Vishay General Semiconductor - Diodes Division SM8S24AHE3_A/I
- Part No.:
- SM8S24AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S24AHE3_A/I.pdf
- Description:
- TVS DIODE 24VWM 38.9VC DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,153
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Product details
Overview
SM8S24AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 24 V stand-off voltage (VWM), 28.1 V nominal breakdown (VBR), and 6600 W peak pulse power (10/1000 μs). It delivers AEC-Q101 qualification, 175 °C junction temperature capability, and low leakage (<10 μA at VWM), targeting automotive load dump protection.
For engineers reviewing the SM8S24AHE3_A/I datasheet, SM8S24AHE3_A/I pinout, SM8S24AHE3_A/I application, or SM8S24AHE3_A/I equivalent, key selection factors include its unidirectional polarity, DO-218AB thermal performance (RθJM = 0.35 °C/W), ISO7637-2 compliance, and 38.9 V clamping voltage at 170 A IPPM - critical for 12 V automotive power rail hardening.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology to achieve stable high-temperature operation up to TJ = 175 °C and low forward voltage drop (VF ≤ 1.8 V at 100 A). Its DO-218AB case integrates a metal heatsink anode terminal for enhanced thermal conduction and meets MSL Level 1 with 245 °C lead-free reflow compatibility.
The device operates exclusively in unidirectional mode with polarity defined by heatsink-as-anode configuration. It satisfies ISO7637-2 surge immunity requirements under specified test conditions and exhibits a positive temperature coefficient of VBR (αT = 0.087 %/°C), enabling predictable voltage shift across temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 24 V - maximum continuous reverse operating voltage before clamping begins; defines safe operating margin for 12 V automotive systems. |
| VBR (nom) | 28.1 V - measured at 5 mA IT; ensures reliable triggering above normal transients but below system overvoltage thresholds. |
| VC @ IPPM | 38.9 V - clamping voltage at 170 A (10/1000 μs); limits downstream IC stress during load dump events. |
| PPPM (10/1000 μs) | 6600 W - peak surge handling capacity; supports harsh automotive ISO7637-2 Pulse 5a/b waveforms. |
| TJ max | +175 °C - enables placement near hot engine-control units without derating; validated per AEC-Q101 stress testing. |
| ID @ VWM | <10 μA - ultra-low leakage preserves battery life in always-on vehicle modules. |
| RθJM | 0.35 °C/W - low junction-to-mount thermal resistance; allows direct PCB copper pour heatsinking for sustained power dissipation. |
Pinout & Package
Package: DO-218AB - surface-mount, anode-heatsink configuration with matte tin-plated leads, UL 94 V-0 molding compound, and JESD201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | High-current return path and thermal interface | Must be soldered to large copper area for RθJM = 0.35 °C/W; electrically connects to system ground or chassis in unidirectional protection. |
| Cathode (Lead 1) | Transient current input node | Connected to protected line (e.g., battery feed); conducts surge current toward anode/heatsink during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood environments including temperature cycling, humidity, and mechanical shock per JEDEC standards. |
| Junction passivation | Stable VBR drift <±5% over lifetime; prevents parameter shift due to moisture ingress or bias stress. |
| MSL Level 1 rating | Enables single-pass 245 °C lead-free reflow without popcorn failure or delamination. |
| ISO7637-2 compliance | Meets Pulse 5a (load dump) and Pulse 5b (superimposed ripple) test profiles when mounted per recommended footprint. |
| Low VF (≤1.8 V @ 100 A) | Minimizes forward conduction loss during bidirectional fault conditions or reverse-biased leakage paths. |
Applications
| Engine Control Unit (ECU) Power Input Protection | Body Control Module (BCM) Battery Line Protection |
|---|---|
Use Scenario: Protects microcontroller power rails from 12 V battery line transients during alternator load dump and inductive switching. IC Role / Device Role: Unidirectional TVS clamping element placed between battery feed and DC/DC input filter. Use Value: Clamps to 38.9 V at 170 A, limiting voltage seen by downstream regulators to within absolute maximum ratings while surviving 6600 W surges. | Use Scenario: Shields LIN bus power supply and CAN transceiver VCC from battery-side spikes in door module or lighting control units. IC Role / Device Role: Primary overvoltage suppression device on fused 12 V input rail prior to local LDOs. Use Value: Delivers <10 μA leakage at 24 V to preserve sleep-mode current budget and maintains stable clamping across -40 °C to +175 °C ambient. |
| Advanced Driver Assistance Systems (ADAS) Camera Power Rail | Electric Power Steering (EPS) Motor Driver Supply Protection |
Use Scenario: Safeguards image sensor and ISP power domains against ignition noise and alternator ripple coupling into camera harnesses. IC Role / Device Role: Final-stage transient suppressor on 5 V or 3.3 V regulated output feeding CMOS image sensors. Use Value: Leverages 0.35 °C/W RθJM to sustain repeated 10/1000 μs surges without thermal runaway, even in sealed camera housings. | Use Scenario: Guards gate driver ICs and current-sense amplifiers from motor back-EMF spikes and battery reversal transients. IC Role / Device Role: High-energy TVS on H-bridge high-side supply rail, referenced to chassis ground via heatsink. Use Value: Withstands 700 A IFSM non-repetitive surge and maintains clamping stability under 175 °C junction temperature during EPS thermal soak tests. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S24AHM3_A/I | Same electrical specs and DO-218AB package; HM3 suffix indicates updated internal construction with improved surge lifetime. | Identical use cases; preferred for new designs due to enhanced reliability under repetitive surge stress. | Select SM8S24AHM3_A/I for production programs requiring long-term availability and higher cycle endurance. |
| SMAJ24A | Lower PPPM (400 W vs. 6600 W), SMA package (RθJA ≈ 65 °C/W), no AEC-Q101 qualification. | Limited to low-energy consumer or industrial applications; unsuitable for automotive load dump. | Only consider SMAJ24A where surge energy is <10% of ISO7637-2 Pulse 5 and AEC-Q101 is not required. |
Compared with SM8S24AHE3_A/I, SM8S24AHM3_A/I offers identical clamping and thermal performance with improved surge cycle life, while SMAJ24A provides basic protection at lower cost but lacks automotive-grade robustness, thermal capability, and surge margin.
Availability
SM8S24AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECU power protection, body electronics battery line hardening, and ADAS camera power rail stabilization requiring stable component supply across extended temperature and high-reliability environments.
Supply support for SM8S24AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SM8S series was developed specifically for high-energy automotive transient suppression, combining AEC-Q101 qualification, DO-218AB thermal efficiency, and ISO7637-2 compliance to replace legacy axial-leaded TVS solutions in space-constrained ECUs.
FAQ
What is the clamping voltage of SM8S24AHE3_A/I at its rated peak pulse current?
The SM8S24AHE3_A/I has a maximum clamping voltage (VC) of 38.9 V when subjected to its rated peak pulse current (IPPM) of 170 A under the standard 10/1000 μs waveform. This value is guaranteed per the Vishay datasheet and defines the upper voltage limit imposed on protected circuitry during surge events, ensuring downstream components remain within safe operating ranges.
Is SM8S24AHE3_A/I suitable for new automotive designs?
No - SM8S24AHE3_A/I is marked "Not For New Designs" in the Vishay datasheet, with SM8S24AHM3_A/I designated as the recommended alternative. While SM8S24AHE3_A/I remains available for legacy program support and repair, new designs should specify SM8S24AHM3_A/I to ensure long-term supply, updated reliability validation, and alignment with current Vishay automotive qualification standards.
What does the "HE3_A/I" suffix mean in SM8S24AHE3_A/I?
The "HE3" suffix denotes RoHS-compliant, halogen-free construction with Pb-free terminations and JESD201 Class 2 whisker resistance; "A" indicates ±5% VBR tolerance and unidirectional polarity; "I" specifies the preferred packaging code - 13-inch plastic tape and reel with anode oriented toward sprocket holes, base quantity 750 units per reel.
Does SM8S24AHE3_A/I require a heatsink pad on the PCB?
Yes - the DO-218AB package uses the metal heatsink (anode) as the primary thermal path. To achieve the specified RθJM of 0.35 °C/W and sustain 8 W continuous power dissipation, SM8S24AHE3_A/I must be mounted on a minimum 100 mm² copper pour connected to internal ground planes. Omitting this pad causes excessive junction temperature rise and premature failure under repeated surge conditions.
How does SM8S24AHE3_A/I perform at elevated junction temperatures?
SM8S24AHE3_A/I is characterized for operation up to TJ = +175 °C and exhibits a VBR temperature coefficient of +0.087 %/°C. At 175 °C, its nominal breakdown voltage increases to approximately 29.9 V (28.1 V × [1 + 0.00087 × 150]), maintaining functional clamping margin while preserving low leakage (<15 μA at VWM) - critical for under-hood ECU reliability.
SM8S24AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 24V
- Voltage - Breakdown (Min):
- 26.7V
- Voltage - Clamping (Max) @ Ipp:
- 38.9V
- Current - Peak Pulse (10/1000µs):
- 170A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S24AHE3_A/I FAQ
1.How can I place an order for SM8S24AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S24AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S24AHE3_A/I reliable?
The price and inventory of SM8S24AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S24AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S24AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S24AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S24AHE3_A/I?
SM8S24AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S24AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S24AHE3_A/I?
For technical support, including SM8S24AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S24AHE3_A/I requirements.
6.How does Aetrix verify that SM8S24AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S24AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S24AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S24AHE3_A/I?
All SM8S24AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S24AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S24AHE3_A/I part is unused and in its original packaging.
Return procedure for SM8S24AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S24AHE3_A/I Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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