Vishay General Semiconductor - Diodes Division SM8S24AHE3_A/K
- Part No.:
- SM8S24AHE3_A/K
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S24AHE3_A/K.pdf
- Description:
- TVS DIODE 24VWM DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:9,696
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM8S24AHE3_A/K from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 24 V stand-off voltage (VWM), 28.1 V nominal breakdown voltage (VBR), 38.9 V clamping voltage at 170 A peak pulse current, and 6600 W peak pulse power (10/1000 μs). Its DO-218AB package supports AEC-Q101 qualification and 175 °C junction operation.
For engineers reviewing the SM8S24AHE3_A/K datasheet, SM8S24AHE3_A/K pinout, SM8S24AHE3_A/K application, or SM8S24AHE3_A/K equivalent, key selection criteria include unidirectional polarity, ISO7637-2 compliance for load dump transients, low leakage (<10 μA at VWM), and thermal resistance of 0.35 °C/W junction-to-mount - critical for high-reliability under-hood electronics.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology to achieve stable clamping performance across -55 °C to +175 °C operating range. Its DO-218AB case integrates a metal heatsink anode terminal, enabling direct thermal coupling to PCB copper or external heatsinks.
The device delivers 6600 W peak pulse power under 10/1000 μs waveform and sustains 5200 W under longer 10/10,000 μs surge, meeting stringent automotive load dump requirements. Its 0.087 %/°C temperature coefficient of VBR ensures predictable voltage threshold shift with junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 24 V - maximum continuous reverse operating voltage before clamping begins; defines system bus tolerance margin. |
| VBR (nom) | 28.1 V - breakdown voltage at 5 mA test current; sets precise overvoltage trip point for protection activation. |
| VC @ IPPM | 38.9 V - clamping voltage at 170 A peak pulse current; determines maximum voltage seen by protected IC during surge. |
| PPPM (10/1000 μs) | 6600 W - peak surge power handling capability; enables robust protection against ISO7637-2 Load Dump Pulse 5a. |
| TJ max | +175 °C - maximum junction temperature; supports under-hood placement without derating in automotive environments. |
| RθJM | 0.35 °C/W - junction-to-mount thermal resistance; allows accurate thermal design when mounted to metal-core PCB or heatsink. |
| ID @ VWM | <10 μA - reverse leakage at 24 V; minimizes standby power loss in always-on vehicle modules. |
Pinout & Package
Package: DO-218AB - surface-mount, anode-heatsink configuration with matte tin-plated leads; meets UL 94 V-0, MSL Level 1, and JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Positive terminal / thermal path | Electrically connected to metal base; must be soldered to large copper pour or heatsink for thermal management and electrical return. |
| Cathode | Transient voltage clamp output | Connected to protected line (e.g., battery rail); conducts surge current to anode/heatsink during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JEDEC standards. |
| Junction passivation | Optimized anisotropic rectifier structure ensures stable VBR and low leakage over lifetime and temperature. |
| ISO7637-2 compliant | Withstands Load Dump Pulse 5a (up to 65 V, 400 ms) and other transients defined in automotive EMC standard. |
| Low forward voltage drop | VF ≤ 1.8 V at 100 A (300 μs pulse); reduces conduction losses during high-current clamping events. |
| MSL Level 1 rating | Reflow-compatible up to 245 °C peak; eliminates moisture sensitivity concerns in standard SMT assembly. |
Applications
| Automotive Body Control Module (BCM) | Engine Control Unit (ECU) Power Input Protection |
|---|---|
Use Scenario: Protects BCM microcontroller and CAN transceivers from alternator load dump surges on 12 V supply rail. IC Role / Device Role: Unidirectional TVS clamping transient energy to safe levels before it reaches downstream regulators and logic. Use Value: Prevents latch-up or permanent damage during 65 V/400 ms load dump events while maintaining <10 μA leakage at 24 V system voltage. |
Use Scenario: Shields ECU main power input from battery line transients caused by relay switching and ignition coil back-EMF. IC Role / Device Role: Fast-response voltage clamp absorbing up to 6600 W surge energy within 10/1000 μs waveform. Use Value: Enables reliable operation at TJ = 175 °C ambient, supporting placement near engine compartment heat sources. |
| ADAS Camera Power Rail Protection | Electric Power Steering (EPS) Motor Driver Supply |
Use Scenario: Guards image sensor and serializer ICs on camera module 12 V input against ISO7637-2 Pulse 5a and Pulse 1. IC Role / Device Role: Standoff-rated TVS suppressing transients while preserving signal integrity on low-noise analog power rails. Use Value: 38.9 V clamping voltage ensures protected ICs see no more than 39 V during worst-case surge, staying below absolute maximum ratings. |
Use Scenario: Protects H-bridge gate drivers and MCU from inductive kickback during EPS motor commutation. IC Role / Device Role: High-surge-capability TVS shunting >170 A transient current directly to chassis ground via heatsink anode. Use Value: 0.35 °C/W RθJM enables effective thermal dissipation into metal housing, preventing thermal runaway during repeated surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S24AHM3_A/K | Same electrical specs and DO-218AB package; HM3 suffix indicates updated material formulation and enhanced whisker resistance (JESD 201 Class 2). | No functional change; intended as direct replacement for new designs where long-term whisker mitigation is prioritized. | Select SM8S24AHM3_A/K for new designs requiring latest qualification revision and improved metallurgical stability. |
| SMAJ24A | Lower PPPM (400 W vs. 6600 W), SMA package (DO-214AC), 24 V VWM, but only 38.9 V VC at 10.3 A - not suitable for load dump. | Limited to low-energy ESD and minor switching transients; cannot handle automotive load dump or ISO7637-2 Pulse 5a. | Use SMAJ24A only in non-automotive, low-power applications where surge energy is below 500 W. |
Compared with SM8S24AHE3_A/K, SM8S24AHM3_A/K offers identical protection performance with enhanced long-term reliability, while SMAJ24A provides only basic ESD-level clamping and lacks the thermal and surge capacity required for automotive power rail protection.
Availability
SM8S24AHE3_A/K is available at Aetrix Electronics and suitable for automotive body control modules, engine control units, ADAS camera systems, and electric power steering designs requiring stable component supply across extended temperature and high-surge environments.
Supply support for SM8S24AHE3_A/K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and MOSFETs for automotive, industrial, and computing applications.
The SM8S series is part of Vishay's high-power PAR® TVS platform, engineered specifically for automotive load dump and ISO7637-2 transient suppression in 12 V and 24 V systems.
FAQ
What is the clamping voltage of the SM8S24AHE3_A/K at its rated peak pulse current?
The SM8S24AHE3_A/K has a maximum clamping voltage (VC) of 38.9 V at 170 A peak pulse current (IPPM) under 10/1000 μs waveform. This value is measured per standard test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The SM8S24AHE3_A/K maintains this clamping performance across its full operating temperature range.
Is the SM8S24AHE3_A/K suitable for 24 V automotive systems?
Yes, the SM8S24AHE3_A/K is explicitly rated for 24 V nominal systems with a 24 V stand-off voltage (VWM) and 28.1 V nominal breakdown voltage (VBR). Its 175 °C junction rating, AEC-Q101 qualification, and ISO7637-2 compliance make it appropriate for commercial and heavy-duty 24 V truck and off-highway vehicle applications. The SM8S24AHE3_A/K is not limited to 12 V use cases.
Does the SM8S24AHE3_A/K have bidirectional polarity?
No, the SM8S24AHE3_A/K is unidirectional only, as confirmed in the Vishay datasheet. It protects against positive transients on the cathode side relative to the anode (heatsink) terminal. Reverse voltage beyond VWM will not trigger clamping - it is not designed to suppress negative-going surges. For bidirectional protection, a separate device or dual-diode configuration is required. The SM8S24AHE3_A/K datasheet explicitly states "Available in unidirectional polarity only."
What does the "HE3" suffix indicate in SM8S24AHE3_A/K?
The "HE3" suffix in SM8S24AHE3_A/K denotes RoHS-compliant, lead-free termination with matte tin plating, AEC-Q101 qualification, and compliance with JESD 201 Class 2 whisker resistance testing. The "E3" portion confirms halogen-free molding compound and Pb-free finish; "H" indicates automotive-grade qualification. The "A/K" denotes revision code and packaging variant. The SM8S24AHE3_A/K meets all specified environmental and reliability requirements for automotive deployment.
Can the SM8S24AHE3_A/K replace older SM8S24A variants in existing designs?
Yes, the SM8S24AHE3_A/K is a direct form-fit-function replacement for prior SM8S24A versions with HE3 suffix compatibility, retaining identical DO-218AB package dimensions, pinout, and electrical specifications. Thermal and surge performance remains unchanged. However, note that Vishay marks this as "Not For New Designs" in favor of the HM3 series; the SM8S24AHE3_A/K remains fully valid for legacy production and repair. Always verify board-level thermal layout matches DO-218AB mounting requirements for the SM8S24AHE3_A/K.
SM8S24AHE3_A/K Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 24V
- Voltage - Breakdown (Min):
- 26.7V
- Voltage - Clamping (Max) @ Ipp:
- 38.9V
- Current - Peak Pulse (10/1000µs):
- 170A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S24AHE3_A/K FAQ
1.How can I place an order for SM8S24AHE3_A/K through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S24AHE3_A/K on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S24AHE3_A/K reliable?
The price and inventory of SM8S24AHE3_A/K are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S24AHE3_A/K is usually 5 days.
3.What payment methods are accepted for SM8S24AHE3_A/K?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S24AHE3_A/K transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S24AHE3_A/K?
SM8S24AHE3_A/K orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S24AHE3_A/K order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S24AHE3_A/K?
For technical support, including SM8S24AHE3_A/K datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S24AHE3_A/K requirements.
6.How does Aetrix verify that SM8S24AHE3_A/K is sourced from the original manufacturer or authorized distributors?
All SM8S24AHE3_A/K products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S24AHE3_A/K meets industry standards.
7.What is the process for return or replacement of SM8S24AHE3_A/K?
All SM8S24AHE3_A/K units undergo pre-shipment inspection (PSI). If there is an issue with SM8S24AHE3_A/K, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S24AHE3_A/K part is unused and in its original packaging.
Return procedure for SM8S24AHE3_A/K:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S24AHE3_A/K Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

