Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM8S15AHE3_A/I

Part No.:
SM8S15AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-218AB
Datasheet:
AetrixSM8S15AHE3_A/I.pdf
Description:
TVS DIODE 15VWM 24.4VC DO218AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,687

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM8S15AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in DO-218AB package, rated for 15 V stand-off voltage (VWM), 17.6 V nominal breakdown (VBR), 6600 W peak pulse power (10/1000 μs), and AEC-Q101 qualified for automotive load dump protection.

For engineers reviewing the SM8S15AHE3_A/I datasheet, SM8S15AHE3_A/I pinout, SM8S15AHE3_A/I application, or SM8S15AHE3_A/I equivalent, this device delivers high-reliability clamping at TJ = 175 °C, low leakage (<10 μA at VWM), and ISO7637-2 compliance - critical for 12 V automotive power rail surge immunity design.

Technical Context

The SM8S15AHE3_A/I uses passivated anisotropic rectifier technology to achieve stable clamping under repetitive transients, with thermal resistance RθJM = 0.35 °C/W enabling efficient heat transfer to the metal heatsink (anode). Its unidirectional polarity and DO-218AB case support high-surge mounting on engine control units and body electronics PCBs.

It operates across -55 °C to +175 °C junction temperature range, exhibits 0.080 %/°C VBR temperature coefficient, and maintains ≤1.8 V forward voltage at 100 A - ensuring predictable turn-on behavior during fast-rising load dump events without false triggering.

Key Specifications

ParameterValue and Actual Design Meaning
VWM15.0 V - maximum continuous reverse operating voltage before clamping begins
VBR (nom)17.6 V - guaranteed breakdown voltage at 5 mA test current, defining precise clamping threshold
VC @ IPPM24.4 V - maximum clamped voltage at 270 A peak pulse, limiting downstream IC stress
PPPM (10/1000 μs)6600 W - peak transient energy absorption capability per single surge event
TJ max+175 °C - extended junction temperature rating enabling under-hood deployment
ID @ VWM<10 μA - ultra-low reverse leakage preserving battery drain budgets in always-on systems
PolarityUnidirectional - protects against positive-going transients only; anode tied to heatsink

Pinout & Package

Package: DO-218AB - molded surface-mount case with integral metal heatsink (anode terminal), UL 94 V-0 rated, RoHS-compliant, JESD201 Class 2 whisker resistant, MSL Level 1 (245 °C reflow).

Pin/TerminalCircuit RoleDesign Meaning
Anode (Heatsink)Positive DC rail connection / thermal pathMust be soldered to large copper pour for thermal dissipation; electrically active as cathode-side reference
Cathode (Lead 1)Transient return path / clamping nodeConnected to protected line (e.g., battery feed); conducts surge current to anode during overvoltage

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated reliability for automotive electronics including engine control, lighting, and ADAS modules
ISO7637-2 complianceMeets Pulse 5a/b load dump requirements for 12 V vehicle electrical systems
Junction temperature capabilityFull specification guaranteed up to +175 °C - eliminates derating in high-ambient under-hood locations
Low clamping ratio (VC/VBR)1.38 - tight margin between breakdown and clamping ensures minimal overvoltage exposure to protected ICs
Matte tin-plated leadsSolderable per J-STD-002 and JESD22-B102 - supports robust reflow and long-term intermetallic stability

Applications

Engine Control Unit (ECU) Power ProtectionAutomotive Lighting Module

Use Scenario: Protects microcontroller and CAN transceiver power rails from alternator load dump surges during battery disconnect.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery input and DC-DC converter input, clamping transients within 1 ns response time.

Use Value: Limits voltage to ≤24.4 V during 6600 W surge, preventing latch-up or gate oxide damage in downstream 3.3 V/5 V logic.

Use Scenario: Shields LED driver ICs and current-sense amplifiers from switching transients generated by high-current headlamp relays.

IC Role / Device Role / Timing Role: Mounted directly at lamp harness connector entry point, absorbing inductive kickback from solenoid-based dimming circuits.

Use Value: Maintains <10 μA leakage at 15 V, avoiding false fault detection in low-power standby mode of adaptive driving beam systems.

Body Control Module (BCM)Infotainment Power Supply

Use Scenario: Guards LIN bus transceivers and window motor drivers against ESD and load dump coupled through shared chassis ground.

IC Role / Device Role / Timing Role: Anode connected to chassis ground plane; cathode tied to 12 V supply rail feeding multiple subsystems.

Use Value: With RθJM = 0.35 °C/W, enables sustained operation at +125 °C ambient without thermal shutdown in sealed BCM enclosures.

Use Scenario: Safeguards USB-C PD controller and audio codec power inputs from ignition-switching noise and jump-start surges.

IC Role / Device Role / Timing Role: First-line protection ahead of wide-input buck converter, reducing need for oversized input capacitors.

Use Value: 270 A peak pulse current rating handles 10/1000 μs transients exceeding 100 V, meeting OEM infotainment EMC immunity specs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SM8S15AHM3_A/ISame electrical specs and DO-218AB package; HM3 suffix indicates enhanced moisture sensitivity level handling (MSL 1) and updated wafer fab processNo functional difference; intended as direct replacement for new designs where HE3 is obsoleteSelect SM8S15AHM3_A/I for new designs - HE3 is Not For New Designs per Vishay documentation
SMAJ15ALower PPPM (400 W vs. 6600 W), DO-214AC package, no AEC-Q101 qualification, higher VC (24.4 V same but lower surge margin)Suitable only for low-energy consumer-grade transients; not validated for automotive load dump or under-hood temperatureUse SMAJ15A only in cost-sensitive non-automotive applications with <500 W surge exposure

Compared with SM8S15AHE3_A/I, SM8S15AHM3_A/I offers identical protection performance with improved manufacturability and lifecycle support, while SMAJ15A provides basic clamping at significantly reduced surge capacity and automotive qualification - making it unsuitable for load dump-critical systems.

Availability

SM8S15AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECU power protection, lighting module surge immunity, and body control module transient suppression requiring stable component supply and AEC-Q101 traceability.

Supply support for SM8S15AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on high-reliability and automotive-grade components.

The SM8S series is designed specifically for high-energy automotive load dump protection, leveraging PAR® technology to deliver industry-leading 6600 W surge capability in surface-mount form with AEC-Q101 validation.

FAQ

Is SM8S15AHE3_A/I qualified for automotive applications?

Yes, SM8S15AHE3_A/I is AEC-Q101 qualified and meets ISO7637-2 Pulse 5a/b requirements for 12 V automotive load dump protection. It operates reliably from -55 °C to +175 °C junction temperature and is rated for under-hood environments in engine control units and body electronics modules. The SM8S15AHE3_A/I datasheet confirms full qualification testing per AEC-Q101 Rev D.

What is the clamping voltage of SM8S15AHE3_A/I at maximum surge current?

The SM8S15AHE3_A/I has a maximum clamping voltage (VC) of 24.4 V at its rated peak pulse current (IPPM) of 270 A under 10/1000 μs waveform conditions. This value is guaranteed across temperature and ensures protected downstream circuitry remains below safe overvoltage thresholds. The SM8S15AHE3_A/I achieves this with a clamping ratio of 1.38 (VC/VBR), indicating tight voltage control.

Does SM8S15AHE3_A/I have bidirectional polarity?

No, SM8S15AHE3_A/I is unidirectional only. Its polarity is fixed: the metal heatsink serves as the anode, and Lead 1 is the cathode. It protects against positive-going transients on the cathode side relative to the anode/heatsink. Bidirectional variants are not offered in the SM8S15AHE3_A/I family - use SM8S15CAHE3_A/I only if reverse-polarity surge protection is required.

What package type does SM8S15AHE3_A/I use and how is it mounted?

SM8S15AHE3_A/I uses the DO-218AB surface-mount package with integral metal heatsink. The anode is the exposed metal base, which must be soldered to a large copper thermal pad for effective heat dissipation. Lead 1 (cathode) is the signal-side terminal. Mounting follows IPC-7351 footprint guidelines and supports reflow per J-STD-020 MSL Level 1.

Why is SM8S15AHE3_A/I marked as "Not For New Designs"?

Vishay explicitly states "Not For New Designs" for SM8S15AHE3_A/I in Document 88387, recommending SM8S15AHM3_A/I as the alternative. The HE3 version remains available for legacy production and repair, but HM3 offers updated process control, enhanced moisture sensitivity handling, and continued long-term supply assurance. Engineers designing new automotive systems should specify SM8S15AHM3_A/I instead of SM8S15AHE3_A/I.

SM8S15AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-218AB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
15V
Voltage - Breakdown (Min):
16.7V
Voltage - Clamping (Max) @ Ipp:
24.4V
Current - Peak Pulse (10/1000µs):
270A
Power - Peak Pulse:
6600W (6.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AB

SM8S15AHE3_A/I FAQ

1.How can I place an order for SM8S15AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SM8S15AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM8S15AHE3_A/I reliable?

The price and inventory of SM8S15AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S15AHE3_A/I is usually 5 days.

3.What payment methods are accepted for SM8S15AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S15AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM8S15AHE3_A/I?

SM8S15AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM8S15AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM8S15AHE3_A/I?

For technical support, including SM8S15AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S15AHE3_A/I requirements.

6.How does Aetrix verify that SM8S15AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All SM8S15AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S15AHE3_A/I meets industry standards.

7.What is the process for return or replacement of SM8S15AHE3_A/I?

All SM8S15AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S15AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM8S15AHE3_A/I part is unused and in its original packaging.

Return procedure for SM8S15AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM8S15AHE3_A/I Tags

  • SM8S15AHE3_A/I
  • SM8S15AHE3_A/I PDF
  • SM8S15AHE3_A/I Datasheet
  • SM8S15AHE3_A/I Specifications
  • SM8S15AHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM8S15AHE3_A/I
  • Buy SM8S15AHE3_A/I
  • SM8S15AHE3_A/I Price
  • SM8S15AHE3_A/I Distributor
  • SM8S15AHE3_A/I Supplier
  • SM8S15AHE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER