W (6.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AC

SM8S12AHM3/I FAQ

1.How can I place an order for SM8S12AHM3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SM8S12AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM8S12AHM3/I reliable?

The price and inventory of SM8S12AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S12AHM3/I is usually 5 days.

3.What payment methods are accepted for SM8S12AHM3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S12AHM3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM8S12AHM3/I?

SM8S12AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM8S12AHM3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM8S12AHM3/I?

For technical support, including SM8S12AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S12AHM3/I requirements.

6.How does Aetrix verify that SM8S12AHM3/I is sourced from the original manufacturer or authorized distributors?

All SM8S12AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S12AHM3/I meets industry standards.

7.What is the process for return or replacement of SM8S12AHM3/I?

All SM8S12AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S12AHM3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM8S12AHM3/I part is unused and in its original packaging.

Return procedure for SM8S12AHM3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM8S12AHM3/I Tags

  • SM8S12AHM3/I
  • SM8S12AHM3/I PDF
  • SM8S12AHM3/I Datasheet
  • SM8S12AHM3/I Specifications
  • SM8S12AHM3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM8S12AHM3/I
  • Buy SM8S12AHM3/I
  • SM8S12AHM3/I Price
  • SM8S12AHM3/I Distributor
  • SM8S12AHM3/I Supplier
  • SM8S12AHM3/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER