Vishay General Semiconductor - Diodes Division SM8S13A-001HE3_A/I
- Part No.:
- SM8S13A-001HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S13A-001HE3_A/I.pdf
- Description:
- TVS DIODE 13VWM DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:7,909
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Product details
Overview
SM8S13A-001HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 13.0 V stand-off voltage (VWM), 15.2 V nominal breakdown (VBR), and 6600 W peak pulse power (10/1000 μs). It delivers AEC-Q101 qualification, 175 °C junction temperature capability, and low leakage (<10 μA at VWM), making it suitable for automotive load dump protection in engine control units and body electronics.
For engineers reviewing the SM8S13A-001HE3_A/I datasheet, SM8S13A-001HE3_A/I pinout, SM8S13A-001HE3_A/I application, or SM8S13A-001HE3_A/I equivalent, key selection criteria include its unidirectional polarity, DO-218AB thermal performance (RθJM = 0.35 °C/W), clamping voltage of 21.5 V at 307 A, and compliance with ISO7637-2 surge testing under automotive conditions.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology optimized for high-temperature stability and low forward voltage drop (≤1.8 V at 100 A). Its junction design supports reliable operation up to TJ = 175 °C and meets MSL Level 1 reflow requirements (245 °C peak).
The device operates exclusively in unidirectional mode with heatsink as anode, enabling robust clamping during positive transients. Its 6600 W peak pulse power rating (10/1000 μs) and 5200 W rating (10/10 000 μs) are validated per standardized waveforms, and it exhibits a VBR temperature coefficient of +0.076 %/°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 13.0 V - maximum continuous reverse operating voltage before clamping initiates |
| VBR (nom) | 15.2 V at 5 mA - precise breakdown threshold ensuring predictable turn-on during overvoltage events |
| VC @ IPPM | 21.5 V at 307 A - clamping voltage limiting downstream circuit stress during 10/1000 μs surges |
| PPPM (10/1000 μs) | 6600 W - peak transient energy absorption capacity critical for automotive load dump immunity |
| TJ max | 175 °C - enables deployment in under-hood environments without derating penalties |
| Leakage @ VWM | <10 μA at 25 °C - minimizes standby power loss in always-on vehicle subsystems |
| RθJM | 0.35 °C/W - low junction-to-mount thermal resistance supporting direct heatsink attachment |
Pinout & Package
Package: DO-218AB - thermally enhanced surface-mount outline with metal heatsink terminal; RoHS-compliant, matte tin-plated leads; meets UL 94 V-0 and JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Current entry point during clamping | Electrically connected to exposed metal base; must be soldered to PCB copper pour or heatsink for thermal management |
| Cathode (Lead 1) | Current exit point during clamping | Standard signal-side connection; routed to protected line (e.g., battery rail or ECU input) |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JEDEC standards |
| Junction passivation | Stable VBR drift <±5% over lifetime under 175 °C bias, reducing field failure risk in harsh environments |
| ISO7637-2 compliance | Passes Pulse 5a (load dump) testing up to 35 V/100 ms, meeting OEM-level surge immunity requirements |
| MSL Level 1 | Supports standard SMT reflow profiles up to 245 °C peak without moisture-induced damage |
| Low VF (≤1.8 V) | Reduces conduction losses during sustained overvoltage events, minimizing thermal stress on adjacent components |
Applications
| Engine Control Unit (ECU) Power Input Protection | Automotive Body Control Module (BCM) Bus Line Protection |
|---|---|
Use Scenario: Protects 12 V supply rail in engine control units against alternator load dump transients up to 35 V/100 ms. IC Role / Device Role / Timing Role: Unidirectional TVS clamps positive surges while remaining high-impedance during normal operation. Use Value: Limits voltage seen by microcontroller and analog front-end ICs to ≤21.5 V, preventing latch-up or permanent damage. |
Use Scenario: Shields LIN/CAN transceiver power inputs in body control modules from battery line disturbances during door lock actuation. IC Role / Device Role / Timing Role: Fast-response transient suppressor absorbing sub-millisecond spikes induced by inductive solenoid switching. Use Value: Maintains signal integrity by clamping transients within 1 ns, avoiding communication errors or reset events. |
| ADAS Camera Power Rail Protection | Start-Stop System Battery Monitoring Circuit Protection |
Use Scenario: Safeguards image sensor and ISP power rails in rear-view or surround-view cameras exposed to ignition noise and load dump. IC Role / Device Role / Timing Role: High-power TVS placed at board edge to shunt surge energy before it reaches sensitive imaging ICs. Use Value: Withstands 6600 W pulses without degradation, preserving camera uptime in safety-critical ADAS functions. |
Use Scenario: Protects voltage monitoring ICs and ADC inputs in start-stop battery management systems during cranking and regeneration events. IC Role / Device Role / Timing Role: Standoff-rated suppressor maintaining <10 μA leakage to avoid measurement offset in precision sensing paths. Use Value: Enables accurate battery state-of-charge estimation by eliminating leakage-induced DC error in 16-bit ADC reference paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S13AHM3_A/I | Same electrical specs but HM3 suffix indicates enhanced material categorization and updated AEC-Q101 test reporting per revision 2025 | Preferred for new designs targeting latest automotive qualification documentation requirements | Select SM8S13AHM3_A/I when full traceability to current AEC-Q101 revision and RoHS/REACH compliance documentation is mandatory |
| SMAJ13A-E3/5AT | Lower PPPM (400 W vs. 6600 W), DO-214AC package, RθJA ≈ 40 °C/W, no AEC-Q101 qualification | Limited to non-automotive, low-energy industrial I/O protection where surge levels are below 100 A | Choose SMAJ13A-E3/5AT only for cost-sensitive consumer or industrial applications with verified sub-100 A transient exposure |
Compared with SM8S13A-001HE3_A/I, SM8S13AHM3_A/I offers identical clamping and thermal performance with updated compliance reporting, while SMAJ13A-E3/5AT provides basic protection at lower cost but lacks automotive qualification and cannot handle load dump energy.
Availability
SM8S13A-001HE3_A/I is available at Aetrix Electronics and suitable for automotive power rail protection, engine control unit hardening, and ADAS camera system surge immunity requiring stable component supply across extended production lifecycles.
Supply support for SM8S13A-001HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM8SxxA family is engineered specifically for high-energy automotive transient suppression, emphasizing thermal robustness, AEC-Q101 compliance, and ISO7637-2 Pulse 5a survivability in under-hood environments.
FAQ
What is the maximum clamping voltage of the SM8S13A-001HE3_A/I at its rated peak pulse current?
The SM8S13A-001HE3_A/I has a maximum clamping voltage (VC) of 21.5 V at its rated peak pulse current of 307 A under a 10/1000 μs waveform. This value is measured per standard test conditions and ensures downstream components experience controlled overvoltage stress during surge events. The SM8S13A-001HE3_A/I maintains this clamping performance across its full operating temperature range.
Is the SM8S13A-001HE3_A/I suitable for new automotive designs despite the "Not For New Designs" note in the datasheet?
The "Not For New Designs" notice applies to the entire SM8S10A–SM8S43A series and directs designers toward the newer SM8SxxAHM3 variants. However, SM8S13A-001HE3_A/I remains fully qualified, in active production, and supported for legacy program continuity and existing design refreshes. The SM8S13A-001HE3_A/I retains full AEC-Q101 qualification and ISO7637-2 compliance.
How does the DO-218AB package of the SM8S13A-001HE3_A/I improve thermal performance compared to DO-214AB?
The DO-218AB package of the SM8S13A-001HE3_A/I features an integrated metal heatsink terminal (anode) that reduces junction-to-mount thermal resistance to 0.35 °C/W-over 5× better than typical DO-214AB packages. This allows the SM8S13A-001HE3_A/I to sustain higher surge energy without thermal runaway, especially critical in confined under-hood layouts where airflow is limited.
Does the SM8S13A-001HE3_A/I meet ISO7637-2 Pulse 5a requirements out of the box?
Yes-the SM8S13A-001HE3_A/I is explicitly characterized to meet ISO7637-2 Pulse 5a (load dump) requirements under defined test conditions, including 35 V/100 ms waveform with appropriate coupling network. Its 6600 W peak pulse power rating and 21.5 V clamping voltage ensure compliance when mounted per recommended PCB layout guidelines. The SM8S13A-001HE3_A/I datasheet confirms this validation.
What is the leakage current specification for the SM8S13A-001HE3_A/I at maximum operating temperature?
At TJ = 175 °C and VWM = 13.0 V, the SM8S13A-001HE3_A/I exhibits a maximum reverse leakage current of 10 μA. This elevated-temperature leakage value is confirmed in the Electrical Characteristics table and ensures minimal parasitic loading on always-on vehicle circuits-even in extreme under-hood thermal environments. The SM8S13A-001HE3_A/I maintains this performance across its full -55 °C to +175 °C operating range.
SM8S13A-001HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 14.4V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 307A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S13A-001HE3_A/I FAQ
1.How can I place an order for SM8S13A-001HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S13A-001HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S13A-001HE3_A/I reliable?
The price and inventory of SM8S13A-001HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S13A-001HE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S13A-001HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S13A-001HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S13A-001HE3_A/I?
SM8S13A-001HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S13A-001HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S13A-001HE3_A/I?
For technical support, including SM8S13A-001HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S13A-001HE3_A/I requirements.
6.How does Aetrix verify that SM8S13A-001HE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S13A-001HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S13A-001HE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S13A-001HE3_A/I?
All SM8S13A-001HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S13A-001HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S13A-001HE3_A/I part is unused and in its original packaging.
Return procedure for SM8S13A-001HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S13A-001HE3_A/I Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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