Vishay General Semiconductor - Diodes Division SM8S22A-1HE3_A/I
- Part No.:
- SM8S22A-1HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S22A-1HE3_A/I.pdf
- Description:
- TVS DIODE 22VWM DO218AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SM8S22A-1HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in DO-218AB package, rated for 22 V stand-off voltage (VWM), 25.7 V nominal breakdown (VBR), and 6600 W peak pulse power (10/1000 μs). It delivers 186 A peak pulse current and clamps to 35.5 V at rated surge, with AEC-Q101 qualification and 175 °C junction capability for automotive load dump protection.
For engineers reviewing the SM8S22A-1HE3_A/I datasheet, SM8S22A-1HE3_A/I pinout, SM8S22A-1HE3_A/I application, or SM8S22A-1HE3_A/I equivalent, this page provides verified electrical parameters, thermal performance data, automotive-grade reliability context, and direct alternative part guidance aligned with Vishay's official replacement path.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and low leakage (<10 μA at VWM, 25 °C). Its DO-218AB package features a metal heatsink anode configuration and achieves RθJM = 0.35 °C/W, enabling robust thermal management under repetitive surge stress.
The device meets ISO 7637-2 load dump requirements and supports 10/1000 μs and 10/10,000 μs waveforms with 6600 W and 5200 W peak pulse power respectively. Its 0.086 %/°C VBR temperature coefficient ensures predictable clamping behavior across -55 °C to +175 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 22 V - Maximum continuous reverse operating voltage before significant conduction begins; defines system bus voltage compatibility. |
| VBR (nom) | 25.7 V - Breakdown voltage at 5 mA test current; triggers clamping within ±5 % tolerance to protect downstream circuitry. |
| VC @ IPPM | 35.5 V - Clamping voltage at 186 A peak pulse current; determines maximum voltage seen by protected IC during surge event. |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power handling capacity; enables survival of high-energy automotive transients like load dump. |
| TJ max | +175 °C - Maximum junction temperature rating; supports under-hood automotive placement without derating. |
| Leakage @ VWM | <10 μA at 25 °C - Ultra-low reverse leakage preserves battery life and avoids false triggering in always-on systems. |
| AEC-Q101 | Qualified - Validated for automotive reliability including HTOL, TC, HTRB, and ESD per AEC standard; required for Tier-1 supply chain. |
Pinout & Package
Package: DO-218AB - Surface-mount, anode-heatsink configuration with matte tin-plated leads, RoHS-compliant, MSL Level 1, JESD201 Class 2 whisker resistant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Positive terminal / thermal interface | Electrically connected to metal base; must be soldered to large copper pour for effective heat dissipation and low RθJM. |
| Cathode | Transient current return path | Connected to protected line (e.g., 12 V rail); conducts surge current to ground when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier process reduces leakage drift over time and temperature, ensuring long-term clamping consistency. |
| 175 °C TJ operation | Enables placement near high-heat sources (e.g., engine control units) without thermal derating or external heatsinking. |
| ISO 7637-2 compliance | Validated for automotive load dump (Pulse 5a/b) and inductive switching transients, meeting OEM-level EMC requirements. |
| Low clamping ratio (VC/VBR) | 1.38 - Tight ratio between clamping and breakdown voltages minimizes overvoltage margin needed for protected ICs. |
| DO-218AB thermal performance | RθJM = 0.35 °C/W - Enables >90 % of rated PPPM to be sustained thermally via PCB copper, unlike smaller SMC packages. |
Applications
| Automotive Load Dump Protection | 12 V Power Rail Surge Suppression |
|---|---|
|
Use Scenario: Protecting engine control unit (ECU) power input against alternator load dump events (ISO 7637-2 Pulse 5). IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and DC/DC converter input to clamp transients above 35.5 V. Use Value: Prevents damage to 40 V-rated buck controllers by limiting voltage excursion to 35.5 V at 186 A, leveraging 6600 W surge capacity. |
Use Scenario: Safeguarding infotainment head unit power supply from ignition-switching transients and relay bounce. IC Role / Device Role / Timing Role: Standoff protector on main 12 V input, activated only during >25.7 V surges to avoid interference with normal operation. Use Value: Maintains <10 μA leakage at 22 V, eliminating standby current penalty while delivering sub-100 ns response to fast-rising spikes. |
| Industrial CAN Bus Power Line Protection | Commercial Vehicle Battery Management Input |
|
Use Scenario: Securing isolated CAN transceiver power rails in heavy-duty vehicle telematics modules exposed to chassis-ground noise. IC Role / Device Role / Timing Role: Primary overvoltage clamp on VCC line feeding isolated DC/DC, coordinated with secondary TVS on signal lines. Use Value: Withstands repeated 10/1000 μs surges up to 6600 W without degradation, supporting 15-year field life in harsh environments. |
Use Scenario: Protecting BMS microcontroller supply during battery disconnect/reconnect events in electric shuttle buses. IC Role / Device Role / Timing Role: High-energy transient limiter on main battery input, mounted directly to heatsink plane for RθJM = 0.35 °C/W. Use Value: Survives 700 A IFSM half-sine surge (8.3 ms), preventing latch-up or catastrophic failure during high-current fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S22AHM3 | Same VWM (22 V), VBR (25.7 V), and DO-218AB package; differs in revision code (HM3 vs HE3) and enhanced material categorization per Vishay doc#99912. | Identical load dump performance and thermal specs; HM3 suffix indicates updated environmental compliance (e.g., halogen-free status). | Select SM8S22AHM3 for new designs requiring latest Vishay material compliance and continuity with HM3-series qualification. |
| SMAJ22A | Lower PPPM (400 W vs 6600 W), smaller SMA package (RθJA = 95 °C/W vs DO-218AB's 55 °C/W), same VWM/VBR but no AEC-Q101 qualification. | Limited to low-energy consumer or industrial applications; unsuitable for automotive load dump or high-reliability under-hood use. | Use SMAJ22A only in cost-sensitive, non-automotive applications where surge energy remains below 400 W and ambient temperature is controlled. |
Compared with SM8S22A-1HE3_A/I, SM8S22AHM3 offers identical electrical and thermal performance with updated environmental compliance, while SMAJ22A provides basic 22 V clamping at one-sixteenth the surge capacity and lacks automotive qualification-making it unsuitable for load dump or high-TJ environments.
Availability
SM8S22A-1HE3_A/I is available at Aetrix Electronics and suitable for automotive ECU protection, 12 V power rail surge suppression, and industrial CAN bus power line hardening requiring stable component supply and long-term lifecycle support.
Supply support for SM8S22A-1HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM8SxxA family is engineered specifically for high-energy automotive transient suppression, with emphasis on AEC-Q101 qualification, 175 °C operation, and ISO 7637-2 compliance in ruggedized DO-218AB packaging.
FAQ
What is the clamping voltage of SM8S22A-1HE3_A/I at its rated peak pulse current?
The SM8S22A-1HE3_A/I has a maximum clamping voltage (VC) of 35.5 V at its rated peak pulse current (IPPM) of 186 A under a 10/1000 μs waveform. This value is measured per JEDEC standards and ensures protected circuits experience no more than 35.5 V during worst-case surge events. The SM8S22A-1HE3_A/I maintains this clamping performance across its full operating temperature range.
Is SM8S22A-1HE3_A/I qualified for automotive applications?
Yes, SM8S22A-1HE3_A/I is AEC-Q101 qualified and explicitly designed for automotive use, including under-hood engine control units and body electronics. It meets ISO 7637-2 load dump requirements and operates reliably from -55 °C to +175 °C. The SM8S22A-1HE3_A/I also complies with J-STD-020 MSL Level 1 and JESD201 Class 2 whisker resistance standards.
What does the "HE3" suffix mean in SM8S22A-1HE3_A/I?
The "HE3" suffix in SM8S22A-1HE3_A/I indicates RoHS-compliant, lead-free termination (matte tin plating), AEC-Q101 qualification (H), and non-halogen-free molding compound (E3). The "A/I" denotes tape-and-reel packaging (I = 750-unit reel, anode toward sprocket hole). This full suffix confirms compliance with automotive environmental and reliability standards.
Can SM8S22A-1HE3_A/I replace SM8S22AHM3 in existing designs?
SM8S22A-1HE3_A/I and SM8S22AHM3 share identical electrical specifications, package (DO-218AB), and thermal performance. The HM3 variant reflects a later revision with updated material categorization per Vishay doc#99912, but both are functionally interchangeable. For legacy designs, SM8S22A-1HE3_A/I remains valid; new designs should prefer SM8S22AHM3 per Vishay's "Not For New Designs" notice for HE3 series.
What is the thermal resistance from junction to mounting (RθJM) for SM8S22A-1HE3_A/I?
The SM8S22A-1HE3_A/I has a typical junction-to-mount thermal resistance (RθJM) of 0.35 °C/W, measured using JEDEC 51-14 TDIM methodology. This low value is enabled by the DO-218AB package's metal heatsink anode, which must be soldered to a large PCB copper area to realize full thermal benefit. The SM8S22A-1HE3_A/I achieves >90 % of its 6600 W PPPM rating when properly mounted.
SM8S22A-1HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 22V
- Voltage - Breakdown (Min):
- 24.4V
- Voltage - Clamping (Max) @ Ipp:
- 35.5V
- Current - Peak Pulse (10/1000µs):
- 186A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S22A-1HE3_A/I FAQ
1.How can I place an order for SM8S22A-1HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S22A-1HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S22A-1HE3_A/I reliable?
The price and inventory of SM8S22A-1HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S22A-1HE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S22A-1HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S22A-1HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S22A-1HE3_A/I?
SM8S22A-1HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S22A-1HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S22A-1HE3_A/I?
For technical support, including SM8S22A-1HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S22A-1HE3_A/I requirements.
6.How does Aetrix verify that SM8S22A-1HE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S22A-1HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S22A-1HE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S22A-1HE3_A/I?
All SM8S22A-1HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S22A-1HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S22A-1HE3_A/I part is unused and in its original packaging.
Return procedure for SM8S22A-1HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S22A-1HE3_A/I Tags

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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