Vishay General Semiconductor - Diodes Division SM8S13AHE3_A/I
- Part No.:
- SM8S13AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S13AHE3_A/I.pdf
- Description:
- TVS DIODE 13VWM 21.5VC DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:730
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Product details
Overview
SM8S13AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 13 V stand-off voltage (VWM), 15.2 V nominal breakdown voltage (VBR), and 6600 W peak pulse power (10/1000 μs). It delivers automotive-grade protection against load dump transients and inductive switching surges in 12 V battery systems.
For engineers reviewing the SM8S13AHE3_A/I datasheet, SM8S13AHE3_A/I pinout, SM8S13AHE3_A/I application, or SM8S13AHE3_A/I equivalent, key selection criteria include its AEC-Q101 qualification, TJ = 175 °C operation, 21.5 V clamping voltage at 307 A IPPM, low leakage (<10 μA at VWM), and ISO7637-2 compliance for automotive load dump immunity.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to achieve stable high-temperature performance up to 175 °C junction temperature, with thermal resistance RθJM of 0.35 °C/W enabling effective heat transfer to the metal heatsink. Its unidirectional polarity and anode-heatsink configuration support direct mounting on chassis ground planes.
The device meets MSL Level 1 per J-STD-020 (245 °C peak reflow), features matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, and passes JESD 201 Class 2 whisker testing - confirming robustness for automated SMT assembly in automotive production environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 13.0 V - Maximum continuous reverse operating voltage before conduction begins; defines system-level DC bus protection threshold in 12 V automotive networks. |
| VBR (nom) | 15.2 V - Breakdown voltage at 5 mA test current; ensures reliable turn-on during fast transients while avoiding false triggering under normal ripple. |
| VC @ IPPM | 21.5 V - Clamping voltage at 307 A peak pulse current (10/1000 μs); limits downstream IC stress to safe levels during ISO7637-2 load dump events. |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power handling capability; enables single-device protection against severe 12 V battery line surges without cascaded staging. |
| TJ max | 175 °C - Maximum junction temperature rating; supports under-hood deployment in engine control units and body electronics without derating. |
| Leakage @ VWM | <10 μA - Reverse leakage at 13 V stand-off; minimizes quiescent power loss in always-on vehicle modules such as CAN gateways and telematics. |
| IFSM | 700 A - Non-repetitive forward surge current rating (8.3 ms half-sine); withstands high-current inrush during cold-cranking or jump-start conditions. |
Pinout & Package
Package: DO-218AB - molded surface-mount case with integral metal heatsink (anode terminal), UL 94 V-0 rated compound, optimized for high-power transient dissipation and mechanical robustness in automotive PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Current return path and thermal interface | Electrically connected to metal base; must be soldered to large copper pour or chassis ground for effective thermal management and low-inductance surge return path. |
| Cathode (Lead 1) | Transient voltage sensing and clamping node | Connected to protected line (e.g., battery feed); initiates avalanche conduction when reverse voltage exceeds VBR, shunting surge energy to anode/heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronic systems per stress test requirements including HTOL, TC, UHAST, and ESD - ensuring long-term reliability in harsh environments. |
| Junction passivation technology | Stabilizes electrical characteristics over temperature and lifetime, reducing parameter drift and improving consistency across production lots. |
| MSL Level 1 rating | Enables standard reflow soldering without moisture sensitivity concerns - eliminates baking requirements and streamlines high-volume SMT manufacturing. |
| ISO7637-2 compliance | Meets Pulse 5a (load dump) test profiles up to 40 V/100 ms, providing validated protection for 12 V vehicle electrical architectures. |
| Low clamping ratio (VC/VBR) | 1.41 (21.5 V / 15.2 V) - tight voltage margin between breakdown and clamping ensures minimal overvoltage exposure to protected circuitry. |
Applications
| Engine Control Unit (ECU) Power Input Protection | Body Control Module (BCM) Battery Interface |
|---|---|
Use Scenario: Protects microcontroller power rails and sensor interfaces from load dump transients during alternator regulation failure in gasoline/diesel engines. IC Role / Device Role / Timing Role: Primary clamping device on main 12 V input rail; activates within nanoseconds to limit voltage excursion below 22 V. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V LDOs and CAN transceivers by maintaining clamped voltage below their absolute maximum ratings. | Use Scenario: Shields door module logic and LIN bus transceivers from inductive kickback generated by power window motors and mirror actuators. IC Role / Device Role / Timing Role: Unidirectional TVS placed upstream of input filter capacitors; absorbs repetitive 100–500 A pulses with <10 ns response time. Use Value: Eliminates need for secondary TVS stages due to 6600 W single-pulse rating, reducing BOM count and PCB area in space-constrained modules. |
| Advanced Driver Assistance Systems (ADAS) Camera Power Supply | Electric Power Steering (EPS) Motor Driver Protection |
Use Scenario: Safeguards image sensor and ISP power domains in front-facing ADAS cameras exposed to battery line noise and ignition transients. IC Role / Device Role / Timing Role: Standoff-rated protector at 13 V; blocks leakage current below 10 μA to preserve low-power sleep mode integrity. Use Value: Maintains <1 μW standby power penalty while delivering full 175 °C operational capability required for hood-mounted camera housings. | Use Scenario: Guards gate drivers and current sense amplifiers in EPS motor control boards subjected to high di/dt switching and regenerative braking spikes. IC Role / Device Role / Timing Role: High-surge-capability TVS mounted directly at H-bridge power input; clamps 307 A pulses with 21.5 V VC to protect MOSFET gate oxide. Use Value: Enables use of lower-voltage-rated, cost-optimized power semiconductors without sacrificing robustness against motor flyback energy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S13AHM3_A/I | Same electrical specs and DO-218AB package; HM3 suffix indicates halogen-free, RoHS-compliant, and AEC-Q101 qualified variant with identical thermal and surge performance. | No functional difference; intended as direct replacement for HE3 version with updated environmental compliance. | Select SM8S13AHM3_A/I for new designs requiring halogen-free materials or updated regulatory alignment; backward compatible in layout and function. |
| SMAJ13A | Lower PPPM (400 W vs. 6600 W), smaller SMA package (DO-214AC), higher VC (21.5 V same but at only 19.9 A IPPM), not AEC-Q101 qualified. | Limited to low-energy consumer or industrial applications; unsuitable for automotive load dump or high-reliability under-hood use. | Use SMAJ13A only in non-automotive, low-surge environments where space constraints outweigh power handling needs. |
Compared with SM8S13AHE3_A/I, SM8S13AHM3_A/I offers identical protection performance with enhanced environmental compliance, while SMAJ13A provides significantly reduced surge capacity and lacks automotive qualification - making it unsuitable for load dump or AEC-Q101–mandated applications.
Availability
SM8S13AHE3_A/I is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, ADAS camera power supplies, and electric power steering systems requiring stable component supply across extended product lifecycles.
Supply support for SM8S13AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM8S series is designed specifically for high-energy transient suppression in 12 V and 24 V automotive electrical systems, with emphasis on load dump immunity, high-temperature operation, and AEC-Q101 compliance.
FAQ
What is the clamping voltage of SM8S13AHE3_A/I at its rated peak pulse current?
The SM8S13AHE3_A/I has a maximum clamping voltage (VC) of 21.5 V at its peak pulse current (IPPM) of 307 A under the 10/1000 μs waveform condition. This value is measured per JEDEC standards and ensures protected downstream circuitry remains within safe voltage limits during severe transients like ISO7637-2 Pulse 5a load dump events. The SM8S13AHE3_A/I maintains this clamping performance across its full operating temperature range.
Is SM8S13AHE3_A/I qualified for automotive applications?
Yes, SM8S13AHE3_A/I is AEC-Q101 qualified and explicitly designed for automotive use. It meets critical requirements including operation up to 175 °C junction temperature, MSL Level 1 reflow compatibility, JESD 201 Class 2 whisker resistance, and ISO7637-2 load dump compliance. These qualifications make SM8S13AHE3_A/I suitable for under-hood ECUs, BCMs, ADAS modules, and other safety-critical vehicle subsystems.
What does the 'HE3' suffix mean in SM8S13AHE3_A/I?
The 'HE3' suffix in SM8S13AHE3_A/I denotes RoHS-compliant, halogen-free construction with matte tin-plated leads, AEC-Q101 qualification, and compliance with JESD 201 Class 2 whisker testing. The 'H' indicates automotive-grade qualification, 'E3' specifies lead-free and halogen-free materials, and the 'A/I' denotes packaging in 13-inch tape-and-reel with anode orientation toward sprocket holes.
Can SM8S13AHE3_A/I replace SM8S13AHM3_A/I in existing designs?
SM8S13AHE3_A/I and SM8S13AHM3_A/I share identical electrical specifications, DO-218AB package dimensions, thermal performance, and AEC-Q101 qualification. The HM3 variant adds halogen-free compliance, but both are mechanically and electrically interchangeable. No PCB or layout changes are required when substituting SM8S13AHE3_A/I for SM8S13AHM3_A/I, though design documentation should reflect the specific environmental compliance of the chosen variant.
What is the thermal resistance from junction to heatsink for SM8S13AHE3_A/I?
The SM8S13AHE3_A/I has a typical thermal resistance from junction to heatsink (RθJM) of 0.35 °C/W, measured using the Transient Dual Interface Test Method (TDIM) per JEDEC 51-14. This low value reflects the efficient thermal path through the metal heatsink (anode) and enables effective power dissipation during high-energy transients - a key advantage over smaller-package TVS devices with higher RθJM values.
SM8S13AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 14.4V
- Voltage - Clamping (Max) @ Ipp:
- 21.5V
- Current - Peak Pulse (10/1000µs):
- 307A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S13AHE3_A/I FAQ
1.How can I place an order for SM8S13AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S13AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S13AHE3_A/I reliable?
The price and inventory of SM8S13AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S13AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S13AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S13AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S13AHE3_A/I?
SM8S13AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S13AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S13AHE3_A/I?
For technical support, including SM8S13AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S13AHE3_A/I requirements.
6.How does Aetrix verify that SM8S13AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S13AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S13AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S13AHE3_A/I?
All SM8S13AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S13AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S13AHE3_A/I part is unused and in its original packaging.
Return procedure for SM8S13AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S13AHE3_A/I Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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