Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM8S13A-001HE3/2D

Part No.:
SM8S13A-001HE3/2D
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-218AB
Datasheet:
AetrixSM8S13A-001HE3/2D.pdf
Description:
TVS DIODE 13VWM 21.5VC DO218AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,013

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM8S13A-001HE3/2D from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 14.4 V minimum breakdown voltage (VBR), 13.0 V stand-off voltage (VWM), 21.5 V maximum clamping voltage at 307 A peak pulse current, 6600 W peak pulse power (10/1000 μs), and operates up to TJ = 175 °C - enabling robust protection in engine control units and body electronics.

For engineers reviewing the SM8S13A-001HE3/2D datasheet, SM8S13A-001HE3/2D pinout, SM8S13A-001HE3/2D application, or SM8S13A-001HE3/2D equivalent, key selection criteria include unidirectional polarity, DO-218AB package thermal performance (RθJC = 0.90 °C/W), ISO7637-2 compliance, AEC-Q101 qualification, and low leakage (≤10 μA at VWM).

Technical Context

This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and surge reliability. Its unidirectional configuration and heatsink-anode polarity enable direct integration into high-side clamp circuits with minimal forward voltage drop (VF ≤ 1.8 V at 100 A).

The device delivers 6600 W peak pulse power under 10/1000 μs waveform and sustains 5200 W under 10/10 000 μs waveform - meeting stringent automotive load dump requirements per ISO7637-2 while maintaining clamping integrity up to 175 °C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/max)14.4 V / 15.9 V - ensures reliable triggering above system nominal voltage without false conduction
VWM13.0 V - defines maximum continuous reverse operating voltage before leakage exceeds 10 μA
VC @ IPPM21.5 V - clamps transients to safe levels for downstream 24 V automotive ICs during 307 A surges
PPPM (10/1000 μs)6600 W - enables single-event suppression of severe load dump spikes without failure
TJ max.175 °C - supports placement near hot engine compartments and meets AEC-Q101 automotive qualification
RθJC0.90 °C/W - allows effective heat transfer to PCB copper or external heatsink for sustained power dissipation
IFSM700 A - withstands repetitive 8.3 ms half-sine surge currents common in alternator fault conditions

Pinout & Package

Package: DO-218AB - surface-mount, anode-heatsink configuration with matte tin-plated leads, MSL Level 1, UL 94 V-0 molding compound, and JESD201 Class 2 whisker resistance.

Pin/TerminalCircuit RoleDesign Meaning
Lead 1AnodeConnected to protected line (e.g., battery rail); must be routed to heatsink area for thermal management
Lead 2 / Metal HeatsinkCathodeElectrically connected to ground plane; primary thermal path to PCB copper or external heatsink

Key Features

FeatureDesign Value
Junction passivationOptimized anisotropic rectifier process ensures stable VBR and low leakage over lifetime and temperature
AEC-Q101 qualificationValidated for automotive under-hood applications including engine control, lighting, and ADAS power rails
ISO7637-2 complianceMeets Pulse 5a/b load dump test profiles for 12 V and 24 V systems without derating
Low forward voltageVF ≤ 1.8 V at 100 A enables efficient clamping with minimal conduction loss during surge events
MSL Level 1 ratingAllows standard SMT reflow without moisture sensitivity concerns - no baking required prior to assembly

Applications

Engine Control Unit (ECU) Power ProtectionAutomotive Lighting Driver Protection

Use Scenario: Protects microcontroller power supply and CAN transceivers from alternator load dump transients during ignition cycling.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and ECU input filter capacitor.

Use Value: Clamps 12 V system transients to ≤21.5 V, preventing latch-up or damage to 28 V-rated LDOs and 5 V logic supplies.

Use Scenario: Shields LED driver ICs and MOSFET gate drivers from inductive kickback when headlamp relays switch off.

IC Role / Device Role / Timing Role: High-power TVS mounted directly across relay coil output to absorb energy before it reaches driver stage.

Use Value: Absorbs 6600 W surges with <10 ns response, eliminating need for snubber RC networks and reducing BOM count.

Body Control Module (BCM) Input ProtectionStart-Stop System Battery Monitoring

Use Scenario: Safeguards LIN bus transceivers and sensor interfaces against battery reversal and jump-start induced transients.

IC Role / Device Role / Timing Role: Unidirectional clamp on 12 V input rail upstream of DC-DC converter and communication ICs.

Use Value: Maintains ≤10 μA leakage at 13 V, ensuring ultra-low quiescent current for always-on BCM sleep modes.

Use Scenario: Protects fuel injection controller and battery voltage monitor ICs during repeated cranking and regenerative braking events.

IC Role / Device Role / Timing Role: High-reliability TVS integrated into battery sense path with direct heatsink mounting.

Use Value: Sustains 175 °C junction temperature and 700 A surge current, enabling operation in proximity to starter motor wiring.

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ13A-E3/5ATLower PPPM (400 W), SMA package, RθJC ≈ 45 °C/W, VC = 21.5 V at 18.5 ANot suitable for load dump; limited to ESD and low-energy transients in infotainment or sensor nodesSelect only for cost-sensitive non-automotive applications where surge energy is <5% of SM8S13A-001HE3/2D capability
TPSMD13ASame DO-218AB package, PPPM = 6600 W, but VBR = 14.4–15.9 V and VC = 23.2 V at 284 A - higher clamping voltageAcceptable for general 12 V protection but less margin for 28 V-rated downstream ICsPrefer SM8S13A-001HE3/2D when clamping voltage headroom below 22 V is critical for system reliability

Compared with SMAJ13A-E3/5AT and TPSMD13A, SM8S13A-001HE3/2D delivers superior thermal performance (RθJC = 0.90 °C/W vs. >40 °C/W), full AEC-Q101 qualification, and verified ISO7637-2 compliance - making it the only choice for production automotive load dump protection.

Availability

SM8S13A-001HE3/2D is available at Aetrix Electronics and suitable for automotive engine control units, body electronics modules, and start-stop system designs requiring stable component supply, AEC-Q101 traceability, and long-term lifecycle support.

Supply support for SM8S13A-001HE3/2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, rectifiers, and protection devices for automotive, industrial, and computing markets.

The SM8SxxA family was engineered specifically for automotive-grade transient suppression - emphasizing high-temperature operation, surge robustness, and AEC-Q101 compliance in the DO-218AB package.

FAQ

What is the clamping voltage of SM8S13A-001HE3/2D at its rated peak pulse current?

The SM8S13A-001HE3/2D has a maximum clamping voltage (VC) of 21.5 V when subjected to its peak pulse current (IPPM) of 307 A under a 10/1000 μs waveform. This value is measured at TC = 25 °C and ensures downstream 24 V-rated components remain within safe operating limits during load dump events. The SM8S13A-001HE3/2D maintains this clamping performance across its full operating temperature range.

Is SM8S13A-001HE3/2D qualified for automotive applications?

Yes, SM8S13A-001HE3/2D is AEC-Q101 qualified and explicitly designed for automotive use. It meets ISO7637-2 load dump requirements, operates up to 175 °C junction temperature, and is manufactured in a TS16949-certified facility. The HE3 suffix confirms RoHS compliance and JESD201 Class 2 whisker resistance - all documented in Vishay's official qualification report for SM8S13A-001HE3/2D.

What does the "/2D" suffix indicate in SM8S13A-001HE3/2D?

The "/2D" suffix in SM8S13A-001HE3/2D specifies the packaging format: 13-inch diameter plastic tape and reel, with 750 units per reel and anode orientation toward the sprocket hole. This is the standard delivery mode for automated SMT placement. The "2D" code is defined in Vishay's ordering information table and applies exclusively to the SM8S13A-001HE3/2D variant.

Can SM8S13A-001HE3/2D replace SM8S13AHE3/2D?

Yes, SM8S13A-001HE3/2D is functionally identical to SM8S13AHE3/2D. The "-001" prefix denotes Vishay's internal revision or manufacturing lot identifier and does not affect electrical specifications, package dimensions, or qualification status. Both part numbers share identical VBR, VWM, VC, PPPM, and AEC-Q101 certification - confirmed in the same datasheet revision (31-Aug-16, Doc. #88387).

What is the thermal resistance from junction to case for SM8S13A-001HE3/2D?

The SM8S13A-001HE3/2D has a typical thermal resistance from junction to case (RθJC) of 0.90 °C/W, measured under standard test conditions. This low value enables efficient heat transfer from the silicon die to the metal heatsink terminal (Lead 2), supporting sustained power dissipation in high-temperature automotive environments. This parameter is validated per JEDEC standards and published in the Thermal Characteristics section of the SM8S13A-001HE3/2D datasheet.

SM8S13A-001HE3/2D Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-218AB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
13V
Voltage - Breakdown (Min):
14.4V
Voltage - Clamping (Max) @ Ipp:
21.5V
Current - Peak Pulse (10/1000µs):
307A
Power - Peak Pulse:
6600W (6.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AB

SM8S13A-001HE3/2D FAQ

1.How can I place an order for SM8S13A-001HE3/2D through Aetrix?

Please submit a Request for Quotation (RFQ) for SM8S13A-001HE3/2D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM8S13A-001HE3/2D reliable?

The price and inventory of SM8S13A-001HE3/2D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S13A-001HE3/2D is usually 5 days.

3.What payment methods are accepted for SM8S13A-001HE3/2D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S13A-001HE3/2D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM8S13A-001HE3/2D?

SM8S13A-001HE3/2D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM8S13A-001HE3/2D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM8S13A-001HE3/2D?

For technical support, including SM8S13A-001HE3/2D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S13A-001HE3/2D requirements.

6.How does Aetrix verify that SM8S13A-001HE3/2D is sourced from the original manufacturer or authorized distributors?

All SM8S13A-001HE3/2D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S13A-001HE3/2D meets industry standards.

7.What is the process for return or replacement of SM8S13A-001HE3/2D?

All SM8S13A-001HE3/2D units undergo pre-shipment inspection (PSI). If there is an issue with SM8S13A-001HE3/2D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM8S13A-001HE3/2D part is unused and in its original packaging.

Return procedure for SM8S13A-001HE3/2D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM8S13A-001HE3/2D Tags

  • SM8S13A-001HE3/2D
  • SM8S13A-001HE3/2D PDF
  • SM8S13A-001HE3/2D Datasheet
  • SM8S13A-001HE3/2D Specifications
  • SM8S13A-001HE3/2D Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM8S13A-001HE3/2D
  • Buy SM8S13A-001HE3/2D
  • SM8S13A-001HE3/2D Price
  • SM8S13A-001HE3/2D Distributor
  • SM8S13A-001HE3/2D Supplier
  • SM8S13A-001HE3/2D Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER